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International Rectifier 31DQ3F
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	31DQ3F		11			1 - 10 - 100 - 1000 - 10000 -	Get Quote

31DQ3 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MS3467 Abstract: a9ce 31DQ3 Text: KM48C514B, KM48V514B CMOS DRAM 5 1 2 K x 8 B i t CM O S Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 524,288 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time	OCR Scan	PDF	KM48C514B, KM48V514B 512Kx8 MS3467 a9ce 31DQ3
Untitled Abstract: No abstract text available Text: KM44C1004C, KM44V1004C CMOS DRAM 1M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION T his is a fa m ily of 1,048,576 x 4 bit E xtended Data O ut CM O S D R A M s. E xtended D ata O ut o ffe rs high speed random acce ss of m em ory cells w ithin the sam e row. Pow er supply volta g e + 5 .0V or +3.3V , access	OCR Scan	PDF	KM44C1004C, KM44V1004C
Untitled Abstract: No abstract text available Text: K M 4 4 C 10 0 4 D J CMOS D R A M ELECTRONICS 1 M x 4 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access	OCR Scan	PDF	16Mx4, 512Kx8) KM44C1004DJ
VCC101 Abstract: No abstract text available Text: KM44C1002C CMOS DRAM 1M x 4 Bit CMOS Dynamic RAM with Static Column Mode DESCRIPTION T his is a fa m ily of 1,048,576 x 4 bit Static Colum n M ode C M O S DRAMs. S tatic C olum n M ode offers high speed random o r sequential access of m em ory cells within the sam e row. A ccess tim e -5, -6, -7 o r -8 and	OCR Scan	PDF	KM44C1002C 002D1Ã VCC101
Untitled Abstract: No abstract text available Text: KM44C1003C CMOS DRAM 1 M x 4 B i t CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode Quad CAS CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -5, -6, -7 or -8 , power	OCR Scan	PDF	KM44C1003C
31DQ3 Abstract: CDA8 Text: KM44V16000B, KM44V16100B CMOS DRAM 16M x 4bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory celts within the same row. Refresh cyde 4K Ref. or 8K Ref , access time (-45, -5 or -6), power consumption(Normal or Low power) are	OCR Scan	PDF	KM44V16000B, KM44V16100B 16Mx4 31DQ3 CDA8
be5e Abstract: 31DQ3 Text: KM44C1004C, KM44V1004C CMOS DRAM 1 M x 4 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION T his is a fa m ily of 1 ,048,576 x 4 bit E xtended Data O ut CM O S D R A M s. E xtended Data O ut o ffe rs high speed random acce ss of m em ory cells w ithin the sam e row. Power supply vo lta g e + 5 .0V or +3.3V , access	OCR Scan	PDF	KM44C1004C, KM44V1004C be5e 31DQ3