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    2SC5318 Search Results

    2SC5318 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC5318 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC5318 Unknown NPN Transistor Scan PDF
    2SC5318 Toshiba Transistor Silicon NPN Epitaxial Planar Type Scan PDF
    2SC5318 Toshiba NPN EPITAXIAL PLANAR TYPE (VHF~UHF VAND LOW NOISE AMPLIFIER APPLICATIONS) Scan PDF

    2SC5318 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK3075 equivalent

    Abstract: 10 ghz transistor 2SK3078 MT3S04T 2SC5066 MT6P03AE MT6P06E 3SK320 24lu1 transistor 2SC5066
    Text: High-Frequency Devices for Mobile Communications PRODUCT GUIDE 800 MHz Band Analog and Digital Cellular High-Frequency Block Diagram Ant. RF Amp Mixer RX IF detection Prescaler VCO 1 900 MHz Buff Amp Buff Amp OSC (1) Tuning DUP Prescaler Buff Amp VCO (2) 100 MHz


    Original
    PDF 2SC5065 2SC5085 2SC5090 2SC5095 MT3S06U MT3S07U 2SC5066 2SC5086 2SC5091 2SC5096 2SK3075 equivalent 10 ghz transistor 2SK3078 MT3S04T 2SC5066 MT6P03AE MT6P06E 3SK320 24lu1 transistor 2SC5066

    2SC5318

    Abstract: No abstract text available
    Text: TO SH IBA TENTATIVE 2SC5318 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5318 Unit in mm VH F-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16 GHz series + 0.2 2.9-0.3 -fr • Low Noise Figure • High Gain : NF = 1.3 dB (f = 2 GHz) : Ga = 11.5 dB (f = 2 GHz)


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    PDF 2SC5318 2SC5318

    2SC5318

    Abstract: No abstract text available
    Text: T O S H IB A TENTATIVE 2SC5318 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5318 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16 GHz series + 0.2 2 .9 -0 .3 -fr • Low Noise Figure • High Gain : NF = 1.3 dB (f = 2 GHz)


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    PDF 2SC5318 2SC5318

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE 2SC5318 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5318 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS U nit in mm + 0.2 • Low Noise Figure 2.9-0.3 : N F = 1.3dB f=2GHz II • High Gain :G a —11.5dB (f—2GHz) MAXIMUM RATINGS (Ta = 25°C)


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    PDF 2SC5318

    2SC5318

    Abstract: BB34
    Text: 2SC5318 TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5318 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain + 0.2 :NF = 1.3dB f=2GHz : Ga = 11.5dB (f=2GHz) 2 .9 -0 .3 -e MAXIMUM RATINGS (Ta = 25°C)


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    PDF 2SC5318 2SC5318 BB34

    Untitled

    Abstract: No abstract text available
    Text: 2SC5318 TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5318 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain + 0.2 :NF = 1.3dB f=2GHz :Ga = 11.5dB (f=2GHz) 2 .9 -0 .3 -fr MAXIMUM RATINGS (Ta = 25°C)


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    PDF 2SC5318

    Untitled

    Abstract: No abstract text available
    Text: 2SC5318 TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5318 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain :NF = 1.3dB f=2GHz : Ga= 11.5dB (f=2GHz) s + 0.2 2 .9 - 0 .3 MAXIMUM RATINGS (Ta = 25°C)


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    PDF 2SC5318

    2SC5318

    Abstract: VHF-UHF Band Low Noise Amplifier
    Text: 2SC5318 TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5318 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain + 0.2 :NF = 1.3dB f=2GHz : Ga = 11.5dB (f=2GHz) 2 .9 -0 .3 -e MAXIMUM RATINGS (Ta = 25°C)


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    PDF 2SC5318 2SC5318 VHF-UHF Band Low Noise Amplifier

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


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    PDF T258-OMI FAX06 2SC144 2SD466 2sc5266