2SK2315TYTR Search Results

2SK2315TYTR Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SK2315TYTR-E		Renesas Electronics Corporation	Nch Single Power Mosfet 60V 2A 0.6Mohm Upak

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Renesas Electronics Corporation 2SK2315TYTR-E MOSFET N-CH 60V 2A UPAK
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Renesas Electronics Corporation 2SK2315TYTR
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2SK2315TYTR Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
2SK2315TYTR		Renesas Technology	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 2A UPAK		Original	PDF
2SK2315TYTR-E		Renesas Technology	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 2A 4-UPAK		Original	PDF
2SK2315TYTR-E		Renesas Technology	Silicon N Channel MOS FET		Original	PDF

2SK2315TYTR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SK2315TYTR Abstract: 2SK2315 2SK2315TYTL-E 2SK2315TYTR-E 2SK2315TY(TR-E) Text: 2SK2315 Silicon N Channel MOS FET REJ03G1006-0200 Previous: ADE-208-1354 Rev.2.00 Sep.07,2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source.	Original	PDF	2SK2315 REJ03G1006-0200 ADE-208-1354) PLZZ0004CA-A 2SK2315TYTR 2SK2315 2SK2315TYTL-E 2SK2315TYTR-E 2SK2315TY(TR-E)
2SK2315 Abstract: 2SK2315TYTL-E 2SK2315TYTR-E Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF
Untitled Abstract: No abstract text available Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF
2SK2315 Abstract: 2SK2315TYTL-E 2SK2315TYTR-E Text: 2SK2315 Silicon N Channel MOS FET REJ03G1006-0200 Previous: ADE-208-1354 Rev.2.00 Sep.07,2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source.	Original	PDF	2SK2315 REJ03G1006-0200 ADE-208-1354) PLZZ0004CA-A 2SK2315 2SK2315TYTL-E 2SK2315TYTR-E