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    2N2907 T018 Search Results

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    PN 2n2222A

    Abstract: 3n2222 2N2222 2K2222 3N2222A 2N2222-PN2222 ST 2n2222 2K222 pn 2N22 VBB-23
    Text: 2N2222 PN 2 2 2 2 2N2222A PN2222A THE 2N2222, 2N2222A, PN2222, PN2222A ARB NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE FNP TYPE 2N2907, 2N2907A, PN2907, PN2907A RESPECTIVELY.


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    PDF 2N2222 2N2222A PN2222A 2N2222, 2N2222A, PN2222, PN2222A 2N2907, 2N2907A, PN2907Â PN 2n2222A 3n2222 2K2222 3N2222A 2N2222-PN2222 ST 2n2222 2K222 pn 2N22 VBB-23

    2N3350

    Abstract: Thyristor TO39 2N2906 2N2906A 2N2907 2N2907A 2N2914 2N2915 2N2916 2N2917
    Text: Type No. BS/CECC Polarity 2N2906\ CV-0 PN P 2N2906A; PNP 1CV' ° 2N2907 1f f j CV-0 PN P CV-0 PN P 2N2907A 2N2913y1 50002-186 NPN Dual 6 1 3 31 87 37E SEMELAB L T D •c hpE @ VCE & lc Package VCEO cont T018 T018 T018 T018 T077 40 60 -40 60 45 0.6 0.6 0.6


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    PDF ai331 2N2906\ 2N2906A* 2N2907 2N2907A 2N2913y 2N2914\ 2N2915 2N2916 2N2917 2N3350 Thyristor TO39 2N2906 2N2906A 2N2907 2N2914

    2N2907

    Abstract: 2N2907A PN2907 PN2907A pn2222 2n2222 2N2222 2N2222A PN2222 PN2222A pn2907 2n2907
    Text: 2N 2 9 0 7 2 N 2 9 07A PN 2 9 0 7 PN 2907A CASE T0-18 THE 2N2907, 2N2907A, PN2907, PN2907A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE NPN TYPE 2N2222, 2N2222A, PN2222, PN2222A RESPECTIVELY.


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    PDF 2N2907, 2N2907A, PN2907, PN2907A 2N2222, 2N2222A, PN2222, PN2222A 2N2907A 2N2907 PN2907 pn2222 2n2222 2N2222 2N2222A PN2222 pn2907 2n2907

    2N3055E specification

    Abstract: 2N3350 2N3904D 2N3904DCSM 2n2894 2N3680 2N2222ADCSM 2N3347 2N2993 T05 Package
    Text: BS/CECC Type No. Polarity 2N 2906\ CV-0 PNP 2N2906A; PNP 1CV' ° 2N2907 1 f f j CV-0 PNP CV-0 PNP 2N2907A 2N2913y 1 50002-186 NPN Dual '2N3054 >2N3055 / ^2N3055E r rX2N3209 1 ^¿2N3209L / • ° 50004-042 50003-020 50004-XXX 50004-XXX 2N3347 2N3348 2N3349


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    PDF ai331 2N2906\ 2N2906A* 2N2907 2N2907A 2N2913y 2N2914\ 2N2915 2N2916 2N2917 2N3055E specification 2N3350 2N3904D 2N3904DCSM 2n2894 2N3680 2N2222ADCSM 2N3347 2N2993 T05 Package

    V405A

    Abstract: BFR38 2N2907 plastic BFR99 BFY18 BFY64 sgs 2n2907a transistor 2N4033 2N2894 2N3209
    Text: Fairchild Sem iconductors Sem iconductors Silicon Small Signal Transistors P N P High Speed Saturated Switching Transistors Metal Can T018, T039 R E FE R E N C E T A B L E For medium speed - see générai purpose section C H A R A C T E R IS T IC S M A X R A T IN G S


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    PDF BSX29 35322H 2N2894 35323F N2894A 35324D 2N3209 35325B 2N5023 35326X V405A BFR38 2N2907 plastic BFR99 BFY18 BFY64 sgs 2n2907a transistor 2N4033

