2SK676 Search Results

2SK676 Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
2SK67-6		Unknown	Shortform Datasheet & Cross References Data		Short Form	PDF
2SK676		Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)		Short Form	PDF
2SK676		Unknown	FET Data Book		Scan	PDF
2SK676H5		Unknown	FET Data Book		Scan	PDF

2SK676 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: 2SK676H5-2 Transistors N-Channel UHF/Microwave HEMT V BR DSS (V)5 V(BR)GSS (V) I(D) Max. (A)70m P(D) Max. (W) Maximum Operating Temp (øC) I(DSS) Min. (A)10m I(DSS) Max. (A)70m @V(DS) (V) (Test Condition)2 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.25m	Original	PDF	2SK676H5-2
Untitled Abstract: No abstract text available Text: 2SK676-2 Transistors N-Channel UHF/Microwave HEMT V BR DSS (V)5.0 V(BR)GSS (V)-3.5 I(D) Max. (A)70m P(D) Max. (W)340m Maximum Operating Temp (øC)150’ I(DSS) Min. (A)10m I(DSS) Max. (A)70m @V(DS) (V) (Test Condition)2 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.25m	Original	PDF	2SK676-2
Untitled Abstract: No abstract text available Text: SONY CORP/COMPONENT P RODS M^E D • 6362363 0003113 b «SONY 2SK676H51 SONY. AtGaAs/GaAs Low Noise Microwave HEM T GHIP Description Chip outline •Unit: jum The 2S K 676H 5 is an AIGaAs/GaAs HEMT chip fabricated by MOCVD M etal Organic Chemical Vapor Deposition . This 0.5 micron	OCR Scan	PDF	2SK676H51 2SK676H5
2SK676 Abstract: GaAs FET HEMT Chips Text: 2SK676H5 SONY AIGaAs/GaAs Low Noise Microwave HEMT CHIP Description Chip outline Unit: jum The 2SK 676H 5 is an AIGaAs/GaAs HEMT chip fabricated by MOCVD Metal Organic Chemical Vapor Deposition . This 0.5 micron gate FET features very low noise figure and high	OCR Scan	PDF	2SK676H5 2SK676H 2SK676 GaAs FET HEMT Chips
2SK566 Abstract: 2SK676 2SK989 2SK677 2SK587 3SK165 2SK67-6 2SK9 2SK677-2 2SK676-1 Text: SONY CORP/COMPONENT PRODS 0 3 0 2 3 0 3 0 0 0 2 1 3 4 =1 IfiE D 2SK676 AIGaAs/GaAs Low Noise Microwave HEMT Description Package Outline Unit: mm The 2 SK 6 7 6 is an AIGaAs/GaAs HEMT fabricated by MOCVD Metal Organic Chemical Vapor Deposition . This 0.5 micron gate FET	OCR Scan	PDF	2SK676 power12 GD02137 T-31-25 12GHz 2SK566 2SK989 2SK677 2SK587 3SK165 2SK67-6 2SK9 2SK677-2 2SK676-1
2SK653 Abstract: 2SK652 2SK671 Gv-80dB 2SK674 2SK650 2SK669 150ni 2SK677 2SK649 Text: - 60 - M £ ft ffl € & flt £ f •ç !• 4 1 H 2S K 6 4 8 m X [H# * * V æ fê ft £ * (V) * P d/Pch I gss (W) (max) (A) Vg s (V) ^ (min) (A) (max) (A) Vd s (V) W fî tt ( T a = 2 5 <C ) (min) (V) (max) V d s (V) (V) (min) (S) Id (A) (typ) V d s	OCR Scan	PDF	2SK648 2SK649 2SK650 2SK651 150ni 2SK652 2SK665 50MHz 2SK666 2SK765 2SK653 2SK671 Gv-80dB 2SK674 2SK669 2SK677
2sk125 Abstract: SLD300 photo magneto electric 1T32 SLD203 ic dm 311 SGM2006M "CD pickup" 1T339 Text: 2. 1 Index by Usage Variable Capacitance Diodes Type 1T32 1T32A 1T33 1T33A Package 2P Mini mold 1T33C 1T362 1T363 2P Super Mini mold 1T364 1T359 2P Mini mold 1T360 Remark Application Voltage V) Page Smaller package UH F/V H F tuning 31 AC: 3% (1T32A: 2%)	OCR Scan	PDF	1T32A 1T33A 1T33C 1T362 1T363 1T364 1T359 1T360 1T32A: 1T33A: 2sk125 SLD300 photo magneto electric 1T32 SLD203 ic dm 311 SGM2006M "CD pickup" 1T339
sgh5002f Abstract: SGM2004M 1T32 dm211 DM-111 DM-211 1T339 2SK152 SGM2006M phd003 Text: 1. Type Page List of Model Names Type Page Type Page 1T32/1T32A 31 SLD202U/V 73 SLU302XR 193 1T33/1T33A 34 SLD202U-3/V-3 76 SLU303VR 197 1T33C 37 SLD203AV 79 SLU303XR 201 1T339 335 SLD301B 102 SLU304VR 205 1T359 49 SLD301V 82 SLU304XR 209 1T360 51 SLD301WT	OCR Scan	PDF	1T32/1T32A 1T33/1T33A 1T33C 1T339 1T359 1T360 1T362 1T363 1T364 PHD003 sgh5002f SGM2004M 1T32 dm211 DM-111 DM-211 2SK152 SGM2006M