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    2N RF TRANSISTOR Search Results

    2N RF TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2N RF TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA TELEPHONE: 979 378-2022 (212)227FAX: (879) 3784880 2N 6083 NPN SILICON RF POWER TRANSISTORS •MAXIMUM RATINGS . . . designed (or 12.5 Voll VHP large-signal power amplifier applications required in military and industrial equipment operating to


    Original     		PDF 227FAX: 225MHz. ove35 2N6083 3N6083

    rf power transistors

    Abstract: TO129 SC2600 2N5774 2N5646 MT-72 package 2N5645 2N5636 2N5924 2N4440
    Text: 62 RF POWER TRANSISTORS TYPE NUMBER O PERATING FREQ UENC Y MHz M IN . POWER O UTPUT (WATTS) M IN . POWER G A IN (dB) VCC PACKAGE TYPE (VO LTS) 200-500 MHz RF POWER TRANSISTORS 2N 5645 2N 4440 2N 5636 470 400 400 4.0 5.0 7.5 6 4.7 7 12.5 28 28 MT-72 TO-60


    OCR Scan     		PDF 2N5645 MT-72 2N4440 2N5636 MT-71 N4040 O-117 2N5774 O-129 2N3733 rf power transistors TO129 SC2600 2N5646 MT-72 package 2N5924

    BFY33

    Abstract: BFY34 BFY46 BFY 39 transistor BFY 34 transistor transistor BFY46 BFY 33 transistor N1613
    Text: BFY33, BFY34 2N 1613 ; BFY46 (2N 1711) Not for new developm ent NPN-Transistors for universal RF application BFY 33, BFY 34 and BFY 46 are d o u b le -d iffu se d planar NPN silicon RF-transistors in a case 5 C 3 DIN 41873 (T O -3 9 ). The co lle cto r is electrically connected to the case.


    OCR Scan     		PDF BFY33, BFY34 BFY46 Q60206-Y33 Q60206-Y34 Q60206-Y46 BFY34, BFY33 BFY34 BFY46 BFY 39 transistor BFY 34 transistor transistor BFY46 BFY 33 transistor N1613

    3733

    Abstract: imo 3 sd1090 2n5635 4l stud SD 1470 TQ-60 2N5016 2N5090
    Text: SGS-THOMSON TELECOM AND DATA COMMUNICATIONS M0Ê @IlLi gîK(S R!10(gi RF & MICROWAVE TRANSISTORS TO-39 TO-60 .380 NARROW 4L STUD .500 4L STUD .380 4L STUD WIDEBAND VHF - UHF CLASS C FOR ECM AND RADIO LINKS APPLICATIONS Type Package PIN SD # 2N 3866 2N 5090


    OCR Scan     		PDF TQ-60 T0-60 15BAL 28/2x100 450SQ4LFL 3733 imo 3 sd1090 2n5635 4l stud SD 1470 TQ-60 2N5016 2N5090

    BFY 34 transistor

    Abstract: transistor BFY46 BFY 39 transistor BFY46 BFY34 BFY33 BFV33 BFY 33 transistor N1613 01BV
    Text: BFY33, BFY34 2N 1613 ; BFY46 (2N 1711) Not for new development NPN-Transistors for universal RF application B FY 33, BFY 34 and BFY 46 are double-diffused planar N PN silicon R F-transistors in a case 5 C 3 D IN 41873 (TO-39). The collector is electrically connected to thecase.


    OCR Scan     		PDF BFY33, BFY34 BFY46 Q60206-Y33 Q60206-Y34 Q60206-Y46 BFY34, BFY 34 transistor transistor BFY46 BFY 39 transistor BFY46 BFY34 BFY33 BFV33 BFY 33 transistor N1613 01BV

    BFY34

    Abstract: BFY 34 transistor transistor BFY46 BFY46 BFY33 Q60206-Y46 1613B
    Text: BFY33, B FY 3 4 2N 1613 ; B FY46 (2N 1711) Not for new development NPN-Transistors for universal RF application BFY 33, BFY 34 and BFY 46 are double-diffused planar NPN silicon R F-transistors in a case 5 C 3 DIN 41873 (TO-39). The collector is electrically connected to thecase.


