2SJ189 Search Results

2SJ189 Datasheets (9)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
2SJ189		Sanyo Semiconductor	Ultrahigh-speed switching		Original	PDF
2SJ189		Unknown	P-Channel Power MOSFET		Scan	PDF
2SJ189		Unknown	FET Data Book		Scan	PDF
2SJ189		Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)		Short Form	PDF
2SJ189		Sanyo Semiconductor	Ultra High Speed Switching MOSFET		Scan	PDF
2SJ189		Sanyo Semiconductor	TP Type / MP Type Transistors		Scan	PDF
2SJ189FA		Unknown	P-Channel Power MOSFET		Scan	PDF
2SJ189-FA		Unknown	SMD, High Speed Power Switch, 30V 4A 30W, MOS-FET P-Channel enhanced		Scan	PDF
2SJ189-FA		Unknown	SMD, High Speed Power Switch, 30V 4A 30W, MOS-FET P-Channel enhanced		Scan	PDF

2SJ189 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SJ189 Abstract: No abstract text available Text: Ordering number:EN3762A P-Channel Silicon MOSFET 2SJ189 Ultrahigh-Speed Switching Applications Features • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. Package Dimensions unit:mm 2083B [2SJ189] 2.3 1.5 6.5 5.0 0.5 5.5 7.0 4 1.2 7.5	Original	PDF	EN3762A 2SJ189 2083B 2SJ189] 2092B 2SJ189
2SJ189 Abstract: ITR00020 ITR00021 Text: 注文コード No.N 3 7 6 2 A 2SJ189 No. 3 7 6 2 A 51899 半導体ニューズ No.3762 とさしかえてください。 2SJ189 特長 P チャネル MOS 形シリコン電界効果トランジスタ超高速スイッチング用・低オン抵抗。・超高速スイッチング。	Original	PDF	2SJ189 --15V --10V ITR00024 ITR00026 ITR00027 ITR00028 2SJ189 ITR00020 ITR00021
2SJ189 Abstract: No abstract text available Text: Ordering number:EN3762A P-Channel Silicon MOSFET 2SJ189 Ultrahigh-Speed Switching Applications Features • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. Package Dimensions unit:mm 2083B [2SJ189] 2.3 1.5 6.5 5.0 0.5 5.5 7.0 4 1.2 7.5	Original	PDF	EN3762A 2SJ189 2083B 2SJ189] 2092B 2SJ189
2sj111 Abstract: 2SJ131 2sj110 2SJ112 2sj155 2SJ124 transistor 2sj162 2SJ109 2SJ113 2SJ122 Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) ID Pd/Pch Tj/Tch min 2SJ101 2SJ102 2SJ103 2SJ104 2SJ105 2SJ106 2SJ107 2SJ108 2SJ109 2SJ110 2SJ111 2SJ112 2SJ113 2SJ114 2SJ115 2SJ116 2SJ117 2SJ118	Original	PDF	2SJ101 2SJ102 2SJ103 2SJ104 2SJ105 2SJ106 2SJ107 2SJ108 2SJ109 2SJ110 2sj111 2SJ131 2sj110 2SJ112 2sj155 2SJ124 transistor 2sj162 2SJ109 2SJ113 2SJ122
2sk3436 Abstract: 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744 Text: Ordering number : E I 0 1 3 8 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis	Original	PDF	TND023F FX504 CPH5504 MCH5805 FX505 HPA72R TND024F FX506 MCH3301 TND024MP 2sk3436 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744
2sk3436 Abstract: 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970 Text: 注文コード No. I 0 1 3 8 ディスクリートデバイス製品保守品・廃止品に関するお知らせいつも半導体製品をご使用いただきまして誠にありがとうございます。このたび、下記三洋半導体製品を保守品または廃止品と致します。	Original	PDF	40610HKPC TC-00002289 CPH5815 MCH5815 MCH6629 MCH6649 CPH6610 CPH6614 SCH1411 SCH1436 2sk3436 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970
Untitled Abstract: No abstract text available Text: 2SJ189 • ♦ 2083A 2092A LD L o w D riv e S e rie s V DSs= 3 0 V P Channel Power M OSFET 3762A F e a tu re s •Low ON resistance • Very high-speed switching • Low-voltage drive A b so lu te M axim um R a tin g s at Ta = 25°C Drain to Source Voltage	OCR Scan	PDF	2SJ189 --10V, 42893TH/N1292MH
1h23 Abstract: 2SJ189 P CHANNEL POWER MOSFET Text: 2SJ189 2083A 2092A LD L o w D rive S eries VDSs = 3 0 V P Channel Power MOSFET 3762A F e a tu re s • Low ON resistance •Very high-speed switching • Low-voltage drive A b so lu te M axim um R atin g s at T a = 25°C D rain to Source Voltage V d ss	OCR Scan	PDF	2SJ189 3762a 10//s, 7Ti707b 1h23 2SJ189 P CHANNEL POWER MOSFET
2SJ469 Abstract: No abstract text available Text: 1 VDSS = 20V 30V, P-channel Electrical characteristics atTa =25 C Absolute maximum ratings at Ta =25°C Type No. Package Voss m 2SJ284 W CP •o W 0.3 2SJ187 2SJ287 VG8S ±15 2SJ416 m «5 VGS o mtntomax W 0.25+ 1.0 0.5 PCP Po* 1.0 to 2.0 3.5 120 1.0 to 2.5	OCR Scan	PDF	2SJ284 2SJ187 2SJ287 2SJ416 2SJ188 O-220 O-220ML 2SJ189 2SJ417 2SJ418 2SJ469
TO-32-070 Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124 Text: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)	OCR Scan	PDF	T0220ML TO-32-070 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
2SJ18 Abstract: 2SJ174 HA 1350S 2S1189 2S119 2sj196 mos-mcs 2SJ170 2SJ171 2SJ172 Text: - 22 - m % ft € m & m ss f t t % * K V ± * ft Ê (V) ft * tt ft (A) P d /P c h (W) Ig s s (max) (A) Vg s (V) % M (min) (max) Vd s (A) (V) (A) ft tÈ (Ta=25‘ C) (min) (max) V d s (V) (V) (V) Id (A) (min) (S) Vds (V) Id (A) 2SJ170 0 SW-Reg, DDC MOS	OCR Scan	PDF	2SJ170 2SJ171 2SJ172 2SJ173 2SJ174 M-30V 2SJ191 210nstyp 2SJ192 2SJ193 2SJ18 HA 1350S 2S1189 2S119 2sj196 mos-mcs
K1412 Abstract: K1413 K1464 K923A 2sk1412 to220ml AK1052 AK924 2SJ193 2SK1460 Text: PE5L 89-10 SANYO SEMICONDUCTOR CORP 32E D 7 ci c17G7ti □Q0ci 2 ci l a T '3 ? '0 / ííS^V:í¿^^^i¿^<#rA‘ííf'A,íí'í»ltlKi-niS .040450’ vJ\|tV Sanyo Power MOSFETs SANYO Electric Co.,Ltd. Semiconductor Division MKM Series 8 0 0 4 -9 2 9 9 SENICOiiilUCTOR CORP	OCR Scan	PDF	17G7ti 2SK1467 2SK14691 2SK1470 --2SK1471 2SK1472 2SK1473 2SK1474 2SK1475 1800m K1412 K1413 K1464 K923A 2sk1412 to220ml AK1052 AK924 2SJ193 2SK1460
2SJ189 Abstract: No abstract text available Text: Ordering num ber: E N 3 7 6 2 A 2SJ 189 NÒ.3762À P-Channel MOS Silicon FET Very High-Speed Switching Applications F eatu re s • Low ON resistance • Very high-speed switching • Low-voltage drive A bsolute M axim um R atings at T a = 25°C Drain to Source Voltage	OCR Scan	PDF	EN3762A 2SJ189
Untitled Abstract: No abstract text available Text: Power MOSFETs Electrical characteristic» T. » 31 °Q AtooMe mKknum ratings . Owto» _ - Pwtogi Appflcaflons m _ ' _ Voss » _ Voss w t# w 2SJ284* CP Very high-speed switch 30 ±15 0.3 2SJ285* CP Very high-speed switch 60 ±15 0.25 2SJ286* CP Very high-speed switch	OCR Scan	PDF	2SJ284* 2SJ286* 2SK1847 2SJ285* 2SJ233 2SK1731 2SK1732 2SK1734 2SK1735 DD14SSD

