2N5680
Abstract: 2N5679 2N5681 2N5682
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS 2N5679 2N5680 PNP TO-39 2N5681 2N5682 NPN TO-39 These Are High Voltage & High Current, General Purpose Transistors ABSOLUTE MAXIMUM RATINGS.
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ISO/TS16949
2N5679
2N5680
2N5681
2N5682
25deg
2N5680
2N5679
2N5681
2N5682
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2N5680
Abstract: 2N5679 2N5681 2N5682 PNP TO-39
Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS 2N5679 2N5680 PNP TO-39 Boca Semiconductor Corp. BSC 2N5681 2N5682
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2N5679
2N5680
2N5681
2N5682
25deg
gm/500
2N5680
2N5679
2N5681
2N5682
PNP TO-39
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2N5680
Abstract: 2N5679 2N5681 2N5682
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS 2N5679 2N5680 PNP TO-39 2N5681 2N5682 NPN TO-39 These Are High Voltage & High Current, General Purpose Transistors ABSOLUTE MAXIMUM RATINGS.
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2N5679
2N5680
2N5681
2N5682
25deg
2N5680
2N5679
2N5681
2N5682
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2N5680
Abstract: 2N5679 2N5682 2N5681
Text: DATA SHEET 2N5679 2N5681 2N5680 PNP 2N5682 NPN COMPLEMENTARY SILICON HIGH POWER TRANSISTORS JEDEC TO-39 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5679 Series types are complementary silicon high power transistors manufactured by the epitaxial planar process and designed for general-purpose amplifier and switching applications where high voltages
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2N5679
2N5681
2N5680
2N5682
2N5679
100mA,
2N5681
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2N5679
Abstract: 2N5680 2N5681 2N5682
Text: 2N5679 2N5680 SEME LAB MECHANICAL DATA Dimensions in mm inches PNP SILICON TRANSISTORS 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 5 .0 8 (0 .2 0 0 ) ty p . 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) ! 2 .5 4 (0 .1 0 0 ) 0 .6 6 (0 .0 2 6 )
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2N5679
2N5680
2N5679
2N5680
-25mA
-500mA
-50mA
-200mA
-250mA
2N5681
2N5682
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2N5682
Abstract: 2N5682 ST 2n5680 st 2N5680 2N568 2N5681
Text: 2N5681 2N5682 SILICON NPN TRANSISTORS • ■ STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTOR APPLICATIONS GENERAL PURPOSE SWITCHING ■ GENERAL PURPOSE AMPLIFIERS ■ DESCRIPTION The 2N5681, 2N5682 are high voltage silicon epitaxial planar NPN transistors in Jedec TO-39
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2N5681
2N5682
2N5681,
2N5682
2N5680.
2N5682 ST
2n5680 st
2N5680
2N568
2N5681
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DK53
Abstract: dk52 BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD699 BD292 2N5037
Text: Bipolar Transistors Cross Reference INDUSTY STANDARD 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240
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2N3016
2N3021
2N3022
2N3023
2N3024
2N3025
2N3026
2N3055
2N3076
2N3171
DK53
dk52
BU724AS
mje2055
2n3055 replacement
BUX98PI
BD263
BD699
BD292
2N5037
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DK53
Abstract: dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513
Text: BIPOLAR TRANSISTORS CROSS REFERENCE Industry standard 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240
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2N3016
2N3021
2N3022
2N3023
2N3024
2N3025
2N3026
2N3055
2N3076
2N3171
DK53
dk52
2SC4977
MJE102
BD699
2SA1046
BU808DFI equivalent
2n3055 replacement
MJ2955 replacement
BUH513
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BUV48I
Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable
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2N3016
2N3021
2N3022
2N3023
2N3024
2N3025
2N3026
2N3055
2N3076
2N3171
BUV48I
BU808DXI
BD699
buv18a
BD241CFI
transistor 2SA1046
BUW52I
BU808DFI equivalent
BU724AS
2SA1046
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BUL310P
Abstract: smps 100w half bridge BUW89 complementary BUR52 to-39 transistors BUTW92 bd707 application BU508DFI BUH315D BUH515
Text: TRANSISTORS POWER BIPOLAR HORIZONTAL DEFLECTION TYPICAL APPLICATION Device BU808DFI BUH315 BUH315D THD218DHI BU508AFI BU508DFI BUH515 BUH515D S2000AFI THD277HI BUH615D THD215HI THD200FI BUH1015HI BUH1015 BUH1215 BUH2M20AP VCEO VCBO IC Ptot V (V) (A) (W)
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BU808DFI
BUH315
BUH315D
THD218DHI
