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    2N4865 Datasheets (26)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N4865 API Electronics Short form transistor data Short Form PDF
    2N4865 Diode Transistor Transistor Short Form Data Scan PDF
    2N4865 General Diode Transistor Selection Guide Scan PDF
    2N4865 General Transistor NPN Power Transistors Scan PDF
    2N4865 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N4865 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N4865 Unknown Vintage Transistor Datasheets Scan PDF
    2N4865 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N4865 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N4865 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N4865 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N4865 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N4865 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N4865 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N4865 New England Semiconductor NPN TO-53 / TO-114 Transistor Scan PDF
    2N4865 New England Semiconductor BIPOLAR NPN TRANSISTOR TO-63 Scan PDF
    2N4865 New England Semiconductor NPN Transistors, TO-63 / TO-114 Scan PDF
    2N4865 Pirgo Electronics 50-90 Amp Silicon Planar Power Transistors in TO-114 Scan PDF
    2N4865 Pirgo Electronics Silicon Planar Power Transistors Scan PDF
    2N4865 Pirgo Electronics Low Frequency Silicon Power Transistor Scan PDF

    2N4865 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SDT96302

    Abstract: TO114 SDT96303 transistor 2n4866 2N5250 2N5251 SDT96301 TO-114 C3284 power transistor 2N4866
    Text: Device Type VCEO hFE V Min/Max @ IC (A) 2N4865 2N4866 2N5250 2N5251 SDT96301 SDT96302 SDT96303 SDT96401 SDT96402 SDT96403 SDT96901 SDT96902 SDT96903 80 120 100 150 60 100 140 60 100 140 60 100 140 10/40 10/40 10/40 10/40 10 10 10 10 10 10 10 10 10 70.0 70.0


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    PDF 2N4865 2N4866 2N5250 2N5251 SDT96301 SDT96302 SDT96303 SDT96401 SDT96402 SDT96403 SDT96302 TO114 SDT96303 transistor 2n4866 2N5250 2N5251 SDT96301 TO-114 C3284 power transistor 2N4866

    2N5250

    Abstract: 2N5251 mug 14 431 NIL-S-19500 2N4865 2N5151 FSC5961 2N5250 JAN Xelerated SAA 1006
    Text: I I I IWE-FQUND I HIL-s-19500/380B 4 June 1991 SVPSl!5EDItK MIL-s-19500/180A( SLl 17 Septerber 1968 N2L2TARY SPECIP3CATICN SSN203N3WXUR DSV2CE, TWSISIWR,NPN,S2LIIXN,m TYPES 2N4865,2N5250,2N5251,JAIWX, JAN2’XV, ~ JANS MS s~ification is approvedfor w hy e21 Ceptusxts and lq~cies of the Deprt.uentof Defense.


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    PDF HIL-s-19500/380B MIL-s-19500/180A( SSN203N3WXUR TYPESN4865, N5250, N5251, NIL-S-19500. F3-114) Force-17 koject5961-1222] 2N5250 2N5251 mug 14 431 NIL-S-19500 2N4865 2N5151 FSC5961 2N5250 JAN Xelerated SAA 1006

    2N5251

    Abstract: 2N5250 2N5327 2N3902 2n3996 equivalent transistor 2N2880 2N3418 2N3419 2N3420 2N3421
    Text: Device Type 2N2880 JAN, TX, TXV 2N3418 JAN, TX, TXV 2N3419 JAN, TX, TXV 2N3420 JAN, TX, TXV 2N3421 JAN, TX, TXV 2N3439 JAN, TX, TXV 2N3440 JAN, TX, TXV 2N3740 JAN, TX, TXV 2N3741 JAN, TX, TXV 2N3749 JAN, TX, TXV 2N3846 JAN, TX 2N3847 JAN, TX 2N3902 JAN, TX


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    PDF 2N2880 2N3418 2N3419 2N3420 2N3421 2N3439 2N3440 2N3740 2N3741 2N3749 2N5251 2N5250 2N5327 2N3902 2n3996 equivalent transistor 2N2880 2N3418 2N3419 2N3420 2N3421

