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    2SC30 Search Results

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    L77HDCH62SC309 Amphenol Communications Solutions Dsub, Stamped Signal 3A, High Density, Straight Soldercup, 62 Socket, 0.76m (30 in) Gold, 4-40 Rear Insert, Without Bracket, Without Boardlock Visit Amphenol Communications Solutions
    L77HDC62SC309 Amphenol Communications Solutions Dsub, Stamped Signal 3A, High Density, Straight Soldercup, 62 Socket, 0.76m (30 in) Gold, 3.05mm (0.120in) Clear Hole, Without Bracket, Without Boardlock Visit Amphenol Communications Solutions
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    2SC30 Price and Stock

    Panduit Corp CMSA12-2S-C300

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    Panduit Corp CMEB12-2S-C300

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    Panduit Corp PLT2S-C30

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    Panduit Corp CMEB24-2S-C300

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    Panduit Corp CMSB12-2S-C300

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    2SC30 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC30 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC30 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC30 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC30 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC30 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC30 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC30 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC300 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC300 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SC300 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC300 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC300 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC300 Unknown Cross Reference Datasheet Scan PDF
    2SC300 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC300 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC300 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC300 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC300 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC3000 Sanyo Semiconductor HF amplifier Original PDF
    2SC3000 Various Russian Datasheets Transistor Original PDF
    ...

    2SC30 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC3055

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification 2SC3055 Silicon NPN Power Transistors • DESCRIPTION ·With TO-220C package ·High breakdown voltage ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING PIN DESCRIPTION 1 Base


    Original
    PDF 2SC3055 O-220C PW300s cycle10% 2SC3055

    C3076

    Abstract: 2SC3076
    Text: Transistors SMD Type Silicon NPN Epitaxial 2SC3076 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 Low Collectror Saturation Voltage:VCE sat =0.5V(Max.)(IC=1A) +0.1 0.60-0.1 2.3 +0.15 4.60-0.15 3 .8 0 +0.15


    Original
    PDF 2SC3076 O-252 C3076 C3076 2SC3076

    2SA1232

    Abstract: 2SC3012
    Text: JMnic Product Specification 2SA1232 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PFa package ・Complement to type 2SC3012 APPLICATIONS ・Audio frequency power amplifier. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter


    Original
    PDF 2SA1232 2SC3012 -130V; 2SA1232 2SC3012

    Untitled

    Abstract: No abstract text available
    Text: 2SC3072 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) •


    Original
    PDF 2SC3072

    Untitled

    Abstract: No abstract text available
    Text: 2SC3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 µs (typ.)


    Original
    PDF 2SC3076 2SA1241

    2SC3047

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification 2SC3047 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High voltage ,high speed switching ・High reliability APPLICATIONS ・Switching regulators ・Ultrasonic generators ・High frequency inverters


    Original
    PDF 2SC3047 O-220C 2SC3047

    2SC3088

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification 2SC3088 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High breakdown voltage VCBO≥800V ·Fast switching speed ·Wide area of safe operation APPLICATIONS ·500V/4A Switching Regulator Applications


    Original
    PDF 2SC3088 VCBO800V) 00V/4A 2SC3088

    npn 10a 800v

    Abstract: 2SC3090
    Text: Inchange Semiconductor Product Specification 2SC3090 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High breakdown voltage VCBO≥800V ・Fast switching speed ・Wide ASO(Safe Operating Area) APPLICATIONS ・500V/10A Switching Regulator Applications


    Original
    PDF 2SC3090 VCBO800V) 00V/10A npn 10a 800v 2SC3090

    toshiba c3075

    Abstract: 2SC3075 C3075
    Text: 2SC3075 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC3075 Switching Regulator and High Voltage Switching Applications DC-DC Converter Applications DC-AC Converter Applications • Excellent switching times: tr = 1.0 s (max) • High collector breakdown voltage: VCEO = 400 V


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    PDF 2SC3075 toshiba c3075 2SC3075 C3075

    c3074

    Abstract: 2SC3074 C3074 y 2SA1244
    Text: 2SC3074 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3074 ○ 大電力スイッチング用 • 単位: mm コレクタ飽和電圧が低い。: VCE (sat) = 0.4 V (最大) (IC = 3 A) • スイッチング時間が速い。: tstg = 1.0 s (標準)


    Original
    PDF 2SC3074 2SA1244 20070701-JA c3074 2SC3074 C3074 y 2SA1244

    2SC3043

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SC3043 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Fast switching speed ·Wide area of safe operation ·High breakdown voltage APPLICATIONS ·For switching regulator applications PINNING see Fig.2


    Original
    PDF 2SC3043 2SC3043

    2SC3039

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SC3039 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High breakdown voltage VCBO 500V . ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·400V/7A switching regulator applications


    Original
    PDF 2SC3039 O-220C 00V/7A 2SC3039

    2sc3090

    Abstract: npn 10a 800v 10A Switching Regulator
    Text: SavantIC Semiconductor Product Specification 2SC3090 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High breakdown voltage VCBO 800V ·Fast switching speed ·Wide ASO Safe Operating Area APPLICATIONS ·500V/10A Switching Regulator Applications


