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    2SC557 Search Results

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    2SC557 Price and Stock

    Toshiba America Electronic Components 2SC5570

    TRANSISTOR,BJT,NPN,800V V(BR)CEO,28A I(C),TO-264AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SC5570 712
    • 1 $14.295
    • 10 $14.295
    • 100 $14.295
    • 1000 $7.1475
    • 10000 $7.1475
    Buy Now

    Panasonic Electronic Components 2SC5573

    PART NUMBER ONLY
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SC5573 47
    • 1 $1.35
    • 10 $1.125
    • 100 $0.81
    • 1000 $0.81
    • 10000 $0.81
    Buy Now

    2SC557 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC557 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC557 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC557 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC557 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC557 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC5570 Toshiba Silicon NPN triple diffused MESA type transistor for horisontal deflection output for super high resolution, display, color TV, high speed switching applications Scan PDF
    2SC5572 Panasonic Horizontal Deflection Output Transistor Original PDF
    2SC5572 Panasonic Horizontal Deflection Output Transistor Scan PDF
    2SC5574 ROHM Power Transistor (80V, 4A) Original PDF
    2SC5574 ROHM Power Transistor (80V, 4A) Scan PDF
    2SC5575 ROHM High-voltage Switching Transisitor (Power Supply) (120V, 7A) Original PDF
    2SC5575 ROHM High-voltage Switching Transisitor (Power Supply) (120V, 7A) Scan PDF
    2SC5576 ROHM TRANS DARLINGTON NPN 70V 4A 3TO-220FN Original PDF
    2SC5576 ROHM Medium Power Transistor (Motor or Relay drive) (60+10V, 4A) Scan PDF
    2SC5577 Sanyo Semiconductor Ultrahigh-resolution display horizontal deflection output driver Original PDF
    2sc5578 Sanyo Semiconductor Original PDF

    2SC557 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC5570

    Abstract: 2SC5570 equivalent 2SC557
    Text: 2SC5570 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5570 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage Unit: mm : VCBO = 1700 V Low Saturation Voltage : VCE sat = 3 V (Max.)


    Original
    PDF 2SC5570 2SC5570 2SC5570 equivalent 2SC557

    IC4a

    Abstract: Transistor 5503 2sc5572 VCes 1500V
    Text: Horizontal Deflection Output Transistor 2SC5572 • Absolute Maximum Ratings Unit:mm Collector to emitter voltage VCES 1500 V Emitter to base voltage VEBO 7 V Peak collector current ICP 12*3 A Collector current IC 6 A Base current IB 3 A Collector power dissipation


    Original
    PDF 2SC5572 500mA IC4a Transistor 5503 2sc5572 VCes 1500V

    2SC5570

    Abstract: 2SC557 transistor 2SC5570
    Text: 2SC5570 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5570 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS l High Voltage Unit: mm : VCBO = 1700 V l Low Saturation Voltage : VCE sat = 3 V (Max.)


    Original
    PDF 2SC5570 2SC5570 2SC557 transistor 2SC5570

    2sc5570

    Abstract: transistor 2sc5570
    Text: 2SC5570 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5570 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION Unit: mm DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage: VCBO = 1700 V Low Saturation Voltage: VCE sat = 3 V (Max.)


    Original
    PDF 2SC5570 2-21F2A 2sc5570 transistor 2sc5570

    2SC5578

    Abstract: No abstract text available
    Text: Ordering number:ENN6297 NPN Triple Diffused Planar Silicon Transistor 2SC5578 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed. · High breakdown voltage VCBO=1600V . · High reliability (Adoption of HVP process).


    Original
    PDF ENN6297 2SC5578 2048B 2SC5578] 2SC5578

    diode circuit diagram

    Abstract: 2SC5576 power transisitors
    Text: 2SC5576 Transisitors Medium Power Transistor Motor or Relay drive (60±10V, 4A) 2SC5576 !Features 1) Built-in zener diode between collector and base. 2) Strong protection against reverse power surges due to "L" loads. 3) Built-in resistor between base and emitter.


    Original
    PDF 2SC5576 30MHz diode circuit diagram 2SC5576 power transisitors

    2SA2017

    Abstract: 2SC5574
    Text: 2SC5574 Transistors Power Transistor 80V, 4A 2SC5574 !External dimensions (Units : mm) !Features 1) Low saturation voltage. (Typ. VCE(sat) = 0.3V at IC / IB =2 / 0.2A) 2) Excellent DC current gain characteristics. 3) Pc = 30W (Tc = 25°C) 4) Wide SOA (safe operating area).


    Original
    PDF 2SC5574 2SA2017. O-220FN 2SA2017 2SC5574

    2SC5577

    Abstract: No abstract text available
    Text: Ordering number:ENN6281 NPN Triple Diffused Planar Silicon Transistor 2SC5577 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process).


    Original
    PDF ENN6281 2SC5577 100ns 2048B 2SC5577] 2SC5577

    2sc5578

    Abstract: No abstract text available
    Text: Ordering number:ENN6297 NPN Triple Diffused Planar Silicon Transistor 2SC5578 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed. · High breakdown voltage VCBO=1600V . · High reliability (Adoption of HVP process).


    Original
    PDF ENN6297 2SC5578 2048B 2SC5578] 2sc5578

    2SC5577

    Abstract: 10A800
    Text: Ordering number:ENN6281 NPN Triple Diffused Planar Silicon Transistor 2SC5577 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process).


