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    2N5934 Search Results

    2N5934 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N5934 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=140 / Ic=30 / Hfe=20-100 / fT(Hz)=30M / Pwr(W)=100 Original PDF
    2N5934 Diode Transistor Silicon Transistors Scan PDF
    2N5934 Diode Transistor Transistor Short Form Data Scan PDF
    2N5934 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N5934 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N5934 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N5934 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5934 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5934 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N5934 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N5934 New England Semiconductor NPN TO-3 Transistor Scan PDF
    2N5934 Silicon Transistor JAN / Consumer / Military / Industrial / Automotive / Hi-Rel Scan PDF
    2N5934 Silicon Transistor Industrial Grade Power Transistors Scan PDF

    2N5934 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2N5934 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N5934 O204AA) 18-Jun-02

    2N5934

    Abstract: No abstract text available
    Text: 2N5934 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N5934 O204AA) 31-Jul-02 2N5934

    Untitled

    Abstract: No abstract text available
    Text: 2N5934 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N5934 O204AA) 16-Jul-02

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


    Original     		PDF 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN

    2SC2128

    Abstract: 2N2773 2N3055C
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CEO Of) PD Max hFE fT ON) Min (HZ) 'CBO t0N r Max Max Max (A) (s) Max (Ohms) 140m 187m 90m 90m 175 140 175 175 175 175 175 140m 175 J 175 J (CE)*at T Oper Package Style (°C)


    Original     		PDF 109T2 SML44311 SDT44311 2N3055C 2N3772C PN5934 2N5934 O-218AA 2SC2128 2N2773

    STRS6307

    Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
    Text: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173


    Original     		PDF 2N3054 2N32741 2N4240 2N4908 2N3054A 2N3766 2N4273 2N4909 2N3055 2N3767 STRS6307 STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020

    IRF250N

    Abstract: ir431 FT4066 IR425 irf205 IR413 IR424 IR430 IR520 ir714
    Text: STI Type: 2N5881 Notes: *BVCBO Polarity: NPN Power Dissipation: 160 Tj: 200 VCEV: 60* VCEO: 60 hFE min: 20 hFE max: 100 hFE A: 6.0 VCE: 1.0 VCE A: 7.0 fT: 4.0 Case Style: TO-204AA/TO-3 Industry Type: 2N5881 STI Type: DTS4067 Notes: Polarity: NPN Power Dissipation: 100


    Original     		PDF 2N5881 O-204AA/TO-3 DTS4067 DTS424 O-204AA/TO-3: DTS425 IRF250N ir431 FT4066 IR425 irf205 IR413 IR424 IR430 IR520 ir714

    Untitled

    Abstract: No abstract text available
    Text: Search Results Part number search for devices beginning "2N5933" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD 2N5933 NPN TO3 100V 30A 20 100 4/20 30MHz


    Original     		PDF 2N5933" 2N5933 30MHz 2N5934" 2N5934 2N6251 2N6260" 2N6260 20MHz

    DTS-425

    Abstract: 2N5929 2N5930 2N5931 2N5932 2N5933 2N5934 2N5935 2N5936 2N5937
    Text: ÖM DIODE TRANSISTOR CO INC NPN TO-aiconid Typ«* PHP Comp a- Vcew sus men VolU) & hFE @IC/VCE (Min-Max @A/V> DE |SÖ4fl35E ODOOia4 3 " IS/b Ice» pd ®Vce ®VCE T c- 2 9 °c T = 1*ao (mA @ V) (Watts) (A ® ») VCEfSAT) ®IC/lB (¥ ® A/A) »BE o ic /vce


    OCR Scan     		PDF Sfi4fl35E T-33-15 Tc-29Â 2N5929 2N5930 2N5931 2N5932 2N5933 2N5934 2N5935 DTS-425 2N5936 2N5937

    IC 8030

    Abstract: 2N6575 10J2 25010 2N6258 2N6580 2N6583 30014 lg 505 2N6249
    Text: NEU ENGLAND SEMICONDUCTOR 51E I m b i b u l a D000tl5b 20? « N E S -7- - 3 & = 2-50 A V ceo sus = 3 5 -50 0 V fi = 0 .2 -5 0 MHz Type No. RNP Comple­ ment VCEO (SUS) (V) Case 8 03 Case 8 0 4 Ic (A) hFE @ IC/VCE {min-max @ A/V) (MAX) -0 / INIPIM T O - 3


    OCR Scan     		PDF bSb4clc13 2N5933d 2N5934d 2N5935d 2N5936d 2N6677 2N6678 2N6686 2N6687 2N6688 IC 8030 2N6575 10J2 25010 2N6258 2N6580 2N6583 30014 lg 505 2N6249

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE le MAX V c e o (SUS) = = TO-3 2-50A 35-500V NPN Power Transistors PNP VCEO (WS) 1C (max) M (A) hFE@ic/Vc* (min-max @ A/V) 40 55 40 55 6 6 6 6 15-45 0 1.5/4 15*4501.5/4 25-75 0 1.5/4 25-75 @1.5/4 40 60 140 60 80 5 15 10


    OCR Scan     		PDF 5-500V 2N3773 2N3788 2N3902 2N4070 2N4071 2N4347 2N4348 2N4913 2N1487

    2N3055

    Abstract: 2n5471 TRANSISTOR 2Sc 2525 2N1487 2N1488 2N1490 2N1702 2N3442 2N3445 MJ2955
    Text: General Transistor Corporation CASE lc M A X V ceo (SUS) TO-3 = 2-50A = 35-500V NPN Power Transistors PNP VCEO M 1C (max) (A) hFE@ic/Vc* (min-m« @ A/V) VCE(SAT) @IC/IB (V @ A/A) V8E @IC/VCE (V @ A/V) 40 55 40 55 6 6 6 6 15-45 @ 1.5/4 15-45 @ 1.5/4 25-75 @1.5/4


