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    2SC1881 Search Results

    2SC1881 Datasheets (25)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC1881 Hitachi Semiconductor Silicon NPN Triple Diffused Original PDF
    2SC1881 Hitachi Semiconductor Silicon NPN Triple Diffused High Gain Amplifier Power Switching Original PDF
    2SC1881 Renesas Technology Silicon NPN Triple Diffused Original PDF
    2SC1881 Various Russian Datasheets Transistor Original PDF
    2SC1881 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC1881 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SC1881 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC1881 Unknown Cross Reference Datasheet Scan PDF
    2SC1881 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SC1881 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC1881 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC1881(K) Hitachi Semiconductor Silicon NPN Darlington Transistor Original PDF
    2SC1881K Hitachi Semiconductor Silicon NPN Triple Diffused Original PDF
    2SC1881(K) Renesas Technology Silicon NPN Triple Diffused Original PDF
    2SC1881K Renesas Technology Silicon NPN Triple Diffused Original PDF
    2SC1881K Renesas Technology Silicon NPN Triple Diffused Original PDF
    2SC1881K Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SC1881K Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC1881K Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC1881K Unknown Shortform Transistor PDF Datasheet Short Form PDF

    2SC1881 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TM 1628 IC

    Abstract: IC TM 1628 Datasheet TM 1628 TM 1628 Datasheet 2SC1881 DSA003644
    Text: 2SC1881 K Silicon NPN Triple Diffused ADE-208-882 (Z) 1st. Edition Sep. 2000 Application High gain amplifier power switching Outline TO-220AB 2 1 1 2 3 1. Base 2. Collector (Flange) 3. Emitter 6.8 kΩ (Typ) 400 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC1881 ADE-208-882 O-220AB TM 1628 IC IC TM 1628 Datasheet TM 1628 TM 1628 Datasheet DSA003644

    TM 1628 IC

    Abstract: ic tm 1628 IC TM 1628 Datasheet TM 1628 Datasheet 2SC1881 Hitachi DSA00388
    Text: 2SC1881 K Silicon NPN Triple Diffused Application High gain amplifier power switching Outline TO-220AB 2 1 1 2 3 1. Base 2. Collector (Flange) 3. Emitter 6.8 kΩ (Typ) 400 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage


    Original     		PDF 2SC1881 O-220AB TM 1628 IC ic tm 1628 IC TM 1628 Datasheet TM 1628 Datasheet Hitachi DSA00388

    Hitachi DSA00164

    Abstract: 2SC1881
    Text: 2SC1881 K Silicon NPN Triple Diffused Application High gain amplifier power switching Outline TO-220AB 2 1 1 2 3 1. Base 2. Collector (Flange) 3. Emitter 6.8 kΩ (Typ) 400 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage


    Original     		PDF 2SC1881 O-220AB D-85622 Hitachi DSA00164

    Untitled

    Abstract: No abstract text available
    Text: 2SC1881K Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)30’ Maximum Operating Temp (øC)150õ I(CBO) Max. (A)200u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1.0k


    Original     		PDF 2SC1881K

    2SC1881

    Abstract: NPN POWER DARLINGTON TRANSISTORS
    Text: Inchange Semiconductor Product Specification 2SC1881 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·DARLINGTON ·High DC current gain APPLICATIONS ·High gain amplifier power switching PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to


    Original     		PDF 2SC1881 O-220C 2SC1881 NPN POWER DARLINGTON TRANSISTORS

    2SC1881

    Abstract: NPN POWER DARLINGTON TRANSISTORS
    Text: SavantIC Semiconductor Product Specification 2SC1881 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·DARLINGTON ·High DC current gain APPLICATIONS ·High gain amplifier power switching PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to


    Original     		PDF 2SC1881 O-220C 2SC1881 NPN POWER DARLINGTON TRANSISTORS

    2SC1881

    Abstract: No abstract text available
    Text: 2SC1881 K Silicon NPN Triple Diffused High Gain Amplifier Power Switching Absolute Maximum Ratings Ta = 25°C Item TO-220AB Symbol Rating Unit ————————————————————– Collector to base voltage VCBO 60 V ————————————————————–


    Original     		PDF 2SC1881 O-220AB

    Hitachi DSA002787

    Abstract: 2SC1881K
    Text: 2SC1881 K Silicon NPN Triple Diffused Application High gain amplifier power switching Outline Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 60 V Emitter to base voltage


    Original     		PDF 2SC1881 Hitachi DSA002787 2SC1881K

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


    Original     		PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


    Original     		PDF Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent

    2N5657 equivalent

    Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.


