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    C30817

    Abstract: RCA C30817 LXA 102 103 PTS 400 C3081 QQG0107 921S-4
    Text: E 6 & 6/CANADA/OPTOELEK 10 » yy- r 3D30fc>10 ÜÜ001D5 33^ B K A N A WM flTB ÆM Electro Photodiode C30817 DATA SHEET • mw#loptics Silicon Avalanche Photodiode for General-Purpose Applications ■ High Quantum Efficiency — 85% typical at 900 nm — 18% typical at 1060 nm


    OCR Scan     		PDF 3D30fc 001Q5 C30817 Range--40Â C30817 ED-0030/10/88 RCA C30817 LXA 102 103 PTS 400 C3081 QQG0107 921S-4

    C30916E

    Abstract: rca 036 spot photodetector
    Text: G & G/CANA]>A/OPTOELEK I t C J l 10 ]> I 3030blD 0000135 07b Electro uptics and Devices ICANA Photodiode Developmental Type C30916E - f - V 1-51 Large Area Silicon Avalanche Photodiode for General-Purpose Applications 8 5% typical at 900 nm Fast Tim e Response —


    OCR Scan     		PDF 3030blD C30916E C30916E ULS-S223R1 rca 036 spot photodetector

    Untitled

    Abstract: No abstract text available
    Text: E G & G/CANADA/OPTOELEK I t C / l T> I ID 3030blD 0DDD135 Electro uptics and Devices 07b « C A N A Photodiode Developm ental Type C30916E - f 'HI-51 Large Area Silicon Avalanche Photodiode for General-Purpose Applications High Quantum Efficiency 85% typical at 900 nm


    OCR Scan     		PDF 3030blD 0DDD135 C30916E HI-51 30916E