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    STMicroelectronics 2N5551RUBT

    Transistor GP BJT NPN 160V 0.5A 4-Pin Case UB Waffle - Bulk (Alt: 2N5551RUBT)
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    Avnet Americas 2N5551RUBT Bulk 29 Weeks, 6 Days 25
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    2N5551RUB Datasheets Context Search

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    marking code RAD SMD Transistor npn

    Abstract: JS55
    Text: 2N5551HR Hi-Rel NPN bipolar transistor 160 V, 0.5 A Datasheet - production data Features 3 1 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 1 2 2 3 TO-18 LCC-3 3 • Hermetic packages • ESCC and JANS qualified 4 1 • Up to 100 krad(Si) low dose rate


    Original
    PDF 2N5551HR 2N5551HR MIL-PRF19500 DocID16935 marking code RAD SMD Transistor npn JS55

    RAD SMD MARKING CODE

    Abstract: 2N5551RUB
    Text: 2N5551HR Hi-Rel NPN bipolar transistor 160 V, 0.5 A Datasheet - production data Features 3 1 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 1 2 2 3 TO-18 LCC-3 • Hermetic packages • ESCC and JANS qualified • Up to 100 krad(Si) low dose rate UB Description


    Original
    PDF 2N5551HR 2N5551HR MIL-PRF19500 DocID16935 RAD SMD MARKING CODE 2N5551RUB