    Original     		PDF 2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes

    MJE494

    Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS


    Original     		PDF BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037

    2SD669 equivalent

    Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc


    Original     		PDF 2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544

    2SC495

    Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink


    Original     		PDF MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar

    D42C5

    Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is


    Original     		PDF MJE16204 MJE16204 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C D42C5 transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220

    mje521 equivalent

    Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry


    Original     		PDF MJE521 MJE371 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C mje521 equivalent BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100

    2N3055

    Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes


    Original     		PDF MJE2955T MJE3055T TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N3055 BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64

    Untitled

    Abstract: No abstract text available
    Text: HITACHI 2SC1881 K - Silicon NPN Triple Diffused High Gain Amplifier Power Switching Absolute Maximum Ratings Ta = 25°C Item Symbol Rating Unit Collector to base voltage VCB0 60 V Collector to emitter voltage VCE0 60 V Emitter to base voltage V EBO


    OCR Scan     		PDF 2SC1881

    Untitled

    Abstract: No abstract text available
    Text: 2SC1881 K Silicon NPN Triple Diffused HITACHI Application H igh gain am plifier pow er switching Outline TO -220AB 2 O 1 < O1. Base 2. Collector (Flange) 3. Emitter 6.8 k£2 (Typ) 400 Q. (Typ) Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Ratings Unit


    OCR Scan     		PDF 2SC1881 -220AB

    Untitled

    Abstract: No abstract text available
    Text: 2SC1881 K Silicon NPN Triple Diffused HITACHI Application High gain amplifier power switching Outline TO-220AB 3 Absolute Maximum Ratings ( T a = 25°C) Item Symbol Ratings Unit C ollector to base voltage ^C B Q 60 V C ollector to em itter voltage VCEQ 60


    OCR Scan     		PDF 2SC1881 O-220AB

    2Sc1881

    Abstract: No abstract text available
    Text: 2SC1881 K Silicon NPN Triple Diffused HITACHI Application High gain amplifier power switching Outline TO-220AB Ì Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Ratings Unit Collector to base voltage ^G B O 60 V Collector to em itter voltage VCEo 60 V


    OCR Scan     		PDF 2SC1881 O-220AB 10Hitachi D-85622

    2SC1565

    Abstract: 2sD1392 2SC3469 2SD1431 2SC495 2SC2824 2SD1388 2SD600 2SD1876 2SD1499
    Text: - M € T y p e No. tt it 2SD 1377K eh ft 2SD 1377 - 2SD 13 7 8 □— A 2SD 1 379 € Manuf. m h SANYO 2 TOSHIBA 2SC1212A 2SD549 2SD1520L/S 2SC2877 2SD 1381 - □ —A 2SD600 2SC2824 2SD 1382 — □ —A 2SD600 2SC2824 2SD 1383 s. □ —A □ —A 2SD1207


    OCR Scan     		PDF 2SD1196 2SD633 2SD1634 2SD2024 1377K 2SD1024 2SD600 2SC495 2SC1212A 2SD946 2SC1565 2sD1392 2SC3469 2SD1431 2SC495 2SC2824 2SD1388 2SD1876 2SD1499

    2SC3558

    Abstract: 2SD1431 2SD1209 2SD2061 2SC2021 2SD1407 2sd 1507 2SD1488 k 1487 2SD2532
    Text: - 242 - % it Type No. 2SD 1477 2SD 1478 ^ 2SD 1479 4 2SD 1480 *• 2SD 1481 2SD 1482 2SD 1483 ¿ r 2SD 1484 r 2SD 1485 ^ 2SD I486 2SD 1487 f 2S0 1488 * 2SD 1489 2SD 14902SD 1491 , 2SD 1492 2SD 1493 2SD 1494 ^ 2SD 1495 2SD 1496 " 2SD 1497 ' 2SD 2SD 2SD 2SD


    OCR Scan     		PDF 2SC3331 2SC2021 2SD1851 2SD2532 2SD1209 2SD1383K 2SD1400 2SD1429 2SD1060 2SC3540 2SC3558 2SD1431 2SD2061 2SC2021 2SD1407 2sd 1507 2SD1488 k 1487 2SD2532

    2SA899

    Abstract: 2SC1903 2SC1792 2sc1855 2-13B1A 2SC1815L 2SA1015L 2SC1840 2SA991 2sc1846
    Text: - no Ta=25‘ C, *EfJíáTc=25‘ C} •WTX -a m -Çt -Él iè m VCBO Vc e o IC(DC Pc Pc* (V) (V) (A) (W) (W) IcBO (max) (a a ) VcB (V) ñ (min) hFE ft & (max) fé Vc e (V) (13=25^) ïc/ OHHàtypfc] (max) (V) I e (A) (V) le (A) Ib (A) 2SC1763 30MHz PA 65


    OCR Scan     		PDF 2SC1763 30MHz 2SC1764 2SC1765 400MHz 2SC1775 2SC1775A 2SC1778 2SC1779 2SA899 2SC1903 2SC1792 2sc1855 2-13B1A 2SC1815L 2SA1015L 2SC1840 2SA991 2sc1846