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2SC139 Datasheets (159)

Part	Manufacturer	Description	Datasheet Type	PDF
2SC139	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF
2SC139	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF
2SC139	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF
2SC139	Unknown	High Frequency Device Data Book (Japanese)	Scan	PDF
2SC139	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2SC139	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SC139	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SC139	Unknown	The Japanese Transistor Manual 1981	Scan	PDF
2SC139	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2SC139	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SC1390	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF
2SC1390	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SC1390	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SC1390	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF

2SC1390	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SC1390	Unknown	Cross Reference Datasheet	Scan	PDF
2SC1391	Various Russian Datasheets	Transistor	Original	PDF
2SC1391	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF
2SC1391	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF
2SC1391	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF

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2SC139 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: 2SC1391 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)300º V(BR)CBO (V)300 I(C) Max. (A)100m Absolute Max. Power Diss. (W)6.5 Maximum Operating Temp (øC)140õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	PDF	2SC1391 Freq25M
PT8828 Abstract: sot123 package KT922G 2SC1239 SGSF324 motorola 2n4932 BLY93A S0122 J03020 2SC2094 Text: RF POWER SILICON NPN Item Part Number Number I C 5 10 >= 2.5 A, 2SC1398 2S01802 2N4226 2SC2078 2SC1909 2SC3294 2S01724 2S01815 2N3928 2N3929 ~~g~i~4 15 20 S01222-5 2N5642 2SC1306 2SC1306 SK3529 2SC585 2SC636 BLX13 ~t~~~~ 25 30 BlY93A J03020 BlX13C BlW83 BlY93C	Original	PDF	2SC1398 2S01802 2N4226 2SC2078 2SC1909 2SC3294 O-220 O-220var O-22Ovar PT8828 sot123 package KT922G 2SC1239 SGSF324 motorola 2n4932 BLY93A S0122 J03020 2SC2094
2N50b Abstract: BCY5B 2SC307B DIODE bon BCW60RD 2N50B2 BFW83 Text: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 BFW83 2SC997 2N50B2 2N50B2 TISB4 TISB4 BSX2B 2SC3122 BFW64 NR421DE NR421DF BF260 BF261 2SC1394 2SC1394 BF329 2N3933 BFW70 ZTX327 BFSll ~~iJ~7 25 30 MPSH33 SE5035 BFR37 BFR37 2N4934 BCW60A	Original	PDF	BFW83 2SC997 2N50B2 2SC3122 BFW64 NR421DE NR421DF BF260 BF261 2N50b BCY5B 2SC307B DIODE bon BCW60RD
2SC1393 Abstract: 140-Y Text: ST 2SC1393 NPN Silicon Epitaxial Planar Transistor TV VHF TUNER RF AMPLIFIER FORWARD AGC The transistor is subdivided into three group, RO and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original	PDF	2SC1393 -30dB, 200MHz 200MHz, 2SC1393 140-Y
2SC1393 Abstract: RF POWER TRANSISTOR NPN Text: ST 2SC1393 NPN Silicon Epitaxial Planar Transistor TV VHF TUNER RF AMPLIFIER FORWARD AGC The transistor is subdivided into three group, RO and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original	PDF	2SC1393 -30dB, 200MHz 200MHz, 2SC1393 RF POWER TRANSISTOR NPN
Untitled Abstract: No abstract text available Text: 2SC1395 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)30 I(C) Max. (A)20m Absolute Max. Power Diss. (W)250m Minimum Operating Temp (øC) Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition)	Original	PDF	2SC1395
2SA748 Abstract: transistor 2SC1398 2SC1398 equivalent 2SC1398 Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA748 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -50V(Min) ·Large Power Dissipation: PC= 15W@ TC= 25℃ ·Complement to Type 2SC1398 APPLICATIONS ·Designed for medium power amplifier applications.	Original	PDF	2SA748 2SC1398 -55r-Emitter -500mA; 2SA748 transistor 2SC1398 2SC1398 equivalent 2SC1398
2SA748 Abstract: 2SC1398 2SC1398 equivalent Text: Inchange Semiconductor Product Specification 2SA748 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC1398 ·Large collector power dissipation APPLICATIONS ·For medium power amplifier applicattions PINNING PIN DESCRIPTION	Original	PDF	2SA748 O-220 2SC1398 O-220) 2SA748 2SC1398 2SC1398 equivalent
Untitled Abstract: No abstract text available Text: 2SC1396 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)30 I(C) Max. (A)20m Absolute Max. Power Diss. (W)250m Minimum Operating Temp (øC) Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition)	Original	PDF	2SC1396
2SA748 Abstract: 2SC1398 Text: Product Specification www.jmnic.com 2SA748 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SC1398 ・Large collector power dissipation APPLICATIONS ・For medium power amplifier applicattions PINNING PIN DESCRIPTION	Original	PDF	2SA748 O-220 2SC1398 O-220) 2SA748 2SC1398
Untitled Abstract: No abstract text available Text: 2SC1394 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)20m Absolute Max. Power Diss. (W)250m Minimum Operating Temp (øC) Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition)	Original	PDF	2SC1394 Freq700M
2SA748 Abstract: 2SC1398 equivalent 2SC1398 Text: SavantIC Semiconductor Product Specification 2SA748 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC1398 ·Large collector power dissipation APPLICATIONS ·For medium power amplifier applicattions PINNING PIN DESCRIPTION	Original	PDF	2SA748 O-220 2SC1398 O-220) 2SA748 2SC1398 equivalent 2SC1398
2SC144 Abstract: 2SC2240 2SC1684 2SC1919 2sc1855 2sc763 2SC2839 2sc945 2SC1047 2SC1775A Text: - 126 - m € T y p e No. Manuf. SANYO 3í 2 T O SHIBA B NEC B HITACHI ti S i l F U J ITSU ta t MATSUSHITA m ' h MITSUBISHI □ - A ROHM 2SC 1898 Ü3 r B $ f 2SC2839 2SC1393 2SC1855 2SC1047 2SC1809 2SC 1899 SrBÍS 2SC2839 2SC1393 2SC1855 2SC1047 2SC1809 2SC1845	OCR Scan	PDF	2SC2839 2SC1393 2SC1S55 2SC1047 2SC180S 2SC1855 2SC1809 2SC144 2SC2240 2SC1684 2SC1919 2sc1855 2sc763 2SC2839 2sc945 2SC1047 2SC1775A
2SC1398 Abstract: 2SA748 2SC1398A Text: Power Transistors 2SC1398, 2SC1398A 2SC1398, 2SC1398A Silicon NPN Epitaxial Planar Type Package Dimensions Medium Power Amplifier Complementary Pair with 2SA748 Unit ! mm 10.5 ± 0 . 5 •ax , S : .9.8 max. trt oo_; 7.6min. ■ Feature • L arge collector pow er dissipation Pc	OCR Scan	PDF	2SC1398, 2SCT398A 2SC1398A 2SA748 2SC1398 2SA748 2SC1398A

