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    2SC263 Search Results

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    2SC263 Price and Stock

    Panasonic Electronic Components 2SC26320R

    TRANS NPN 150V 0.05A TO92L-A1
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    Panasonic Electronic Components 2SC26310RA

    TRANS NPN 150V 0.05A TO92-B1
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    2SC26310RA Ammo Pack
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    Panasonic Corporation 2SC2637RL

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    Bristol Electronics 2SC2637RL 50
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    Others 2SC2636-T

    TRANSISTOR,BJT,NPN,20V V(BR)CEO,50MA I(C),SC-71
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    Quest Components 2SC2636-T 50
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    2SC263 Datasheets (125)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC263 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC263 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC263 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC263 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC263 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC263 Unknown Vintage Transistor Datasheets Scan PDF
    2SC263 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC263 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC263 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC263 Unknown Cross Reference Datasheet Scan PDF
    2SC2630 Various Russian Datasheets Transistor Original PDF
    2SC2630 Mitsubishi MITSUBISHI RF POWER TRANSISTOR Scan PDF
    2SC2630 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SC2630 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    2SC2630 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC2630 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC2630 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC2630 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC2630 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SC2630 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    ...

    2SC263 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA1123

    Abstract: 2SC2631
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1123 Silicon PNP epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SC2631 Unit: mm 4.0±0.2 0.7±0.2 • Satisfactory forward current transfer ratio hFE collector current IC


    Original     		PDF 2002/95/EC) 2SA1123 2SC2631 2SC2631, 2SA1123 2SC2631

    2SC2636

    Abstract: 2SC263
    Text: Transistor 2SC2636 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation Unit: mm 6.9±0.1 1.5 Ta=25˚C 1.0 0.55±0.1 Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage


    Original     		PDF 2SC2636 100MHz 200MHz 2SC2636 2SC263

    2SA1124

    Abstract: 2SC2632
    Text: Transistor 2SA1124 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SC2632 Unit: mm 5.9±0.2 4.9±0.2 ● ● • Absolute Maximum Ratings 0.7±0.1 0.7+0.3 –0.2 ● Satisfactory foward current transfer ratio hFE collector current IC


    Original     		PDF 2SA1124 2SC2632 2SC2632, 2SA1124 2SC2632

    2SA1123

    Abstract: 2SC2631
    Text: Transistor 2SA1123 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SC2631 Unit: mm ● ● ● Satisfactory foward current transfer ratio hFE collector current IC characteristics. High collector to emitter voltage VCEO.


    Original     		PDF 2SA1123 2SC2631 2SC2631, 2SA1123 2SC2631

    2SA1123

    Abstract: 2SC2631
    Text: Transistor 2SC2631 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SA1123 Unit: mm 5.0±0.2 ● 0.7±0.1 12.9±0.5 ● Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO.


    Original     		PDF 2SC2631 2SA1123 2SA1123 2SC2631

    2SA1127

    Abstract: 2SC2634 SC-43A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC2634 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SA1127 Unit: mm 0.7±0.1 • Absolute Maximum Ratings Ta = 25°C Collector-emitter voltage (Base open)


    Original     		PDF 2002/95/EC) 2SC2634 2SA1127 SC-43A O-92-B1 2SA1127 2SC2634 SC-43A

    2SA1123

    Abstract: 2SC2631
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1123 Silicon PNP epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SC2631 Unit: mm 4.0±0.2 0.7±0.2 • Satisfactory forward current transfer ratio hFE collector current IC


    Original     		PDF 2002/95/EC) 2SA1123 2SC2631 2SC2631, 2SA1123 2SC2631

    transistor 2sc2634

    Abstract: 2SA1127 2SC2634
    Text: Transistor 2SC2634 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SA1127 Unit: mm 5.0±0.2 4.0±0.2 Low noise voltage NV. High foward current transfer ratio hFE. 0.7±0.2 ● • Absolute Maximum Ratings 12.9±0.5


