PN 2n2222A
Abstract: 3n2222 2N2222 2K2222 3N2222A 2N2222-PN2222 ST 2n2222 2K222 pn 2N22 VBB-23
Text: 2N2222 PN 2 2 2 2 2N2222A PN2222A THE 2N2222, 2N2222A, PN2222, PN2222A ARB NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE FNP TYPE 2N2907, 2N2907A, PN2907, PN2907A RESPECTIVELY.
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2N2222
2N2222A
PN2222A
2N2222,
2N2222A,
PN2222,
PN2222A
2N2907,
2N2907A,
PN2907Â
PN 2n2222A
3n2222
2K2222
3N2222A
2N2222-PN2222
ST 2n2222
2K222
pn 2N22
VBB-23
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2N3350
Abstract: Thyristor TO39 2N2906 2N2906A 2N2907 2N2907A 2N2914 2N2915 2N2916 2N2917
Text: Type No. BS/CECC Polarity 2N2906\ CV-0 PN P 2N2906A; PNP 1CV' ° 2N2907 1f f j CV-0 PN P CV-0 PN P 2N2907A 2N2913y1 50002-186 NPN Dual 6 1 3 31 87 37E SEMELAB L T D •c hpE @ VCE & lc Package VCEO cont T018 T018 T018 T018 T077 40 60 -40 60 45 0.6 0.6 0.6
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ai331
2N2906\
2N2906A*
2N2907
2N2907A
2N2913y
2N2914\
2N2915
2N2916
2N2917
2N3350
Thyristor TO39
2N2906
2N2906A
2N2907
2N2914
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2N2907
Abstract: 2N2907A PN2907 PN2907A pn2222 2n2222 2N2222 2N2222A PN2222 PN2222A pn2907 2n2907
Text: 2N 2 9 0 7 2 N 2 9 07A PN 2 9 0 7 PN 2907A CASE T0-18 THE 2N2907, 2N2907A, PN2907, PN2907A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE NPN TYPE 2N2222, 2N2222A, PN2222, PN2222A RESPECTIVELY.
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2N2907,
2N2907A,
PN2907,
PN2907A
2N2222,
2N2222A,
PN2222,
PN2222A
2N2907A
2N2907
PN2907
pn2222 2n2222
2N2222
2N2222A
PN2222
pn2907 2n2907
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2N3055E specification
Abstract: 2N3350 2N3904D 2N3904DCSM 2n2894 2N3680 2N2222ADCSM 2N3347 2N2993 T05 Package
Text: BS/CECC Type No. Polarity 2N 2906\ CV-0 PNP 2N2906A; PNP 1CV' ° 2N2907 1 f f j CV-0 PNP CV-0 PNP 2N2907A 2N2913y 1 50002-186 NPN Dual '2N3054 >2N3055 / ^2N3055E r rX2N3209 1 ^¿2N3209L / • ° 50004-042 50003-020 50004-XXX 50004-XXX 2N3347 2N3348 2N3349
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ai331
2N2906\
2N2906A*
2N2907
2N2907A
2N2913y
2N2914\
2N2915
2N2916
2N2917
2N3055E specification
2N3350
2N3904D
2N3904DCSM
2n2894
2N3680
2N2222ADCSM
2N3347
2N2993
T05 Package
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V405A
Abstract: BFR38 2N2907 plastic BFR99 BFY18 BFY64 sgs 2n2907a transistor 2N4033 2N2894 2N3209
Text: Fairchild Sem iconductors Sem iconductors Silicon Small Signal Transistors P N P High Speed Saturated Switching Transistors Metal Can T018, T039 R E FE R E N C E T A B L E For medium speed - see générai purpose section C H A R A C T E R IS T IC S M A X R A T IN G S
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BSX29
35322H
2N2894
35323F
N2894A
35324D
2N3209
35325B
2N5023
35326X
V405A
BFR38
2N2907 plastic
BFR99
BFY18
BFY64
sgs 2n2907a
transistor 2N4033
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2N2368
Abstract: 2N2475 2n2369 2N2476 2N2220 N2904 2N2218 2N2219 2N2221 2N2222
Text: NPN SW ITCHING - continued Type Max VcEO lc V mA Max VcE sat at V hFE >C mA >B mA Min at Max 'c mA Switching Times (Max) at f j Min at lc MHz mA toff ns ton ns lc Package Comple ment mA 30 1000 0 -35 150 15 40 150 50 50 55* 360* 150 TO-39 2N2218 30 800 0 -4
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BFY51
2N2218
N2904
2N2219
2N2905
2N2220
2N2221
N2906
2N2222
2N2907
2N2368
2N2475
2n2369
2N2476
N2904
