32H2BA0070 Search Results

32H2BA0070 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: 30.0-36.0 GHz GaAs MMIC Power Amplifier May 2005 - Rev 05-May-05 32H2BA0070 Features Chip Device Layout tio n Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 16.0 dB Small Signal Gain +33.0 dBm Third Order Intercept OIP3	Original	05-May-05 32H2BA0070 MIL-STD-883	PDF
p1017 Abstract: No abstract text available Text: 30.0-36.0 GHz GaAs MMIC Power Amplifier P1017 September 2005 - Rev 01-Sep-05 Features Chip Device Layout Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 16.0 dB Small Signal Gain +33.0 dBm Third Order Intercept OIP3	Original	01-Sep-05 P1017 MIL-STD-883	PDF
84-1LMI Abstract: P1017 Text: 30.0-36.0 GHz GaAs MMIC Power Amplifier P1017 September 2005 - Rev 01-Sep-05 Features Chip Device Layout Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 16.0 dB Small Signal Gain +33.0 dBm Third Order Intercept OIP3	Original	P1017 01-Sep-05 MIL-STD-883 84-1LMI P1017	PDF
P1017 Abstract: P1017-BD DM6030HK TS3332LD XP1017 XP1017-BD XP1017-BD-000V XP1017-BD-EV1 32H2BA0070 Text: 30.0-36.0 GHz GaAs MMIC Power Amplifier P1017-BD August 2007 - Rev 09-Aug-07 Features Chip Device Layout Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 16.0 dB Small Signal Gain +33.0 dBm Third Order Intercept OIP3	Original	P1017-BD 09-Aug-07 MIL-STD-883 XP1017-BD XP1017-BD-000V XP1017-BD-EV1 XP1017 P1017 P1017-BD DM6030HK TS3332LD XP1017-BD XP1017-BD-000V XP1017-BD-EV1 32H2BA0070	PDF
Untitled Abstract: No abstract text available Text: 30.0-36.0 GHz GaAs MMIC Power Amplifier P1017-BD December 2009 - Rev 01-Dec-09 Features Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 16.0 dB Small Signal Gain +33.0 dBm Third Order Intercept OIP3	Original	P1017-BD 01-Dec-09 MIL-STD-883 P1017-BD-EV1 XP1017-BD	PDF
P1017 Abstract: P1017-BD DM6030HK TS3332LD XP1017 XP1017-BD XP1017-BD-000V XP1017-BD-EV1 ts333 Text: 30.0-36.0 GHz GaAs MMIC Power Amplifier P1017-BD August 2007 - Rev 09-Aug-07 Features Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 16.0 dB Small Signal Gain +33.0 dBm Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing	Original	P1017-BD 09-Aug-07 MIL-STD-883 XP1017-BD XP1017-BD-000V XP1017-BD-EV1 XP1017 P1017 P1017-BD DM6030HK TS3332LD XP1017-BD XP1017-BD-000V XP1017-BD-EV1 ts333	PDF
XP1017-BD Abstract: P1017 P1017-BD DM6030HK XP1017-BD-000V XP1017-BD-EV1 Text: 30.0-36.0 GHz GaAs MMIC Power Amplifier P1017-BD January 2010 - Rev 23-Jan-10 Features Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 16.0 dB Small Signal Gain +33.0 dBm Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing	Original	P1017-BD 23-Jan-10 MIL-STD-883 XP1017-BD BP1017-BD-EV1 XP1017-BD P1017 P1017-BD DM6030HK XP1017-BD-000V XP1017-BD-EV1	PDF