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32N170AH1 Price and Stock

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IXYS Corporation IXGR32N170AH1 IGBT 1700V 26A 200W ISOPLUS247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGR32N170AH1	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Littelfuse Inc IXGR32N170AH1 Disc Igbt Pt-Low Frequency Isoplus247/ Tube \|Littelfuse IXGR32N170AH1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXGR32N170AH1	Bulk			300	1 - 10 - 100 - 1000 $19.02 10000 $19.02	Buy Now
IXYS Integrated Circuits Division IXGR32N170AH1 IGBT DIS.DIODE SINGLE 17A 1700V H.VOLT ISOPLUS247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Ozdisan Elektronik	IXGR32N170AH1					1 $31.84213 10 $31.84213 100 $29.759 1000 $29.759 10000 $29.759	Get Quote
IXYS Integrated Circuits Division IXGX32N170AH1 IGBT DIS.DIODE SINGLE 21A 1700V H.VOLTAGE PLUS247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Ozdisan Elektronik	IXGX32N170AH1					1 $35.18149 10 $35.18149 100 $32.8799 1000 $32.8799 10000 $32.8799	Get Quote

32N170AH1 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Advance Technical Information IXGR 32N170AH1 High Voltage IGBT with Diode Electrically Isolated Tab Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient	Original	PDF	32N170AH1 IXGH32N170A 405B2
Untitled Abstract: No abstract text available Text: IXGX 32N170AH1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 32 A	Original	PDF	32N170AH1 PLUS247 0-18A
32N170AH1 Abstract: 32N17 PLUS247 6018A S3670 32n170 Text: IXGX 32N170AH1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 32 A	Original	PDF	32N170AH1 PLUS247 0-18A 32N170AH1 32N17 PLUS247 6018A S3670 32n170
IXGR32N170AH1 Abstract: ISOPLUS247 IXGH32N170A Text: Advance Technical Information IXGR 32N170AH1 High Voltage IGBT with Diode Electrically Isolated Tab Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient	Original	PDF	32N170AH1 IXGH32N170A 405B2 IXGR32N170AH1 ISOPLUS247
Dh60 Abstract: No abstract text available Text: Advance Technical Information IXGX 32N170AH1 High Voltage IGBT with Diode Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 32	Original	PDF	32N170AH1 PLUS247 DH60-18A IXGH32N170A 405B2 Dh60
IXGX32N170AH1 Abstract: rg 710 diode DH60-18A ISOPLUS247 IXGH32N170A Text: Advance Technical Information IXGR 32N170AH1 High Voltage IGBT with Diode Electrically Isolated Tab Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient	Original	PDF	32N170AH1 ISOPLUS247 DH60-18A IXGH32N170A 405B2 IXGX32N170AH1 rg 710 diode ISOPLUS247
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	PDF	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2