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    369AD Price and Stock

    Analog Devices Inc DC1369A-D

    BOARD EVAL LTC2258-14
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    DigiKey DC1369A-D Box 1 1
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    Mouser Electronics DC1369A-D
    • 1 $236.44
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    Analog Devices Inc DC1369A-D 31
    • 1 $225.98
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    Richardson RFPD DC1369A-D 1
    • 1 $225.98
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    onsemi PN2369A_D27Z

    TRANS NPN 15V 0.2A TO92-3
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    DigiKey PN2369A_D27Z Reel 2,000
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    onsemi PN2369A_D75Z

    TRANS NPN 15V 0.2A TO92-3
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    DigiKey PN2369A_D75Z Ammo Pack
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    onsemi PN2369A_D74Z

    TRANS NPN 15V 0.2A TO92-3
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    DigiKey PN2369A_D74Z Ammo Pack
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    TT Electronics plc 2N2369ADCSM

    Bipolar Transistors - BJT
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    Mouser Electronics 2N2369ADCSM 79
    • 1 $43.53
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    Find more 369AD price and stock on Findchips.com

    369AD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    369ad

    Abstract: No abstract text available
    Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS 3.5 MM IPAK, STRAIGHT LEAD CASE 369AD−01 ISSUE A DATE 17 FEB 2009 SCALE 1:1 E E3 L2 A1 E2 D2 D L1 L T SEATING PLANE A A1 b1 2X e A2 3X b 0.13 M E2 T D2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.


    Original     		PDF 369AD-01 369AD 369ad

    04NG

    Abstract: 48 04NG 4804NG 369D
    Text: NTD4804NA Advance Information Power MOSFET 25 V, 117 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices


    Original     		PDF NTD4804NA NTD4804NA/D 04NG 48 04NG 4804NG 369D

    mosfet on 09ng

    Abstract: 09NG 369D NTD4909NT4G 369ad 4909ng
    Text: NTD4909N Power MOSFET 30 V, 41 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com V(BR)DSS


    Original     		PDF NTD4909N NTD4909N/D mosfet on 09ng 09NG 369D NTD4909NT4G 369ad 4909ng

    Untitled

    Abstract: No abstract text available
    Text: NDD60N900U1 N-Channel Power MOSFET 600 V, 900 mW Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant V BR DSS RDS(ON) MAX 600 V 900 mW @ 10 V ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)


    Original     		PDF NDD60N900U1 NDD60N900U1/D

    Untitled

    Abstract: No abstract text available
    Text: NTD4806N, NVD4806N Power MOSFET 30 V, 76 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4806N


    Original     		PDF NTD4806N, NVD4806N NTD4806N/D

    4959N

    Abstract: NTD4959N
    Text: NTD4959N Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com V(BR)DSS


    Original     		PDF NTD4959N NTD4959N/D 4959N

    NTD4959N

    Abstract: No abstract text available
    Text: NTD4959NH Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4959NH NTD4959NH/D NTD4959N

    mosfet on 09ng

    Abstract: 09ng 4909ng 4909N 369D NTD4909NT4G
    Text: NTD4909N Power MOSFET 30 V, 41 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com V(BR)DSS


    Original     		PDF NTD4909N NTD4909N/D mosfet on 09ng 09ng 4909ng 4909N 369D NTD4909NT4G

    48 04NG

    Abstract: 04NG 4804NG 4804N NTD4804NT4G DASF0034379 369D NTD4804N NTD4804N-1G
    Text: NTD4804N Power MOSFET 30 V, 117 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com


    Original     		PDF NTD4804N NTD4804N/D 48 04NG 04NG 4804NG 4804N NTD4804NT4G DASF0034379 369D NTD4804N NTD4804N-1G

    48 06ng

    Abstract: 4806NG 06ng 49 06ng mosfet 06ng 48 06ng mosfet 4806n NTD4806N 369ad NTD4806NT4G
    Text: NTD4806N Power MOSFET 30 V, 76 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com


    Original     		PDF NTD4806N NTD4806N/D 48 06ng 4806NG 06ng 49 06ng mosfet 06ng 48 06ng mosfet 4806n NTD4806N 369ad NTD4806NT4G

    Untitled

    Abstract: No abstract text available
    Text: NTD4809NH Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4809NH NTD4809NH/D

