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    3N35 Search Results

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    3N35 Price and Stock

    KEMET Corporation R523N356050P0M

    FILM, RADIAL, METALLIZED POLYPRO
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    KEMET Corporation R533N356050P0K

    CAP FILM 0.56UF 10% 630VDC RAD
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    ITT Interconnect Solutions KJL6T13N35PA

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    ITT Interconnect Solutions KJL6T13N35SA

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    ITT Interconnect Solutions KJL3T13N35PB

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    3N35 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    3N35 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    3N35 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    3N35 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    3N35 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    3N35 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    3N35 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    3N35 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    3N3597 Diode Transistor Silicon Transistors Scan PDF
    3N35A Motorola Motorola Semiconductor Datasheet Library Scan PDF
    3N35A Unknown Discontinued Transistor Data Book 1975 Scan PDF
    3N35A Unknown Basic Transistor and Cross Reference Specification Scan PDF

    3N35 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BC125

    Abstract: 2N907 G700M BC232B 2N1410 kt384a LOW-POWER SILICON NPN 2N474 BFY33 3N35
    Text: LOW-POWER SILICON NPN Item Number Part Number 2SC3246K 2SD1627 2SC3053 BFY72 2N2414 2N4968 V BR CEO 10 15 TP5451 40080 MPS3566 MPS3566 2S741 2S741 2S741A PET3704 PET3705 2N471 ~~1~~~ 20 25 - 30 35 D4C28 4C28 2N546 2N1252A 2N1252A 2N907 2N761 BC120 ~g~~g SE8oo1


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    PDF 2SC3246K 2SD1627 2SC3053 BFY72 2N2414 2N4968 TP5451 MPS3566 2S741 BC125 2N907 G700M BC232B 2N1410 kt384a LOW-POWER SILICON NPN 2N474 BFY33 3N35

    2N3501 JANTX

    Abstract: JANKCB2N3501 2N3501 diagram 2n3501ub 366n JANKCC2N3501 2N3498 2N3501 2N3499 2N3499L
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 5 November 2010. MIL-PRF-19500/366N 5 August 2010 SUPERSEDING MIL-PRF-19500/366M 22 October 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, AMPLIFIER,


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    PDF MIL-PRF-19500/366N MIL-PRF-19500/366M 2N3498, 2N3498L, 2N3498U4, 2N3499, 2N3499L, 2N3499U4, 2N3500, 2N3500L, 2N3501 JANTX JANKCB2N3501 2N3501 diagram 2n3501ub 366n JANKCC2N3501 2N3498 2N3501 2N3499 2N3499L

    3N35

    Abstract: tetrode transistor TO 12 dimensions 19S8 ScansUX7
    Text: T Y P E 3N35 N -P-N G R O W N -JU N C T IO N S ILIC O N T E T R O D E T R A N S IS TO R B U L L E T IN N O . D L -S 5 8 9 6 1 , A U G U S T 1 9 5 8 Typical 2 0 d b P o w e r G a in a t 7 0 M C Mgh M i ct M gh T ia p u l w i D e s ig n e d fo r W g h F r i f m c r


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    PDF Vc-20V -100MA Ib2--100MA 7S222 3N35 tetrode transistor TO 12 dimensions 19S8 ScansUX7

    3N35

    Abstract: No abstract text available
    Text: TYPE 3N35 N-P-N GROWN JUNCTION SILICON TETRODE TRANSISTOR B U LL ET IN NO. DL-S 58961, A UG U ST 1958 Typical 20db Power Gain at 70 MC Hgh Cain at High Temperature Designed for High Frequency • IF Amplifiers RF Amplifiers * Video Amplifier! • Ofcillators


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    3N35

    Abstract: tetrode transistor RAW MATERIAL INSPECTION procedure 3N35 JAN
    Text: MIL-S-19500/80E J 7 A p ril 1972 _ SÜ PK K SE D IN U s - 1 QRnn/flnn m ît 1 July 1965 See 6.3 H m T ^T A D V iriiU J k m u x O D P ^ T X 'T r ' A OTTAKT u r u v ju ' i v a i i v n SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPE 3N35 This specification is m andatory for use by all D epartiiiy n w tj


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    PDF MIL-S-19500/80E MIL-S-19500/SOD MIL-S-19500. 3N35 tetrode transistor RAW MATERIAL INSPECTION procedure 3N35 JAN

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    TIL78

    Abstract: photo transistor til78 til78 phototransistor FPT100 phototransistor ft06 MRD100 OS13 phototransistor OCP71
    Text: S Y M B O L S & C O D E S E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE


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    2SC640

    Abstract: 3N27 BC130C
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    TIL78

    Abstract: til78 phototransistor L44A BFX82 K1504 MT101B P1028 phototransistor OCP71 transistor k1502
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


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    TIL78

    Abstract: SA2739 phototransistor OCP71 cm601 JAN2N491 photo transistor til78 til78 phototransistor CM602 FPN100 ft06
    Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C


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    PDF NPN110. fab-100Mc; BVCB0-30V; Pc-125mW BVCB0-30V lc-10mA; fab-150Mc; lc-10mA fab-200Mc; TIL78 SA2739 phototransistor OCP71 cm601 JAN2N491 photo transistor til78 til78 phototransistor CM602 FPN100 ft06

    TIL78

    Abstract: photo transistor til78 K1202 phototransistor OCP71 photo TIL78 til78 phototransistor 2n318 2SK19GR 2SK19Y C682A
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C


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    PDF NPN110. fab-100Mc; BVCB0-30V; Pc-125mW BVCB0-30V lc-10mA; fab-150Mc; lc-10mA fab-200Mc; TIL78 photo transistor til78 K1202 phototransistor OCP71 photo TIL78 til78 phototransistor 2n318 2SK19GR 2SK19Y C682A

    2SC114 transistor

    Abstract: FZJ 131 usaf516es047m PMT222 2SC286 2SC287 2SC430 400M transistor 2SC114 replacement transistor 2SC114
    Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    PDF PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 2SC114 transistor FZJ 131 usaf516es047m PMT222 2SC286 2SC287 2SC430 400M transistor 2SC114 replacement transistor 2SC114

    2n7588

    Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
    Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.