2SJ468 Abstract: 2SJ191 2SJ271 2SJ260 2SJ189 2SJ192 2SJ194 2SJ195 2SJ281 2SJ336 Text: Continued from previous page Electrical characteristics Ta = 25 V Absolute maximum ratings Type No. Package type Applications Rds(<w) @ Id •VGS VOSS (V) VGSS (V) ID (A) PD (W) Tdi OC) \|Yfi\|@ VDS ■ID RDS(mi) max(Q) Id (A) VGS (V) JA VDS (V) (A) 2S JI8 8	OCR Scan	PDF	2SJI88 2SJ189 2SJ191 2SJ192 2SJ194 2SJ195 2SJ253 T0220 2SJ260 2SJ468 2SJ271 2SJ281 2SJ336
sb30-03p Abstract: to-40-070 Text: Application Example Input Q- ~ T ~ 4A £ KTs -tk Ur TfT -4 n c ko F L }ci> T o, • Electrical Connections C1 C2 FX507 FX508 ■ Device Lineup ♦ Inverter Output Transistors Inverter Block (V) w 2 1 0.7 2 <W) FP211 50 0.8’ 100 FP216 PCP5 TS6472	OCR Scan	PDF	FX507 FX508 FP211 FP216 TS6472 2SD1815 250mm2 750mm2 sb30-03p to-40-070
2SK2153 Abstract: 2SJ332S Text: • Device Lineup ♦ 2.5V-Drive Power MOSFETs Absolute maximum ratings Ta = 25DC Type No, Package 2SJ381 PCP 2SJ382 TP-FA 2SJ383 2SJ419 2SK2317 2SK2318 FW201 ±10 2 ±12 r r rD (W) lytsi typ Ciss typ (S) (pF) 3.5 400/700 280/400 2.4 170 240/380 155/220 ^	OCR Scan	PDF	2SJ381 2SJ382 2SJ383 2SJ419 2SJ42Q 2SK2316 2SK2317 2SK2318 2SK2440 2SK2441 2SK2153 2SJ332S