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    34N100 Search Results

    34N100 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    R5F72434N100FP#U0 Renesas Electronics Corporation 32-bit Microcontrollers Visit Renesas Electronics Corporation
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    34N100 Price and Stock

    Cynergy3 Components SSH66XE34N100

    SWITCH HORIZ SS .5A NO/NC
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    DigiKey SSH66XE34N100 Bulk 1 1
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    Newark SSH66XE34N100 Bulk 1
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    Master Electronics SSH66XE34N100 2
    • 1 $191.64
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    Sager SSH66XE34N100 1
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    IXYS Corporation IXFL34N100

    MOSFET N-CH 1000V 30A ISOPLUS264
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    New Advantage Corporation IXFL34N100 191 1
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    IXYS Corporation IXFN34N100

    MOSFET N-CH 1000V 34A SOT-227B
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    Rochester Electronics LLC HGTG34N100E2

    55A, 1000V N-CHANNEL IGBT
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    DigiKey HGTG34N100E2 Bulk 37
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    Cynergy3 Components SSH66TE34N100S

    SHORT FLOAT HORIZ SS .1A EXT MNT
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    DigiKey SSH66TE34N100S Bulk 1
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    Newark SSH66TE34N100S Bulk 1
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    RS SSH66TE34N100S Bulk 8 Weeks 1
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    Sager SSH66TE34N100S 1
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    34N100 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    34N100E2 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    34N100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ixfn36n100

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFL 34N100 VDSS = 1000 V ID25 = 30 A ISOPLUS264TM RDS on = 0.28 Ω (Electrically Isolated Backside) Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary Data Sheet Symbol Test Conditions


    Original     		PDF 34N100 ISOPLUS264TM IXFN36N100 728B1 123B1 065B1

    34N100

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 34N100 VDSS ID25 RDS on = 1000V = 34A Ω = 0.28Ω D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 34N100 OT-227 E153432 728B1 123B1 728B1 065B1 34N100

    36N100

    Abstract: 34n100 ixfn36n100 IXFE34N100 IXFE36N100 NS455
    Text: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.24 Ω 0.28 Ω IXFE 36N100 1000 V 33 A IXFE 34N100 1000 V 30 A trr ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF 36N100 34N100 227TM IXFN36N100 IXFE36N100: IXFE34N100: 728B1 IXFE34N100 IXFE36N100 NS455

    34n100

    Abstract: 125OC 34N-1 3000VV
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 34N100 RDS on G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C, Chip capability


    Original     		PDF 34N100 125OC 728B1 123B1 728B1 065B1 34n100 125OC 34N-1 3000VV

    36N100

    Abstract: IXFE36N100 IXFE34N100
    Text: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.24 Ω 0.28 Ω IXFE 36N100 1000 V 33 A IXFE 34N100 1000 V 30 A trr ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings ISOPLUS 227TM (IXFE) S VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF 36N100 34N100 34N100 IXFN36N100 IXFE36N100: IXFE36N100 IXFE34N100

    36N100

    Abstract: IXFN36N100 IXFE34N100 IXFE36N100 34N100
    Text: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.24 Ω 0.28 Ω IXFE 36N100 1000 V 33 A IXFE 34N100 1000 V 30 A trr ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF 36N100 34N100 227TM IXFN36N100 IXFE36N100: IXFE34N100: 728B1 123B1 728B1 065B1 IXFE34N100 IXFE36N100

    34n100

    Abstract: jm 60 ac
    Text: HiPerFETTM Power MOSFETs IXFL 34N100 VDSS = 1000 V 30 A ID25 = ISOPLUS 264TM ISOPLUS264 RDS on = 0.28 Ω (Electrically Isolated Backside) Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary Data Sheet Symbol Test Conditions


    Original     		PDF 34N100 ISOPLUS264 ISOPLUS264TM ISOPLUS-264TM 728B1 jm 60 ac

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 34N100 VDSS ID25 RDS on = 1000V = 34A = 0.28W D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S Symbol Test Conditions S Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MW


    Original     		PDF 34N100 OT-227 E153432

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 34N100 VDSS ID25 RDS on = 1000V = 34A Ω = 0.28Ω D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S Symbol Test Conditions S Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 34N100 OT-227 E153432 125OC 728B1 123B1 728B1 065B1

    TAB 429 H

    Abstract: 34N100
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 34N100 VDSS ID25 RDS on = 1000V = 34A = 0.28W D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S Symbol Test Conditions S Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MW


    Original     		PDF 34N100 OT-227 E153432 TAB 429 H 34N100

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    34N100E2

    Abstract: TA9895
    Text: 34N100E2 34A, 1000V N-Channel IGBT April 1995 Package Features JE D EC STYLE TO -247 • 34A, 1000V EMITTER • Latch Free Operation • Typical Fall Time •710ns • High Input Impedance • Low Conduction Loss Description The 34N100E2 is a MOS gated high voltage switching


    OCR Scan     		PDF HGTG34N100E2 710ns HGTG34N100E2 34N100E2 TA9895