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2N2907A fairchild
Abstract: 36065E 2N4258 fairchild semiconductors 2N5023 BSX29 2N2894 2N3209 T018 3605SC
Text: Fairchild Sem iconductors Sem iconductors S ilicon Sm all S ig n a l T ran sisto rs P N P H igh Speed Saturated Sw itching Transistors Metal Can T018, T039 R EFEREN CE T A B L E For medium speed - see générai purpose section C H A R A C T E R I S T IC S
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BSX29
35322H
2N2894
35323F
N2894A
35324D
2N3209
35325B
2N5023
35326X
2N2907A fairchild
36065E
2N4258
fairchild semiconductors
T018
3605SC
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2N2222 hfe
Abstract: 2N2222 chip ztx313 BCY71 2N2218 2N2219 2N2221 2N2222 2N2904 2N2906
Text: NPN SWITCHING M ax VCE sat| at Max Type V CEO Continued f T Min at h FE at P acksQ S 'c •c •b Min Max •c ton 'c . mA MHz mA ns mA mA 0.35 150 15 40 150 50 150 15 40 0.4 150 15 100 800 0.4 150 15 40 120 30 800 0.4 150 15 100 ZT80 25 500 0 .2 10 2 38 ZT87
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BFY51
2N2218
2N2904
2N2219
2N2905
2N2221
2N2906
2N2222
2N2907
ZT180
2N2222 hfe
2N2222 chip
ztx313
BCY71
2N2904
2N2906
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2N3053 NPN transistor
Abstract: 2n2917 dual transistor 2N2906AQF 2N2907AQF 2N2917
Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No 2N2893 2N2894 2N2894A 2N2894ACSM 2N2894AQF 2N2894CSM 2N2894DCSM 2N2895 2N2896 2N2904 2N2904A 2N2904AL 2N2904L 2N2905 2N2905A 2N2905AL 2N2905L 2N2906 2N2906 CECC 2N2906A 2N2906A CECC 2N2906ACSM
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250mW
80min
30min
40min
4/30m
10/10m
360mW
2N3053 NPN transistor
2n2917 dual transistor
2N2906AQF
2N2907AQF
2N2917
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2N2894 FAIRCHILD SEMICONDUCTOR
Abstract: BC253C 2N4258 BC171 2N2907A FAIRCHILD SEMICONDUCTOR bc252b BC107 itt 2N3209 2N5023 BSX29
Text: Fairchild Sem iconductors Sem iconductors Silicon Small Signal Transistors P N P H igh Speed Saturated Sw itching Transistors M etal C a n T018, T 039 R EFEREN CE T A B L E For medium speed - see générai purpose section C H A R A C T E R I S T IC S M A X R A T IN G S
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BSX29
35322H
2N2894
35323F
N2894A
35324D
2N3209
35325B
2N5023
35326X
2N2894 FAIRCHILD SEMICONDUCTOR
BC253C
2N4258
BC171
2N2907A FAIRCHILD SEMICONDUCTOR
bc252b
BC107 itt
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N706A
Abstract: 2N2368 2N2475 2N1131 2N1132 2N4037 2N696 2N697 BC107 BC177
Text: NPN GENERAL PURPOSE - Continued Type 2 N3053 Max Vc b V c e O ic Max VcE sat at ic mA Ib mA 15 V V mA 60 40 700 1 •4 150 V hFE Min Max Min iff at at Pto t at Tamb ic ic = 25°C mA MHz mA mW 50 250 150 100 50 Package Comple ment 1000 TO-39 2N4037 2N696
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N3053
2N4037
2N696
2N1131
2N697
2N1132
BFY51
BC107
BC177
BCY59
N706A
2N2368
2N2475
2N1131
2N1132
2N4037
BC177
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NPN C460
Abstract: 2N2907 equivalent c496 2N2906 equivalent 2N2905 equivalent 2n2484 complementary 2N2907 t018 C735 BS9300 CV7496
Text: Metal Can Complementary Pairs Core Drivers | Polarity Maximum ratin ps 2N 3724A 2N 372 5A NPN N PN T039 T0 3 9 50 80 30 50 6 6 1200 1200 100 100 60 60 150 150 1500 1500 25 20 — - 300 300 100 100 0.20 0.26 2N 3244 PN P T0 3 9 40 40 5 1000 500 50 150 750 25
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2N3724A
2N3725A
