30GP60BDF1
Abstract: No abstract text available
Text: 30GP60BDF1 600V POWER MOS 7 IGBT TO-247 A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode
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Original
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PDF
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APT30GP60BDF1
O-247
T0-247
30GP60BDF1
|
30GP60BDF1
Abstract: 30GP
Text: 30GP60BDF1 600V POWER MOS 7 IGBT TO-247 A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode
|
Original
|
PDF
|
APT30GP60BDF1
O-247
T0-247
30GP60BDF1
30GP
|