    Original
    PDF ENN6281 2SC5577 100ns 2048B 2SC5577] 2SC5577 10A800

    2SC5570

    Abstract: transistor 2SC5570
    Text: 2SC5570 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5570 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION Unit: mm DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS z High Voltage: VCBO = 1700 V z Low Saturation Voltage: VCE sat = 3 V (Max.)


    Original
    PDF 2SC5570 2-21F2A 2SC5570 transistor 2SC5570

    2SC5570

    Abstract: No abstract text available
    Text: 2SC5570 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5570 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS Unit: mm z High Voltage: VCBO = 1700 V z Low Saturation Voltage: VCE sat = 3 V (Max.)


    Original
    PDF 2SC5570 2-21F2A 2SC5570

    Power Transisitor 100V 2A

    Abstract: 2SC5575 Vceo 100V Ic 0.5A
    Text: 2SC5575 Transistors High-voltage Switching Transisitor Power Supply (120V, 7A) 2SC5575 !Features 1) Low VCE(sat). (Typ. 0.17V at IC / IB = 5 / 0.5A) 2) Fast switching. (tf : Typ. 0.18µs at IC = 5A) 3) Wide SOA. (safe operating area) !External dimensions (Units : mm)


    Original
    PDF 2SC5575 100ms) Power Transisitor 100V 2A 2SC5575 Vceo 100V Ic 0.5A

    2SA2017

    Abstract: 2SC5574
    Text: 2SA2017 Transistors Power Transistor −80V, −4A 2SA2017 !Features 1) Low VCE(sat). (Typ. –0.3V at IC/IB = −2 / −0.2A) 2) Excellent DC current gain characteristics. 3) Pc = 30W (Tc = 25°C) 4) Wide SOA (safe operating area). 5) Complements the 2SC5574.


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    PDF 2SA2017 2SC5574. 2SA2017 2SC5574

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SC5570 TO SH IB A TRA N SISTO R SILICON NPN TRIPLE D IFFU SED M ESA TYPE 2SC5570 H O RIZO N TAL D EFLECTIO N O U TPU T FO R SUPER HIGH RESO LU TIO N CHARACTERISTIC SYMBOL Collector Cut-off Current !CBO Emitter Cut-off Current Ie b o Colleetor-Emitter Breakdown


    OCR Scan
    PDF 2SC5570

    2SC5570

    Abstract: 22a ic
    Text: TOSHIBA 2SC5570 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED M ESA TYPE 2SC5570 Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY, COLOR TV 20.5MAX. HIGH SPEED SWITCHING APPLICATIONS • • • High Voltage Low Saturation Voltage


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    PDF 2SC5570 2SC5570 22a ic

    Power Transisitor 100V 2A

    Abstract: 2SC5575 T0220FN 017V
    Text: 2SC5575 Transistors High-voltage Switching Transisitor Power Supply (120V, 7A) 2SC5575 •Features •External dimensions (Units: mm) 1) Low VcBssi) (Typ. 0.17V at Ic / I b = 5 / 0.5A) 2) Fast switching, (tf: Typ. 0.18|iS at Ic = 5A) 3) Wide SOA. (safe operating area)


    OCR Scan
    PDF 2SC5575 100ms) 200ji Power Transisitor 100V 2A 2SC5575 T0220FN 017V

    2SC5576

    Abstract: No abstract text available
    Text: 2SC5576 Medium Power Transistor Motor or Relay drive (60±10V, 4A) 2SC5576 •Features 1) Built-in zener diode between collector and base. 2) Strong protection against reverse power surges due to


    OCR Scan
    PDF 2SC5576 100ms 30MHz 2SC5576

    2Sc5570

    Abstract: 0924 -h 1
    Text: TOSHIBA 2SC5570 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED M ESA TYPE 2SC5570 Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS VCBO = 1700V VCE sat = 3V (Max.) tf (2) —0.1/¿s (Typ.)


    OCR Scan
    PDF 2SC5570 2Sc5570 0924 -h 1

    2SC557

    Abstract: 2SA2017 2SC5574
    Text: 2SC5574 Transistors_ Power Transistor 80V, 4A 2SC5574 •External dimensions (Units : mm) •Features 1) Low saturation voltage. (Typ. VcE(sat) = 0.3V at Ic / I b =2 / 0.2A) 2) Excellent DC current gain characteristics. 3) Pc = 30W (Tc = 25°C)


    OCR Scan
    PDF 2SC5574 2SA2017. O-220FN 2SC557 2SA2017 2SC5574

    diode v3e

    Abstract: 2sc5572
    Text: Panasonic Horizontal Deflection Output Transistor 2SC5572 • Absolute Maximum Ratings Unitami Parameter Rating Symbol Unit ^.0 s3 3 C 3.2rC .1 Collector to base voltage VCBO 1500 V Collector to emitter voltage vets 1500 V Emitter to base voltage YESO 7 V


    OCR Scan
    PDF 2SC5572 500mA 10VlC diode v3e 2sc5572

    2SA2017

    Abstract: 2SC5574 Gan transistor
    Text: 2SA2017 Transistors Power Transistor -80V, -4A 2SA2017 ! Features 1 ) Low VcE(sat). (Typ. -0 .3 V at Ic / I b = - 2 / -0.2A) 2) Excellent DC current gain characteristics. 3) Pc = 30W (Te = 25 °C) 4) Wide SOA (safe operating area). 5) Complements the 2SC5574.


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    PDF 2SA2017 2SC5574. O-220FN 2SA2017 2SC5574 Gan transistor

    b1375

    Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
    Text: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39


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    PDF 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S b1375 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1

    2SK 150A

    Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
    Text: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015


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    PDF 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2SK 150A mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N