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    2SK2796 Search Results

    2SK2796 Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    2SK2796STL-E Renesas Electronics Corporation Nch Single Power Mosfet 60V 5A 160Mohm DPAK(S)/To-252 Visit Renesas Electronics Corporation
    2SK2796L-E Renesas Electronics Corporation Nch Single Power Mosfet 60V 5A 160Mohm DPAK(L)-(1)/To-251 Visit Renesas Electronics Corporation
    2SK2796STR-E Renesas Electronics Corporation Nch Single Power Mosfet 60V 5A 160Mohm DPAK(S)/To-252 Visit Renesas Electronics Corporation
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    2SK2796 Price and Stock

    Renesas Electronics Corporation 2SK2796STL-E

    Trans MOSFET N-CH Si 60V 5A 3-Pin(2+Tab) DPAK(S) T/R
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    Verical 2SK2796STL-E 2,481 33
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    • 100 $0.7137
    • 1000 $0.5912
    • 10000 $0.5525
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    Chip1Stop 2SK2796STL-E Cut Tape 2,497
    • 1 $1.56
    • 10 $0.766
    • 100 $0.567
    • 1000 $0.47
    • 10000 $0.439
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    Renesas Electronics Corporation 2SK2796STLEZZZZ

    HIGH SPEED POWER SWITCHING SILICON N CHANNEL MOS FET Power Field-Effect Transistor, 5A I(D), 60V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA 2SK2796STLEZZZZ 3,000
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    2SK2796 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK2796 Hitachi Semiconductor Power Mosfet 5th Generation Original PDF
    2SK2796 Hitachi Semiconductor Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2796 Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2796(L) Hitachi Semiconductor Power switching MOSFET Original PDF
    2SK2796L Hitachi Semiconductor Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2796(L) Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2796L Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2796L Renesas Technology High Speed Power Amplifier, 60V 5A 20W, MOS-FET N-Channel enhanced Original PDF
    2SK2796L-E Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2796(S) Hitachi Semiconductor Power switching MOSFET Original PDF
    2SK2796S Hitachi Semiconductor Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2796S Kexin N-Channel MOSFET Original PDF
    2SK2796(S) Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2796S Renesas Technology SMD, High Speed Power Amplifier, 60V 5A 20W, MOS-FET N-Channel enhanced Original PDF
    2SK2796S Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2796S TY Semiconductor N-Channel MOSFET - TO-252 Original PDF

    2SK2796 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK2796L

    Abstract: 2SK2796S Hitachi DSA00117
    Text: 2SK2796L, 2SK2796S Silicon N Channel MOS FET High Speed Power Switching Target Specification 1st. Edition October 1996 Features • • • Low on-resistance RDS on = 0.12Ω typ. 4V gate drive devices. High speed switching Outline DPAK 4 4 D 2 1 2 G 1 3


    Original     		PDF 2SK2796L, 2SK2796S 2SK2796L 2SK2796S Hitachi DSA00117

    2SK2796

    Abstract: Hitachi DSA00117
    Text: 2SK2796 L , 2SK2796(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-534C (Z) 4th. Edition Jul. 1998 Features • Low on-resistance R DS(on) = 0.12Ω typ. • 4V gate drive devices. • High speed switching Outline DPAK |1 4 4 D 1 2 3 G S 1 2


    Original     		PDF 2SK2796 ADE-208-534C Hitachi DSA00117

    2SK2796STL

    Abstract: 2SK2796 2SK2796L-E 2SK2796STL-E PRSS0004ZD-A PRSS0004ZD-C
    Text: 2SK2796 L , 2SK2796(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1034-0500 (Previous: ADE-208-534C) Rev.5.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 0.12 Ω typ. • 4 V gate drive devices. • High speed switching Outline RENESAS Package code: PRSS0004ZD-A


    Original     		PDF 2SK2796 REJ03G1034-0500 ADE-208-534C) PRSS0004ZD-A PRSS0004ZD-C 2SK2796STL 2SK2796L-E 2SK2796STL-E PRSS0004ZD-A PRSS0004ZD-C

    2SK2796

    Abstract: Hitachi DSA00238
    Text: 2SK2796 L , 2SK2796(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-534C (Z) 4th. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.12Ω typ. • 4V gate drive devices. • High speed switching Outline DPAK |1 4 4 D 1 2 3 G S 1 2


    Original     		PDF 2SK2796 ADE-208-534C Hitachi DSA00238

    Hitachi DSA002749

    Abstract: No abstract text available
    Text: 2SK2796 L , 2SK2796(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-534C (Z) 4th. Edition June 1, 1998 Features • Low on-resistance R DS(on) = 0.12Ω typ. • 4V gate drive devices. • High speed switching Outline DPAK| 1 4 4 D 1 2 3 G


    Original     		PDF 2SK2796 ADE-208-534C m005-1835 D-85622 Hitachi DSA002749

    Untitled

    Abstract: No abstract text available
    Text: IC SMD Type Product specification 2SK2796S TO-252 Features Low on-resistance typ. +0.15 1.50-0.15 RDS = 0.12 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28


    Original     		PDF 2SK2796S O-252

    2SK2796S

    Abstract: No abstract text available
    Text: IC MOSFET SMD Type Silicon N-Channel MOSFET 2SK2796S TO-252 Features Low on-resistance typ. +0.15 1.50-0.15 RDS = 0.12 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1


