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    3qn04h2

    Abstract: IPB160N04S3-H2 ANPS071E PG-TO263-7-3
    Text: IPB160N04S3-H2 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on 2.1 mΩ ID 160 A Features • N-channel - Enhancement mode PG-TO263-7-3 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant)


    Original     		PDF IPB160N04S3-H2 PG-TO263-7-3 3QN04H2 3qn04h2 IPB160N04S3-H2 ANPS071E PG-TO263-7-3

    3qn04h2

    Abstract: MJ4036 145nC 73 marking PG-TO263-7-3
    Text: Preliminary Data Sheet OptiMOS -T Power-Transistor IPB160N04S3-H2 Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 40 V R DS on 2.4 mΩ ID 160 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPB160N04S3-H2 PG-TO263-7-3 3QN04H2 9600pF 2600pF 465pF 165nC 3qn04h2 MJ4036 145nC 73 marking PG-TO263-7-3

    3qn04h2

    Abstract: GD 898 A44E 165NC
    Text: Preliminary Data Sheet OptiMOS -T Power-Transistor IPB160N04S3-H2 Product Summary V DS 40 V R DS on 2.4 mΩ ID 160 A Features • N-channel - Enhancement mode PG-TO263-7-3 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPB160N04S3-H2 PG-TO263-7-3 3QN04H2 9600pF 2600pF 465pF 165nC 145nC 3qn04h2 GD 898 A44E