    2n4889

    Abstract: 2N4858 TEXAS 2N4418 2sa777 2n4891 2N4917 2SA8150 6ae diode 2N4417 2N6556
    Text: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 25 30 BCX53 MH0816 MH0818 MM4006 M0818 M0818 MM4031 ST4031 BCX53•6 ZTX552 BOW60 NS0204 2SA780AK BSV17·10 BSV17·10 BSV17·10 BSV17·6 BSV17·6 ~l,;X:';HU 35 40 45 50 2SA777 2SA777 B0418 2N6555 2SB1042M


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    2N4858 TEXAS

    Abstract: 2N4872 SIEMENS 5SN 2N4433 Qualidyne 2N4418 transtek 40391 RCA 2N4417 api 560
    Text: POWER SILICON PNP Item Number Part Number I C 15 20 25 35 45 55 60 65 320 300 300 300 400 80M 70M 70M 70M KSA931 2N3468 2S8733 2N6094 8CX69-10 2S8956 8CX69-16 8CX69-25 MPS6651 MPS6651 Samsung See Index NEC Corp JA See Index Siemens Akt Matsushita Siemens Akt


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    PDF O-126 O-126var 2S8549 2S8527 2S8528 2S81217 KSA931 2N3468 2S8733 2N4858 TEXAS 2N4872 SIEMENS 5SN 2N4433 Qualidyne 2N4418 transtek 40391 RCA 2N4417 api 560

    TO114

    Abstract: No abstract text available
    Text: Micmsemi NPN Transistors Pa rt N u m b e r M ic ro s e m i P ackage D iv is io n O u tlin e Type Mil ; Data Î 2N568S 2N5686 2N6322 2N6324 2N6323 2N6325 2N5587 2NS588 2N4865 2N5250 2N4866 2N5251 PPC, PPC, PPC, PPC, PPC, PPC, PPC, PPC, PPC, PPC, PPC, PPC, Inc.


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    PDF 2N568S 2N5686 2N6322 2N6324 2N6323 2N6325 2N5587 2NS588 2N4865 2N5250 TO114

    2N5415

    Abstract: No abstract text available
    Text: p^ [D [yj©Tf -Ætttron ©ä t ä [l Devices. Inc. J A N , J A N T X , J A N T X V P O W E R T R A N S IS T O R S (P L A N A R ] DEVICE TYPE MIL-S19500/ VCEO VOLTS IC (CONT.) AMPS POWER (@TC = 25“C) WATTS CASE TYPE CHIP TYPE 2N2880 2N3418 2N3419 2N3420


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    PDF O-111 O-5/39 O-114 2N5415

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    2N1479

    Abstract: 2N1480 2N1481 2N1482 2N1700 2N5781 2N5782 2N5784 2N5785 2N5786
    Text: "flM NPN TO-39/TO-5 2848352 DIODE TRANSISTOR DE J 2 B M Û 3 S E 0DÜG155 5 C O . I N C 84D 00125 D jr. 3 l-O fT D1QDE TMI\l.515T0ft Cü.if\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area ca ll TO LL FREE 800-526-4581 FA X No. 201-575-5863


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    PDF O-39/TO-5 D00D1SS 515TQft 2N1479 2N1480 2N1481 2N1482 2N1700 2N5784 2N5785 2N5781 2N5782 2N5786

    2N558B

    Abstract: 2N3S49 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3848 2N4002
    Text: General Transistor Corporation CASE TO-63 le max = 20 to 60A V c e o (su s) NPN Power Transistors Typ*No. VCEO (•!*) <v) IC (mu) (A) hFE&C/VCE (min-mi* Q AY) VCE(SAT) QIC/IB (V0A/A) VBE ic/vce (V©A/V) VBE (SAT) ©OB (V0A/V) 2N1936 2N1937 2N3265


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    PDF 0-300V 2N1936 2N1937 2N3265 2N3266 2N5250 2N5251 2N5489 2N5587 2N558B 2N558B 2N3S49 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3848 2N4002