BU508AFI
BU508DFI
BUH515
BUH515D
S2000AFI
THD277HI
BUL310P
smps 100w half bridge
BUW89
complementary BUR52
to-39 transistors
BUTW92
bd707 application
BU508DFI
BUH315D
BUH515
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jrc386d
Abstract: SN76131N LM1011N ne545b HA1457W X0238CE upc1018c UA78GKC MJ13005 MN8303
Text: ECG/TCG/NTE ECG10 ECG11 ECG12 ECG13 ECG14 ECG15 ECG16 ECG17 ECG18 ECG19 ECG20 ECG21 ECG22 ECG23 ECG24 ECG25 ECG26 ECG27 ECG28 ECG29 ECG30 ECG31 ECG32 ECG33 ECG34 ECG35 ECG36 ECG37 ECG38 ECG39 ECG40 ECG41 ECG42 ECG43 ECG44 ECG45 ECG46 ECG47 ECG48 ECG49 ECG50
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ECG10
ECG11
ECG12
ECG13
ECG14
ECG15
ECG16
ECG17
ECG18
ECG19
jrc386d
SN76131N
LM1011N
ne545b
HA1457W
X0238CE
upc1018c
UA78GKC
MJ13005
MN8303
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2SC429GTM
2SC458
2SC458LG
2SC503
2SC504
2SC510
2SC512
2SC519
2SC520A
2SC594
sn76131
tlo72cp
TOSHIBA 2N3055
M53207P
2N3055 TOSHIBA
KIA7313AP
kia7640ap
LA5530
M5L8155P
TBB1458B
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transistor k 2723
Abstract: 2N5680 WCB411 817 transistor
Text: Philips Semiconductors Preliminary specification Silicon planar epitaxial transistor PHILIPS INTERNATIONAL 2N5680 SbE D • 711DôEt. 0 0 4 5 ^ 2 777 ■ PHIN QUICK REFERENCE DATA SYMBOL 7 “ ”^ PARAMETER CONDITIONS collector-base voltage collector-emitter voltage
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2N5680
-TO-39
711002b
T-27-23
transistor k 2723
2N5680
WCB411
817 transistor
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Untitled
Abstract: No abstract text available
Text: 8 E t l ! Ì M ELECTRO N ICS, INC. COLLECTOR CURRENT = 2 AMPS PNP TYPES Device No 2N3660 2N3661 2N3740 2N3741 2N3774 2N3775 2N3776 2N3777 2N3778 2N3779 2N3780 2N3781 2N3782 2N4234 2N4235 2N4236 2N4387 2N4388 2N4898 2N4899 2N4900 2N5344 2N5345 2N5679 2N5680
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2N3660
2N3661
2N3740
2N3741
2N3774
2N3775
2N3776
2N3777
2N3778
2N3779
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2N5416 MOTOROLA
Abstract: CV8616 2N3501 MOTOROLA 2N5415 MOTOROLA 2N5681 motorola 2N2368 2N3114 2N4033 2N5231 2N4236 MOTOROLA
Text: METAL SMALL-SIGNAL TRANSISTORS continued High-Voltage/High-Current Amplifiers (continued) The following table lists Motorola standard devices that have high Collector-Emitter Breakdown Voltage. Devices are listed in decreasing order of V ( b r ) q e q within each package type.
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BUY49S
BF257
BSW68A
2N3114
2N3501*
BSW67A
N5682
2N5229
2N1613
2N2369
2N5416 MOTOROLA
CV8616
2N3501 MOTOROLA
2N5415 MOTOROLA
2N5681 motorola
2N2368
2N4033
2N5231
2N4236 MOTOROLA
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2N5416 MOTOROLA
Abstract: BSW68A 2N4236 MOTOROLA MM3007 2N3501 MOTOROLA BSS74 MOTOROLA MM4003 2N3114 IR M-5005 2N3495
Text: METAL SMALL-SIGNAL TRANSISTORS continued High-Voltage/High-Current Amplifiers (continued) The following table lists Motorola standard devices that have high Collector-Emitter Breakdown Voltage. Devices are listed in decreasing order of V ( b r ) q e q within each package type.
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BUY49S
BF257
BSW68A
2N3114
2N3501*
BSW67A
N5682
2N5415*
2N3637#
MM4001
2N5416 MOTOROLA
2N4236 MOTOROLA
MM3007
2N3501 MOTOROLA
BSS74 MOTOROLA
MM4003
IR M-5005
2N3495
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transistor A 27611
Abstract: 27611 transistor 27611 power transistor transistor 27611 27611 MPS5551 transistor k74 FTS05550 TL 5551 A 27611
Text: FAIRCHILD SEMICONDUCTOR 3 4 6 96 7 4 F A IR C H IL D A4 S E M IC O N D U C TO R DE | 3 M t 1 L 7 4 DÜ57tQS 840 D 2760S 2N5320/2N5321 2N5322/2N5323 E S r c h T S A Schlum berger Com pany D 1~ T 3 5 -/7 10 Watt NPN-PNP Silicon Power • • • PACKAGE 2N5320
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2N5320/2N5321
2N5322/2N5323
T-33-/7
2N5320,
2N5322,
2N5321,
57W/0
transistor A 27611
27611 transistor
27611 power transistor
transistor 27611
27611
MPS5551
transistor k74
FTS05550
TL 5551
A 27611
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BSW68A
Abstract: 2N4033 2N5680 transistor 2N4033 2N3114 2N3501 2N4237 2N4239 2N5681 BF257
Text: METAL SMALL-SIGNAL TRANSISTORS continued High-Voltage/High-Current Amplifiers (continued) The following table lists Motorola standard devices that have high Collector-Emitter Breakdown Voltage. Devices are listed in decreasing order of V ( b r ) q e q within each package type.
