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    MIT 2SB837B

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    Bristol Electronics 2SB837B 138
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    K 2SB834

    TRANSISTOR,BJT,PNP,60V V(BR)CEO,3A I(C),TO-220AB
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    Quest Components 2SB834 128
    • 1 $11.97
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    2SB83 Datasheets (127)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB83 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SB83 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SB83 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SB83 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SB83 Unknown Vintage Transistor Datasheets Scan PDF
    2SB83 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB83 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB83 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB83 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SB83 Unknown Cross Reference Datasheet Scan PDF
    2SB830 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB830 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB830 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB830 Unknown Cross Reference Datasheet Scan PDF
    2SB831 Hitachi Semiconductor Silicon PNP Epitaxial Original PDF
    2SB831 Kexin Silicon PNP Epitaxial Original PDF
    2SB831 Renesas Technology Silicon PNP Epitaxial Low frequency power amplifier Original PDF
    2SB831 Renesas Technology Silicon PNP Epitaxial Transistor Original PDF
    2SB831 Renesas Technology Silicon PNP Epitaxial Original PDF
    2SB831 TY Semiconductor Silicon PNP Epitaxial - SOT-23 Original PDF
    ...

    2SB83 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SB831 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Low frequency amplifier. 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25


    Original     		PDF 2SB831 OT-23

    2SD1188

    Abstract: 2SD1144 2SD1170 2SD1184 2SD1116 2SD1156 2SD1182 2SD1123 2SD1131 2SD1146
    Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SD1101 25 6 700 150 150 140 1 150 2SB831 2SD1102 1200 6 4A 50W(Tc=25ºC) 150


    Original     		PDF 2SD1101 2SB831 2SD1102 2SD1103 2SD1104 2SD1105 2SD1106 2SD1107 2SD1108 2SD1109 2SD1188 2SD1144 2SD1170 2SD1184 2SD1116 2SD1156 2SD1182 2SD1123 2SD1131 2SD1146

    2sd880 equivalent

    Abstract: 2SD880, 1.5 power dissipation 2SB834 2SD880 2sD880 TRANSISTOR
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD880 TRANSISTOR NPN TO-220 FEATURES z Low frequency power amplifier z Complement to 2SB834 1. BASE 2. COLLECTOR 3. EMITTER 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF O-220 2SD880 O-220 2SB834 500mA 300mA 2sd880 equivalent 2SD880, 1.5 power dissipation 2SB834 2SD880 2sD880 TRANSISTOR

    2SB834

    Abstract: 2sb834 transistor 2SD880 2sD880 TRANSISTOR
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SB834 TRANSISTOR PNP TO—220 1. BASE FEATURES z Low Collector -emitter saturation voltage VCE(sat)=1.0v(Max)@ IC=-3A,IB=-0.3A z DC current Gain hFE =60-200@ IC=0.5A


    Original     		PDF O-220 2SB834 O--220 2SD880 -500mA -500mA, 2SB834 2sb834 transistor 2SD880 2sD880 TRANSISTOR

    1990 1142

    Abstract: Hitachi DSA0076 2SD1101 2SB831 2SD467
    Text: 2SD1101 Silicon NPN Epitaxial ADE-208-1142 Z 1st. Edition Mar. 2001 Application • Low frequency amplifier • Complementary pair with 2SB831 Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SD1101 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings


    Original     		PDF 2SD1101 ADE-208-1142 2SB831 1990 1142 Hitachi DSA0076 2SD1101 2SB831 2SD467

    2SD4672

    Abstract: Hitachi DSA002756
    Text: 2SD1101 Silicon NPN Epitaxial Application • Low frequency amplifier • Complementary pair with 2SB831 Outline Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 20 V Emitter to base voltage


    Original     		PDF 2SD1101 2SB831 2SD4672 Hitachi DSA002756

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD880 TRANSISTOR NPN TO-220 FEATURES z Low Frequency Power Amplifier z Complement to 2SB834 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF O-220 2SD880 O-220 2SB834 500mA 300mA

    2SB834

    Abstract: No abstract text available
    Text: Transys Electronics L I M I T E D TO-220 Plastic-Encapsulated Transistors 2SB834 TRANSISTOR PNP TO-220 1. BASE FEATURES Power dissipation PCM: 2. COLLECTOR 1.5 W (Tamb=25℃) 3. EMITTER Collector current -3 A ICM: Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range


