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onsemi HGTP3N60A4 IGBT 600V 17A 70W TO220AB
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DigiKey	HGTP3N60A4	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics LLC HGTP3N60A4 IGBT 600V 17A TO220-3
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DigiKey	HGTP3N60A4	Tube			216	1 - 10 - 100 - 1000 $1.39 10000 $1.39	Buy Now
Rochester Electronics LLC HGTD3N60A4S IGBT, 17A, 600V, N-CHANNEL
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DigiKey	HGTD3N60A4S	Bulk			606	1 - 10 - 100 - 1000 $0.5 10000 $0.5	Buy Now
onsemi HGTP3N60A4D IGBT 600V 17A 70W TO220AB
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DigiKey	HGTP3N60A4D	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Avnet Americas	HGTP3N60A4D	Tube			400	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rochester Electronics LLC HGTP3N60A4D N-CHANNEL IGBT
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DigiKey	HGTP3N60A4D	Tube			226	1 - 10 - 100 - 1000 $1.33 10000 $1.33	Buy Now

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3N60A Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
3N60-A-TA3-T		Unisonic Technologies	3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET		Original	PDF

3N60A Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
3N60 Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 3N60A Power MOSFET 3A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60A is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high	Original	PDF	3N60A 3N60A QW-R502-610 3N60
3n60 MOSFEt Abstract: 3N60 TO-22F 3N60L 3N60B f3n60 3N60A PART NO Text: UNISONIC TECHNOLOGIES CO., LTD 3N60 Power MOSFET 3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have	Original	PDF	QW-R502-110 3n60 MOSFEt 3N60 TO-22F 3N60L 3N60B f3n60 3N60A PART NO
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 3N60 Power MOSFET 3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have	Original	PDF	3N60L QW-R502-110
3N60A4D Abstract: 3n60a4 HGT1S3N60A4DS HGT1S3N60A4DS9A HGTP3N60A4D N-Channel mosfet 400v 25A Text: 3N60A4DS, 3N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 3N60A4DS and the 3N60A4D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices	Original	PDF	HGT1S3N60A4DS, HGTP3N60A4D HGT1S3N60A4DS HGTP3N60A4D 150oC. TA49327. TA49369. 3N60A4D 3n60a4 HGT1S3N60A4DS9A N-Channel mosfet 400v 25A
3n60a4 Abstract: 3N60 HGTD3N60A4S HGT1S3N60A4S HGT1S3N60A4S9A HGTP3N60A4 HGTP3N60A4D TB334 Text: 3N60A4S, 3N60A4S, 3N60A4 Data Sheet January 2000 File Number 600V, SMPS Series N-Channel IGBT Features The 3N60A4S, 3N60A4S and the 3N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input	Original	PDF	HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4 HGT1S3N60A4S HGTP3N60A4 150oC. 100kHz 3n60a4 3N60 HGTD3N60A4S HGT1S3N60A4S9A HGTP3N60A4D TB334
3n60 MOSFEt Abstract: 3N60 Text: UNISONIC TECHNOLOGIES CO., LTD 3N60 Power MOSFET 3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have	Original	PDF	O-220 O-220F O-252 QW-R502-110 3n60 MOSFEt 3N60
3n60a4d Abstract: HGT1S3N60A4DS HGT1S3N60A4DS9A HGTP3N60A4D 3n60 Text: 3N60A4DS, 3N60A4D Data Sheet January 2000 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 3N60A4DS and the 3N60A4D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices	Original	PDF	HGT1S3N60A4DS, HGTP3N60A4D HGT1S3N60A4DS HGTP3N60A4D 150oC. TA49327. TA49369. 3n60a4d HGT1S3N60A4DS9A 3n60
3N60 Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 3N60 Power MOSFET 3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have	Original	PDF	O-220 3N60L QW-R502-110 3N60
8N65 Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 產品變更通知 PRODUCT CHANGE NOTIFICATION PCN No. TITLE IC-PPCN-110605 xN60 MOSFET Part Number Change Issue Date Jun-29-2011 Page 1 of 2 變更主旨 TITLE : xN60系列取消檔次及650V產品變更品名 Bin code cancellation for xN60 series and part number change for 650V of xN60 series MOSFET Devices	Original	PDF	IC-PPCN-110605 Jun-29-2011 QR-0205-02 8N65
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 3N60 Power MOSFET 3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have	Original	PDF	3N60L QW-R502-110
65e9 transistor Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 \| \| ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12	Original	PDF	1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
3N60A4 Abstract: HGTD3N60A4S HGTP3N60A4 HGT1S3N60A4S HGT1S3N60A4S9A HGTP3N60A4D TB334 transistor equivalent 3N60A4 Text: 3N60A4S, 3N60A4S, 3N60A4 Data Sheet January 2000 File Number 600V, SMPS Series N-Channel IGBT Features The 3N60A4S, 3N60A4S and the 3N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input	Original	PDF	HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4 HGT1S3N60A4S HGTP3N60A4 150oC. 100kHz 3N60A4 HGTD3N60A4S HGT1S3N60A4S9A HGTP3N60A4D TB334 transistor equivalent 3N60A4
3N60A4 Abstract: HGTD3N60A4S HGT1S3N60A4S HGT1S3N60A4S9A HGTP3N60A4 TB334 Text: 3N60A4S, 3N60A4S, 3N60A4 Data Sheet January 2000 File Number 600V, SMPS Series N-Channel IGBT Features The 3N60A4S, 3N60A4S and the 3N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input	Original	PDF	HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4 HGT1S3N60A4S HGTP3N60A4 150oC. 100kHz 3N60A4 HGTD3N60A4S HGT1S3N60A4S9A TB334
3n60a4d Abstract: HGT1S3N60A4DS HGT1S3N60A4DS9A HGTP3N60A4D 3N60A4 Text: 3N60A4DS, 3N60A4D Data Sheet January 2000 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 3N60A4DS and the 3N60A4D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices	Original	PDF	HGT1S3N60A4DS, HGTP3N60A4D HGT1S3N60A4DS HGTP3N60A4D 150oC. TA49327. TA49369. 3n60a4d HGT1S3N60A4DS9A 3N60A4