    Original     		PDF 2SC2634 2SA1127 transistor 2sc2634 2SA1127 2SC2634

    2SA1123

    Abstract: 2SC2631 SC-43A
    Text: Transistors 2SC2631 Silicon NPN epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SA1123 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 0.7±0.1 12.9±0.5 • Satisfactory linearity of forward current transfer ratio hFE • High collector-emitter voltage Base open VCEO


    Original     		PDF 2SC2631 2SA1123 2SA1123 2SC2631 SC-43A

    2SA1124

    Abstract: 2SC2632
    Text: Transistor 2SA1124 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SC2632 Unit: mm 5.9±0.2 4.9±0.2 ● • Absolute Maximum Ratings 0.7±0.1 +0.3 ● 0.7–0.2 ● Satisfactory foward current transfer ratio hFE collector current IC


    Original     		PDF 2SA1124 2SC2632 2SC2632, 2SA1124 2SC2632

    2SC636

    Abstract: 2sc635 MHW820-1 TP3008 2SC2897 SD1477 2sc2652 TP3034 2SC1804 SD1470
    Text: POWER RF CROSS REFERENCE INDUST RY STANDARD 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC1968A 2SC2082 2SC2100 2SC2101 2SC2102 2SC2103A 2SC2105 2SC2181 2SC2282 2SC2290 2SC2420 2SC2508 2SC2510 SC2628 2SC2629 2SC2630 2SC2642


    Original     		PDF 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC636 2sc635 MHW820-1 TP3008 2SC2897 SD1477 2sc2652 TP3034 2SC1804 SD1470

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SC2636 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation Unit: mm 2.5±0.1 • Absolute Maximum Ratings Ta=25˚C (1.0) (0.85) 0.45±0.05 Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage


    Original     		PDF 2SC2636 85nteed

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC2634 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SA1127 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • Low noise voltage NV • High forward current transfer ratio hFE


    Original     		PDF 2002/95/EC) 2SC2634 2SA1127

    2SA1123

    Abstract: 2SC2631 2sa1123 transistor
    Text: Transistor 2SA1123 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SC2631 Unit: mm ● ● ● Satisfactory foward current transfer ratio hFE collector current IC characteristics. High collector to emitter voltage VCEO.


    Original     		PDF 2SA1123 2SC2631 2SC2631, 2SA1123 2SC2631 2sa1123 transistor

    2SC2632

    Abstract: 2SA1124 TO-92L-A1 2sa112
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC2632 Silicon NPN epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SA1124 Unit: mm 4.9±0.2 0.7±0.1 0.7+0.3 –0.2 • Satisfactory linearity of forward current transfer ratio hFE


    Original     		PDF 2002/95/EC) 2SC2632 2SA1124 2SC2632 2SA1124 TO-92L-A1 2sa112

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1123 Silicon PNP epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SC2631 Unit: mm 4.0±0.2 5.1±0.2 M Di ain sc te on na tin nc ue e/


    Original     		PDF 2002/95/EC) 2SA1123 2SC2631

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1124 Silicon PNP epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SC2632 Unit: mm 4.9±0.2 8.6±0.2 M Di ain sc te on na tin nc ue e/


    Original     		PDF 2002/95/EC) 2SA1124 2SC2632

    BF456

    Abstract: 2sc1941k 2SC34230 2SC2682P 2SC3271 to92 nec RF package SOT89 BF254 BF179A 2SC225 2SC2682E
    Text: RF POWER SILICON NPN Item Number Part Number I C S 10 Manufacturer 20 25 30 35 40 45 50 BF179A BF179A BF179A BF179B BF179B BF179B BF179C BF179C BF179C -zsDT463 MM3002 ST3002 MM3003 2SC2632 2SC2633 2N706 2N706A 2N706B 2N706C 2SC34230 2SC3423Y 2SC1012 2SC1012A


    Original     		PDF 2SC3424 TBF869 TBF871 2SC1940K 2SC1940L 2SC1940M 2SC2780 2SC1941K 2SC1941L BF456 2SC34230 2SC2682P 2SC3271 to92 nec RF package SOT89 BF254 BF179A 2SC225 2SC2682E

    2SC2631

    Abstract: 2SA1123
    Text: Transistor 2SC2631 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SA1123 Unit: mm ● ● ● Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO.


