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    2SC5171 Price and Stock

    Toshiba America Electronic Components 2SC5171,Q(J

    TRANS NPN 180V 2A TO220NIS
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    Toshiba America Electronic Components 2SC5171,ONKQ(J

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    Toshiba America Electronic Components 2SC5171(ONK,Q,M)

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    Toshiba America Electronic Components 2SC5171,MATUDQ(J

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    Toshiba America Electronic Components 2SC5171(LBS2MATQ,M

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    2SC5171 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC5171 Toshiba High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: TO-220NIS; Number Of Pins: 3; Viewing Angle: taping unavailable; Publication Class: High Frequency Switching Power Transistor; Application Scope: driver; Part Number: 2SA1930 Original PDF
    2SC5171 Unknown Scan PDF
    2SC5171 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC5171 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC5171 Toshiba Silicon NPN transistor for power amplifier and driver stage amplifier applications Scan PDF
    2SC5171,MATUDQ(J Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 2A 180V TO220-3 Original PDF
    2SC5171,ONKQ(J Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 2A 180V TO220-3 Original PDF
    2SC5171,Q(J Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 2A 180V TO220-3 Original PDF
    2SC5171(LBS2MATQ,M Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 2A 180V TO220-3 Original PDF
    2SC5171(ONK,Q,M) Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 2A 180V TO220-3 Original PDF
    2SC5171(Q,M) Toshiba 2SC5171 - TRANS NPN 180V 2A 2-10R1A Original PDF

    2SC5171 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    c5171

    Abstract: transistor c5171 2SC5171 2sa1930 transistor equivalent 2SA1930 2sc5171 2SC5171 transistor equivalent 2SA1930
    Text: 2SC5171 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5171 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 200 MHz typ. • Complementary to 2SA1930 Unit: mm Maximum Ratings (Tc = 25°C) Characteristics


    Original     		PDF 2SC5171 2SA1930 2-10R1A c5171 transistor c5171 2SC5171 2sa1930 transistor equivalent 2SA1930 2sc5171 2SC5171 transistor equivalent 2SA1930

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors 2SC5171 TO – 220F TRANSISTOR NPN 1. BASE FEATURES z High Transition Frequency z Power Amplifier Applications 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF O-220F 2SC5171 100mA 300mA

    2sc5171

    Abstract: No abstract text available
    Text: 2SC5171 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5171 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 200 MHz typ. • Complementary to 2SA1930 Unit: mm Maximum Ratings (Tc = 25°C) Characteristics


    Original     		PDF 2SC5171 2SA1930 2-10R1A 2sc5171

    A1930

    Abstract: 2SA1930 2sc5171 2sa1930 2SC5171
    Text: 2SA1930 東芝トランジスタ シリコンPNPエピタキシャル形 2SA1930 ○ 電力増幅用 ○ 励振段電力増幅用 単位: mm • トランジション周波数が高い。fT = 200 MHz 標準 • 2SC5171 とコンプリメンタリになります。


    Original     		PDF 2SA1930 2SC5171 SC-67 2-10R1A 20070701-JA A1930 2SA1930 2sc5171 2sa1930 2SC5171

    transistor c5171

    Abstract: C5171 2SC5171 transistor equivalent 2sa1930 transistor equivalent 2SA1930 2sc5171 2SC5171 2SA1930 2sc517
    Text: 2SC5171 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5171 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 200 MHz typ. • Complementary to 2SA1930 Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristics


    Original     		PDF 2SC5171 2SA1930 2-10R1A transistor c5171 C5171 2SC5171 transistor equivalent 2sa1930 transistor equivalent 2SA1930 2sc5171 2SC5171 2SA1930 2sc517

    A1930

    Abstract: transistor a1930 2SA1930 2SA1930 2sc5171 toshiba A1930 transistor 2SA1930
    Text: 2SA1930 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1930 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 200 MHz typ. • Complementary to 2SC5171 Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristics


    Original     		PDF 2SA1930 2SC5171 SC-67 2-10R1A A1930 transistor a1930 2SA1930 2SA1930 2sc5171 toshiba A1930 transistor 2SA1930

    c5171

    Abstract: 2SC5171 2SA1930 2sc5171 2-10R1A 2SA1930
    Text: 2SC5171 東芝トランジスタ シリコンNPNエピタキシャル形 2SC5171 ○ 電力増幅用 ○ 励振段電力増幅用 単位: mm • トランジション周波数が高い。fT = 200 MHz 標準 • 2SA1930 とコンプリメンタリになります。


    Original     		PDF 2SC5171 2SA1930 SC-67 2-10R1A 20070701-JA c5171 2SC5171 2SA1930 2sc5171 2-10R1A 2SA1930

    Untitled

    Abstract: No abstract text available
    Text: , Line. J.E.IIS.U C7 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2SA1930 Silicon PNP Power Transistor DESCRIPTION • High Transition Frenquency : fr=200MHz(Typ.) • Complementary to 2SC5171


    Original     		PDF 2SA1930 200MHz 2SC5171 O-220F -10mA

    A1930

    Abstract: transistor a1930 2SA1930 2sa1930 transistor equivalent toshiba A1930 2SA1930 2sc5171 2SC5171
    Text: 2SA1930 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1930 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 200 MHz typ. • Complementary to 2SC5171 Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristics


    Original     		PDF 2SA1930 2SC5171 SC-67 2-10R1A A1930 transistor a1930 2SA1930 2sa1930 transistor equivalent toshiba A1930 2SA1930 2sc5171 2SC5171

    2SC4793 2sa1837

    Abstract: 100 amp npn darlington power transistors 2sC5200, 2SA1943 10 amp npn darlington power transistors 2sC5200, 2SA1943, 2sc5198 2SC4684 datasheets 2sa1930 transistor equivalent 2sc5200 2SB906-Y 2sc3303
    Text: Part Number 2SC1627A 2SA817A 2SC2235 2SA965 2SC3665 2SA1425 2SC5174 2SA1932 2SC3423 2SA1360 2SC3421 2SA1358 2SC2983 2SA1225 2SC4793 2SA1837 2SC5171 2SA1930 2SC5196 2SA1939 2SC5197 2SA1940 2SC5198 2SA1941 2SD2386 2SB1557 2SD2387 2SB1558 2SD2636 2SB1682 2SC4688


    Original     		PDF 2SC1627A 2SA817A 2SC2235 2SA965 2SC3665 2SA1425 2SC5174 2SA1932 2SC3423 2SA1360 2SC4793 2sa1837 100 amp npn darlington power transistors 2sC5200, 2SA1943 10 amp npn darlington power transistors 2sC5200, 2SA1943, 2sc5198 2SC4684 datasheets 2sa1930 transistor equivalent 2sc5200 2SB906-Y 2sc3303

    transistor c5171

    Abstract: c5171 2sc5171
    Text: 2SC5171 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5171 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 200 MHz typ. • Complementary to 2SA1930 Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristics


    Original     		PDF 2SC5171 2SA1930 2-10R1A transistor c5171 c5171 2sc5171

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    2sC5200, 2SA1943

    Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
    Text: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current


    Original     		PDF BCE0016D 2sC5200, 2SA1943 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent

    2SA1930 2sc5171

    Abstract: transistor 2sc5171 2SC5171 2SA1930
    Text: TOSHIBA 2SC5171 2 S C 5 1 71 TO SHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS r • • High Transition Frequency : fp = 200MHz Typ. Complementary to 2SA1930 M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC5171 200MHz 2SA1930 2-10R1A 2SA1930 2sc5171 transistor 2sc5171 2SC5171 2SA1930

    Untitled

    Abstract: No abstract text available
    Text: 2SA1930 T O SH IB A 2 S A 1 930 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS 10 ± 0 .3 • • High Transition Frequency : Pp = 200MHz Typ. Complementary to 2SC5171 MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SA1930 200MHz 2SC5171 2-10R1A -180V