    TO63 package

    Abstract: 2N5250 2N3265 transistor 114 2N5539 2N3150 2N3266 2N3847 2N4002 2N4003
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-63 PACKAGE DEVICE TYPE V ceo sus VOLTS Ic (max) AMPS 1*FE@ Ic/ V ce (min/max @ A/V) VcE(sat) @ I c/I b (V @ A/A) p“ d * WATTS Ìt (MHz) NPN TO-63 2N3265 90 20 25-55@15/2 l@20/2 100 20 2N3266 60 20 20-80@15/3


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    PDF 2N3265 2N3266 2N3846 2N3847 2N4002 2N4003 2N5539 2N6046 2N6047 2N6048 TO63 package 2N5250 transistor 114 2N3150

    2N5251

    Abstract: 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3849 2N4002 TO114
    Text: NEU ENGLAND SEMICON DUC TOR bSbM'îSB 0 0 0 0 0 5 7 5RE T> 14 3 • Ic max = 2 0 to 6 0 A V ceo(sus) = 4 0 to 3 0 0 V fi = 0 .6 to 3 0 MHz IMPN TO-B3 Case 807 ' tc (MAX) (A) hFE @ IC/VCE (min-max @ A/V) 2N1936 2N1937 2N3265 2N3266 60 80 90 60 20 20 20 20


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    PDF 000g05 2N1936 2N1937 2N3265 2N3266 1o05w1o 2n5250 2n5251 2n5489 2n5587 2N5251 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3849 2N4002 TO114

    TFK 404

    Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
    Text: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317


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    PDF 20nttc* 10N12* TFK 404 T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09

    2N2819

    Abstract: 2N3149 2N3150 2N3151 2N5575 2N5587 2N5588 AP1066 AP1068 AP1110
    Text: 0043592 A P I A P I ELECTRONICS ELECTRONICS INC 26C INC Ëb d ÊT| 00240 00435^2 0 *T=‘ 3 3 - .Û I □□□□E4D 1 COLLECTOR CURRENT = 7 0 AMPS N PN TYPES D ev ice No C ase 2N3149 TO114 TO114 TO114 TO114 TO 114 TO114 2N3150 2N3151 A P1068 A P1110 AP1123


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    PDF 2N3149 2N3150 2N3151 AP1068 AP1110 AP1123 2N5250 2N5251 AP1067 AP1091 2N2819 2N5575 2N5587 2N5588 AP1066

    2N5250

    Abstract: TO114 TO114 package nc9c 2N3150 2N4865 2N3149 PG1530 Pirgo Electronics MIL-Q-9850
    Text: • Linear hFE from 100 mA to 90 amps • Low saturation voltage at maximum collector current • High frequency ft = 10 MHz minimum • High voltage, BVceo^ o to 100 volts li ftft > i h FE hFE R 1 NPN Type Package BVc bO B V c e O (s u s ) I 2N3149 T O — 114


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    PDF O-114 O-114 2N3149 2N3150 2N4865 2N5250 TO114 TO114 package nc9c PG1530 Pirgo Electronics MIL-Q-9850

    AP1110

    Abstract: 2N4866 AP1123 2N2819 2N3149 2N3150 2N3151 2N5575 2N5587 2N5588
    Text: 0043592 A P I A P I ELECTRONICS INC _26C 00240 ELEC T RO N IC S INC 2b D-7Î.33.ÛI D E :| Q Q 4 3 S C1S 0000240 1 f COLLECTOR CURRENT = 7 0 AMPS NPN TYPES Device No 2N3149 2N3150 2N3151 AP1068 AP1110 AP1123 Case TO114 TO114 TO114 TO114 TO114 TO 114


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    PDF D043ST2 2N3149 2N3150 2N3151 AP1068 AP1110 AP1123 2N4866 2N5250 2N5251 2N2819 2N5575 2N5587 2N5588