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BUY49S
BF257
BSW68A
2N3114
2N3501*
BSW67A
N5682
BSV16
BC161
2N2904A#
2N4033
2N5680
transistor 2N4033
2N3501
2N4237
2N4239
2N5681
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2N2991
Abstract: 2N2992 2N2993 2N2994 2N3665 2N3766 2N3767 2N3917 2N3918 2N4000
Text: 0043592 A P I ELECTRONICS A P I ELECTRONICS INC 26C 00 2 1 8 I NC lit . DE I OOMBS^a ODODaia ñ COLLECTOR CURRENT = 2 AMPS NPN TYPES - CONTINUED Device No 2N2991 Case T O -5 STUD T O -5 STUD T O -5 STUD TO -5 STUD T O -5 T O -5 T O -66 T O -66 T O -3 TO -3
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2N2991
2N2992
2N2993
2N2994
2N3665
-2n3666
2N3766
2N5680
2N6211
2N6212
2N3767
2N3917
2N3918
2N4000
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Untitled
Abstract: No abstract text available
Text: Small signal Transistors TO-39 Case Continued T Y P E NO. D ESC RIPTIO N VCBO (V ) (V) (V) (MA) @ lc V C E VC E(SA T ) @ ' C h FE v C EO v EB O •CBO ® VC BO <mA) (V) (V ) (V ) <mA) *'CEO *VC ER NF »T (MHz) Cob (P F ) •on (n s) *off (n s) (d B )
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2N4930
2N4931
2N4943
2N4960
2N5681
2N5682
2N5781
2N5782
2N5783
DD02413
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2N3660
Abstract: 2N3661 2N3740 2N3741 2N3774 2N3775 2N3776 2N3777 2N3778 2N3779
Text: y. 8 E u M Ê E L E C T R O N IC S , INC. COLLECTOR CURRENT = 2 AMPS PNP TYPES Device No Case VCBO Volts 2N3660 2N3661 2N3740 2N3741 2N3774 2N3775 2N3776 2N3777 2N3778 2N3779 2N3780 2N3781 2N3782 2N4234 2N4235 2N4236 2N4387 2N4388 2N4898 2N4899 2N4900 2N5344
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2N3660
2N3661
2N3740
2N3741
2N3774
2N3775
2N3776
2N3777
2N3778
2N3779
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2N2369At
Abstract: 2N4237 High-Voltage Amplifiers 2N3546 2N3495 2N4033 MM4001 2N5679 MOTOROLA 2n5680 motorola 2N3114
Text: Metal Small-Signal Transistors The fo llo w ing sele c to r guide ta b le s also indicate th o se M o to ro la sm all-sig nal m etal can transisto rs which are q u a lifie d under C E C C 50000, and M IL-19500 high-rel requirem ents. Devices are availab le to C E C C Levels L, F
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MIL-19500
i2N5415*
2N3637#
MM4001
2N3635
2N3634#
2N3495
2N5680
MM4000
MM5007
2N2369At
2N4237
High-Voltage Amplifiers
2N3546
2N4033
2N5679 MOTOROLA
2n5680 motorola
2N3114
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MM4003
Abstract: 2N4033 2N2905 BC177 2N3495 2N5680 transistor 2N4033 2N3227 2N3506 2N3725
Text: Metal Small-Signal Transistors The fo llo w ing sele c to r guide ta b le s also indicate th o se M o to ro la sm all-sig nal m etal can transisto rs which are q u a lifie d under C E C C 50000, and M IL-19500 high-rel requirem ents. Devices are availab le to C E C C Levels L, F
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MIL-19500
BSV16
BC161
2N2904A#
2N2905AI
BC160
2N29O40
2N2905#
2N2605#
2N3486
MM4003
2N4033
2N2905
BC177
2N3495
2N5680
transistor 2N4033
2N3227
2N3506
2N3725
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2N3303
Abstract: MM8520 2n6431 2n3736 MM420 2n3712 2N4209 2N3252 MOTOROLA 2n914 jantx 2n3506 jan
Text: 6367254 MOTOROLA SC XSTRS/R 80C 7 6 6 9 8 F tIOTOROLA SC -CXSTRS/R F> Âü D Difl t,3b?554 □ D 7 b b cifi 3 Low Frequency — Small-Signal Metal CASE 22-03.TO-18 . CASE 20-03 . TÔr72 Motorola Small-Signal Metal Can Transistors are designed for use as General-Purpose Amplifiers, High-Speed Switches, HighVoltage Amplifiers, Low-Level/Low-Noise Amplifiers, HighFrequency Oscillators, Choppers, and Darlingtons. These de
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MIL-19500
2N3303
MM8520
2n6431
2n3736
MM420
2n3712
2N4209
2N3252 MOTOROLA
2n914 jantx
2n3506 jan
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