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    Toshiba America Electronic Components 2SC5199-O(Q)

    Trans GP BJT NPN 160V 12A 120000mW 3-Pin(3+Tab) TO-3PL
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    Quest Components 2SC5199-O(Q) 200
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    2SC5199 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC5199 Toshiba High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: TO-3P(L); Number Of Pins: 3; Viewing Angle: taping unavailable; Publication Class: High Frequency Switching Power Transistor; Application Scope: output(80W); Part Number: 2SA1942 Original PDF
    2SC5199 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC5199 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC5199 Toshiba Silicon NPN transistor for power amplifier applications. Recommended for 80W high fidelity audio frequency amplifier output stage. Scan PDF
    2SC5199 Toshiba TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE Scan PDF
    2SC5199 Toshiba NPN Transistor Scan PDF
    2SC5199-O Toshiba 2SC5199 - TRANSISTOR 12 A, 160 V, NPN, Si, POWER TRANSISTOR, 2-21F1A, 3 PIN, BIP General Purpose Power Original PDF
    2SC5199-R Toshiba 2SC5199 - TRANSISTOR 12 A, 160 V, NPN, Si, POWER TRANSISTOR, 2-21F1A, 3 PIN, BIP General Purpose Power Original PDF

    2SC5199 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2-21F1A

    Abstract: 2SA1942 2SC5199
    Text: 2SA1942 東芝トランジスタ シリコンPNP三重拡散形 2SA1942 ○ 電力増幅用 単位: mm • 高耐圧です。: VCEO = −160 V 最小 • 2SC5199 とコンプリメンタリになります。 • 80 W ハイファイオーディオアンプ出力段に最適です。


    Original     		PDF 2SA1942 2SC5199 2-21F1A 20070701-JA 2-21F1A 2SA1942 2SC5199

    Untitled

    Abstract: No abstract text available
    Text: 2SA1942 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1942 Power Amplifier Applications Unit: mm • High breakdown voltage: V CEO = −160 V min • Complementary to 2SC5199 • Recommended for 80-W high-fidelity audio frequency amplifier output stage


    Original     		PDF 2SA1942 2SC5199

    2-21F1A

    Abstract: 2SA1942 2SC5199
    Text: 2SA1942 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1942 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −160 V min • Complementary to 2SC5199 • Recommended for 80-W high-fidelity audio frequency amplifier output stage


    Original     		PDF 2SA1942 2SC5199 2-21F1A 2SA1942 2SC5199

    Untitled

    Abstract: No abstract text available
    Text: 2SA1942 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1942 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −160 V min • Complementary to 2SC5199 • Recommended for 80-W high-fidelity audio frequency amplifier output stage


    Original     		PDF 2SA1942 2SC5199

    2SA1942

    Abstract: 2SC5199
    Text: Inchange Semiconductor Product Specification 2SA1942 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PL package ・Complement to type 2SC5199 APPLICATIONS ・Power amplifier applications ・Recommended for 80W high fidelity audio frequency amplifier output stage


    Original     		PDF 2SA1942 2SC5199 2SA1942 2SC5199

    2sa1942

    Abstract: 2SC5199
    Text: SavantIC Semiconductor Product Specification 2SA1942 Silicon PNP Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SC5199 APPLICATIONS ·Power amplifier applications ·Recommended for 80W high fidelity audio frequency amplifier output stage


    Original     		PDF 2SA1942 2SC5199 -160V; 2sa1942 2SC5199

    toshiba marking code transistor

    Abstract: Audio Power Amplifier TOSHIBA TOSHIBA NOTE TOSHIBA Transistor 2SC5199 2-21F1A 2SA1942 2SC5199
    Text: 2SA1942 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1942 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −160 V min • Complementary to 2SC5199 • Recommended for 80-W high-fidelity audio frequency amplifier output stage


    Original     		PDF 2SA1942 2SC5199 toshiba marking code transistor Audio Power Amplifier TOSHIBA TOSHIBA NOTE TOSHIBA Transistor 2SC5199 2-21F1A 2SA1942 2SC5199

    New Jersey Semiconductor

    Abstract: No abstract text available
    Text: , Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2SA1942 Silicon PNP Power Transistor DESCRIPTION • High Collector-Emitter Breakdown VoltagePIN LEASE :V(BR)CEo=-160V(Min) 2.COLLECTOR • Complement to Type 2SC5199


    Original     		PDF 2SA1942 -160V 2SC5199 -50mA; New Jersey Semiconductor

    2SA1942

    Abstract: 2SC5199
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1942 DESCRIPTION •High Collector-Emitter Breakdown Voltage: V BR CEO= -160V(Min) ·Complement to Type 2SC5199 APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier


    Original     		PDF 2SA1942 -160V 2SC5199 -160V; 2SA1942 2SC5199

    2SC5199

    Abstract: 2SA1942
    Text: Inchange Semiconductor Product Specification 2SC5199 Silicon NPN Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SA1942 APPLICATIONS ·Power amplifier applications ·Recommended for 80W high fidelity audio frequency amplifier output stage


    Original     		PDF 2SC5199 2SA1942 2SC5199 2SA1942

    2SC5199

    Abstract: 2-21F1A 2SA1942
    Text: 2SC5199 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5199 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 160 V min • Complementary to 2SA1942 • Suitable for use in 80-W high fidelity audio amplifier’s output stage.


