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    2SK1119 Price and Stock

    Toshiba America Electronic Components 2SK1119(F)

    MOSFET N-CH 1000V 4A TO220AB
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    DigiKey 2SK1119(F) Tube 50
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    Toshiba America Electronic Components 2SK1119

    Electronic Component
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    ComSIT USA 2SK1119 9
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    2SK1119 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK1119 Toshiba TRANS MOSFET N-CH 1000V 4A 3TO-220AB Original PDF
    2SK1119 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    2SK1119 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK1119 Toshiba Original PDF
    2SK1119 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1119 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1119 Toshiba Field Effect Transistor Silicon N Channel MOS Type (Pi-MOS II 5) Scan PDF
    2SK1119 Toshiba Silicon N channel field effect transistor for high speed, high current switching applications, DC-DC converter and motor drive applications Scan PDF
    2SK1119(F) Toshiba 2SK1119 - MOSFET N-CH 1000V 4A TO-220AB Original PDF

    2SK1119 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SK1119 .5 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII 2SK1119 DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) High forward transfer admittance : |Yfs| = 2.0 S (typ.)


    Original     		PDF 2SK1119 O-220AB SC-46 2-10ments,

    k1119

    Abstract: No abstract text available
    Text: 2SK1119 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1119 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.)


    Original     		PDF 2SK1119 k1119

    std2n52

    Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
    Text: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232


    Original     		PDF 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 std2n52 stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent

    K1119

    Abstract: 2SK1119 2-10P1B
    Text: 2SK1119 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1119 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.)


    Original     		PDF 2SK1119 K1119 2SK1119 2-10P1B

    k1119

    Abstract: 2SK1119 2-10P1B VDD400 2SK1119-3
    Text: 2SK1119 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅡ.5 2SK1119 ○ スイッチングレギュレータ用 単位: mm z オン抵抗が低い。 : RDS ( ON ) = 3.0Ω(標準) z 順方向伝達アドミタンスが高い。


    Original     		PDF 2SK1119 O-220AB SC-46 2-10P1B VDD400 K1119 k1119 2SK1119 2-10P1B 2SK1119-3

    k1119

    Abstract: 2-10P1B 2SK1119
    Text: 2SK1119 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1119 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.)


    Original     		PDF 2SK1119 k1119 2-10P1B 2SK1119

    Untitled

    Abstract: No abstract text available
    Text: 2SK1119 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1119 DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) High forward transfer admittance : |Yfs| = 2.0 S (typ.) Low leakage current


    Original     		PDF 2SK1119 O-220ABments,

    k1119

    Abstract: 2SK1119 2-10P1B
    Text: 2SK1119 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1119 DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) High forward transfer admittance : |Yfs| = 2.0 S (typ.) Unit: mm


    Original     		PDF 2SK1119 k1119 2SK1119 2-10P1B

    K1119

    Abstract: 2SK1119 2-10P1B
    Text: 2SK1119 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1119 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.)


    Original     		PDF 2SK1119 K1119 2SK1119 2-10P1B

    2SK1119

    Abstract: 2-10P1B
    Text: 2SK1119 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1119 DC−DC Converter and Motor Drive Applications l Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) l High forward transfer admittance : |Yfs| = 2.0 S (typ.)


    Original     		PDF 2SK1119 2SK1119 2-10P1B

    SSH6N80

    Abstract: IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent
    Text: Power MOSFETs Cross Reference INDUSTY STANDARD 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1162 2SK1163 2SK1164 2SK1165 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205


    Original     		PDF 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 SSH6N80 IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF

    Toshiba TMPA8873

    Abstract: TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853
    Text: 2007-5 SYSTEM CATALOG TV Solutions Guide Digital and Analog Flat TV Organizations Contents ● ICs for Tuners…………………………………4-5 Digital Broadcasting Digital Broadcast Signal Processing DRAM ● PIF/SIF Systems…………………………………6


    Original     		PDF SCE0001C S-167 SCE0001D Toshiba TMPA8873 TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853

    2SK2056

    Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
    Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1


