Untitled
Abstract: No abstract text available
Text: 30.0-36.0 GHz GaAs MMIC Power Amplifier May 2005 - Rev 05-May-05 32H2BA0070 Features Chip Device Layout tio n Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 16.0 dB Small Signal Gain +33.0 dBm Third Order Intercept OIP3
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05-May-05
32H2BA0070
MIL-STD-883
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p1017
Abstract: No abstract text available
Text: 30.0-36.0 GHz GaAs MMIC Power Amplifier P1017 September 2005 - Rev 01-Sep-05 Features Chip Device Layout Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 16.0 dB Small Signal Gain +33.0 dBm Third Order Intercept OIP3
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01-Sep-05
P1017
MIL-STD-883
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84-1LMI
Abstract: P1017
Text: 30.0-36.0 GHz GaAs MMIC Power Amplifier P1017 September 2005 - Rev 01-Sep-05 Features Chip Device Layout Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 16.0 dB Small Signal Gain +33.0 dBm Third Order Intercept OIP3
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PDF
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P1017
01-Sep-05
MIL-STD-883
84-1LMI
P1017
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P1017
Abstract: P1017-BD DM6030HK TS3332LD XP1017 XP1017-BD XP1017-BD-000V XP1017-BD-EV1 32H2BA0070
Text: 30.0-36.0 GHz GaAs MMIC Power Amplifier P1017-BD August 2007 - Rev 09-Aug-07 Features Chip Device Layout Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 16.0 dB Small Signal Gain +33.0 dBm Third Order Intercept OIP3
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P1017-BD
09-Aug-07
MIL-STD-883
XP1017-BD
XP1017-BD-000V
XP1017-BD-EV1
XP1017
P1017
P1017-BD
DM6030HK
TS3332LD
XP1017-BD
XP1017-BD-000V
XP1017-BD-EV1
32H2BA0070
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Untitled
Abstract: No abstract text available
Text: 30.0-36.0 GHz GaAs MMIC Power Amplifier P1017-BD December 2009 - Rev 01-Dec-09 Features Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 16.0 dB Small Signal Gain +33.0 dBm Third Order Intercept OIP3
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Original
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PDF
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P1017-BD
01-Dec-09
MIL-STD-883
P1017-BD-EV1
XP1017-BD
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P1017
Abstract: P1017-BD DM6030HK TS3332LD XP1017 XP1017-BD XP1017-BD-000V XP1017-BD-EV1 ts333
Text: 30.0-36.0 GHz GaAs MMIC Power Amplifier P1017-BD August 2007 - Rev 09-Aug-07 Features Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 16.0 dB Small Signal Gain +33.0 dBm Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing
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Original
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PDF
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P1017-BD
09-Aug-07
MIL-STD-883
XP1017-BD
XP1017-BD-000V
XP1017-BD-EV1
XP1017
P1017
P1017-BD
DM6030HK
TS3332LD
XP1017-BD
XP1017-BD-000V
XP1017-BD-EV1
ts333
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XP1017-BD
Abstract: P1017 P1017-BD DM6030HK XP1017-BD-000V XP1017-BD-EV1
Text: 30.0-36.0 GHz GaAs MMIC Power Amplifier P1017-BD January 2010 - Rev 23-Jan-10 Features Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 16.0 dB Small Signal Gain +33.0 dBm Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing
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Original
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PDF
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P1017-BD
23-Jan-10
MIL-STD-883
XP1017-BD
BP1017-BD-EV1
XP1017-BD
P1017
P1017-BD
DM6030HK
XP1017-BD-000V
XP1017-BD-EV1
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