Untitled
Abstract: No abstract text available
Text: 2SK2213-01L,S N-channel MOS-FET FAP-IIA Series 500V > Features - 0,76Ω 10A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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2SK2213-01L
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2SK2219
Abstract: No abstract text available
Text: Ordering number:ENN4755 N-Channel Junction Silicon FET 2SK2219 Capacitor Microphone Applications Package Dimensions unit:mm 2058A 0.3 0.2 [2SK2219] 0.15 3 0 to 0.1 0.425 2.1 1.250 • Ultrasmall-sized package permitting 2SK2219applied sets to be made small and slim.
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ENN4755
2SK2219
2SK2219]
2SK2219applied
2SK2219
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1020C
Abstract: 2SK2212 DSA003639
Text: 2SK2212 Silicon N-Channel MOS FET ADE-208-1351 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter, Moter Control
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2SK2212
ADE-208-1351
O-220FM
30ectronic
1020C
2SK2212
DSA003639
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2SK2212
Abstract: Hitachi DSA00389
Text: 2SK2212 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter, Moter Control Outline TO-220FM
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2SK2212
O-220FM
2SK2212
Hitachi DSA00389
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2SK2212-E
Abstract: 2SK2212 PRSS0003AD-A c source code motor speed
Text: 2SK2212 Silicon N Channel MOS FET REJ03G1003-0200 Previous: ADE-208-1351 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter, motor control
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2SK2212
REJ03G1003-0200
ADE-208-1351)
PRSS0003AD-A
O-220FM)
2SK2212-E
2SK2212
PRSS0003AD-A
c source code motor speed
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2SK2213-01L
Abstract: No abstract text available
Text: 2SK2213-01L,S N-channel MOS-FET FAP-IIA Series 500V > Features - 0,76Ω 10A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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2SK2213-01L
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2SK2216
Abstract: hitachi FET Hitachi DSA00347
Text: 2SK2216 Silicon N-Channel MOS FET ADE-208-346A 2nd. Edition Application UHF power amplifier Features • High power output, high gain, high efficiency PG = 9.7 dB, Pout = 140 W, ηD = 55% typ f = 860 MHz • Compact package Suitable for push - pull circuit
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2SK2216
ADE-208-346A
2SK2216
hitachi FET
Hitachi DSA00347
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Untitled
Abstract: No abstract text available
Text: 2SK2210 Power F-MOS FETs 2SK2210 Silicon N-Channel Power F-MOS Unit : mm • Features ● Avalanche energy capability guaranteed ● High-speed ø3.2±0.1 2.9±0.2 secondary breakdown ● Solenoid ● Motor +0.5 ● Non-contact 13.7 -0.2 ■ Applications relay
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2SK2210
O-220E
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grg 250
Abstract: 2SK2218 ITR02610 ITR02611 ITR02612 ITR02613 ITR02614 ITR02615 ITR02616 ITR02617
Text: 注文コード No. N 5 2 0 2 2SK2218 No. N5202 70999 2SK2218 特長 N チャネル接合形シリコン電界効果トランジスタ 高周波低雑音増幅用 ・FBET プロセス採用。 ・アマチュア無線機用。 ・UHF 帯増幅 , 混合 , 発振用 , アナログスイッチ用。
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2SK2218
N5202
250mm2
700MHz
--j50
ITR02633
ITR02634
grg 250
2SK2218
ITR02610
ITR02611
ITR02612
ITR02613
ITR02614
ITR02615
ITR02616
ITR02617
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2SK2211
Abstract: No abstract text available
Text: Silicon MOS FETs Small Signal 2SK2211 Silicon N-Channel MOS FET For switching Unit: mm 4.5±0.1 • Features 1.6±0.2 1.5±0.1 1.5±0.1 3° 1.0+0.1 –0.2 3 2 0.5±0.08 1 0.4±0.08 2.5±0.1 4.0+0.25 –0.20 ● Low ON-resistance RDS(on) ● High-speed switching
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2SK2211
2SK2211
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2sk2210
Abstract: 2SK221
Text: 2SK2210 Power F-MOS FETs 2SK2210 Silicon N-Channel Power F-MOS Unit : mm • Features ● Avalanche energy capability guaranteed ● High-speed switching ø3.2±0.1 ● Solenoid ● Motor relay drive drive ● Control equipment ● Switching 7˚ mode regulator
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2SK2210
2sk2210
2SK221
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2SK2211
Abstract: No abstract text available
Text: Silicon MOS FETs Small Signal 2SK2211 Silicon N-Channel MOS FET Unit : mm For switching 1.5±0.1 4.5±0.1 0.4±0.08 2.5±0.1 0.4 max. 45˚ +0.1 • Low ON-resistance RDS(ON) • High-speed switching • Mini-power type package, allowing downsizing of the sets and