    Original     		PDF 2SC5199 2SA1942 2SC5199 2-21F1A 2SA1942

    2SA1942

    Abstract: 2SC5199
    Text: JMnic Product Specification 2SA1942 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PL package ・Complement to type 2SC5199 APPLICATIONS ・Power amplifier applications ・Recommended for 80W high fidelity audio frequency amplifier output stage PINNING


    Original     		PDF 2SA1942 2SC5199 -160V; 2SA1942 2SC5199

    2SC5199

    Abstract: 2-21F1A 2SA1942
    Text: 2SC5199 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5199 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 160 V min • Complementary to 2SA1942 • Suitable for use in 80-W high fidelity audio amplifier’s output stage.


    Original     		PDF 2SC5199 2SA1942 2SC5199 2-21F1A 2SA1942

    Untitled

    Abstract: No abstract text available
    Text: 2SC5199 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5199 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 160 V min • Complementary to 2SA1942 • Suitable for use in 80-W high fidelity audio amplifier’s output stage.


    Original     		PDF 2SC5199 2SA1942 2-21F1A

    2SC5199

    Abstract: 2-21F1A 2SA1942
    Text: TOSHIBA 2SC5199 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS. SILICON NPN TRIPLE DIFFUSED TYPE 2 S C 5 1 99 Unit in mm 43.3 ±0.2 20.5MAX. • • Complementary to 2SA1942 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. “ of


    OCR Scan     		PDF 2SC5199 2SA1942 2-21F1A 2SC5199

    Untitled

    Abstract: No abstract text available
    Text: 2SC5199 TOSHIBA 2 S C 5 1 99 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm 20.5M A X . • • J Ì3 .3 + 0 .2 - Complementary to 2SA1942 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage.


    OCR Scan     		PDF 2SC5199 2SA1942

    Untitled

    Abstract: No abstract text available
    Text: 2SA1942 TOSHIBA 2 S A 1 942 TO SHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 20.5M A X . • • Complementary to 2SC5199 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. M A X IM U M RATINGS Ta = 25°C


    OCR Scan     		PDF 2SA1942 2SC5199

    2SC5199

    Abstract: 2-21F1A 2SA1942 TOSHIBA Transistor 2SC5199
    Text: 2SC5199 TO SH IBA TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2 S C 5 1 99 Unit in mm • Complementary to 2SA1942 • Recommend for 80 W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Tc = 25°C


    OCR Scan     		PDF 2SC5199 2SA1942 2SC5199 2-21F1A 2SA1942 TOSHIBA Transistor 2SC5199

    A1942

    Abstract: 80W TRANSISTOR AUDIO AMPLIFIER 2-21F1A 2SA1942 2SC5199
    Text: 2SA1942 TO SHIBA 2 S A 1 942 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS. SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 43.3 ±0.2 20.5MAX. • • Complementary to 2SC5199 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. E P “ o f


    OCR Scan     		PDF 2SA1942 2SC5199 A1942 80W TRANSISTOR AUDIO AMPLIFIER 2-21F1A 2SA1942

    Untitled

    Abstract: No abstract text available
    Text: TO SH IB A 2SC5199 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S C 5 1 99 POWER AMPLIFIER APPLICATIONS. U nit in mm .3 + 0.2 20.5MAX • Complementary to 2SA1942 • Recommend for 80W High Fidelity Audio Frequency Amplifier O utput Stage. MAXIMUM RATINGS Ta = 25°C


    OCR Scan     		PDF 2SC5199 2SA1942

    Untitled

    Abstract: No abstract text available
    Text: 2SC5199 SILICON NPN TRIPLE DIFFUSED TYPE POW ER AMPLIFIER APPLICATIONS. • • U n it in m m Complementary to 2SA1942 Recommend for SOW High Fidelity Audio Frequency Amplifier Output Stage. M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage


    OCR Scan     		PDF 2SC5199 2SA1942

    A1942

    Abstract: 2-21F1A 2SA1942 2SC5199
    Text: 2SA1942 TO SH IBA 2 S A 1 942 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • SILICON PNP TRIPLE DIFFUSED TYPE Complementary to 2SC5199 Recommend for 80 W High Fidelity Audio Frequency Amplifier Oiitmit Sts fp. — x o - - MAXIMUM RATINGS Tc = 25°C


    OCR Scan     		PDF 2SA1942 2SC5199 A1942 2-21F1A 2SA1942

    A1942

    Abstract: 2-21F1A 2SA1942 2SC5199
    Text: 2SA1942 TOSHIBA 2 S A 1 942 T O S H IB A TRANSISTOR POWER AM PLIFIER APPLICATIO NS • • SILICON PNP TRIPLE DIFFUSED TYPE Complementary to 2SC5199 Recommend for 80 W High Fidelity Audio Frequency Amplifier Oiitmit Sts fp. — x o - - M A X IM U M RATINGS Ta = 25°C


    OCR Scan     		PDF 2SA1942 2SC5199 000707EAA2' A1942 2-21F1A 2SA1942

    2-21F1A

    Abstract: 2SA1942 2SC5199
    Text: 2SC5199 TO SH IBA TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2 S C 5 1 99 Unit in mm • Complementary to 2SA1942 • Recommend for 80 W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Tc = 25°C


    OCR Scan     		PDF 2SC5199 2SA1942 2-21F1A 2SA1942 2SC5199