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Toshiba America Electronic Components 2SA1954BTE85LF TRANS PNP 12V 0.5A SC70
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DigiKey	2SA1954BTE85LF	Digi-Reel			1	1 $0.46 10 $0.46 100 $0.46 1000 $0.46 10000 $0.46	Buy Now
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Toshiba America Electronic Components 2SA1954-A(TE85L,F) TRANS PNP 12V 0.5A SC70
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DigiKey	2SA1954-A(TE85L,F)	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now

2SA1954 Datasheets (13)

Part	Manufacturer	Description	Datasheet Type	PDF
2SA1954	Kexin	Silicon PNP Epitaxial	Original	PDF
2SA1954	TY Semiconductor	Silicon PNP Epitaxial - SOT-323	Original	PDF
2SA1954	Unknown	PNP transistor	Scan	PDF
2SA1954	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SA1954	Toshiba	SILICON PNP EPITAXIAL TYPE (PCT PROCESS) TRANSISTOR	Scan	PDF
2SA1954	Toshiba	TRANSISTOR (GENERAL PURPOSE AMPLIFIER, SWITCHING AND MUTING SWITCH APPLICATIONS)	Scan	PDF
2SA1954-A	Toshiba	2SA1954 - TRANSISTOR 500 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR, USM, 2-2E1A, SC-70, 3 PIN, BIP General Purpose Small Signal	Original	PDF
2SA1954A	Toshiba	Silicon PNP Epitaxial Type Transistor	Scan	PDF
2SA1954-A(TE85L,F)	Toshiba	Transistors (BJT) - Single, Discrete Semiconductor Products, TRAN PNP -12V -0.5A USM	Original	PDF
2SA1954-ATE85LF	Toshiba	2SA1954 - Trans GP BJT PNP 12V 0.5A 3-Pin USM T/R	Original	PDF
2SA1954-B	Toshiba	2SA1954 - TRANSISTOR 500 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR, USM, 2-2E1A, SC-70, 3 PIN, BIP General Purpose Small Signal	Original	PDF
2SA1954B	Toshiba	Silicon PNP Epitaxial Type Transistor	Scan	PDF
2SA1954BTE85LF	Toshiba	Transistors (BJT) - Single, Discrete Semiconductor Products, TRANSISTOR PNP USM	Original	PDF

2SA1954 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: SMD Type Product specification 2SA1954 Features Low saturation voltage VCE sat (1) = -15 mV (typ.) Large collector current IC = -500 mA (max) 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage	Original	PDF	2SA1954
2SA1954 Abstract: No abstract text available Text: 2SA1954 シリコンPNPエピタキシャル形 PCT方式東芝トランジスタ 2SA1954 ○ 低周波増幅用 ○ スイッチング用 ○ ミューティング用単位: mm • コレクタ飽和電圧が低い。 : VCE (sat) (1) = −15 mV (標準)	Original	PDF	2SA1954 SC-70 2SA1954
Untitled Abstract: No abstract text available Text: 2SA1954 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1954 General Purpose Amplifier Applications Switching and Muting Switch Application • Unit: mm Low saturation voltage: VCE (sat) (1) = −15 mV (typ.) @IC = −10 mA/IB = −0.5 mA •	Original	PDF	2SA1954
2SA1954 Abstract: HN7G04FU RN1307 Text: HN7G04FU TOSHIBA Multichip Discrete Device HN7G04FU General-Purpose Amplifier Applications Unit: mm Driver Circuit Applications Switching and Muting Switch Applications Q1: 2SA1954 equivalent Q2: RN1307 equivalent Q1 Absolute Maximum Ratings Ta = 25°C Characteristic	Original	PDF	HN7G04FU 2SA1954 RN1307 HN7G04FU
2SA1954 Abstract: No abstract text available Text: 2SA1954 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1954 General Purpose Amplifier Applications Switching and Muting Switch Application • Unit: mm Low saturation voltage: VCE (sat) (1) = −15 mV (typ.) @IC = −10 mA/IB = −0.5 mA •	Original	PDF	2SA1954 2SA1954
2SA1954 Abstract: HN7G04FU RN1307 Text: HN7G04FU TOSHIBA Multichip Discrete Device HN7G04FU General-Purpose Amplifier Applications Unit: mm Driver Circuit Applications Switching and Muting Switch Applications Q1: 2SA1954 equivalent Q2: RN1307 equivalent Q1 Absolute Maximum Ratings Ta = 25°C Characteristic	Original	PDF	HN7G04FU 2SA1954 RN1307 HN7G04FU
2SA1954 Abstract: HN7G04FU RN1307 Text: HN7G04FU TOSHIBA Multichip Discrete Device HN7G04FU General-Purpose Amplifier Applications Unit: mm Driver Circuit Applications Switching and Muting Switch Applications Q1: 2SA1954 equivalent Q2: RN1307 equivalent Q1 Maximum Ratings Ta = 25°C Characteristic	Original	PDF	HN7G04FU 2SA1954 RN1307 HN7G04FU
Untitled Abstract: No abstract text available Text: 2SA1954 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1954 General Purpose Amplifier Applications Switching and Muting Switch Application • Unit: mm Low saturation voltage: VCE (sat) (1) = −15 mV (typ.) @IC = −10 mA/IB = −0.5 mA •	Original	PDF	2SA1954 SC-70
MARKING GB Abstract: hfe-300 smd marking gb 2SA1954 marking GB# Text: Transistors IC SMD Type Silicon PNP Epitaxial 2SA1954 Features Low saturation voltage VCE sat (1) = -15 mV (typ.) Large collector current IC = -500 mA (max) 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage	Original	PDF	2SA1954 MARKING GB hfe-300 smd marking gb 2SA1954 marking GB#
Untitled Abstract: No abstract text available Text: 2SA1954 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1954 General Purpose Amplifier Applications Switching and Muting Switch Application • Unit: mm Low saturation voltage: VCE (sat) (1) = −15 mV (typ.) @IC = −10 mA/IB = −0.5 mA •	Original	PDF	2SA1954
Untitled Abstract: No abstract text available Text: 2SA1954 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1954 General Purpose Amplifier Applications Switching and Muting Switch Application • Unit: mm Low saturation voltage: VCE (sat) (1) = −15 mV (typ.) @IC = −10 mA/IB = −0.5 mA •	Original	PDF	2SA1954 SC-70
2SA1954 Abstract: No abstract text available Text: 2SA1954 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1954 General Purpose Amplifier Applications Switching and Muting Switch Application • Unit: mm Low saturation voltage: VCE (sat) (1) = −15 mV (typ.) @IC = −10 mA/IB = −0.5 mA ·	Original	PDF	2SA1954 2SA1954
lm2804 Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983 Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.	Original	PDF	BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
SSM3J307T Abstract: SSM3J328R SSM3J334R Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g	Original	PDF	200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R