    48 04NG

    Abstract: 4804NG 04NG NTD4804NT4G 4804N
    Text: NTD4804N Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4804N NTD4804N/D 48 04NG 4804NG 04NG NTD4804NT4G 4804N

    4806n

    Abstract: 06ng 4806ng 48 06ng 369AA-01
    Text: NTD4806N Power MOSFET 30 V, 76 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com RDS(on) MAX


    Original     		PDF NTD4806N NTD4806N/D 4806n 06ng 4806ng 48 06ng 369AA-01

    N03G

    Abstract: NTD78N03
    Text: NTD78N03 Power MOSFET 25 V, 78 A, Single N−Channel, DPAK Features • Low RDS on • Optimized Gate Charge • Pb−Free Packages are Available http://onsemi.com RDS(on) TYP V(BR)DSS Applications • Desktop VCORE • DC−DC Converters • Low Side Switch


    Original     		PDF NTD78N03 NTD78N03/D N03G NTD78N03

    Untitled

    Abstract: No abstract text available
    Text: NDD60N745U1 Advance Information N-Channel Power MOSFET 600 V, 745 mW http://onsemi.com Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V BR DSS RDS(ON) MAX 600 V 745 mW @ 10 V Compliant ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise


    Original     		PDF NDD60N745U1 NDD60N745U1/D

    4806n

    Abstract: NTD4806NT4G 4806ng 48 06ng 369ad
    Text: NTD4806N, NVD4806N Power MOSFET 30 V, 76 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4806N


    Original     		PDF NTD4806N, NVD4806N AEC-Q101 NTD4806N/D 4806n NTD4806NT4G 4806ng 48 06ng 369ad

    48 09ng

    Abstract: 4809ng mosfet 48 09ng 09ng 4809n mosfet on 09ng NTD4809NA-1G 09ng 040 48 369D
    Text: NTD4809NA Advance Information Power MOSFET 25 V, 58 A, Single N- Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices


    Original     		PDF NTD4809NA NTD4809NA/D 48 09ng 4809ng mosfet 48 09ng 09ng 4809n mosfet on 09ng NTD4809NA-1G 09ng 040 48 369D

    09nhg

    Abstract: NTD4809NHT4G 4809nhg NTD4809NH 369D 48 09NHG
    Text: NTD4809NH Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com


    Original     		PDF NTD4809NH NTD4809NH/D 09nhg NTD4809NHT4G 4809nhg NTD4809NH 369D 48 09NHG

    Untitled

    Abstract: No abstract text available
    Text: NDD60N360U1 N-Channel Power MOSFET 600 V, 360 mW Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant ABSOLUTE MAXIMUM RATINGS TJ = 25°C unless otherwise noted Parameter Symbol


    Original     		PDF NDD60N360U1 NDD60N360U1/D

    Untitled

    Abstract: No abstract text available
    Text: NTD4809N, NVD4809N Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified − NVD4809N These Devices are Pb−Free and are RoHS Compliant


    Original     		PDF NTD4809N, NVD4809N NTD4809N/D

    Untitled

    Abstract: No abstract text available
    Text: NTD4804N, NVD4804N Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified − NVD4804N These Devices are Pb−Free and are RoHS Compliant


    Original     		PDF NTD4804N, NVD4804N NTD4804N/D

    mosfet 48 09ng

    Abstract: 09ng 48 09ng 4809ng 4809N
    Text: NTD4809N Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com


    Original     		PDF NTD4809N NTD4809N/D mosfet 48 09ng 09ng 48 09ng 4809ng 4809N

    06ng

    Abstract: 48 06ng 4806ng mosfet 06ng 4806N 49 06ng on 48 06ng
    Text: NTD4806N Power MOSFET 30 V, 76 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com RDS(on) MAX


    Original     		PDF NTD4806N NTD4806N/D 06ng 48 06ng 4806ng mosfet 06ng 4806N 49 06ng on 48 06ng

    48 09ng

    Abstract: 4809ng 09ng mosfet 48 09ng NTD4809NT4G mosfet on 09ng 4809n 369D NTD4809N
    Text: NTD4809N Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com RDS(on) MAX


    Original     		PDF NTD4809N NTD4809N/D 48 09ng 4809ng 09ng mosfet 48 09ng NTD4809NT4G mosfet on 09ng 4809n 369D NTD4809N