2SC1398 Abstract: 2SA748 2SC1398A ckfi panasonic 2SA Text: 2SC1398, 2SC1398A Pow er Tra n sisto rs 2 S C 1 3 9 8 , 2 S C 1 3 9 8 A Silicon NPN Epitaxial Planar Type Medium Power Amplifier Complementary Pair with 2SA748 Packagé Dimensions . Unit 10.5± X5 • Feature E 9.8max. • L a rg e c o lle c to r p o w e r d issip a tio n (P c	OCR Scan	PDF	2SC1398 2SC1398A 2SC1398, 2SA748 2SC1398 SC1398 bT32flS2 D01b343 2SA748 2SC1398A ckfi panasonic 2SA
2SC1398 Abstract: 2SC139 2SA748 2SC1398A 2SCI39 Text: Power Transistors 2SC1398, 2SC1398Á 2SC1398, 2SC1398A Silicon NPN Epitaxial Planar Type Packagé Dimensions Medium Power Amplifier Complementary Pair with 2SA748 U nit 1 mm 1 0 .5 ± 0 .5 i.Bmax. « ' *•[ 1.5max. ■ Feature • L a rg e c o lle c to r p o w e r d issip a tio n Pc	OCR Scan	PDF	2SC1398, 2SC1398A 2SA748 2SC1398 ic/ib-10 Tc-25 2SC139 2SA748 2SC1398A 2SCI39
2SC1393 Abstract: 2SC1394 c1393 2sc13 Text: NEC SILICON TRANSISTORS ELECTRON DEVICE 2SC1393,2SC1394 NPN SILICON EPITAXIAL TRANSISTOR 2SC1393 : VHF RF AMPLIFIER 2S C 1394 : VHF MIXER FOR TV TUNER FEATURES PACKAGE DIMENSIONS U nit : mm • Low NF high G pe. NF = 2.0dB TV P . Gpe = 24dB TYP. (f = 200M Hz)	OCR Scan	PDF	2SC1393 2SC1394 2SC1393 200MHz, 2SC1394 c1393 2sc13
2SC1399 Abstract: nt184 Text: NEC NPN SILICON TRANSISTOR ELECTRON DEVICE 2SC1399 D ESCRIPTIO N The 2SC1399 is designed fo r use in driver stage o f A F a m plifier, PACKAGE D IM E N S IO N S and low speed swiching. in millimeters inches FEA TU R ES • High Voltage 5.2 M A X . V q eo	OCR Scan	PDF	2SC1399 2SC1399 nt184
2SD2061 Abstract: 2SD880 2SC782 2SD867 2SD877 2SD797 2S0880 2SC782 TOSHIBA 2Sd 123 tl 2SC783 Text: - m % € tt Manuf. h a m SANYO TOSHIBA m NEC a ti HITACHI * ± FUJITSU a fâ T MA T S U S H I T A £ MITSUBISHI E. □ — A ROHM ¿ou i¿u vn; S ÎL ¿dUd¿0 2SCÍ338 2SD2081 * 2SD 121 H 2SD525 2SC1398 2SD2061 * 2SD 122 0 ÍL a £ 2SD526 2SD1266A 2SD2061	OCR Scan	PDF	2SD121 2SD122 2SD123 2SD124 2SC1398 2SD1266A 2SD1264 2SD525 2SD526 2SD2081 2SD2061 2SD880 2SC782 2SD867 2SD877 2SD797 2S0880 2SC782 TOSHIBA 2Sd 123 tl 2SC783