    2N2368

    Abstract: 2N2475 2n2369 2N2476 2N2220 N2904 2N2218 2N2219 2N2221 2N2222
    Text: NPN SW ITCHING - continued Type Max VcEO lc V mA Max VcE sat at V hFE >C mA >B mA Min at Max 'c mA Switching Times (Max) at f j Min at lc MHz mA toff ns ton ns lc Package Comple­ ment mA 30 1000 0 -35 150 15 40 150 50 50 55* 360* 150 TO-39 2N2218 30 800 0 -4


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    PDF BFY51 2N2218 N2904 2N2219 2N2905 2N2220 2N2221 N2906 2N2222 2N2907 2N2368 2N2475 2n2369 2N2476 N2904

    2N2907A fairchild

    Abstract: 36065E 2N4258 fairchild semiconductors 2N5023 BSX29 2N2894 2N3209 T018 3605SC
    Text: Fairchild Sem iconductors Sem iconductors S ilicon Sm all S ig n a l T ran sisto rs P N P H igh Speed Saturated Sw itching Transistors Metal Can T018, T039 R EFEREN CE T A B L E For medium speed - see générai purpose section C H A R A C T E R I S T IC S


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    PDF BSX29 35322H 2N2894 35323F N2894A 35324D 2N3209 35325B 2N5023 35326X 2N2907A fairchild 36065E 2N4258 fairchild semiconductors T018 3605SC

    2N2222 hfe

    Abstract: 2N2222 chip ztx313 BCY71 2N2218 2N2219 2N2221 2N2222 2N2904 2N2906
    Text: NPN SWITCHING M ax VCE sat| at Max Type V CEO Continued f T Min at h FE at P acksQ S 'c •c •b Min Max •c ton 'c . mA MHz mA ns mA mA 0.35 150 15 40 150 50 150 15 40 0.4 150 15 100 800 0.4 150 15 40 120 30 800 0.4 150 15 100 ZT80 25 500 0 .2 10 2 38 ZT87


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    PDF BFY51 2N2218 2N2904 2N2219 2N2905 2N2221 2N2906 2N2222 2N2907 ZT180 2N2222 hfe 2N2222 chip ztx313 BCY71 2N2904 2N2906

    2N3053 NPN transistor

    Abstract: 2n2917 dual transistor 2N2906AQF 2N2907AQF 2N2917
    Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No 2N2893 2N2894 2N2894A 2N2894ACSM 2N2894AQF 2N2894CSM 2N2894DCSM 2N2895 2N2896 2N2904 2N2904A 2N2904AL 2N2904L 2N2905 2N2905A 2N2905AL 2N2905L 2N2906 2N2906 CECC 2N2906A 2N2906A CECC 2N2906ACSM


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    PDF 250mW 80min 30min 40min 4/30m 10/10m 360mW 2N3053 NPN transistor 2n2917 dual transistor 2N2906AQF 2N2907AQF 2N2917

    2N2894 FAIRCHILD SEMICONDUCTOR

    Abstract: BC253C 2N4258 BC171 2N2907A FAIRCHILD SEMICONDUCTOR bc252b BC107 itt 2N3209 2N5023 BSX29
    Text: Fairchild Sem iconductors Sem iconductors Silicon Small Signal Transistors P N P H igh Speed Saturated Sw itching Transistors M etal C a n T018, T 039 R EFEREN CE T A B L E For medium speed - see générai purpose section C H A R A C T E R I S T IC S M A X R A T IN G S


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    PDF BSX29 35322H 2N2894 35323F N2894A 35324D 2N3209 35325B 2N5023 35326X 2N2894 FAIRCHILD SEMICONDUCTOR BC253C 2N4258 BC171 2N2907A FAIRCHILD SEMICONDUCTOR bc252b BC107 itt

    N706A

    Abstract: 2N2368 2N2475 2N1131 2N1132 2N4037 2N696 2N697 BC107 BC177
    Text: NPN GENERAL PURPOSE - Continued Type 2 N3053 Max Vc b V c e O ic Max VcE sat at ic mA Ib mA 15 V V mA 60 40 700 1 •4 150 V hFE Min Max Min iff at at Pto t at Tamb ic ic = 25°C mA MHz mA mW 50 250 150 100 50 Package Comple­ ment 1000 TO-39 2N4037 2N696


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    PDF N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 N706A 2N2368 2N2475 2N1131 2N1132 2N4037 BC177