    Original     		PDF O-220 2SB834 O-220 -50mA, -500mA 2SB834

    2SB831

    Abstract: 2SD1101 2SD467 Hitachi DSA00395
    Text: 2SD1101 Silicon NPN Epitaxial Application • Low frequency amplifier • Complementary pair with 2SB831 Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SD1101 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO


    Original     		PDF 2SD1101 2SB831 2SB831 2SD1101 2SD467 Hitachi DSA00395

    2SB834

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD 2SB834 PNP SILICON TRANSISTOR H I GH V OLT AGE T RAN SI ST OR ̈ DESCRI PT I ON Low frequency power amplifier applications. Lead-Free: 2SB834L Halogen Free: 2SB834G ̈ ORDERI N G I N FORM AT I ON Normal 2SB834-x-T60-K 2SB834-x-TA3-T


    Original     		PDF 2SB834 2SB834L 2SB834G 2SB834-x-T60-K 2SB834-x-TA3-T 2SB834-x-TF3-T 2SB834L-x-T60-K 2SB834L-x-TA3-T 2SB834L-x-TF3-T 2SB834G-x-T60-K 2SB834

    2SB834L

    Abstract: utc 2sb834L 2SB834 2SB83 2sb834 transistor
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB834 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR „ DESCRIPTION Low frequency power amplifier applications. Lead-Free: 2SB834L Halogen Free: 2SB834G „ ORDERING INFORMATION Normal 2SB834-x-T60-K 2SB834-x-TA3-T 2SB834-x-TF3-T


    Original     		PDF 2SB834 2SB834L 2SB834G 2SB834-x-T60-K 2SB834-x-TA3-T 2SB834-x-TF3-T 2SB834L-x-T60-K 2SB834L-x-TA3-T 2SB834L-x-TF3-T 2SB834G-x-T60-K 2SB834L utc 2sb834L 2SB834 2SB83 2sb834 transistor

    Untitled

    Abstract: No abstract text available
    Text: 2SB831 Silicon PNP Epitaxial REJ03G0653-0200 Previous ADE-208-1033 Rev.2.00 Aug.10.2005 Application • Low frequency amplifier • Complementary pair with 2SD1101 Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Emitter 2. Base 3. Collector


    Original     		PDF 2SB831 REJ03G0653-0200 ADE-208-1033) 2SD1101 PLSP0003ZB-A

    UTC2SB834

    Abstract: No abstract text available
    Text: UTC 2SB834 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION Low frequency power amplifier applications. 1 TO-126 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS Operating temperature range applies unless otherwise specified


    Original     		PDF 2SB834 O-126 QW-R204-018 UTC2SB834

    2SB834

    Abstract: 2sb834 equivalent 2sd880 equivalent 2SD880
    Text: Inchange Semiconductor Product Specification 2SB834 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Low collector saturation voltage ・Complement to type 2SD880 APPLICATIONS ・Audio frequency power amplifier PINNING PIN DESCRIPTION 1


    Original     		PDF 2SB834 O-220 2SD880 2SB834 2sb834 equivalent 2sd880 equivalent 2SD880

    mx 2sb834

    Abstract: 2sb834 mx LB125 2sa940 2sc2073 MJE13005 tip41c pins tip127 data REG lm317 IC LM317 DATA SHEET 2SC2073
    Text: TO-220 PACKAGE MX MICROELECTRONICS ● Applied widely for TV,Av,power amplifiers power drive e.c.t. Pd TYPE NPN *Tc= OR 25℃ W PNP 2SA940 2SC2073 2SD880 2SB834 2SD313 BD941 BD949 BD950 BU406 BUT11 BUT11A PNP NPN NPN PNP NPN NPN NPN PNP NPN NPN NPN ICBO


    Original     		PDF O-220 2SA940 2SC2073 2SD880 2SB834 2SD313 BD941 BD949 BD950 BU406 mx 2sb834 2sb834 mx LB125 2sa940 2sc2073 MJE13005 tip41c pins tip127 data REG lm317 IC LM317 DATA SHEET 2SC2073

