2x81-0045B
Abstract: 2x81-0045
Text: DSS 2x81-0045B IFAV = 2x80 A VRRM = 45 V VF = 0.64 V Power Schottky Rectifier VRSM VRRM V V 45 45 miniBLOC, SOT-227 B Type DSS 2x81-0045B Symbol Conditions Maximum Ratings IFRMS IFAVM IFAVM TC = 75°C; rectangular, d = 0.5 TC = 75°C; rectangular, d = 0.5; per device
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2x81-0045B
OT-227
DSS2x81-0045B
2x81-0045B
2x81-0045
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2x81-0045B
Abstract: 2x81-0045
Text: DSS 2x81-0035/45B IFAV = 2x80 A VRRM = 35 - 45 V VF = 0.64 V Power Schottky Rectifier Preliminary Data VRSM VRRM V V 35 45 35 45 miniBLOC, SOT-227 B Type DSS 2x81-0035B DSS 2x81-0045B Symbol Test Conditions Maximum Ratings IFRMS IFAVM IFAVM TC = 75°C; rectangular, d = 0.5
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2x81-0035/45B
OT-227
2x81-0035B
2x81-0045B
DSS2x81-0045B
2x81-0045B
2x81-0045
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Untitled
Abstract: No abstract text available
Text: DSS 2x81-0045B IFAV = 2x80 A VRRM = 45 V VF = 0.64 V Power Schottky Rectifier VRSM VRRM V V 45 45 miniBLOC, SOT-227 B Type DSS 2x81-0045B Symbol Conditions Maximum Ratings IFRMS IFAVM IFAVM TC = 75°C; rectangular, d = 0.5 TC = 75°C; rectangular, d = 0.5; per device
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2x81-0045B
OT-227
DSS2x81-0045B
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Untitled
Abstract: No abstract text available
Text: DSS 2x81-0045B Power Schottky Rectifier IFAV = 2x80 A VRRM = 45 V VF = 0.63 V VRSM VRRM SOT-227B, miniBLOC V V 45 45 Type DSS 2x81-0045A Symbol Conditions Maximum Ratings IFRMS IFAVM IFAVM TC = 75°C; rectangular, d = 0.5 TC = 75°C; rectangular, d = 0.5; per device
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2x81-0045B
OT-227B,
2x81-0045A
DSS2x81-0045B
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Untitled
Abstract: No abstract text available
Text: DSS 2x81-0045B IFAV = 2x80 A VRRM = 45 V VF = 0.64 V Power Schottky Rectifier VRSM VRRM V V 45 45 miniBLOC, SOT-227 B Type DSS 2x81-0045B Symbol Conditions Maximum Ratings IFRMS IFAVM IFAVM TC = 75°C; rectangular, d = 0.5 TC = 75°C; rectangular, d = 0.5; per device
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2x81-0045B
OT-227
DSS2x81-0045B
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2x81-0045
Abstract: 2X81 2x81-0045B Vrrm diode rectifier 35 vrrm
Text: DSS 2x81-0035/45B IFAV = 2x80 A VRRM = 35 - 45 V VF = 0.64 V Power Schottky Rectifier Preliminary Data VRSM VRRM V V 35 45 35 45 miniBLOC, SOT-227 B Type DSS 2x81-0035B DSS 2x81-0045B Symbol Test Conditions Maximum Ratings IFRMS IFAVM IFAVM TC = 75°C; rectangular, d = 0.5
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2x81-0035/45B
OT-227
2x81-0035B
2x81-0045B
2x81-0045
2X81
2x81-0045B
Vrrm
diode rectifier 35 vrrm
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9489X
Abstract: SDA9400 BGY 702
Text: DATA SHEET MICRONAS SDA 9489X, SDA 9589X High-end Picture-In-Picture ICs Version B31 Edition March 15, 2004 6251-562-1DS MICRONAS SDA 9489X, SDA 9589X DATA SHEET Contents Page Section Title 4 4 6 1. 1.1. 1.2. General Description Features Block Diagram 7 7
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9489X,
9589X
6251-562-1DS
9589X
9489X
SDA9400
BGY 702
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PAL60
Abstract: v2h smd code 437 BGY SDA938 VFP-3 v-chip
Text: PRELIMINARY DATA SHEET SDA 9489X PIP IV Advanced SDA 9589X SOPHISTICUS High-End Picture-In-Picture ICs Edition Feb. 28, 2001 6251-562-1PD SDA 9489X Preliminary Data Sheet SDA 9589X High-end Picture-In-Picture PIP ICs Version 1.3 CMOS General Description
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9489X
9589X
6251-562-1PD
9489X
9589X
PAL60
v2h smd code
437 BGY
SDA938
VFP-3
v-chip
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MT8816
Abstract: MSAN-133 k2n12x16x131