    Original     		PDF 2SK2796S O-252 2SK2796S

    ADE-208-534

    Abstract: Hitachi DSA002780
    Text: 2SK2796 L , 2SK2796 (S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-534 A 2nd. Edition Features • Low on-resistance RDS(on) = 0.12Ω typ. • 4V gate drive devices. • High speed switching Outline 2SK2796 (L), 2SK2796 (S) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SK2796 ADE-208-534 Hitachi DSA002780

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    2SK3235

    Abstract: 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053
    Text: HAT2038R/HAT2038RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-666C Z 4th. Edition Feb. 1999 Features • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting


    Original     		PDF HAT2038R/HAT2038RJ ADE-208-666C HAT2038R HAT2038RJ pdf\7420e HAT1044M HAT1053M 2SK3235 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053

    2sk 4207

    Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
    Text: CONTENTS Index . 5 General Information . 9


    Original     		PDF D-85622 2sk 4207 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent

    7054F

    Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
    Text: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver


    Original     		PDF 2sc4537 2sc454. 2sc4591 2sc4592 2sc4593 2sc460. 2sc4628 2sc4629 2sc4643 2sc4680 7054F BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557

    TO220CFM

    Abstract: 2SK2554 TO-220CFM to-3p(i)d series HAT1020R HAT1021R HAT1023R HAT1024R HAT1026R HAT2016R
    Text: Power Mosfet 5th Generation The Performance Revolution Literature Order Number Revision Number 5/14/97 Hitachi Europe, Ltd. European Marketing Power Mosfet 5th Generation - The Performance Revolution 1.1 RDS ON 4.5m Ohm - A new standard has been set With the introduction of the new D5-Series HITACHI started a new age of RDS (ON)


    Original     		PDF 2SK2927* O-220 2SK2928* 2SK2929* 2SK2930* 2SK2931* TO220CFM 2SK2554 TO-220CFM to-3p(i)d series HAT1020R HAT1021R HAT1023R HAT1024R HAT1026R HAT2016R

    STF12A80

    Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
    Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer


    Original     		PDF 02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B

    1002ds

    Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
    Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2


    Original     		PDF 2SC5998" C5139 2SC5247 2SC5907 2SD1504 2SJ361 2SK439 2SK494 2SK3349 BCR5KM-12L 1002ds 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


    Original     		PDF REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055

    lvc16244

    Abstract: BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP
    Text: HITACHI ELECTRONIC COMPONENTS DATABOOK 2003 INDEX General Informations Multi Perpose Products Safety Considerations Hitachi Semiconductor Package Databook HITACHI Sales Locations Diodes Microcontroller Microcontroller General Microcontroller Overview List


    Original     		PDF HD49323A HA12134A HA12141N HA12155N HA12163 HA12167F HA12173 HA12179F HA12181F HA12187F lvc16244 BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP

    hitachi j50

    Abstract: 2SK1168 HA16116 "cross reference" TRANSISTOR MARKING YB 826 ADE-408 GG 84 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2sk1058 2SJ162 2sj177 2SJ182 equivalent
    Text: CONTENTS Index . 5 General Information . 9


    Original     		PDF D-85622 hitachi j50 2SK1168 HA16116 "cross reference" TRANSISTOR MARKING YB 826 ADE-408 GG 84 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2sk1058 2SJ162 2sj177 2SJ182 equivalent

    2SC 8550

    Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
    Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4


    Original     		PDF 3SK309 3SK317 3SK318 BB101C BB102C BB301C BB302C BB304C BB305C BB501C 2SC 8550 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


    Original     		PDF REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009

    Untitled

    Abstract: No abstract text available
    Text: 2SK2796 L , 2SK2796(S) Silicon N Channel MOS FET High Speed Power Switching HITACHI Features • Low on-resistance R ds(oii) = 0.12Í2 typ. • 4V gate drive devices. • High speed switching Outline DPAK |1 Í I 1. 2. 3. 4. G ate Drain S ource Drain ADE-208-534C (Z)


    OCR Scan     		PDF 2SK2796 ADE-208-534C 2SK2796Ã

    Untitled

    Abstract: No abstract text available
    Text: 2SK2796 L , 2SK2796 (S) Silicon N Channel MOS FET High Speed Power Switching HITACHI Features • Low on-resistance EWn) = 0.12Otyp. • 4V gate drive devices. • High speed switching Outline DPAK i # 1. 2. 3. 4. 1 122 G ate Drain Source Drain ADE-208-534 A


    OCR Scan     		PDF 2SK2796 12Otyp. ADE-208-534 oK2796

    2SK975 equivalent

    Abstract: k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk .model 2SK216 TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent DRUM DRIVER 2sj44
    Text: Section 1 Lineup by Application 1.1 Power Supply Use 1 R ecom m ended products in each pow er range Recommended Products in Each Power Range Type power supply Voltage Up to 1 0 W 10 W tO 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 200 W 100 V to 132 V AC


    OCR Scan     		PDF 2SK1151 2SK1152 2SK1862 2SK1863 2SK1155 2SK1157 2SK1313 2SK1314 2SK1540 2SK1541 2SK975 equivalent k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk .model 2SK216 TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent DRUM DRIVER 2sj44

    2SK2728

    Abstract: 2sk2729
    Text: Replacements for Power MOS FET We recommend that you consider replacing your current Power MOS FET when you develop a new product because the following product types will become obsolete. Current type Replacement 2SK741 2SK1667 2SK970 2SK2927 2SK971 2SK2928, 2SK2929


    OCR Scan     		PDF 2SK741 2SK970 2SK971 2SK972 2SK973 2SK974 2SK1093 2SK1094 2SK2728 2sk2729