33L2600
Abstract: No abstract text available
Text: VDSM = 2800 V ITAVM = 3740 A ITRMS = 5880 A ITSM = 60000 A VT0 = 0.95 V rT = 0.100 mΩ Phase Control Thyristor 5STP 33L2800 Doc. No. 5SYA1011-03 Aug.00 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications
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5SYA1011-03
33L2800
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33L2600
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67xVDRM
CH-5600
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Untitled
Abstract: No abstract text available
Text: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 2800 V 3740 A 5880 A 60000 A 0.95 V 0.1 mΩ Ω Phase Control Thyristor 5STP 33L2800 Doc. No. 5SYA1011-03 Jan. 02 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications
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33L2800
5SYA1011-03
33L2600
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33L2600
Abstract: No abstract text available
Text: Key Parameters VDSM = 2800 ITAVM = 3300 ITRMS = 5180 ITSM = 60000 VT0 = 0.95 rT = 0.100 V A A A V mΩ Phase Control Thyristor 5STP 33L2800 Doc. No. 5SYA 1011-02 May, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses
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33L2800
33L2800
33L2600
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67xVDRM
CH-5600
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ABB thyristor 5
Abstract: 33L2800
Text: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 2800 V 3740 A 5880 A 60000 A 0.95 V 0.100 mΩ Ω Phase Control Thyristor 5STP 33L2800 Doc. No. 5SYA1011-03 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications
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Original
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PDF
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33L2800
5SYA1011-03
33L2800
33L2600
33L2200
CH-5600
ABB thyristor 5
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