    OCR Scan     		PDF BFY33, BFY34 BFY46 Q60206-Y33 Q60206-Y34 Q60206-Y46 BFY34 BFY 34 transistor transistor BFY46 BFY46 BFY33 Q60206-Y46 1613B

    BFY34

    Abstract: BFY33 BFY46 transistor BFY46 BFY 34 transistor BFY 39 transistor BFY 33 transistor N1613
    Text: BFY33, B FY 3 4 2N 1613 ; B FY46 (2N 1711) Not for new developm ent NPN-Transistors for universal RF application B FY 33, BFY 34 and BFY 46 are double-diffused planar N PN silicon R F-transistors in a case 5 C 3 D IN 41873 (TO-39). The collector is electrically connected to thecase.


    OCR Scan     		PDF BFY33, BFY34 BFY46 Q60206-Y33 Q60206-Y34 Q60206-Y46 BFY34, BFY34 BFY33 BFY46 transistor BFY46 BFY 34 transistor BFY 39 transistor BFY 33 transistor N1613

    2n3553

    Abstract: 2N3375 2N3632 2N355 TRANSISTOR 2n355 2N3553 RCA npn Epitaxial Silicon zg 2N3632 RCA rca 2n3375 40666
    Text: File No. 386 n n r p /jn RF Power T ran sisto rs UVAUDZ7U 2N 3375 2N 3553 2N 3632 D ivision3*6 40665 RCA 2N3632, 2N3553, 2N3375, 40665 a n d 40666 are e p ita x ia l silico n n-p-n tra n sis to rs of th e “ ov erlay ’* em itter electro d e co n stru ctio n . T hey are intended for u se in


    OCR Scan     		PDF 2N3375 2N3553 2N3632 2N3632, 2N3553, 2N3375, and40666 2N355 TRANSISTOR 2n355 2N3553 RCA npn Epitaxial Silicon zg 2N3632 RCA rca 2n3375 40666

    2N3553 equivalent

    Abstract: vk-200 ferrite choke vk200* FERROXCUBE 2N3553 VK-200 VK200 MM4019 ATC200
    Text: MM4019 silicon PNP SILICON RF POWER TRANSISTOR PNP SILICON RF POWER TRANSISTOR . . . designed for use as complement to NPN 2N 3553 in VH F and UHF amplifier applications for military and industrial equipment. • Power Output - Pout = 2.0 W (Typ) @ Pjn = 0.5 W, f = 400 MHz


    OCR Scan     		PDF MM4019 2N3553 MM4019/2N3553 ATC-200 2N3553 equivalent vk-200 ferrite choke vk200* FERROXCUBE VK-200 VK200 MM4019 ATC200

    transistor RCA 274

    Abstract: rca 628 2N6393 2N6392 TA8751 ta8746 RCA2010 HF-46 TA8752 rca transistor
    Text: File No. 628 RF Power T ran sisto rs Solid State Division RCA2010 2N 6392 2N 6393 10-W, 2-GHz, Emitter-Ballasted Silicon N-P-N Overlay Transistors For Use in M icro w ave Pow er A m p lifie rs , F u n d am e n ta l-F re q u en cy O scillators, and Freq u en cy M u ltip liers


    OCR Scan     		PDF RCA2010 2N6392 2N6393 HF-46 HF-46 H-1796 2N6393) RCA2010, 2N6392) transistor RCA 274 rca 628 2N6393 TA8751 ta8746 TA8752 rca transistor

    bsy62

    Abstract: BSY18 transistor w1w 2N708 2N743 KC-C10 BSY17 BSY62A Transistor 2N708 Q60218-Y17
    Text: B S Y 17, B S Y 18, BSY 62, BSY 63 NPN RF Transistors for switching applications BSY 17, BSY 18, BSY 62 and BSY 63 are double-diffused epitaxial NPN silicon planar RF transistors in a case 1 8A 3 DIN 41876 TO-18 . Their collectors are elec­ trically connected to their cases. Transistor BSY 17 corresponds to type 2N 743,