    OCR Scan     		PDF 5-500V 2N1487 2N1488 2N14S9 2N1490 2N6677 2N6678 2N6686 2N6667 2N3055 2n5471 TRANSISTOR 2Sc 2525 2N1487 2N1488 2N1490 2N1702 2N3442 2N3445 MJ2955

    Untitled

    Abstract: No abstract text available
    Text: 8254022 SILICON TRANSISTOR CORP NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued Type 2N5733 2N5734 2N5737 2N5738 2N5739 2N5740 2N5741 2N5742 2N5743 2N5744 2N5745 2N5758 2N5759 2N5760 2N5784 2N5785 2N5786 2N5804 2N5805 2N5838 2N5839 2N5840


    OCR Scan     		PDF 2N5733 2N5734 2N5737 2N5738 2N5739 2N5740 2N5741 2N5742 2N5743 2N5744

    DTS410

    Abstract: transistor DTS401 DTS411 2N6575 50700 2N5931 DTS413 DTS430 DTS401 2N5932
    Text: DIO D E T R A N S I S T O R CO INC 04 DE |5fi4ö3SS 0 0 0 0 1 5 4 N P N T O -a tc o n rtn Typ«* 3 T—33-15 PNP Comp a- Vcewsus men Volt* .Ï. hFE @IC/VCE (Min-Max @A/V) IS/b ICEV PD@ @VCE @VCE TC»25°C T =1*80 (mA@V) (Want) (A@V) VCE(SAT) IC/lB (V@A/A)


    OCR Scan     		PDF T-33-15 02O/1 03O/2 DTS410 transistor DTS401 DTS411 2N6575 50700 2N5931 DTS413 DTS430 DTS401 2N5932

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


    OCR Scan     		PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    2n5872

    Abstract: No abstract text available
    Text: •4ö E Ö1331Ö7 » 0D0GM41 SEMELABE ISNLB M^b SEMELAB L T T>r-zr-ei BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Rei Code 2N5741 2N5742 2N5743 2N5744 2N5745 2N5781 2N5782 2N5783 2N5784 2N5785 2N5786 2N5793 2N5794 2N5804 2N5805 2M5838 2N5839 2N5840


    OCR Scan     		PDF 0D0GM41 2N5741 2N5742 2N5743 2N5744 2N5745 2N5781 2N5782 2N5783 2N5784 2n5872

    2N5940

    Abstract: 2N5928 2N597 2N5867 2NXXXX 2n5870 2N6030 2N5733 2N5734 2N5738
    Text: 8254022 S IL IC O N TRANS IS T O R CORP NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued "flö Ô8D 0 0 7 9 6 . DE | f l a S 4 D E S DDDOTTt. 3 ,D . . T - |~~ lc Max Amps VCEO(SUS) Polarity 2N5733 2N5734 2N5737 2N5738 2N5739 NPN NPN PNP PNP


    OCR Scan     		PDF 2N5733 2N5734 2N5737 2N5738 2N5739 2N5740 2N5741 2N5742 2N5743 2N5744 2N5940 2N5928 2N597 2N5867 2NXXXX 2n5870 2N6030

    2N6575

    Abstract: 2N6258 2N6580 2N6249 2N6250 2N6251 2N6257 2N6259 2N6262 2N6276
    Text: NE li ENGLAND SEMICONDUCTOR STE D • b S b H li a OQQQQSb SO? « N E S 'T'-B&'O t NPN TO-3 2-50A V ceo sus) = 35*500V fT = 0.2-50 MHz lc ( M A X ) = VBE @ le/VCE (V @ A/V) PD @ TC = 25 °C VCEO le (SUS) (MAX) hFE @ IC/VCE VCE (SAT) @ IC/ IB (V) (A) (min-max @ A/V)


    OCR Scan     		PDF 2N5933d 2N5934d 2N5935d 2N5936d 2N6677 2N6678 2N6686 2N6687 2N6688 5-500V 2N6575 2N6258 2N6580 2N6249 2N6250 2N6251 2N6257 2N6259 2N6262 2N6276

    BUX 115

    Abstract: 2N2646P bux 42 pnp bux ksp1173 2N5662 2N5663 2N6251 KS6118 KS6121
    Text: TRANSISTORS DE PUISSANCE NPN TRIPLE DIFFUSÉ COMMUTATION RAPIDE power transistors (NPN triplo diffused fast switching) Ui u. JC VcEO lc max. TYPES / lc V c e sat / >c ! 'b Boitier td + tr ts tf Iß s) Case 113= 1£> »13= 113= 1X3= nxy r» x > nxy no r» 0


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 3 7E SEMELAB LTD » • A1331A7 000DQ24 S ISMLB se&m type No. Reliability Polarity Option Package vCEO ■c cont hFE@ VCE/'C 'T PD 2N5861 2N5864 2N5865 2N5867 2N5868 SCREEN HI-REL HI-REL SCREEN SCREEN NPN PNP PNP PNP PNP T039 T039 T039 TO 3 TO 3 100 70 50


    OCR Scan     		PDF A1331A7 000DQ24 2N5861 2N5864 2N5865 2N5867 2N5868 2N5869 2N5870 2N5871