    NPN C460

    Abstract: 2N2907 equivalent c496 2N2906 equivalent 2N2905 equivalent 2n2484 complementary 2N2907 t018 C735 BS9300 CV7496
    Text: Metal Can Complementary Pairs Core Drivers | Polarity Maximum ratin ps 2N 3724A 2N 372 5A NPN N PN T039 T0 3 9 50 80 30 50 6 6 1200 1200 100 100 60 60 150 150 1500 1500 25 20 — - 300 300 100 100 0.20 0.26 2N 3244 PN P T0 3 9 40 40 5 1000 500 50 150 750 25


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    PDF 2N3724A 2N3725A 2N3244 BF257 BS9300 2N2219A 2N2221 2N2222 NPN C460 2N2907 equivalent c496 2N2906 equivalent 2N2905 equivalent 2n2484 complementary 2N2907 t018 C735 CV7496

    2n2222

    Abstract: BFY51 2N2905 2N708 ZT187 2N2218 2N2219 2N2221 2N2904 2N2906
    Text: NPN SWITCHING Type V C EO Continued M ax V CE sat| at Max 'c fT Min at h FE at Switching times (Max. at PacksQ S Min M ax •c ton m A MHz m A ns •c mA mA 0.35 150 15 40 150 50 V •b V mA BFY51 30 1000 2N2218 30 800 0.4 150 15 40 2N2219 30 800 0.4 150


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    PDF BFY51 2N2218 2N2904 2N2219 2N2905 2N2221 2N2906 2N2222 2N2907 ZT180 2N2905 2N708 ZT187 2N2904 2N2906

    Untitled

    Abstract: No abstract text available
    Text: SbE m T> ^7057fl NPN SWITCHING Type BFY51 Max V CEO 'c 0 0 0 b ^ 6 ZETEX S E M I C O N D U C T O R S Continued M ax V CE sat at hFE 'b Min M ax 40 V •c V mA mA mA 30 1000 0.35 150 15 041 « Z E T B " F i b S ~ C > j fT Min at at - Switching times (Max.) at


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    PDF 7057fl BFY51 2N2218 2N2904 2N2219 2N2905 2N2221 2N2369A 2N2368 2N2369

    2N2219 2N2905

    Abstract: BF177 BF178 BF338 bf179 BC312 BF337 BFT37 BF336 bc143
    Text: Metal Can Complementary Pairs BV Case A M edium Current Am plifiers &• Sw itches Maximum ratin ps | Device Type Polarity Core Drivers b BV BV hFE1 CBO CEO EBO ICM HFE2 Ic fT min. Ic V V V mA mA min. max. mA min. max. M H z V C E sat) IC Max. ton Max.


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    PDF 2N3724A 2N3725A 2N3244 BF257 BFQ36 BF257/8/9 BFQ37 2N2218 2N2904 2N2218A 2N2219 2N2905 BF177 BF178 BF338 bf179 BC312 BF337 BFT37 BF336 bc143

    Untitled

    Abstract: No abstract text available
    Text: SbE D ^ 7 0 5 7 0 Q Q O b ' m Tfifl • Z E T B T -JT I-Q l ■ PNP SWITCHING ZETEX SEMICONDUCTORS TABLE 4 - SILICON PLANAR MEDIUM AND HIGH SPEED SWITCHING TRANSISTORS The devices show n in this table are characterised for medium and high speed switching applications


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    PDF BSV17 ZT189 2N4036 BFX30 2N2222 2N2218 2N2907 ZT181 ZT182 BCY78

    NPN pnp MATCHED PAIRS 2n2905A 2N2219A

    Abstract: BFR39 BFR80 BFR40 BS9300 BFR81 BC326 BFR79 TIS90 BFR62
    Text: Silect Polarity General Purpose Transistors — Ic up to 800 mA Case Outlines Device Type case outline in brackets 2N3702 2N3703 2N3704 2N3705 2N3706 (1) (1) (1) (1) (1) TIS90 (1) TIS91 (1) PTOT Maximum ratings CEO V Cont IC A pk IC A Free Air @ 25‘C mW


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    PDF BS9365 2N4036 2N4037 BS3365 2N4030 2N4031 NPN pnp MATCHED PAIRS 2n2905A 2N2219A BFR39 BFR80 BFR40 BS9300 BFR81 BC326 BFR79 TIS90 BFR62