    OCR Scan     		PDF BSY17, BSY18, 2N743, 2N708. Q60218-Y17 Q60218-Y18 BSY62A Q60218-Y62-A BSY62B Q60218-Y62-B bsy62 BSY18 transistor w1w 2N708 2N743 KC-C10 BSY17 Transistor 2N708 Q60218-Y17

    2N6390

    Abstract: microstripline RCA2003
    Text: File No. 626 RF P o w e r T ra n s is to rs Solid State Division RCA2003 2N 6390 2.5- and 3-W, 2-G Hz, Emitter-Ballasted Silicon N-P-N Overlay Transistors For Use in Microwave Power Am plifiers, Fundam ental-Frequency Oscillators, and Frequency Multipliers


    OCR Scan     		PDF RCA2003 2N6390 RCA2003) 2N6390) 2N6390* 2N6390 microstripline

    BSY17

    Abstract: BSY18 transistor w1w 2N708 BSY62 2N743 BSY62A BSY62B Q60218-Y17 Q60218-Y18
    Text: B S Y 17, B S Y 18, BSY 62, BSY 63 NPN RF Transistors for switching applications BSY 17, BSY 18, B SY 62 and B S Y 63 are double-diffused epitaxial N PN silicon planar RF transistors in a case 1 8 A 3 DIN 41876 TO-18 . Their collectors are elec­ trically connected to their cases. Transistor B S Y 17 corresponds to type 2N 7 4 3 ,


    OCR Scan     		PDF BSY17, BSY18, 2N743, 2N708. Q60218-Y17 Q60218-Y18 BSY62A Q60218-Y62-A BSY62B Q60218-Y62-B BSY17 BSY18 transistor w1w 2N708 BSY62 2N743 Q60218-Y17 Q60218-Y18

    2N 2857

    Abstract: 2N918 2N3600 RF-IF
    Text: JEDEC TRANSISTORS continued c E h *— LiCS. X<a E o n o G "a X co e Uz uo m CM II«j h- @ PACKAGE Nl X 5 f (MHz) a. :> UJ u :> a UJ 1< cc f (MHz) > K cc < —i o PG min (dB) TYPE RF-IF amplifiers/oscillators S _§ Û Q. 2N 707 NPN 25 — 5 6 100 — —


    OCR Scan     		PDF 2N918 2N 2857 2N3600 RF-IF

    transistor rc 3866

    Abstract: transistor 3866 s rc 3866 t 3866 power transistor t 3866 transistor 3866 transistor transistor t 3866 c 3866 transistor transistor 3866 mps1983
    Text: MPS1983 See MPS901 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MPS3866 D ie S o u rc e S a m e as 2N 3866 The RF Line 1C = 400 m A M A X IM U M RATINGS Symbol Value Unit C ollector-Em itter Voltage VCEO 30 Vdc Collector-Base Voltage VCBO 55 Vdc Emitter-Base Voltage


    OCR Scan     		PDF MPS1983 MPS901) MPS3866 transistor rc 3866 transistor 3866 s rc 3866 t 3866 power transistor t 3866 transistor 3866 transistor transistor t 3866 c 3866 transistor transistor 3866 mps1983

    2N6618

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 2N 6618 NPN Silicon High Frequency Transistor . . . designed fo r use in hig h -fre q ue n cy, low *no ise , sm a ll-sign a l, n a rro w and w id e b a n d a m plifiers. Ideal fo r use in m ic ro s trip th in and th ick film app licatio n s.


