CMPA0060025F
Abstract: CMPA0060025F-TB CMPA2560002F JESD22
Text: CMPA0060025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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CMPA0060025F
Hz-6000
CMPA0060025F
CMPA00
60025F
CMPA0060025F-TB
CMPA2560002F
JESD22
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Untitled
Abstract: No abstract text available
Text: CMPA0060025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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Original
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PDF
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CMPA0060025F
Hz-6000
CMPA0060025F
CMPA00
60025F
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TBTH06M20
Abstract: CMPA0060025F
Text: CMPA0060025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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Original
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PDF
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CMPA0060025F
Hz-6000
CMPA0060025F
CMPA00
60025F
TBTH06M20
|
CMPA0060025F
Abstract: RF-35-0100-CH CMPA0060025F-TB
Text: CMPA0060025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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Original
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PDF
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CMPA0060025F
Hz-6000
CMPA0060025F
CMPA00
60025F
RF-35-0100-CH
CMPA0060025F-TB
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cree
Abstract: CMPA0060025F Cree Microwave CMPA0060025F-TB CMPA2560002F TBT-H06M20
Text: PRELIMINARY CMPA0060025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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Original
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PDF
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CMPA0060025F
Hz-6000
CMPA0060025F
CMPA00
60025F
cree
Cree Microwave
CMPA0060025F-TB
CMPA2560002F
TBT-H06M20
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