Text: Application Note MSAN-133 Designing Large Switching Matrices Using Mitel Analog Switch Arrays ISSUE 1 January 1990 switch matrix will be discussed briefly and examples will be presented. The MT8816 8x16 crosspoint switch is used as the primary example because its
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MSAN-133
MT8816
k2n12x16x131
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Untitled
Abstract: No abstract text available
Text: □ IXYS DSS 2x81-0035/45B Power Schottky Rectifier •f a v V rrm vP 2x80 A 35-45 V 0.64 V P r e lim in a r y D a ta V RRM V 35 45 35 45 RSM Symbol Type b I_ -H - -t-o -W - DSS 2X81-0035B DSS 2X81-0045B Test Conditions Maximum Ratings ^FA V M Tc = 75°C; rectangular, d = 0.5
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2x81-0035/45B
2X81-0035B
2X81-0045B
OT-227
flb52fc>
GDD470T
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S1101A
Abstract: SV200 ATIC 224
Text: SIEMENS SIMOPAC Module V DS / D = 200 V =2x81 A ^ = 0.03 • • • • • • D S o n BSM 224 A £2 Power module Half-bridge N channel Enhancem ent mode Package with insulated metal base plate Package outline/C ircuit diagram : 2a1) Type O rdering Code
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67076-S1101-A2
S1101A
SV200
ATIC 224
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Untitled
Abstract: No abstract text available
Text: n ix Y S _ Power Schottky Rectifier DSS 2x81 lFAV = 2x79 A V rrm = 3 5 - 4 5 mini BLOC, SOT-227 B Preliminary data V RSM V 35 45 35 45 w\ Type V rrm V 01 M PI 10 1 1 0n • DSS 2x81-0035A DSS 2x81 -0045A Symbol Test Conditions ^FRMS T "v j Maximum Ratings per diode
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OT-227
2x81-0035A
-0045A
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2x81-0045
Abstract: E72873
Text: Power Schottky Rectifier ^FAV V rRM Vf 2x80 A 3 5 -45 V 0.64 V Preliminary Data RSM V V 35 45 35 45 Symbol -i-o Type RRM -WDSS 2X81-0035B DSS 2X81-0045B Test Conditions Maximum Ratings ^FAVM Tc = 75°C; rectangular, d = 0.5 Tc = 75°C; rectangular, d = 0.5; per device
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2X81-0035B
2X81-0045B
OT-227
728ge
2x81-0045
E72873
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810035
Abstract: No abstract text available
Text: n ix Y S OSS 2x 81-0035/45B Power Schottky Rectifier lFAV = 2x80 A VRRM = 35 - 45 V VF = 0.64 V Preliminary Data RSM Type RRM V V 35 45 35 45 Symbol -W - ^FAVM ^FSM DSS 2X81-0035B DSS 2X81-0045B Test Conditions Maximum Ratings Tc = 75°C; rectangular, d = 0.5
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81-0035/45B
OT-227
2X81-0035B
2X81-0045B
2X81-0035/45B
810035
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512Kx1
Abstract: No abstract text available
Text: DENSE-PAC M I C .R O S T S T E M S 1 Megabit SRAM / 8 Megabit FLASH 2X816NY5 ADVANCED INFORMATION DESCRIPTION: The DP3SZ1 2851 2X81 6N Y5 modules are a revolutionary new memory subsystem using D ense-Pac M ic ro s y s te m s ' T S O P stacking technology. The Module packs 1-Megabit of
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DP3SZ128512X816NY5
128Kx8
512Kx16
DP3SZ128512X816NY5
100ns
30A195-00
512Kx1
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siemens ts 4140
Abstract: slma PEB2040 TS01S HSCC "digital switching system" TI344
Text: SIEMENS Memory Time Switch CMOS MTSC PEB 2045 PEF 2045 Preliminary Data 1 CMOS IC Features • Time/space switch for 2048-, 4096- or 8192-kbit/s PCM systems • Switching of up to 512 incoming PCM channels to up to 256 outgoing PCM channels • 16-input and 8-output PCM lines
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8192-kbit/s
16-input
8192-kHz
2048-kHz
0235b05
P-DIP-40
siemens ts 4140
slma
PEB2040
TS01S
HSCC
"digital switching system"
TI344
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LT3973-3.3
Abstract: 2x52 2X72 LM3670MFX-0.8 LT3971-3.3
Text: r All rights strictly reserved. Reproduction o r issue to third parties in any form Tous droits strictem ent reserves. sous quelque form e que ce soit sans autorisation ecrite du propietaire. Property o f B £ R G ELECTRONICS Propriété d e © B E R G ELECTRONICS.