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2SK2211
2SK2211
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2SK2213-01L
Abstract: 2sk2213 2SK2213-01L,S
Text: 2SK2213-01L,S FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES 4.5 ±0.2 1.32 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof
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2SK2213-01L
2sk2213
2SK2213-01L,S
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2SK2212
Abstract: No abstract text available
Text: 2SK2212 Silicon N Channel MOS FET Application TO–220FM High speed power switching Features • • • • • Low on–resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC – DC converter,Motor Control
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2SK2212
220FM
2SK2212
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Hitachi DSA002781
Abstract: No abstract text available
Text: 2SK2216 Silicon N-Channel MOS FET ADE-208-346A 2nd. Edition Application UHF power amplifier Features • High power output, high gain, high efficiency PG = 9.7 dB, Pout = 140 W, ηD = 55% typ f = 860 MHz • Compact package Suitable for push - pull circuit
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2SK2216
ADE-208-346A
Hitachi DSA002781
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Hitachi DSA002749
Abstract: No abstract text available
Text: 2SK2212 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter, Moter Control
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2SK2212
O-220FM
D-85622
Hitachi DSA002749
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK2211 Silicon N-channel MOSFET Unit: mm 4.5±0.1 For switching circuits 1.6±0.2 1.5±0.1 1.5±0.1 2.5±0.1 3˚ 3 2 0.5±0.08 1 0.4±0.08 1.0+0.1 –0.2 • Low ON resistance
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2002/95/EC)
2SK2211
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2SK2212
Abstract: 2SK2212-E PRSS0003AD-A
Text: 2SK2212 Silicon N Channel MOS FET REJ03G1003-0200 Previous: ADE-208-1351 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter, motor control
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2SK2212
REJ03G1003-0200
ADE-208-1351)
PRSS0003AD-A
O-220FM)
2SK2212
2SK2212-E
PRSS0003AD-A
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Untitled
Abstract: No abstract text available
Text: 2SK2212 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC-DC converter, Moter Control
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2SK2212
O-220FM
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A2430
Abstract: schematic TV TCL A2428 2SK2215 2SK2215-01 2SK2215-01L T151 c81 004 TV TCL Schematic
Text: 2SK2215-01L, S FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES • Features • H g h speed s w itc h in g • Low o n-resistance • No se condary b reakdow n • Low drivin g p o w e r • Hi jh voltage • V,-; = ± 3 0 V Guarantee • A v a la n c h e -p ro o f
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2SK2215-01L,
A2430
schematic TV TCL
A2428
2SK2215
2SK2215-01
2SK2215-01L
T151
c81 004
TV TCL Schematic
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Untitled
Abstract: No abstract text available
Text: 2SK2217 Silicon N-Channel MOS FET HITACHI ADE-208-347A 2nd. Edition Application UHF power amplifier Features • High power output, high gain, high efficiency PG = 10 dB , Pout = 60 W, r|D = 55% typ f = 860 M Hz • Compact package Outline ; RFPAK-C 3 _
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2SK2217
ADE-208-347A
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Untitled
Abstract: No abstract text available
Text: FU JI 2SK2213-01L,S N-channel MOS-FET FAP-IIA Series 500V > Features 0 ,7 6 Q 10A 80W > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - V gs = ± 30V Guarantee - Avalanche Proof > Applications
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2SK2213-01L
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Untitled
Abstract: No abstract text available
Text: p u jr i 2SK2215-01 L,S N-channel MOS-FET FAP-IIA Series > Features - 600V 1 ,2 Q 8A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications -
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2SK2215-01
/120V
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IRF 426
Abstract: A2426
Text: 2SK2213-01L, S FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES IOutline Drawings • Features • Hich speed switching • Low on-resistance • No secondary breakdown • Low driving power • Hie h voltage • V GS - ± 3 0 V Guarantee
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2SK2213-01L,
IRF 426
A2426
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