    Original
    PDF 2SC3090 00V/10A 2sc3090 npn 10a 800v 10A Switching Regulator

    2SC3025

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SC3025 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage APPLICATIONS ·High voltage power switching character display horizontal deflection output PINNING see Fig.2 PIN DESCRIPTION


    Original
    PDF 2SC3025 2SC3025

    Untitled

    Abstract: No abstract text available
    Text: 2SC3072 SILICON NPN EPITAXIAL T Y P E STROBO FLASH APPLICATIONS. Unit in iran MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES: . High DC Current Gain: hFE=140-~450 VCE=2V, IC=0.5A hFE=70(Min.) (VcE=2V, Ic =4A) . Low Collector Saturation Voltage : VCE(sat)=1.0V(Max.) (Ic=4A, Ib =0.1A)


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    PDF 2SC3072 T11RAT10

    Untitled

    Abstract: No abstract text available
    Text: 2SC301 1 SIUCQN NPN EPITAXIAL PLANAR t y p e t r a n s i s t o r U H F-C BAND LOW NOISE AMPLIFIER APPLICATIONS. • • • High Gain Low Noise Figure High f r U nit in mm : |S 2 ie|2= 12dB Typ. : NF = 2.3dB (Typ.), f= lG H z : f'i’ = 6.5GIIz M AXIM UM RATINGS (Ta = 25°C)


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    PDF 2SC301 SC-59 S21eP 2SC3011 --j50

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC3099 Unit in mm V H F - U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure. N F= 1.7dB, |S 2 ie l2 = 15dB f= 500MHz NF = 2.5dB, |S2 ie l2 = 9.5dB(f=lGHz) M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC


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    PDF 2SC3099 500MHz) SC-59

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC3098 U nit in mm V H F— UHF B A N D LO W NOISE AM PLIFIER APPLICATIONS. + 0.5 2.5 - 0 . 3 + 0 .2 5 1 .5 - 0 .1 5 • Low Noise Figure. dd . NF = 2.5dB, |S2iel2= 14.5dB f= 500MHz +I Et . NF = 3.0dB, |S2 ie l2 = 9.0dB(f=lGHz)


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    PDF 2SC3098 500MHz) SC-59 S21el2

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 2SA1245 167 *2SC1923 2SC2996 266 * 2N3905 2SA1255 170 *2SC1959 2SC3011 272


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    PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737

    J600 transistor

    Abstract: transistor J600 2SC3070 VEBO-15V
    Text: Ordering number: EN 923G _ 2SC3070 No.923G NPN Epitaxial Planar Silicon Transistor High hpE> Low-Frequency General-Purpose Amp Applications Applications • Low-frequency, general-purpose amp., various drivers, muting circuit Features • High DC current gain hpE=800 to 3200}


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    PDF 2SC3070 Ratings/Ta-25Â J600 transistor transistor J600 VEBO-15V

    T1P122

    Abstract: T1P41C MJE30SST t1p41 T1P31 T1P41A BD211 2SD880Y 2SD88D 2N529B
    Text: POWER PACKAGE TRANSISTORS NPN M a x im u m R a t in g s Type No. 2SC3039 MJE13005 T1PS0 vEB0 PD •CBO • vC8 (V) (V) (V) (W) (V) Min Min Min e Tc=25°C 500 400 700 400 500 400 7 50 9 Max 10 hFE 400 40 e 'c (A) Min 75 5 450 350 5 300 300 3 21 T1P48 400


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    PDF 2SC3039 MJE13005 T1P49 MJE30SST TIP31A T1P41A TIP120 CIL4006 BD211 BD243 T1P122 T1P41C t1p41 T1P31 2SD880Y 2SD88D 2N529B

    2SD1539

    Abstract: d53 pnp transistor 2SC4714 2sa137 2sb1071 2SA1375 2SA1605 2SA1817 2SC2258 2SC2923
    Text: Transistors Selection Guide by Applications and Functions TO-126 (D523K, D53) U Type (D41) V ceo MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F (D59) (V) 2SA1605 2SC3063 2SC2923 2SC4714 Chroma input V < n (V) lc (A) -0 .0 5


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    PDF O-126 O-202 T0-220 O-220F 2SA1605 2SC2258 2SC3063 2SC2923 2SC4714 2SC3942 2SD1539 d53 pnp transistor 2sa137 2sb1071 2SA1375 2SA1605 2SA1817 2SC2258

    J135

    Abstract: 2SC3020
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC3020 NPN E P IT A X IA L PLANAR T Y P E DESCRIPTION 2 S C 3 0 2 0 is a silicon NPN epitaxial planar typ e transisto r design OUTLINE DRAWING D im e n s io n s in m m ed fo r UHF po w e r am plifier applications. FEATURES •


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    PDF 2SC3020 2SC3020 J135

    1013C

    Abstract: 2SC3090 5.1b2 EN1013C ir1014
    Text: Ordering number :EN1013C I 2SC3090 NO.X013C NPN Triple Diffused Planar Silicon Transistor For Switching Regulators Features . High breakdown voltage VCgQ^800V . . Fast switching speed. . Wide ASO. Absolute Maximum Ratings at Ta=25 C Collector-to-Base Voltage


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    PDF EN1013C 1013C 2SC3090 PWs300ps 1013C 2SC3090 5.1b2 EN1013C ir1014