2SK1739 Search Results

2SK1739 Datasheets (5)

Part	Manufacturer	Description	Datasheet Type	PDF
2SK1739	Toshiba	RF Power MOS FET for UHF TV Broadcast Transmitter	Scan	PDF
2SK1739	Toshiba	N CHANNEL MOS TYPE (RF POWER MOS FET for UHF TV BROADCAST TRANSMITTER)	Scan	PDF
2SK1739A	Sanyo Semiconductor	Rf Power Mos Fet For Uhf Tv Broadcast Transmitter	Original	PDF
2SK1739A	Toshiba	TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOS FET for UHF TV BROADCAST TRA	Original	PDF
2SK1739AF	Toshiba	2SK1739AF - Trans MOSFET N-CH 80V 11A 5-Pin 2-22C2A	Original	PDF

2SK1739 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: 2SK1739A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK1739A RF POWER MOS FET for UHF TV BROADCAST TRANSMITTER Unit in mm Output Power : Po ≥ 90 W Min. Drain Efficiency : ηD = 50% (Typ.) Frequency : f = 770 MHz Push−Pull Structure Package	Original	PDF	2SK1739A 2-22C2A
Untitled Abstract: No abstract text available Text: 2SK1739A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK1739A RF Power MOS FET for UHF TV Broadcast Transmitter Unit in mm z Output Power : Po ≥ 90 W min. z Drain Efficiency : ηD = 50% (typ.) z Frequency : f = 770 MHz z Push−Pull Structure Package	Original	PDF	2SK1739A
2sk1739a Abstract: No abstract text available Text: 2SK1739A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK1739A RF POWER MOS FET for UHF TV BROADCAST TRANSMITTER Unit in mm Output Power : Po ≥ 90 W Min. Drain Efficiency : ηD = 50% (Typ.) Frequency : f = 770 MHz Push−Pull Structure Package	Original	PDF	2SK1739A 2-22C2A 000707EAA1 2sk1739a
2SK1739A Abstract: No abstract text available Text: 2SK1739A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK1739A RF POWER MOS FET for UHF TV BROADCAST TRANSMITTER Unit in mm z Output Power : Po ≥ 90 W Min. z Drain Efficiency : ηD = 50% (Typ.) z Frequency : f = 770 MHz z Push−Pull Structure Package	Original	PDF	2SK1739A 2SK1739A
2sk1739a Abstract: No abstract text available Text: 2SK1739A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK1739A RF POWER MOS FET for UHF TV BROADCAST TRANSMITTER Unit in mm l Output Power : Po ≥ 90 W Min. l Drain Efficiency : ηD = 50% (Typ.) l Frequency : f = 770 MHz l Push−Pull Structure Package	Original	PDF	2SK1739A 2-22C2A 000707EAA1 2sk1739a
TOSHIBA MG150N2YS40 Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40 Text: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動したり故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入	Original	PDF	050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
TOSHIBA RF Power Module S-AV24 Abstract: diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192 Text: 高周波用半導体デバイスダイオード編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動したり故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製	Original	PDF	050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 TOSHIBA RF Power Module S-AV24 diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192
tbf819 Abstract: mg50g2cl4 MG30T1AL1 GT60J101 2SD1678 ths102a MG60M1AL1 MG150N2CK1 YTF541 THS106A Text: 保守品種一覧表 [9] [ 9 ] 保守品種一覧表次の品種が保守品種となっております。新規採用は代替品種にてご検討くださいますようお願い申し上げます。保守品種 1 形名代替品種形名代替品種	Original	PDF	04AZ3 02CZ3 1SV186 1SV245 2SC2391 05AZ3 1SV204 1SV216 2SC2483 tbf819 mg50g2cl4 MG30T1AL1 GT60J101 2SD1678 ths102a MG60M1AL1 MG150N2CK1 YTF541 THS106A
3SK73 Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112 Text: 高周波用半導体デバイスパワーデバイス編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動したり故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製	Original	PDF	050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 3SK73 S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112
S-AV17 Abstract: 2SC2879 2SK3075 s-av6 quality FM TRANSMITTER 2SK1310 TOSHIBA RF Power Module S-AV17 S-AU80 2SK2854 2SK3079 Text: RF Power Devices PRODUCT GUIDE • Selection Guide for RF Power Transistors Package PO W ø 12.7 10PEP 20PEP HF 30 MHz 60PEP 2SC2290 100PEP 2SC2879 150PEP 2SC2510* * : VCC = 28 V Package PO (W) ø 12.7 6 28 VHF 175 MHz 32 80 4 2SC2782 ■ Main Characteristics of RF Power Transistors	Original	PDF	10PEP 20PEP 60PEP 2SC2290 100PEP 2SC2879 150PEP 2SC2510* 2SC2782 S-AV17 2SC2879 2SK3075 s-av6 quality FM TRANSMITTER 2SK1310 TOSHIBA RF Power Module S-AV17 S-AU80 2SK2854 2SK3079
mg75n2ys40 Abstract: 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A Text: 小信号ダイオード SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動したり故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入	Original	PDF	050106DAA1 YTF842 2SK2387 YTF441 2SK2149 YTF613 2SK2381 YTF843 YTF442 mg75n2ys40 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
BB 505 Varicap Diode Abstract: s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114 Text: Radio-Frequency Semiconductors Diodes Semiconductor Company The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent	Original	PDF	3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 S-AV26H BB 505 Varicap Diode s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114
FET K161 Abstract: S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR Text: Radio-Frequency Semiconductors Transistors, FETs, Cell Packs Semiconductor Company The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or	Original	PDF	3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 S-AV26H FET K161 S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR
FET K161 Abstract: Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923 Text: 高周波用半導体デバイストランジスタ・FET・セルパック編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動したり故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製	Original	PDF	050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 FET K161 Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923