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001-lt
s/17/ao
LT3973-3.3
2x52
2X72
LM3670MFX-0.8
LT3971-3.3
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EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main
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siemens igbt BSM 25GD 100D
Abstract: siemens igbt BSM 25gd bsm25gd100d BSS 97 bts412a BSM15GD100D BTS 131 SIEMENS Bts 629 BSS145 siemens igbt BSM 25 gb 100 d
Text: Typenübersicht/Selection Guide SIPMOS Power MOS Transistors Families of Types Type ^DS(max) ^D S(on)m ax ^D{max] V Q A Ptoi Package Page W N channel enhancement types £ 0 BUZ 10 EÜL BUZ 10 L 50 0.07 0.07 23 23 75 75 TO-220AB TO-220AB 690 700 £ □ BUZ 11
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O-220AB
O-220
2x100
2x150
100GAL
siemens igbt BSM 25GD 100D
siemens igbt BSM 25gd
bsm25gd100d
BSS 97
bts412a
BSM15GD100D
BTS 131 SIEMENS
Bts 629
BSS145
siemens igbt BSM 25 gb 100 d
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Siemens PEB 2045
Abstract: "digital switching system" smd marking 2045
Text: SIEM ENS Memory Time Switch CMOS MTSC PEB 2045 PEF 2045 Preliminary Data 1 CMOS 1C Features • Time/space switch for 2048-, 4096- or 8192-kbit/s PCM systems • Switching of up to 512 incoming PCM channels to up to 256 outgoing PCM channels • 16-input and 8-output PCM lines
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8192-kbit/s
16-input
8192-kHz
2048-kHz
P-DIP-40
Siemens PEB 2045
"digital switching system"
smd marking 2045
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ps 4512 diode
Abstract: SS44A P61089 PS-4512 diode
Text: T1SP61089 DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS NOVEMBER 1995 - R EVEED JAN U A W 199« PROGRAMMABLE SLIC OVERVOLTAGE PROTECTION • • Dual Voltage-Programmable Protectors - Wide 0 to -80 V Programming Range - Low 5 mA max. Gate Triggering Current
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T1SP61089
TISP61089
TISP61089.
ps 4512 diode
SS44A
P61089
PS-4512 diode
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BA 758
Abstract: ba 658 I8287 IC 8783 N
Text: r All rights strictly reserved. Reproduction o r issue to third parties in any form whatever is not permitted without written authority from the proprietor. Property o f B E R G ELEC TR O N IC S Copyright B E R G ELEC TR O N IC S INC. BERG Tous droits strictem ent reserves.
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ci cd 4058
Abstract: pin IC 8783 n IC 8783 N ic 4058 ci 4058 67684-540 2453-1 9958 2X72
Text: r All rights strictly reserved. Reproduction o r issue to third parties in any form whatever is not permitted without written authority from the proprietor. Property o f B E R G ELEC TR O N IC S Copyright B E R G ELEC T R O N IC S INC. BERG Tous droits strictem ent reserves.
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ELE858/250
ci cd 4058
pin IC 8783 n
IC 8783 N
ic 4058
ci 4058
67684-540
2453-1
9958
2X72
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8895
Abstract: LT 5220 2X61 lt 6655 2290C 2X47 LT 7220
Text: REVISIONS PRODUCT NO SEE TABLE REV DESCRIPTION BY DATE E D I00±.003 2.54 ±.08 TYP NON-ACCUMULATIVE NOTES. 1. HOUSING MATERIAL. THERMOPLASTIC POLYESTER FLAME RETARDANT. PER UL 94V-0 COLOR. BLACK 2. TERMINAL MATERIAL. BODY. CUPRO-NICKEL .010/.25 THICK. SPRING. BE-CU. HEAT TREATED
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