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    2N60G Price and Stock

    UMW 2N60G

    MOSFET N-CH 600V 2A SOT223
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    DigiKey 2N60G Digi-Reel 2,500 1
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    2N60G Reel 2,500 2,500
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    • 10000 $0.1543
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    2N60G Cut Tape 2,500 1
    • 1 $0.54
    • 10 $0.36
    • 100 $0.54
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    2N60G Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


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    PDF QW-R502-053

    2n60b

    Abstract: 2N60A
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2 Amps, 600/650 Volts N-CHANNEL POWER MOSFET „ 1 TO-220F 1 TO-220F1 FEATURES * RDS ON = 5Ω@VGS = 10V * Ultra Low gate charge (typical 9.0nC) * Low reverse transfer capacitance (CRSS = typical 5.0 pF) * Fast switching capability


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    PDF O-220 O-220F O-220F1 QW-R502-053 2n60b 2N60A

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60-E Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original
    PDF 2N60-E 2N60-E QW-R502-974

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60K-MT Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60K-MT is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


    Original
    PDF 2N60K-MT 2N60K-MT QW-R502-B03

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original
    PDF QW-R502-053

    2n60

    Abstract: 2n60b 2N60A UTC2N60 2n60 MOSFEt DC 2N60 mosfet 2n60 CHARACTERISTICS DIODE 2n60 2N60 UTC 2N60 TO-252
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original
    PDF 2N60L 2N60G QW-R502-053 2n60 2n60b 2N60A UTC2N60 2n60 MOSFEt DC 2N60 mosfet 2n60 CHARACTERISTICS DIODE 2n60 2N60 UTC 2N60 TO-252

    2N60G

    Abstract: 2N60 2N60 TO-251 UTC 2N60L TO-220F utc 2n60l
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220 „ DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original
    PDF O-220 O-220F O-220F1 O-262 O-251 O-252 QW-R502-053 2N60G 2N60 2N60 TO-251 UTC 2N60L TO-220F utc 2n60l

    2N60C

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60-C Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original
    PDF 2N60-C 2N60-C QW-R502-A46 2N60C

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original
    PDF QW-R502-053

    2n60

    Abstract: 2N60G-TN3-R 2N60G UTC2N60 2n60 MOSFEt 2N60 TO-251 UTC
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220 „ DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original
    PDF O-220 O-220F O-220F1 O-262 O-251 O-252 QW-R502-053 2n60 2N60G-TN3-R 2N60G UTC2N60 2n60 MOSFEt 2N60 TO-251 UTC

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance


    Original
    PDF QW-R502-053

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original
    PDF QW-R502-053

    2N60B

    Abstract: 2N60A 2N60 power mosfet 2N60 TO-251 UTC 2n60 2n60 MOSFEt 2N60G 2N60L equivalent utc 2n60l 2n60 equivalent
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2 Amps, 600/650 Volts N-CHANNEL POWER MOSFET „ 1 TO-220F 1 TO-220F1 FEATURES * RDS ON = 5Ω@VGS = 10V * Ultra Low gate charge (typical 9.0nC) * Low reverse transfer capacitance (CRSS = typical 5.0 pF) * Fast switching capability


    Original
    PDF O-220 O-220F O-220F1 QW-R502-053 2N60B 2N60A 2N60 power mosfet 2N60 TO-251 UTC 2n60 2n60 MOSFEt 2N60G 2N60L equivalent utc 2n60l 2n60 equivalent

    2N60E

    Abstract: 600V 2A SOT223 MOSFET N-channel
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60-E Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original
    PDF 2N60-E 2N60-E QW-R502-974 2N60E 600V 2A SOT223 MOSFET N-channel

    UTC2N60L

    Abstract: utc 2n60l 2A600V
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60L Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220F TO-220 „ DESCRIPTION The UTC 2N60L is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


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    PDF 2N60L O-220 O-220F 2N60L O-220F1 O-220F2 QW-R502-472 UTC2N60L utc 2n60l 2A600V

    utc 2n60l

    Abstract: UTC2N60L mosfet D 472
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60L Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N60L is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


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    PDF 2N60L 2N60L QW-R502-472 utc 2n60l UTC2N60L mosfet D 472

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60-CB Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60-CB is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original
    PDF 2N60-CB 2N60-CB QW-R209-071

    2n60 MOSFEt

    Abstract: 2n60 2n60 equivalent 2N60 power mosfet 2N60A CHARACTERISTICS DIODE 2n60 2N60B 2n60l 2N60L equivalent UTC 2N60L
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 1 TO-220 TO-251 „ DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original
    PDF O-220 O-251 O-220F O-220F1 O-252 QW-R502-053 2n60 MOSFEt 2n60 2n60 equivalent 2N60 power mosfet 2N60A CHARACTERISTICS DIODE 2n60 2N60B 2n60l 2N60L equivalent UTC 2N60L

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60-E Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original
    PDF 2N60-E 2N60-E QW-R502-974.

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60-C Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N60-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original
    PDF 2N60-C 2N60-C 2N60L-TA3-T 2N60G-TA3-T 2N60L-TF3-T QW-R502-A46

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  1 1 TO-220F TO-220 DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original
    PDF O-220F O-220 O-220F1 O-262 O-252 O-251 QW-R502-053

    23487

    Abstract: 2N60G3 23472
    Text: Microsemi NPN Transistors Part Number 2N5039 JAN2N5039 JANS2N5039 JANTX2N5039 JANTXV2N5039 2N5038 2N5330 JAN2N5038 JANS2N5038 JANTX2N5038 JANTXV2N5038 2N5672 2N6033 2N6032 2N5758 2N5759 2N5760 2N6671 2N6672 2N6673 2N6835 2N5877 2N5878 2N5632 2N5633 2N5634


    OCR Scan
    PDF STD60 NPN-19 23487 2N60G3 23472