512r
Abstract: 32R512-9CL 32R512 32R512R-9CL 32R512M-8CW 32R512RM-8CW hbx 300 y
Text: ¿ m c o n s m S S I 3 2 R 5 1 2 /5 1 2 R 8 & 9-Channel Thin Film Read/Write Device ta n s A TDK Group/Company October 1992 FEATURES DESCRIPTION The SSI 32R512/512R Read/Write devices are bipolar monolithic integrated circuits designed for use with two terminal thin film recording heads. They provide a
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32R512/512R
32R512R-9CL
32R512R-8CW
32R512-8CW
32R512-9CL
512r
32R512
32R512M-8CW
32R512RM-8CW
hbx 300 y
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32R512
Abstract: No abstract text available
Text: SSI 32R512/512R m m 1 8 & 9-Channel Thin Film Read/Write Device s v s tm A TDK Group/Company October 1992 DESCRIPTION FEATURES The SSI 32R512/512R Read/Write devices are bipolar monolithic integrated circuits designed for use with two terminal thin film recording heads. They provide a
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32R512/512R
32R512/512R
32R512M
32R512RM
32R512
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Untitled
Abstract: No abstract text available
Text: SSI 32R5121/5121R Mmsifskms' 14-Channel Thin Film Read/Write Device A TDK G roup/C om pa ny Advance Information November 1991 FEATURES DESCRIPTION The SSI 32R5121/5121R Read/Write devices are bi polar monolithic integrated circuits designed for use with two terminal thin film recording heads. They pro
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32R5121/5121R
14-Channel
32R5121/5121R
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sol 44
Abstract: H11Y
Text: SI L I C O N SYSTEMS INC hlE D • 8 2 5 3 ^ 5 00Qb477 MSI I I S I L SSI 32R5121/5121R ¿ 14-Channel Thin Film Read/Write Device ilic m á y s b n s A TDK Group/Company Advance Information November 1991 DESCRIPTION FEATURES The SSI 32R5121/5121R Read/Write devices are bi
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00Qb477
32R5121/5121R
14-Channel
32R5121/5121R
sol 44
H11Y
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sol 44
Abstract: H13Y
Text: SSI 32R5121/5121R m m M k n 14-Channel Thin Film Read/Write Device t s Advance Information July, 1990 DESCRIPTION FEATURES The SSI 32R5121/5121R Read/Write devices are bi polar monolithic integrated circuits designed for use with two terminal thin film recording heads. They
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32R5121/5121R
14-Channel
32R5121/5121R
sol 44
H13Y
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Untitled
Abstract: No abstract text available
Text: M W n M k m S S I 3 2 R 5 1 2 /5 1 2 R 8 & 9-Channel Thin Film Read/Write Device s July, 1990 DESCRIPTION FEATURES The SSI 32R512/512R Read/Write devices are bipolar monolithic integrated circuits designed for use with two terminal thin film recording heads. They provide a
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32R512/512R
32R512R-9CL
32R512R-8CW
32R512-8CW
32R512-9CL
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H13Y
Abstract: 5121R H13V
Text: SSI 32R5121/5121R M e m s y s te m 14-Channel Thin Film Read/Write Device s A TDK Group/Company Advance Information November 1991 DESCRIPTION FEATURES The SSI 32R5121/5121R Read/Write devices are bi polar monolithic integrated circuits designed for use with two terminal thin film recording heads. They pro
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32R5121/5121R
14-Channel
32R5121/5121R
H13Y
5121R
H13V
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32R501
Abstract: 32R524R 32R524R-8W 32r524
Text: SSI 32R524R 8-Channel Thin Film Read/Write Device SiiconSuskms 1 July, 1990 DESCRIPTION FEATURES The S S I 32R524R Read/Write device is a bipolar monolithic integrated circuit designed for use with two terminalthinfilm recording heads. It provides a low noise read amplifier, write current control and data
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32R524R
32R524R
32R524RM-8L
32R501
32R524R-8W
32r524
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Untitled
Abstract: No abstract text available
Text: vC^VTCInc YJEc— » VM312H 14-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER _ July, 1993 FE A T U R E S TWO/THREE TERMINAL & SERVO PREAMPLIFIERS • • • • • • • • • High Performance:
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14-CHANNEL,
VM312H
32R5121
600nH,
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32P541B-CL
Abstract: No abstract text available
Text: ¿ihmsystems' S I L I CO N SYS T EM S INC 4bE D • 0253^5 G G D M 33 2 1 ■ SIL SSI 32P541B Read Data P rocessor A TDK Group f Company T-52-3% July 1991 FEATURES DESCRIPTION The SSI 32P541B is a bipolar integrated circuit that provides all data processing necessary for detection
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32P541B
T-52-3%
32P541B
32P541B-P
28-Lead
32P541B-CH
24-Lead
32P541B-CL
32P541B-CL
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HD13X
Abstract: MAX4727 HD10X
Text: VM 312H August, 1995 FEATURES • • • • • • • • • CO N N EC TIO N DIAGRAM S High Performance: - Read Mode Gain = 250 V/V - Low Input Noise = 0.8nV/VFiz Maximum - Input C apacitance = 25 pF Maximum - W rite C urrent Range = 10 mA to 40 mA - Head Inductance Range = 200 nH to 5 ^iH
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14-CHANNEL,
V/12V
32R5121
600nH,
HD13X
MAX4727
HD10X
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Untitled
Abstract: No abstract text available
Text: SILICON SYSTEMS INC OQDbbMb b4T I SIL 0253^5 blE D SSI 32P541B Read Data Processor S i l i c o tn lsó Uu is f a n s A TDK Group/Company 3roup/c T - B Z .-3 *2 2 November 1992 DESCRIPTION FEATURES The SSI 32P541B is a bipolar integrated circuit that provides all data processing necessary for detection
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32P541B
32P541B
28-Lead
32P541B-CH
24-Lead
32P541B-CL
1192-rev.
