2SD1525
Abstract: 2-21F1A 316tc
Text: 2SD1525 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD1525 High Current Switching Applications • Unit: mm High collector current: IC = 30 A • High DC current gain: hFE = 1000 (min) (VCE = 5 V, IC = 20 A) • Monolithic construction with built-in base-emitter shunt resistor.
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2SD1525
2SD1525
2-21F1A
316tc
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2sd1525 toshiba
Abstract: No abstract text available
Text: 2SD1525 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD1525 High Current Switching Applications • Unit: mm High collector current: IC = 30 A • High DC current gain: hFE = 1000 (min) (VCE = 5 V, IC = 20 A) • Monolithic construction with built-in base-emitter shunt resistor.
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2SD1525
2sd1525 toshiba
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2SD1525
Abstract: 2-21F1A
Text: 2SD1525 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD1525 High Current Switching Applications • Unit: mm High collector current: IC = 30 A • High DC current gain: hFE = 1000 (min) (VCE = 5 V, IC = 20 A) • Monolithic construction with built-in base-emitter shunt resistor.
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2SD1525
2SD1525
2-21F1A
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Untitled
Abstract: No abstract text available
Text: 2SD1525 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD1525 High Current Switching Applications • Unit: mm High collector current: IC = 30 A • High DC current gain: hFE = 1000 (min) (VCE = 5 V, IC = 20 A) • Monolithic construction with built-in base-emitter shunt resistor.
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2SD1525
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2sd1525 toshiba
Abstract: No abstract text available
Text: 2SD1525 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD1525 High Current Switching Applications • Unit: mm High collector current: IC = 30 A • High DC current gain: hFE = 1000 (min) (VCE = 5 V, IC = 20 A) • Monolithic construction with built-in base-emitter shunt resistor.
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2SD1525
2-21F1A
2sd1525 toshiba
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2SD1525
Abstract: 2-21F1A MS-524
Text: 2SD1525 シリコンNPN三重拡散形 ダーリントン接続 東芝トランジスタ 2SD1525 通 信 工 業 用 ○ 大電力スイッチング用 • 単位: mm 許容コレクタ電流が大きい。: IC = 30 A • 直流電流増幅率が高い。
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2SD1525
2-21F1A
2SD1525
2-21F1A
MS-524
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2SD1525
Abstract: 2-21F1A
Text: 2SD1525 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD1525 High Current Switching Applications • Unit: mm High collector current: IC = 30 A · High DC current gain: hFE = 1000 (min) (VCE = 5 V, IC = 20 A) · Monolithic construction with built-in base-emitter shunt resistor.
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2SD1525
2SD1525
2-21F1A
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k2645
Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt
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MK135
MK136
MK137
MK138
MK139
MK140
Mk142
MK145
MK155
157kr
k2645
k4005
U664B
mosfet k4005
MB8719
transistor mosfet k4004
SN16880N
stk5392
STR451
BC417
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GT30F131
Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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SCE0004L
TTC4116*
2SC4118
TTA1586*
2SA1588
2SC4117
2SA1587
2SC5233
2SC4738
2SA1832
GT30F131
GT30F124
TK18A60V
smd m5 transistor 6-pin
SMD TRANSISTOR H2A NPN
GT50N322
MARKING SMD PNP TRANSISTOR h2a
GT30J124
*30f124
TPCP8R01
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IGBT GT30F124
Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ
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SCJ0004R
SC-43)
2SC1815
2SC732TM
2SC1959
2SA1015
2SC2240
2SA970
2SC1815
2SA1015
IGBT GT30F124
IGBT GT30J124
GT30F124
GT30J124
GT50N322
tk25e06k3
TPCP8R01
TK12A10K3
GT30G124
2SK3075
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2sC5200, 2SA1943
Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
Text: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current
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BCE0016D
2sC5200, 2SA1943
2SA1941 equivalent
2SC5353 equivalent
2sc5198 equivalent
amplifier circuit using 2sa1943 and 2sc5200
2SC2383 equivalent
tpcp8l01
2SA1962 equivalent
2SC4793 2sa1837
2sA1013 equivalent
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smd transistor h2a
Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output
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BCE0016C
E-28831
BCE0016D
smd transistor h2a
SMD TRANSISTOR H2A NPN
transistor smd H2A
2sa1943 amplifier circuit diagram
TPCP8L01
2sC5200, 2SA1943
H2A transistor SMD
2sc5200 power amplifiers diagram
MARKING SMD PNP TRANSISTOR h2a
SMD H2A
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GT30F124
Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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2010/9SCE0004K
SC-43)
2SC1815
700the
GT30F124
TPCP8R01
GT30J124
JAPANESE 2SC TRANSISTOR 2010
smd transistor h2a
smd marking 8L01
tk25e06k3
GT45F122
gt30g124
GT30F123
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SD1525 2 S D 1 525 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE D ARLING TO N HIGH CURRENT SW ITCHING APPLICATIONS Unit in mm • • • High Collector Current : Iq = 30A High DC Current Gain : hjrE(l) = 1000 (Min.) Monolithic Construction with Built-In Base-Emitter Shunt
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2SD1525
20-5M
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Untitled
Abstract: No abstract text available
Text: T O S H IB A 2SD1525 TOSHIBA TRANSISTOR n SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON n mmr mmr s i m mm s h t HIGH CURRENT SWITCHING APPLICATIONS • • • Unit in mm High Collector Current : I q —30A High DC Current Gain : h;pE(i) = 1000 (Min.) Monolithic Construction with Built-In Base-Emitter Shunt
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2SD1525
--30A
50V9o
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2-21F1A
Abstract: 2SD1525 2SD152 2SD1525(F)
Text: 2SD1525 TOSHIBA 2 S D 1 525 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE D AR LIN G TO N HIGH CURRENT SW ITCHING APPLICATIONS Unit in mm High Collector Current : l£ = 30A High DC Current Gain : hjpg (i) = 1000 (Min.) Monolithic Construction with Built-In Base-Emitter Shunt
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2SD1525
20-5M
2-21F1A
--10A,
0-01a>
2SD1525
2SD152
2SD1525(F)
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2-21F1A
Abstract: 2SD1525
Text: TO SH IBA 2SD1525 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2 S D 1 525 HIGH CURRENT SWITCHING APPLICATIONS High Collector Current : l0 = 3OA High DC Current Gain : hjpg (i) = 1000 (Min.) Monolithic Construction with Built-In Base-Emitter Shunt
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2SD1525
2-21F1A
2SD1525
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2sd1525 toshiba
Abstract: No abstract text available
Text: SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER 2SD1525 INDUSTRIAL APPLICATION Unit in nan HIGH CURRENT SWITCHING APPLICATIONS. FEATURES: . High Collector Current : Ic=30A . High DC Current Gain : hFE=1000(Min.) (Vc e = 5V, Ic=20A) . Monolithic Construction with Built-In Base-Emitter
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2SD1525
2sd1525 toshiba
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2s01525
Abstract: No abstract text available
Text: SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER 2SD1525 INDUSTRIAL APPLICATION HIGH CURRENT SWITCHING APPLICATIONS. Unit in mm FEATURES: 2 0 .5 MAX. . High Collector Current : Ic= 30A . High DC Current Gain : hFE=1000(Min.) (VCe=5V, IC=20A) . Monolithic Construction with Built-In Base-Emitter
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2SD1525
2s01525
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Transistor 2SA 2SB 2SC 2SD
Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Text: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)
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O-126
O-126
T0-220AB,
O-220
2SC4544
2SC4448
2SC3612
2BC4201
Transistor 2SA 2SB 2SC 2SD
S-AU27M
S2000A inverter
P4005
S-AV21H
S-AU27
3182N
2sb 834 transistor
Transistor 2SC4288A
Drive IC 2SC3346
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2SD157
Abstract: 2SD2238 2SC3692 2SD1833 2SD1277 2SD1577 2sd1590 2SC1847 2SC3258 2SD2239
Text: - 2 40 - tt m % Type No. 2SD 1410 / M 2SD 1411 M ¥ 2SD 1412 2SD 1413*— 2SD 1414 ^ 2SD 1415 ^ Manuf. 2SD 1420 2SD 1421 2SD 1423A 2SD 1424 s m NEC S ±L HITACHI 2SD1141 K H dr ìli FU JITSU fâ T MATSUSHITA 2SD1833 2SC3692 2SD1271 2SD1833 2SC3144 2SD1589
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2SD1592
2SD1141
2SD1446
2SD1237L
2SC3692
2SD1271A
2SD1833
2SD1668
2SD1271
2SD157
2SD2238
2SC3692
2SD1833
2SD1277
2SD1577
2sd1590
2SC1847
2SC3258
2SD2239
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15J102
Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811
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2SA949U50VI
2AC2229
2SA1145U50V)
2SC2705(
2SC2230
2SA817A
2SC1627A
2SA1811
2SC4707
2SA965
15J102
Transistor 2SC4288A
Transistor 2SA 2SB 2SC 2SD
Drive IC 2SC3346
2sa 102 transistor
transistor 2SA 101
50J301
02SC5030
T15J103
Driver IC 2SC3346
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2sC5200, 2SA1943, 2sc5198
Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
Text: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428
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2SA817A
2SA940
2SA949
2SA965
2SA966
2SA1012
2SA1013
2SA1020
2SA1145
2SA1160
2sC5200, 2SA1943, 2sc5198
GTI5Q101
2sc5039
2SC4532
2SD2088
2SC3303
2sC5200, 2SA1943
2SA1803
2sc4408
GT10G102
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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