3N60A4 Abstract: HGTP3N60A4 HGTD3N60A4S HGTP3N60A4D LD26 TB334 45A-150 Text: 3N60A4S, 3N60A4 Data Sheet August 2003 600V, SMPS Series N-Channel IGBT Features The 3N60A4S and the 3N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the	Original	PDF	HGTD3N60A4S, HGTP3N60A4 HGTD3N60A4S HGTP3N60A4 150oC. 100kHz 200kHz 3N60A4 HGTP3N60A4D LD26 TB334 45A-150
3n60a4 Abstract: BH Ra transistor equivalent 3N60A4 3N60A4 equivalent HGTD3N60A4S A9688 ice 265 vqe 24 e HGT1S3N60A4S HGT1S3N60A4S9A Text: 3N60A4S, 3N60A4S, 3N60A4 in te r r ii J a n u a ry . m D ata S h eet 600V, SMPS Series N-Channel IGBT 4825 Features The 3N60A4S, 3N60A4S and the 3N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and	OCR Scan	PDF	HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4 HGT1S3N60A4S HGTP3N60A4 TA49327. O-263AB O-263AB 330mm 3n60a4 BH Ra transistor equivalent 3N60A4 3N60A4 equivalent HGTD3N60A4S A9688 ice 265 vqe 24 e HGT1S3N60A4S9A
mm036 Abstract: ml075-12 MM036-12 mm036-16 mm075-12io1 mm062 DSI 12-06A MDD95-16N1B ME03 21N100 Text: 17 17 17 17 17 17 17 17 17 17 17 17 17 17 13 15 15 13 13 13 13 14 14 14 14 13 13 13 13 13 15 15 15 13 13 13 13 13 13 14 14 14 14 14 14 13 13 13 15 15 15 14 14 14 DSAI35-12A DSAI 35-16A DSAI 35-18A DSAI 75-12A DSAI 75-16A DSAI 75-18A DSEI 12-06A DSEI 12-1OA	OCR Scan	PDF	DSAI35-12A 5-16A 5-18A 5-12A 2-06A 12-1OA 2-12A 2x30-Q4C mm036 ml075-12 MM036-12 mm036-16 mm075-12io1 mm062 DSI 12-06A MDD95-16N1B ME03 21N100
3N60A4D Abstract: TA49369 HGT1S3N60A4DS HGT1S3N60A4DS9A HGTP3N60A4D 5LEC A9688 Text: 3N60A4DS, 3N60A4D in t e r r i i J a n u a ry . D ata S h eet 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 3N60A4DS and the 3N60A4D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices	OCR Scan	PDF	HGT1S3N60A4DS HGTP3N60A4D TA49327. TA49369. 3N60A4D TA49369 HGT1S3N60A4DS9A 5LEC A9688