    Original     		PDF 2SC2631 2SA1123 100MHz 2SC2631 2SA1123

    2SC2637

    Abstract: AS131
    Text: 2SC2637 2SC2637 '> i zj > N P N H jE iS ffcy u —•^"JF^/Si NPN Triple Diffused Planar ^ 7 - TV $ ■ i# v ttj^ jffl/C o lo r TV Chroma Output p S /F e a tu re s • 3 • z i ) s 7 7 i f k 9 i Pc ^ ^ - X i ■ ’y ; ? 1E J ± V C E O ^ i | ^ V > 0 / H i g h


    OCR Scan     		PDF 2SC2637 O-202 Vck-50V, 2SC2637 AS131

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2630 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2 S C 2 6 3 0 is a silicon N P N epitaxial planar type transistor designed for R F power amplifiers in V H F band m obile radio applications. Dimensions in mm FU


    OCR Scan     		PDF 2SC2630

    2SC2879

    Abstract: 150PEP
    Text: high-Free O utput Transistors F5 Package €3 Po W HF/CB N . 2SC2395 20PEP 2SC2099 30MHz 012.7 09.5 10-12PEP 60PEP 2SC2290 100PEP 2SC2879 150PEP 2SC2510* 200PEP 2SC2652" *: Vcc=28V Vcc=50V F5 Package Po(W) VHF 175MHz \ 012.7 □ 9.5 6 2SC2638 15 2SC2639 32


    OCR Scan     		PDF 30MHz 10-12PEP 20PEP 60PEP 100PEP 150PEP 200PEP 2SC2395 2SC2099 2SC2290 2SC2879

    UPA75HA

    Abstract: 2SC2602 2SC2611B 2SC2650 2SC2601 2sc2335 2SC2534 2SC2625 upa75 2SC3082K
    Text: - 142 - £ m € a T yp e No. «5 T 2SC 2591 « 2SC 2592 M anuf. T 2SC 2595 «i T 2SC 2596 T i* = SANYO 3K *£ TO SH IBA h 2SC 2605 w 2SC 2SC 2SC r 2SC1657 /' i B B 2SC 2620 ✓ im 2SC 2621 / ÍL ÍL ÍL ÍL ÍL ÍL ÍL ÍL ÍL ÍL ÍL •ti 2SC 2618 A 2SC2634


    OCR Scan     		PDF 2SC2591 2SC2592 2SC2595 2SC2596 2SC2597 2SC2598 2SC2599 2SC2600 2SC2601 2SC2602 UPA75HA 2SC2602 2SC2611B 2SC2650 2sc2335 2SC2534 2SC2625 upa75 2SC3082K

    2SC1815

    Abstract: 2sc372 2sc1741 2sc2061 2sc2381 2sc1907 2SC2284 2sc1726 2SC2495 2sc458
    Text: - 10 2 - £ tt € Manuf. 2SC 944$ a « 2SC 945 / s n 2SC 947 ^ T 2SC 948 ^ te T m Type No. * * * h SANYO * M B TOSHIBA S NEC B ÍL HITACHI 2SC1907 2SC1215 2SC2926 2SC458 2SC2634 2SC2410 2SC828 2SC387A %rBM 2SC1959 2SC945 2SC454 WrB m 2SU»4ö 2SC454 *


    OCR Scan     		PDF 2SC944 2SC945 2SC947 2SC948 2SC1815 2SC387A 2SC1959 2SC1626 2sc372 2sc1741 2sc2061 2sc2381 2sc1907 2SC2284 2sc1726 2SC2495 2sc458