    2SB831

    Abstract: 2SB831BBTL-E 2SB831BCTL-E 2SD1101 SC-59A
    Text: 2SB831 Silicon PNP Epitaxial REJ03G0653-0200 Previous ADE-208-1033 Rev.2.00 Aug.10.2005 Application • Low frequency amplifier • Complementary pair with 2SD1101 Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Emitter 2. Base 3. Collector


    Original     		PDF 2SB831 REJ03G0653-0200 ADE-208-1033) 2SD1101 PLSP0003ZB-A 2SB831 2SB831BBTL-E 2SB831BCTL-E 2SD1101 SC-59A

    2sD880 TO-220

    Abstract: No abstract text available
    Text: 2SD880 NPN TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features — — Low frequency power amplifier Complement to 2SB834 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO


    Original     		PDF 2SD880 O-220 O-220 2SB834 500mA 300mA 2sD880 TO-220

    2s0880

    Abstract: 2SB83 250880 2SB834 2SD880 e50V 2sD880 TRANSISTOR
    Text: ÆfcMOS PEC NPN SILICON POWER TRANSISTORS NPN .designed for use in audio frequency power amplifier applications 2SD880 FEATURES: * Low Collector-Emitter Saturation Voltage VCE satf 1 0 V (Max @ I c=3.0A,Ib=0.3A * DC Current Gain hFE= 60-300 lc= 0.5A * Complememtary to PNP 2SB834


    OCR Scan     		PDF 2SB834 2SD880 2SD880 2s0880 2SB83 250880 2SB834 e50V 2sD880 TRANSISTOR

    2SB834

    Abstract: 2SD880 2SB83
    Text: V li zi > pnp: m m 2SB834 í 2SB834 ê â ÎD ' S )± f t t e V ' O : V c E ( s a t ) = - l - 0 V ( S * ) ( I c = - 3 A , IB = -0 .3 A ) 3 l' i' m ìlite f t ± ê v>0 2SD 880 t =i > 7” U : P C = 30W (Tc = 25°C) > ? >) iz 4- >3 è t o (Ta = 25°C) JR


    OCR Scan     		PDF 2SB834 2SB834) 2SD880 O-220AB SC-46 2-10A1A -50mA, 2SB834 2SB83

    2SB833

    Abstract: No abstract text available
    Text: SILICON PNP TRIPLE DIFFUSED TYPE 2SB833 INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. FEATURES: . High Collector Current : Ic=-30A • High DC Current Gain : hFE 2 =1000(Min.) (VCE=-5V, Ic =-20A) . Monolithic Construction with Built-In Base-Emitter


    OCR Scan     		PDF 2SB833 2SB833

    Untitled

    Abstract: No abstract text available
    Text: 2SB834 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS L ID . TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER *Compkmntaryto 2SD880 ABSOLUTE MAXIMUM RATINGS a t T airfW fV Characteristic Symbol Rating Vcbo Collector-Base Voltaae


    OCR Scan     		PDF 2SB834 2SD880 -50mA -500mA -300mA -10VIe

    2SB834

    Abstract: No abstract text available
    Text: SILICON PNP TRIPLE DIFFUSED TYPE 2SB834 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. FEATURES: • Low Collector Saturation Voltage : VcE sat =-l-OV(Max.) at Ic=-3A, Ib =-0.3A . Collector Power Dissipation : PC=30W (Tc=25°C) . Complementary to 2SD880. MAXIMUM RATINGS (Ta=25°C)


    OCR Scan     		PDF 2SB834 2SD880. -50mA, 20/taec 100v200 2SB834

    2SB835

    Abstract: 2SB835 R
    Text: 2SB835 2SB835 '> V zi > P N P x 4r'> t * ; u 7 V •^"Jf^/Si P N P Epitaxial Planar Power Amplifier • # » /F e a tu r e s V cE sat VcE(sat) • P S C S i S S t l So M type package suitable for automatic insertion, easier manual inser­ tion, self-standing on PC boad.


    OCR Scan     		PDF 2SB835 Ta-25Â 10/iA, 2SB835 2SB835 R

    Untitled

    Abstract: No abstract text available
    Text: 2SD880 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LID . TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER ♦Conplei I P lary to 2SB834 ABSOLUTE M AXIM UM RATINGS a t Tam h=25V C haracteristic Collector-Base Voltage Collector-Emitter Voltage


    OCR Scan     		PDF 2SD880 2SB834 500mA 300mA