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    32N170AH1 Search Results

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    32N170AH1 Price and Stock

    IXYS Corporation IXGR32N170AH1

    IGBT 1700V 26A 200W ISOPLUS247
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    DigiKey IXGR32N170AH1 Tube
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    Littelfuse Inc IXGR32N170AH1

    Disc Igbt Pt-Low Frequency Isoplus247/ Tube |Littelfuse IXGR32N170AH1
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    Newark IXGR32N170AH1 Bulk 300
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    • 1000 $19.02
    • 10000 $19.02
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    IXYS Integrated Circuits Division IXGR32N170AH1

    IGBT DIS.DIODE SINGLE 17A 1700V H.VOLT ISOPLUS247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXGR32N170AH1
    • 1 $31.84213
    • 10 $31.84213
    • 100 $29.759
    • 1000 $29.759
    • 10000 $29.759
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    IXYS Integrated Circuits Division IXGX32N170AH1

    IGBT DIS.DIODE SINGLE 21A 1700V H.VOLTAGE PLUS247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXGX32N170AH1
    • 1 $35.18149
    • 10 $35.18149
    • 100 $32.8799
    • 1000 $32.8799
    • 10000 $32.8799
    Get Quote

    32N170AH1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information IXGR 32N170AH1 High Voltage IGBT with Diode Electrically Isolated Tab Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient


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    PDF 32N170AH1 IXGH32N170A 405B2

    Untitled

    Abstract: No abstract text available
    Text: IXGX 32N170AH1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 32 A


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    PDF 32N170AH1 PLUS247 0-18A

    32N170AH1

    Abstract: 32N17 PLUS247 6018A S3670 32n170
    Text: IXGX 32N170AH1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 32 A


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    PDF 32N170AH1 PLUS247 0-18A 32N170AH1 32N17 PLUS247 6018A S3670 32n170

    IXGR32N170AH1

    Abstract: ISOPLUS247 IXGH32N170A
    Text: Advance Technical Information IXGR 32N170AH1 High Voltage IGBT with Diode Electrically Isolated Tab Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient


    Original
    PDF 32N170AH1 IXGH32N170A 405B2 IXGR32N170AH1 ISOPLUS247

    Dh60

    Abstract: No abstract text available
    Text: Advance Technical Information IXGX 32N170AH1 High Voltage IGBT with Diode Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 32


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    PDF 32N170AH1 PLUS247 DH60-18A IXGH32N170A 405B2 Dh60

    IXGX32N170AH1

    Abstract: rg 710 diode DH60-18A ISOPLUS247 IXGH32N170A
    Text: Advance Technical Information IXGR 32N170AH1 High Voltage IGBT with Diode Electrically Isolated Tab Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient


    Original
    PDF 32N170AH1 ISOPLUS247 DH60-18A IXGH32N170A 405B2 IXGX32N170AH1 rg 710 diode ISOPLUS247

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


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    PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2