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    2N80

    Abstract: 5P30
    Text: . DIP & SMD DELAY LINES o FlO TAPS •14PIN &IS PIN PACKAGES F DIPS SURFACE MOUNTING*G LEADS PASSIVE SERIES SERIES DIP-14 AND DIP-G14* J4 J3 12 11, 10 i * Surface M ount G Lead Package ,8 IM PEDANCE ± 1 0 % - - 1 2 3 4 5 6 7 _2 8 5 _ _


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    PDF DIP-14 DIP-G14* 2N100 3KI33 3N100 5N100 2N80 5P30

    TIL78

    Abstract: photo transistor til 78 photo transistor til78 sk 110 19 20n 2sc640 transistor 2SC286 2SC287 2SC430 400M PMT222
    Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    PDF fab-100Mc; BVCB0-30V; Pc-125mW BVCB0-30V lc-10mA; fab-150Mc; lc-10mA fab-200Mc; BVCBO-15V; TIL78 photo transistor til 78 photo transistor til78 sk 110 19 20n 2sc640 transistor 2SC286 2SC287 2SC430 400M PMT222

    TIL78

    Abstract: photo transistor til78 TIL78 em
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    TIL78

    Abstract: MRD100 FSP165 BSW11 rt930 2N577 BC198A BFY47 10G1051 D10B1055
    Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    PDF fab-100Mc; BVCB0-30V; Pc-125mW BVCB0-30V lc-10mA; fab-150Mc; lc-10mA fab-200Mc; BVCBO-15V; TIL78 MRD100 FSP165 BSW11 rt930 2N577 BC198A BFY47 10G1051 D10B1055

    2n189

    Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
    Text: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits


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    PDF 2G101* 2G102* 2G103* 2G109 2G220 2G221 2G222 2G223 2G224 2n189 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


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    PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680

    transistor 2N4

    Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
    Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION


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    Tr431

    Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
    Text: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200


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    PDF 25T12 Z1012 Z1014 Z1018 AA138 AA140 AA142 AA200 AA21Q AA300 Tr431 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76

    irf3203

    Abstract: MTM12N20 MTM15N35 DJ05AH mtm5n35 MTM10N25 MTM15 MTM3N35 MTM4N35 MTM5N20
    Text: POWER TRANSISTORS — TMOS METAL continued Metal TMOS Power MOSFETs — TO-204AA (continued) CASE 1-04 and CASE 1-05 rDS(on) @ 'D 'D(Cont) (Amp) Max PO @ Tc = 25°C (Wans) Max V BR(DSS) (Volts) Min (Ohms) Max (Amp) 450 1.5 2 M TM 4N 45 4 75 1.10 4 IRF443


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    PDF O-204AA MTM4N45 IRF443 IRF441 MTM7N45 IRF453 IRF451 MTM15N45 MTM3N40 IRF322 irf3203 MTM12N20 MTM15N35 DJ05AH mtm5n35 MTM10N25 MTM15 MTM3N35 MTM4N35 MTM5N20

    MTM8P20

    Abstract: IRF3203 MTM12N20 DJ05AH MTM15N35 MTM3N35 MTM4N35 mtm5n35 MTM15N40 MTP2P45
    Text: POWER TRANSISTORS — TM OS M ETAL continued Metal TMOS Power M OSFETs — TO-204AA (continued) C A S E 1-04 an d C A S E 1-05 rDS(on) @ 'D 'D(Cont) (Amp) Max PO @ T c = 25°C (Wans) Max V BR(DSS) (Volts) Min (Ohms) Max (Amp) 450 1.5 2 M TM 4N45 4 75 1.10


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    PDF O-204AA MTM4N45 IRF443 IRF441 MTM7N45 IRF453 IRF451 MTM15N45 MTM3N40 IRF322 MTM8P20 IRF3203 MTM12N20 DJ05AH MTM15N35 MTM3N35 MTM4N35 mtm5n35 MTM15N40 MTP2P45

    2N25

    Abstract: 5n50 5n30 SMD 1N60 esc 5p20 5N35 3N25 5P30 5N80 3N45
    Text: E S C ELECTRONICS CORP SOE D • 3037257 OOODMÖLi T57 MECE □IP &SMD DELAY LINES SERIES D IP -14 IO TAPS •14 PIN & 16 PIN PACKAGES □IP Si SURFACE MOUNTINB *Q LEADS PASSIVE SERIES '% H i ¡7 T -H 7 - 13 AND DIP-G14* * Surface Mount G Lead Package IMPEDANCE ± 10%


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    PDF DIP-14 DIP-G14 300atthe\ 100PCEN G1N25. 1N100 2N100 3N100 5N100 2N25 5n50 5n30 SMD 1N60 esc 5p20 5N35 3N25 5P30 5N80 3N45