    2NXXXX

    Abstract: SILICON TRANSISTOR CORP 2N3920 2N4211 2N4866 2N3740 2N3741 2N3744 2N3861 2N3746
    Text: I □ 1 ru X 0 CD Q . 2 E o o o o o lo io lo o o CM CM ru cQ o o o o o CO CO CO CO CO O O O LO lo CO LO evi CM O O O O O T“ T T“ T“ C\Ì Z Z Z Z Z CL CL CL CL CL Z Z Z Z Z zzzzz CL CL CL CL CL Z Z Z Z Z zzzzz CL CL CL CL CL Z Z Z Z Z zzzzz Z Z Z Z Z


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    PDF fl2S40a2 2N3740 2N3741 2N3744 O-111 2N3745 2N3746 2N3747 2NXXXX SILICON TRANSISTOR CORP 2N3920 2N4211 2N4866 2N3861

    Untitled

    Abstract: No abstract text available
    Text: Z CL CL CL CL C L Z Z Z Z Z CL CL CL CL CL CL CL CL CL Z Z Z Z Z Q- CL CL CL CL z zzzz Q- CL CL CL CL 2N4910 2N4911 2N4912 2N4913 2N4914 CL CL CL CL CL Z Z Z Z Z CL CL CL CL CL Z Z Z Z Z zzzzz CL CL CL CL CL Z Z Z Z Z zzzzz o o o o o c l cl o dd z zz z ‘


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    PDF O-39/TO-5 2N4910 2N4911 2N4912 2N4913 2N4914 O-114 O-111

    Transistors 2n551

    Abstract: Heat Sink to-39 2N1904 2N5068 2N2995 2N3916 2N3599 2N2951 2N3142 2N3444
    Text: INTEX/ SEflITRÔNICS CORP j e m i E T o 27E D • MôblEHb GD0D2Ö? S discrete devices SEMICONDUCTORS n Sem itronics Corp. 7 ^ - * 2 .7 - silicon transistors cont’d - T - 3 3 O - 0 silicon power transistors rn * Polarity Power Dissipation @ 25°C Watts


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    PDF 2N339 2N339A 2N340 2N340A 2N341 2N341A 2N342 2N342A 2N343 2N343A Transistors 2n551 Heat Sink to-39 2N1904 2N5068 2N2995 2N3916 2N3599 2N2951 2N3142 2N3444

    4010 IC

    Abstract: 2N6062 2N5927 ic 4010 2N4866 50110 TO-114 2N1936 2N1937 2N3266
    Text: NEU ENGLAND SEMICONDU CTOR b S b M ' m D000GS7 m 3 SRE D «NES Ic max — 2 0 to 6 0 A V ceo(sus) = 4 0 to 3 0 0 V fT = 0.6 to 3 0 MHz NPN TÜ-63 Case 807 V ce (sat ) @ IC/lB ( V @ A/A) VBE (SAT) @ IC/lB (V @A/A) VBE @ IC/VCE (V @ A/V) pd @ TC = 100 °C (Watts)


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    PDF 0000G57 2N1936 2N1937 2N3265 102CV2 2N3266 602W2 2N4950 2N5250 507QT7 4010 IC 2N6062 2N5927 ic 4010 2N4866 50110 TO-114 2N1936 2N1937 2N3266

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    PDF 3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    2N3920

    Abstract: 2N648 2N2004 2N2995 2N2202 2N2860 TO11 2N2228 2N29SA 2n4307
    Text: £ ^ I jemitronicr hot line discrete devices TOLL FREE NUMBER 800-777-3960 silicon transistors cont-d silicon small signal transistors choppers Type Polarity Power Dissipation @ 25°C mw tlFE @ lc Tj (°C) BVcbo (volts) HILL (volts) Vet (SAT @ lc (Min.)


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    PDF 2N941* 2N942* 2N943* 2N944* 2N945* 2N946* 2N1676 2N1677 2N1917* 2N1918* 2N3920 2N648 2N2004 2N2995 2N2202 2N2860 TO11 2N2228 2N29SA 2n4307