    Original     		PDF BCE0017B 2SK2056 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		PDF BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603

    nsi 60 jg

    Abstract: No abstract text available
    Text: T O SH IB A 2SK1119 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O S II-5 2 S K 1 119 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. • • • • INDUSTRIAL APPLICATIONS U n it in mm


    OCR Scan     		PDF 2SK1119 300/uA nsi 60 jg

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SK1119 TOSHIBA FIELD EFFECT TRANSISTOR j <; V SILICON N CHANNEL MOS TYPE tt-MOSII-5 k Hm. 1• 1■ 1■ q«T1 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS U nit in min “


    OCR Scan     		PDF 2SK1119

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR TOSHIBA TECHNICAL 2 S K 1 119 DATA SILICON N CHANNEL MOS TYPE 7T- M O S II • 5 (2SK1119) INDUSTRIAL APPLICATIONS U n it in mm HIGH SPEED, HIGH C URRENT SW ITC H IN G APPLICATIONS. DC-DC CO NVERTER A N D M O TO R DRIVE APPLICATIO N S.


    OCR Scan     		PDF 2SK1119 2SK1119) 2SK1119

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1119 Field Effect Transistor In d u s tria l A p p lic a tio n s U n it in m m Silicon N Channel MOS Type n-MOS II >3.6 ± 0 . 2 1 0 .3 M AX High Speed, High Current DC-DC Converter, w \ Relay Drive and Motor Drive Applications F e a tu re s X


    OCR Scan     		PDF 2SK1119

    2SK111

    Abstract: 24N10 2-10P1B 2SK1119
    Text: TOSHIBA 2SK1119 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSII-5 2 S K 1 119 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm • Low Drain-Source ON Resistance


    OCR Scan     		PDF 2SK1119 2SK111 24N10 2-10P1B 2SK1119

    Untitled

    Abstract: No abstract text available
    Text: 2SK1119 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSII-5 2 S K 1 119 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • • U n it in mm Low Drain-Source ON Resistance : Rd S(O N )~3.00 (Typ.)


    OCR Scan     		PDF 2SK1119 20kil)

    k1119

    Abstract: transistor k1119 power switching
    Text: FIELD EFFECT TRAN SISTO R 2SK1119 SILICON N CHANNEL MOS TYPE a:-MOSii HIGH S P EE D ,H IG H CURRENT SWITCHING A P P LIC ATIO N S. INDUSTRIA L APPLICATIO NS SWITCHING POWER SUPPLY A PP LIC ATIO NS. U n i t in mm 10.3MAI. *3.6±0.2 îï FEATURES: • Low D ra in -S o u r c e ON R e s is ta n c e :


    OCR Scan     		PDF 2SK1119 Puls700 k1119 transistor k1119 power switching

    2SK1119

    Abstract: 2-10P1B 2sk111
    Text: T O SH IB A 2SK1119 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSII-5 2 S K 1 119 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. INDUSTRIAL APPLICATIONS U nit in mm • Low Drain-Source ON Resistance


    OCR Scan     		PDF 2SK1119 2SK1119 2-10P1B 2sk111

    transistor 2SK1603

    Abstract: 2SK1603 2SK1723 2SK1118 transistor 2sk1723 MOSFET 2SK1358 Transistor Guide 2sk16 packages TYPES FOR MOSFET toshiba transistor smd code 2sk1358
    Text: H it'll Voltage M SFKTs MOSFET Features Toshiba power MOSFET lineup ranges from 60V to 1000V and from 0.5A to 60A. All devices are enhancement types, which means the transistor is normally off. Our wide variety of different packages offers choices for all


    OCR Scan     		PDF OT-89, T0-220 2SK1488 2SK1865SM 2SK1531 2SK1745 2SK2057 2SK1544 O-220AB 2SK1723 transistor 2SK1603 2SK1603 2SK1118 transistor 2sk1723 MOSFET 2SK1358 Transistor Guide 2sk16 packages TYPES FOR MOSFET toshiba transistor smd code 2sk1358