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    2SK2886 Search Results

    2SK2886 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK2886 Toshiba FETs Nch 30V Original PDF
    2SK2886 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    2SK2886 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK2886 Toshiba Original PDF
    2SK2886 Toshiba Field Effect Transistor Silicon N Channel MOS Type Scan PDF
    2SK2886 Toshiba Silicon N-channel MOS type field effect transistor for high speed, high current switching, chopper regulator, DC-DC converter, motor drive applications Scan PDF

    2SK2886 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K2886

    Abstract: 2SK2886 25a27
    Text: 2SK2886 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅤ 2SK2886 ○ DC−DC コンバータモータドライブ用 単位: mm : RDS (ON) = 14mΩ(標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 31S (標準)


    Original     		PDF 2SK2886 10VID SC-67 2-10R1B K2886 2002/95/EC) K2886 2SK2886 25a27

    2SK2886

    Abstract: No abstract text available
    Text: 2SK2886 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2886 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 14 mΩ (typ.) High forward transfer admittance : |Yfs| = 31 S (typ.)


    Original     		PDF 2SK2886 2SK2886

    K2886

    Abstract: 2SK2886
    Text: 2SK2886 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2886 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 14 mΩ (typ.) z High forward transfer admittance : |Yfs| = 31 S (typ.)


    Original     		PDF 2SK2886 K2886 2SK2886

    2SK2886

    Abstract: No abstract text available
    Text: 2SK2886 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2886 Chopper Regulator, DC−DC Converter and Motor Drive Applications l Low drain−source ON resistance : RDS (ON) = 14 mΩ (typ.) l High forward transfer admittance : |Yfs| = 31 S (typ.)


    Original     		PDF 2SK2886 2SK2886

    k2886

    Abstract: DATASHEET k2886 2sk2886 K288
    Text: 2SK2886 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2886 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 14 mΩ (typ.) High forward transfer admittance : |Yfs| = 31 S (typ.)


    Original     		PDF 2SK2886 k2886 DATASHEET k2886 2sk2886 K288

    k2886

    Abstract: DR-45 Product POWER TRANSISTOR Electronics 0 DATASHEET k2886 2SK2886
    Text: 2SK2886 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2886 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 14 mΩ (typ.) z High forward transfer admittance : |Yfs| = 31 S (typ.)


    Original     		PDF 2SK2886 k2886 DR-45 Product POWER TRANSISTOR Electronics 0 DATASHEET k2886 2SK2886

    K2886

    Abstract: 2SK2886 tf 130 JEITA SC-67
    Text: 2SK2886 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅤ 2SK2886 ○ DC−DC コンバータモータドライブ用 単位: mm : RDS (ON) = 14mΩ(標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 31S (標準)


    Original     		PDF 2SK2886 10VID SC-67 2-10R1B K2886 2002/95/EC) K2886 2SK2886 tf 130 JEITA SC-67

    Untitled

    Abstract: No abstract text available
    Text: 2SK2886 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2886 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 14 mΩ (typ.) High forward transfer admittance : |Yfs| = 31 S (typ.)


    Original     		PDF 2SK2886

    k2886

    Abstract: No abstract text available
    Text: 2SK2886 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2886 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 14 mΩ (typ.) z High forward transfer admittance : |Yfs| = 31 S (typ.)


    Original     		PDF 2SK2886 k2886

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF

    2SK2056

    Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
    Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1


    Original     		PDF BCE0017B 2SK2056 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078

    STR-G6551

    Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
    Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision


    Original     		PDF 2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		PDF BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603

    2SK3878 equivalent

    Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
    Text: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)


    Original     		PDF 2SK2963 2SK2962 2SJ508 2SJ509 2SK3670 2SJ313 2SJ338 2SK2013 2SK2162 2SJ360 2SK3878 equivalent 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718

    TPCA*8064

    Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
    Text: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF BCE0082B TPCA*8064 TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    IRF540 complementary

    Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
    Text: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3


    Original     		PDF RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L IRF540 complementary IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    2SK2886

    Abstract: nsi 60 jg
    Text: TOSHIBA 2SK2886 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2886 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATORS, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 10 ±0.3 r


    OCR Scan     		PDF 2SK2886 2SK2886 nsi 60 jg

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SK2886 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE tt-M O S V 2SK2886 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATORS, DC-DC CONVERTER A N D M O TOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS


    OCR Scan     		PDF 2SK2886 --45A,

    2SK2886

    Abstract: nsi 60 jg S20 marking diode
    Text: TOSHIBA 2SK2886 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2886 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPjt CHOPPER REGULATORS, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 10 ±0.3 Low Drain-Source ON Resistance


    OCR Scan     		PDF 2SK2886 2SK2886 nsi 60 jg S20 marking diode

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2886 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2886 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATORS, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS • • •


    OCR Scan     		PDF 2SK2886 14mfi

    213H

    Abstract: No abstract text available
    Text: TO SHIBA 2SK2886 TOSHIBA FIELD EFFECT TRANSISTOR SILICON IM CHANNEL MOS TYPE tt-M OSV 2SK2886 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATORS, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • • INDUSTRIAL APPLICATIONS Unit in mm


    OCR Scan     		PDF 2SK2886 14mil 10msi& --45A, 213H