S-AU80 Abstract: TOSHIBA RF Power Module S-AV17 toshiba s-au80 quality FM TRANSMITTER S-AV17 toshiba 2sc2879 2sc2879 equivalent 2SK3075 S-AV6 5252 F ic Text: RF Power Devices PRODUCT GUIDE • Selection Guide for RF Power Transistors Package PO W ø 12.7 10PEP 20PEP HF 30 MHz 60PEP 2SC2290 100PEP 2SC2879 150PEP 2SC2510* * : VCC = 28 V Package PO (W) ø 12.7 6 28 VHF 175 MHz 32 80 4 2SC2782 ■ Main Characteristics of RF Power Transistors	Original	PDF	10PEP 20PEP 60PEP 2SC2290 100PEP 2SC2879 150PEP 2SC2510* 2SC2782 S-AU80 TOSHIBA RF Power Module S-AV17 toshiba s-au80 quality FM TRANSMITTER S-AV17 toshiba 2sc2879 2sc2879 equivalent 2SK3075 S-AV6 5252 F ic
Untitled Abstract: No abstract text available Text: 2SK1739 T O SH IB A TOSHIBA FIELD EFFECT TRANSISTOR K I Í 1 SILICON N CHANNEL MOS TYPE 7 Í Q Unit in mm RF POWER MOS FET for UHF TV BROADCAST TRANSMITTER Output Power Po = 90W Min. 7D = 50%(Typ.) Efficiency f= 770MHz Frequency Push - Pull Structure Package	OCR Scan	PDF	2SK1739 770MHz 220pF 4700pF 200pF
mica capacitor Abstract: UHF transistor FET mica variable capacitor Mica capacitor specifications Text: TO SH IB A 2SK1739 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 739 Unit in mm RF POWER MOS FET for UHF TV BROADCAST TRANSMITTER Output Power Efficiency Frequency Push - Pull Structure 45°, P oìè 90W Min. 7 d ~ 50% (Typ.) f= 770MHz	OCR Scan	PDF	2SK1739 770MHz 961001EAA2' mica capacitor UHF transistor FET mica variable capacitor Mica capacitor specifications
mica capacitor Abstract: Silver mica capacitor 2SK1739 variable resistor 10w mica capacitors ci 7403 transistor wr2 mica variable capacitor C28T Text: TOSHIBA 2SK1739 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 739 RF PO W ER MOS FET for UHF TV BROADCAST TRANSMITTER Output Power Po^90W M in. Efficiency 7 d ~ 50% (Typ.) Frequency f = 770MHz Push-P ull Structure Package M A X IM U M RATINGS (Tc = 25°C)	OCR Scan	PDF	2SK1739 770MHz --60V, 220pF 4700pF 200pF 100juF, mica capacitor Silver mica capacitor 2SK1739 variable resistor 10w mica capacitors ci 7403 transistor wr2 mica variable capacitor C28T
mica capacitor Abstract: mica variable capacitor c2312 Silver mica capacitor variable resistor 10w mica capacitors 2SK1739A Text: TO SH IBA 2SK1739A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK1739A RF POWER MOS FET for UHF TV BROADCAST TRANSMITTER Output Power Po ^ 90 W Min. • Drain Efficiency 7D = 50% (Typ.) • Frequency f = 770 MHz Push - Pull Structure Package	OCR Scan	PDF	2SK1739A 2-22C2A mica capacitor mica variable capacitor c2312 Silver mica capacitor variable resistor 10w mica capacitors 2SK1739A

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2SK1739 Search Results

2SK1739 Datasheets (5)

2SK1739 Datasheets Context Search

Untitled

Untitled

2sk1739a

2SK1739A

2sk1739a

TOSHIBA MG150N2YS40

TOSHIBA RF Power Module S-AV24

tbf819

3SK73

S-AV17

mg75n2ys40

BB 505 Varicap Diode

FET K161

FET K161

S-AU80

Untitled

mica capacitor

mica capacitor

mica capacitor