ESM 740 Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126 Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.	Original	PDF	SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
IGBT GT30F124 Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 Text: 東芝半導体製品総覧表 2011 年 1 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	PDF	SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
STF12A80 Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer	Original	PDF	02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
TOSHIBA MG150N2YS40 Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40 Text: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動したり故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入	Original	PDF	050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
GT30F124 Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	PDF	2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
transistor bc 245 Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243	Original	PDF	SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Untitled Abstract: No abstract text available Text: 2SA1954 TO SHIBA 2 S A 1 954 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS G ENERAL PURPOSE AMPLIFIER APPLICATIONS SWITCHING AND MUTING SWITCH APPLICATION • Low Saturation Voltage • Large Collector Current VCE (sat) d )= —15mV (Typ.) @ Iq = —10mA/ Iß = —0.5mA	OCR Scan	PDF	2SA1954 --15mV --10mA/ 500mA 1001EA
2SA1954 Abstract: No abstract text available Text: 2SA1954 TO SH IBA 2 S A 1 954 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm GENERAL PURPOSE AMPLIFIER APPLICATIONS SWITCHING AND MUTING SWITCH APPLICATION 2.1 ¿ 0.1 1.25Ì0.1 ^ Low Saturation Voltage VinO VCET (sat) 1(1)A =A - / l5mV	OCR Scan	PDF	2SA1954 --500mA 2SA1954
Untitled Abstract: No abstract text available Text: TOSHIBA 2SA1954 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 954 GENERAL PURPOSE AM PLIFIER APPLICATIONS SWITCHING AND MUTING SWITCH APPLICATION Low Saturation Voltage VCE (sat) d ) = —15mV (Typ.) @ Iq = —10mA / Iß = -0.5m A Large Collector Current	OCR Scan	PDF	2SA1954 500mA
2SA1954 Abstract: No abstract text available Text: TOSHIBA 2SA1954 2 S A 1 954 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS GENERAL PURPOSE AMPLIFIER APPLICATIONS SW ITCHING A N D M U TIN G SWITCH APPLICATIO N Low Saturation Voltage Large Collector Current VCE (sat) (D = - 15mV (TyP-) @ Iq = —10mA / Ig = —0.5mA	OCR Scan	PDF	2SA1954 --10mA 500mA 961001EAA2 2SA1954

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Toshiba America Electronic Components 2SA1954BTE85LF

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2SA1954 Datasheets (13)

2SA1954 Datasheets Context Search

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2SA1954

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2SA1954

2SA1954

2SA1954

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MARKING GB

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2SA1954

lm2804

SSM3J307T

ESM 740

IGBT GT30F124

STF12A80

TOSHIBA MG150N2YS40

GT30F124

transistor bc 245

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2SA1954

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2SA1954