    2N2094

    Abstract: 2N2096 2N2916 2N2640 2N2021 2N2914 2N2604 2N2605 2N2639 2N2641
    Text: MfiE D • 0133107 DDG0434 E5b M S N LB se m e la b :SEMELAB LTD T M . V Q / BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Number 2N2604 2N2605 2N2639 2N2640 2N2641 2N2642 2N2643 2N2644 2N2815 2N2816 2N2817 2N2818 2N2819 2N2820 2N2821


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    PDF D0G0434 2N2604 60min 2N2605 150min 2N2639 65min 2N2640 2N2641 2N2094 2N2096 2N2916 2N2021 2N2914

    BCY56

    Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BFY51
    Text: < Type o< OD NPN LOW LEVEL V ceo M ax *c M a x V CE sat| at V mA V 'c mA Min fT at hFE at Continued Pto, at = 2ag * C Iß Min M ax 'c m A MHz mA mW mA Package Comple­ ment 2N3053 60 40 700 1.4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1.5


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    PDF 2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BSY51 BSY52 BC107 BCY56 2N1131 2N1132 2N4037 BC177

    transistor t05

    Abstract: N2907 N2907A 2N3040 t05 transistor 2N2927A 2N2280 2N3064 2N1921 2N3058
    Text: DIODE TRANSISTOR CO INC AM de ! 5flMfl35g D O D O m O 1 | o/ DIODE TRANSISTOR CD.i \ C. (201) 688-0400 • Telex: 139-385 • Outside NY & NJ area call TO LL FR EE 800-526-4581 FAX No. 201-575-5883 SILICON NPN LOW POWER TRANSISTORS DEVICES PKG DEVICES 2N327A


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    PDF 5flMfl35g DETRdf\J515TQR 2N327A N328A 2N329A 2N330 2N726 2N863 2N939 2N945 transistor t05 N2907 N2907A 2N3040 t05 transistor 2N2927A 2N2280 2N3064 2N1921 2N3058

    C495 transistor

    Abstract: c638 transistor EQUIVALENT TRANSISTOR bc108 C756 TRANSISTOR PNP Transistor 2N2222 equivalent C735 transistor c637 transistor transistor c495 TRANSISTOR bc107 current gain c372 transistor
    Text: Metal Can Metal Can Product Variations Low Level General Purpose Am plifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. Device Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads— 38,1mm (1,5in) at a small extra


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    PDF BCW35GP. BS9300 2N2219A 2N2221 2N2222 2N2221A fT018 C495 transistor c638 transistor EQUIVALENT TRANSISTOR bc108 C756 TRANSISTOR PNP Transistor 2N2222 equivalent C735 transistor c637 transistor transistor c495 TRANSISTOR bc107 current gain c372 transistor

    Transistor BC177

    Abstract: 2N697 2N2475 audio BC108 2N1131 2N1132 2N4037 2N696 BC107 BC177
    Text: NPN GENERAL PURPOSE - Continued Type 2 N3053 Vc b Vc e O Max ic Max VcE sat at ic mA Ib mA Min Max 15 50 250 V V mA 60 40 700 1 •4 150 V hFE Min iff at at P tot at Tamb ic ic = 25°C mA MHz mA mW 150 100 50 Package Comple­ ment 1000 TO-39 2N4037 2N696


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    PDF N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 Transistor BC177 2N2475 audio BC108 2N1131 2N1132 2N4037 BC177

    Untitled

    Abstract: No abstract text available
    Text: NPN SWITCHING TABLE 3 - NPN SILICON PLANAR M ED IU M A N D HIGH SPEED SW ITCHING T R A N SIST O R S The d e vice s s h o w n in this table are characterised for medium and high speed sw itchin g applications in C om m ercial, Industrial and M ilitary equipm ents.


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    PDF 2N3262 2N2102 BFX85 BFX84 BCY65E 2N1613 2N2270 BSY95A 2N708 2N2938

    Untitled

    Abstract: No abstract text available
    Text: se m e la b : MfiE D • 0133107 DDG0434 E5b M S N LB SEMELAB LTD TM.VQ/ BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Number 2N2604 2N2605 2N2639 2N2640 2N2641 2N2642 2N2643 2N2644 2N2815 2N2816 2N2817 2N2818 2N2819 2N2820 2N2821 2N2822


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    PDF DDG0434 2N2604 2N2605 2N2639 2N2640 2N2641 2N2642 2N2643 2N2644 2N2815