    2SA1930 2sc5171

    Abstract: 2SC5171 2SA1930
    Text: TO SH IBA 2SC5171 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE 2 S C 5 1 71 Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS 10 ±0.3 r • • 1.1 cn ro o 1.1 UNIT 0.75 ±0.15 V 2.54 ± 0.25 2.54±0.25 V V A 1 2 3 ic A :B 1. BASE


    OCR Scan     		PDF 2SC5171 200MHz 2SA1930 2-10R1A --180V, 2SA1930 2sc5171 2SC5171 2SA1930

    2sa1930

    Abstract: 2SA1930 2sc5171 2SC5171
    Text: TOSHIBA 2SA1930 2 S A 1 930 TO SHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS r • • High Transition Frequency : fp = 200MHz Typ. Complementary to 2SC5171 2 '^ "<v>0 o M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SA1930 200MHz 2SC5171 2-10R1A -180V 2sa1930 2SA1930 2sc5171 2SC5171

    Untitled

    Abstract: No abstract text available
    Text: 2SC5171 T O SH IB A TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE 2 S C 5 1 71 Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS 10 ± 0 .3 • • High Transition Frequency : Pp = 200MHz Typ. Complementary to 2SA1930 MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC5171 200MHz 2SA1930 2-10R1A

    2-10R1A

    Abstract: No abstract text available
    Text: 2SA1930 SILICON PNP EPITAXIAL TYPE Unit in mm PO W ER AM PLIFIER APPLICATIONS. DRIVER STAGE AM PLIFIER APPLICATIONS. • • ¿3 2 t O Z illl? W - High Transition Frequency : fx = 200MHz Typ. Complementary to 2SC5171 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		PDF 2SA1930 200MHz 2SC5171 2-10R1A -160V, --10mA,

    2SA1930 2sc5171

    Abstract: 2SC5171 transistor 2sc5171 2SA1930
    Text: TO SH IBA 2SC5171 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE 2 S C 5 1 71 Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS r • • High Transition Frequency : fr[' = 200MHz Typ. Complementary to 2SA1930 MAXIMUM RATINGS (Tc = 25°C)


    OCR Scan     		PDF 2SC5171 200MHz 2SA1930 2-10R1A --180V, 2SA1930 2sc5171 2SC5171 transistor 2sc5171 2SA1930

    2SA1930 2sc5171

    Abstract: 2SA1930 2SC5171
    Text: TO SH IBA 2SA1930 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S A 1 930 POWER AMPLIFIER APPLICATIONS Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS High Transition Frequency : fp = 200 MHz Typ. • Complementary to 2SC5171 ± 0.2 ÍY^ o 2.7±Q 2 of 3.9


    OCR Scan     		PDF 2SA1930 2SC5171 2SA1930 2sc5171 2SA1930 2SC5171

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5171 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 1 <;r s 1 7 1 MT WÊÊÊF •M ■ Unit in mm POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS • • 10 + 0.3 , f 3.2 ± 0 . 2 2.7±02 High Transition Frequency : fr = 200MHz Typ.


    OCR Scan     		PDF 2SC5171 200MHz 2SA1930 2-10R1A

    2SA1930

    Abstract: 2SC5171 VQE 11E 2SA19 transistor 2SA1930
    Text: 2SA1930 TOSHIBA 2 S A 1 930 TO S H IB A TRANSISTOR POWER AM PLIFIER APPLICATIO NS SILICON PNP E PITAX IAL TYPE Unit in mm DRIVER STAGE AM PLIFIER APPLICATIO NS 10 ±0.3 -5 y < High Transition Frequency : fp = 200 MHz Typ. Complementary to 2SC5171 o


    OCR Scan     		PDF 2SA1930 2SC5171 2SA1930 2SC5171 VQE 11E 2SA19 transistor 2SA1930