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VM312
Abstract: DIODE H5y VM312-8PMJ VM3128
Text: V T C In c. V a lu e th e C u s to m e r VM312 10-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER July, 1992 TWO-TERMINAL READ/WRITE PR E A M PS FEATURES • High Performance: - Read mode gain = 150V/V - Low input noise = 0.8nVA/Hz maximum
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VM312
10-CHANNEL,
50V/V
200nH
32R512
34-lead
VM3129PMJ
28-Lead
VM3126SSJ
10-Channel
VM312
DIODE H5y
VM312-8PMJ
VM3128
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Untitled
Abstract: No abstract text available
Text: ♦T* VM 312H W 14-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER Ju ly , 1992 FEATURES DESCRIPTION The VM312H is a high-performance, low-power, high-gain, bipolar monolithic read / write preamplifier designed for use with two-terminal thin-film recording heads. It provides write
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14-CHANNEL,
VM312H
180mW.
100mV,
10MHz
10OmV,
10MHz
600nH,
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Untitled
Abstract: No abstract text available
Text: y y V T C In c. Value the Custom er VM312H 14-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER PRELIMINARY F E A TU R ES CONNECTION DIAGRAMS • High Performance: - Read mode gain = 250V/V CZ] CZ m| CZ H 13X H 13Y HOX HOY H1X nz H1Y n
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VM312H
14-CHANNEL,
50V/V
100mV,
10MHz
600nH,
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WDI21
Abstract: VM VTC 24-lead
Text: ## W * V M 312 »ISclSS:- 950801 FEATU R ES • • • • • • • • • • High Performance: - Read Mode Gain = 150 V/V - Low Input Noise = 0.8nV/VHz Maximum - Input Capacitance = 25 pF Maximum - W rite C urrent Range = 10 mA to 40 mA - Head Inductance Range = 200 nH to 3 nH
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10-CHANNEL,
10-Channel
28-lead
36-lead
44-lead
WDI21
VM VTC 24-lead
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3HS2
Abstract: No abstract text available
Text: SSI 32R524R ¿wmsitskms' 8-Channel Thin Film Read/Write Device A TDK Group/Company 1 November 1991 DESCRIPTION FEATURES The SSI 32R524R Read/Write device is a bipolar monolithic integrated circuit designed for use with two terminal thin film recording heads. It provides a low
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32R524R
32R524R
32R524R-8W
32R524R-8L
32R524RM-8W
32R524RM-8L
32R524RM-8L
3HS2
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Untitled
Abstract: No abstract text available
Text: SSI 32P541B Am systems Read Data Processor A TDK Group/Company 2 November 1992 DESCRIPTION FEATURES The SSI 32P541B is a bipolar integrated circuit that provides all data processing necessary for detection and qualification of MFM or RLL encoded read signals.
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32P541B
32P541B
28-Lead
32P541B-CH
24-Lead
32P541B-CL
192-rev.
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32P541B
Abstract: Signal Path Designer 32P541 32P541B-CL
Text: SSI 32P541B AmmSusfons' Read Data Processor Prelim inary Data June, 1990 DESCRIPTION FEATURES The SSI 32P541B is a bipolar integrated circuit that provides all data processing necessary for detection and qualification of MFM or RLL encoded read signals. *
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32P541B
32P541B
Signal Path Designer
32P541
32P541B-CL
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Untitled
Abstract: No abstract text available
Text: V M W X IS J S S j- 3 1 2 H 14-CHANNEL, h ig h - p e r f o r m a n c e , THIN-FILM HEAD, READ/WRITE PREAMPLIFIER August, 1994 CO N N EC TIO N DIAGRAM S TWO-TERMINAL PREAMPLIFIERS FE A T U R E S • High Performance: - Read Mode Gain = 250 V/V - Low Input Noise = 0.8nV/VHz Maximum
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14-CHANNEL,
32R5121
VM312H
600nH,
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DIODE H5y
Abstract: No abstract text available
Text: w W V M 3 1 2 X J S IS S j. 10-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER August, 1994 FEA TU RES The VM312 is a high-performance, low-power, bipolar mono lithic read / write preamplifier designed for use with two-terminal thin-film recording heads. It provides write current control, data
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10-CHANNEL,
10-Channel
32R512
28-lead
36-lead
44-lead
DIODE H5y
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