2N3244
BF257
BS9300
2N2219A
2N2221
2N2222
NPN C460
2N2907 equivalent
c496
2N2906 equivalent
2N2905 equivalent
2n2484 complementary
2N2907 t018
C735
CV7496
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2n2222
Abstract: BFY51 2N2905 2N708 ZT187 2N2218 2N2219 2N2221 2N2904 2N2906
Text: NPN SWITCHING Type V C EO Continued M ax V CE sat| at Max 'c fT Min at h FE at Switching times (Max. at PacksQ S Min M ax •c ton m A MHz m A ns •c mA mA 0.35 150 15 40 150 50 V •b V mA BFY51 30 1000 2N2218 30 800 0.4 150 15 40 2N2219 30 800 0.4 150
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BFY51
2N2218
2N2904
2N2219
2N2905
2N2221
2N2906
2N2222
2N2907
ZT180
2N2905
2N708
ZT187
2N2904
2N2906
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Untitled
Abstract: No abstract text available
Text: SbE m T> ^7057fl NPN SWITCHING Type BFY51 Max V CEO 'c 0 0 0 b ^ 6 ZETEX S E M I C O N D U C T O R S Continued M ax V CE sat at hFE 'b Min M ax 40 V •c V mA mA mA 30 1000 0.35 150 15 041 « Z E T B " F i b S ~ C > j fT Min at at - Switching times (Max.) at
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7057fl
BFY51
2N2218
2N2904
2N2219
2N2905
2N2221
2N2369A
2N2368
2N2369
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2N2219 2N2905
Abstract: BF177 BF178 BF338 bf179 BC312 BF337 BFT37 BF336 bc143
Text: Metal Can Complementary Pairs BV Case A M edium Current Am plifiers &• Sw itches Maximum ratin ps | Device Type Polarity Core Drivers b BV BV hFE1 CBO CEO EBO ICM HFE2 Ic fT min. Ic V V V mA mA min. max. mA min. max. M H z V C E sat) IC Max. ton Max.
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2N3724A
2N3725A
2N3244
BF257
BFQ36
BF257/8/9
BFQ37
2N2218
2N2904
2N2218A
2N2219 2N2905
BF177
BF178
BF338
bf179
BC312
BF337
BFT37
BF336
bc143
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Untitled
Abstract: No abstract text available
Text: SbE D ^ 7 0 5 7 0 Q Q O b ' m Tfifl • Z E T B T -JT I-Q l ■ PNP SWITCHING ZETEX SEMICONDUCTORS TABLE 4 - SILICON PLANAR MEDIUM AND HIGH SPEED SWITCHING TRANSISTORS The devices show n in this table are characterised for medium and high speed switching applications
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BSV17
ZT189
2N4036
BFX30
2N2222
2N2218
2N2907
ZT181
ZT182
BCY78
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NPN pnp MATCHED PAIRS 2n2905A 2N2219A
Abstract: BFR39 BFR80 BFR40 BS9300 BFR81 BC326 BFR79 TIS90 BFR62
Text: Silect Polarity General Purpose Transistors — Ic up to 800 mA Case Outlines Device Type case outline in brackets 2N3702 2N3703 2N3704 2N3705 2N3706 (1) (1) (1) (1) (1) TIS90 (1) TIS91 (1) PTOT Maximum ratings CEO V Cont IC A pk IC A Free Air @ 25‘C mW
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BS9365
2N4036
2N4037
BS3365
2N4030
2N4031
NPN pnp MATCHED PAIRS 2n2905A 2N2219A
BFR39
BFR80
BFR40
BS9300
BFR81
BC326
BFR79
TIS90
BFR62
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2N2094
Abstract: 2N2096 2N2916 2N2640 2N2021 2N2914 2N2604 2N2605 2N2639 2N2641
Text: MfiE D • 0133107 DDG0434 E5b M S N LB se m e la b :SEMELAB LTD T M . V Q / BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Number 2N2604 2N2605 2N2639 2N2640 2N2641 2N2642 2N2643 2N2644 2N2815 2N2816 2N2817 2N2818 2N2819 2N2820 2N2821
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D0G0434
2N2604
60min
2N2605
150min
2N2639
65min
2N2640
2N2641
2N2094
2N2096
2N2916
2N2021
2N2914
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BCY56
Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BFY51
Text: < Type o< OD NPN LOW LEVEL V ceo M ax *c M a x V CE sat| at V mA V 'c mA Min fT at hFE at Continued Pto, at = 2ag * C Iß Min M ax 'c m A MHz mA mW mA Package Comple ment 2N3053 60 40 700 1.4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1.5
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2N3053
2N4037
2N696
2N1131
2N697
2N1132
BFY51
BSY51
BSY52
BC107
BCY56
2N1131
2N1132
2N4037
BC177
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transistor t05
Abstract: N2907 N2907A 2N3040 t05 transistor 2N2927A 2N2280 2N3064 2N1921 2N3058
Text: DIODE TRANSISTOR CO INC AM de ! 5flMfl35g D O D O m O 1 | o/ DIODE TRANSISTOR CD.i \ C. (201) 688-0400 • Telex: 139-385 • Outside NY & NJ area call TO LL FR EE 800-526-4581 FAX No. 201-575-5883 SILICON NPN LOW POWER TRANSISTORS DEVICES PKG DEVICES 2N327A
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5flMfl35g
DETRdf\J515TQR
2N327A
N328A
2N329A
2N330
2N726
2N863
2N939
2N945
transistor t05
N2907
N2907A
2N3040
t05 transistor
2N2927A
2N2280
2N3064
2N1921
2N3058
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C495 transistor
Abstract: c638 transistor EQUIVALENT TRANSISTOR bc108 C756 TRANSISTOR PNP Transistor 2N2222 equivalent C735 transistor c637 transistor transistor c495 TRANSISTOR bc107 current gain c372 transistor
Text: Metal Can Metal Can Product Variations Low Level General Purpose Am plifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. Device Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads— 38,1mm (1,5in) at a small extra
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BCW35GP.
BS9300
2N2219A
2N2221
2N2222
2N2221A
fT018
C495 transistor
c638 transistor
EQUIVALENT TRANSISTOR bc108
C756 TRANSISTOR
PNP Transistor 2N2222 equivalent
C735 transistor
c637 transistor
transistor c495
TRANSISTOR bc107 current gain
c372 transistor
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Transistor BC177
Abstract: 2N697 2N2475 audio BC108 2N1131 2N1132 2N4037 2N696 BC107 BC177
Text: NPN GENERAL PURPOSE - Continued Type 2 N3053 Vc b Vc e O Max ic Max VcE sat at ic mA Ib mA Min Max 15 50 250 V V mA 60 40 700 1 •4 150 V hFE Min iff at at P tot at Tamb ic ic = 25°C mA MHz mA mW 150 100 50 Package Comple ment 1000 TO-39 2N4037 2N696
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N3053
2N4037
2N696
2N1131
2N697
2N1132
BFY51
BC107
BC177
BCY59
Transistor BC177
2N2475
audio BC108
2N1131
2N1132
2N4037
BC177
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Untitled
Abstract: No abstract text available
Text: NPN SWITCHING TABLE 3 - NPN SILICON PLANAR M ED IU M A N D HIGH SPEED SW ITCHING T R A N SIST O R S The d e vice s s h o w n in this table are characterised for medium and high speed sw itchin g applications in C om m ercial, Industrial and M ilitary equipm ents.
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2N3262
2N2102
BFX85
BFX84
BCY65E
2N1613
2N2270
BSY95A
2N708
2N2938
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Untitled
Abstract: No abstract text available
Text: se m e la b : MfiE D • 0133107 DDG0434 E5b M S N LB SEMELAB LTD TM.VQ/ BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Number 2N2604 2N2605 2N2639 2N2640 2N2641 2N2642 2N2643 2N2644 2N2815 2N2816 2N2817 2N2818 2N2819 2N2820 2N2821 2N2822
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DDG0434
2N2604
2N2605
2N2639
2N2640
2N2641
2N2642
2N2643
2N2644
2N2815
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