2SA885 Abstract: 2SC1398 2sc1846 Text: Power Transistors 2SA885 2SA885 Silicon PNP Epitaxial Planar Type Package Dim ensions AF Output Drivers C om plem entary P air with 2 S C 1 8 4 6 • Features • 3W output in com plem entary pair with 2SC1398 • TO-126 package, no insulator needed when fixing to a heat sink	OCR Scan	PDF	2SA885 2SC1846 2SC1398 O-126 ----10mA 2SA885 2SC1398 2sc1846
A744 Abstract: a74s 2SC1398 2SA748 2sc13 Text: PANASONIC INDL/ELEK-CSENI} 75C h ^ J V ? S 9 D \| 1^35654 D O D ò ? 1^ 7 \| T ' i s - l 7 ' 2SA 748 2SA748 '> IJ zi y P N P 2SC1398 ¿ X PN P Epitaxial Planar + /M ed iu m Power Amplifier v / V /C om plem entary Pair with 2SC1398 a Unit ! mm 10.5 + 0.5. 4 8max.	OCR Scan	PDF	2sa748 2SC1398 2SC1398 A744 a74s 2SA748 2sc13
2SC1815 Abstract: 2SC 143 SANYO 2SC114 2SC105A 2SC693 2SC1359 C 2SC1398 2sc1740 2SC1359 2SC309 Text: K tt « Type No. * 2SC 108A * 2 £ $ 2SC 109A M. 2 2SC 1OSA « Manuf. SANYO a b X = TOSHIBA NEC ÌL HITACHI * ± FUJITSU a fé T MATSUSHITA iz 2SC4455 ¡L 2SC3393 2SC 117 a 2SC1398 * 2SC 11« ±L 2SC1398 * * * 2SC 119 Al 2SC 121 * 2SC 122 ' a a a a a 2SC1398	OCR Scan	PDF	2SC105A 2SC108A 2SC109A 2SD1485 2SC309 2SC306 2SC4455 2SC3393 2SC1398 2SC1815 2SC 143 SANYO 2SC114 2SC693 2SC1359 C 2sc1740 2SC1359
2sc1424 Abstract: SC-5-1 2SC1457 2SC1507 2SC1324 2SC1336 2SC1345K 2SC1326 2SC1449 2SC1318A Text: - 104 - m% * * Æ Î § Ta=25tC, ♦ EP(iTc=25‘C fi -t¡ m toi . *^fSU (V) 2SC1318A 2SC1324 2SC1326 2SC1336 2SC1342 2SC1343H 2SC1344 2SC1345 2SC1345K 2SC1359 2SC1360 2SC1360A 2SC1383 2SC1384 2SC1387 2SC1393 2SC1394 2SC1398 2SC1398A 2SC1413 2SC1413A 2SC1413AH	OCR Scan	PDF	2SC1318A 2SC1324 2SC1326 2SC1336 2SC1342 2SC1343H 2SC1344 2SC1345 500MHz 2SC1424 2sc1424 SC-5-1 2SC1457 2SC1507 2SC1324 2SC1345K 2SC1326 2SC1449
Z3M Y Abstract: 2SC1393 Z3M IC e50k 101B Text: Transistors 2SC1393 USHA INDIA LTD ELECTRICAL CHARACTERISTICS (Ta=25°C) Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current D C Current Gain Current Gain-Bandwidth Product	OCR Scan	PDF	2SC1393 700MHz 200MHz 200MHz /--10V Rs-50fÃ Z3M Y 2SC1393 Z3M IC e50k 101B

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2SC139 Datasheets (159)

2SC139 Datasheets Context Search

Untitled

PT8828

2N50b

2SC1393

2SC1393

Untitled

2SA748

2SA748

Untitled

2SA748

Untitled

2SA748

2SC144

2SC1398

2SC1398

2SC1398

2SC1393

2SC1399

2SD2061

2SA885

A744

2SC1815

2sc1424

Z3M Y