    OCR Scan     		PDF MIL-S-19500 2N6618

    common emitter amplifier

    Abstract: IG-001
    Text: NPN SILICON RF S M A L L -S IG A L TRANSISTOR MECHANICAL OÖTLIHS gbmbral descriptio n 2N 5179 i s designed f o r use in high g a in , low-noise am p lifier , o s c illa t o r and mixer c i r c u i t s . I t i s a ls o s u ita b le fo r UHF converter a p p lic a tio n s. I t fe a tu re s


    OCR Scan     		PDF 200mW 30CMW TJf25 100MHz 20CHHz 200MHz 500MHz common emitter amplifier IG-001

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON RF S M A L L -S IG A L TRANSISTOR g bm bral d e s c r ip t io n 2N 5179 is designed fo r use in hig h g a in , low -noise a m p lifie r , o s c illa t o r and m ixer c ir c u it s . I t is a ls o s u ita b le fo r DHF co n verter a p p lic a tio n s . I t fe a tu re s


    OCR Scan     		PDF 200mW 100MHz 50ohiss 20GHHz 200MHz 500MHz

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


    OCR Scan     		PDF

    High frequency transistors

    Abstract: RF diodes 2N2708 2n3570 2N918 ZT92 BFY90 2N2102 2N4036 ZT91
    Text: HIGH FREQUENCY T AB LE 7 NPN SILICON PLANAR HIGH FREQUENCY TRANSISTORS The transistors shown in this table are designed for high frequency operation Am plifier and Oscillator applications. This table should be referred to in conjunction w ith the RF Diodes


    OCR Scan     		PDF BFY90 175mW 2N918 2N2708 O1000 2N3571 2N3572 2N2102 2N4036 High frequency transistors RF diodes 2n3570 ZT92 2N4036 ZT91

    2N2708

    Abstract: Ferranti ZT84 ferranti 2N2907a 2N3571 2N3571 NPN BFY90 T018 ZT189 ZT211 ZT86
    Text: NPN LOW NOISE TABLE 5 NPN SILICON PLANAR LOW NOISETRANSISTORS The transistors shown in this table are characterised for lo w noise, low level am plification and are particularly suitable for audio pre-am plifiers as well as universal applications. The devices are listed in order of decreasing Breakdown Voltage V c e o / decreasing Collector


    OCR Scan     		PDF 2N3571 2N3572 2N2102 2N4036 2N2708 Ferranti ZT84 ferranti 2N2907a 2N3571 NPN BFY90 T018 ZT189 ZT211 ZT86

    2N5945

    Abstract: 2N5946 MOTOROLA 2N5946 2N5945 Motorola
    Text: T -33-Æ f MOTOROLA SC X S T R S / R F 4bE D b3b7254 0 0 T m i 2 4 • flôTb MOTOROLA ■ SEMICONDUCTOR 2N5944 2N5945 2N5946 TECHNICAL DATA The RF Line 2 .0 ,4 .0 ,1 0 W - 470 MHz RFPOWER TRANSISTORS NPN SILICON RF POWER TRANSISTORS NPN SILICON . . . designed for 7.0 to 15 Volts, U H F large signal amplifier applica*


    OCR Scan     		PDF b3b7254 2N5944 2N5945 2N5946 VK200 20/4B 56-590-65-3B 2N5946 MOTOROLA 2N5946 2N5945 Motorola

    sd 4093

    Abstract: HF 4093 N 4220 2N4119 4446 transistor ESM 30 2N 4117 4392 2N4118 2N4416
    Text: o n channel field effect transistors — metal case transistors à effet de cham p-canal n — boîtier métal Type 2N 2N 2N 2N 2N 3821 3822 3823 3824 3966 2N 4117 2N 4117 A 2N4118 2N 4118 A 2N4119 2N 4119 A 2N 2N 2N 2N 2N 2N 4220 4220 A 4221 4221 A 4222 4222 A


    OCR Scan     		PDF 2N4118 2N4119 2N5433 sd 4093 HF 4093 N 4220 4446 transistor ESM 30 2N 4117 4392 2N4416

    2N5707

    Abstract: TO128 PACKAGE 2n RF transistor 2N4127 transistor d 5702 Heat Sink to-39 2n4440 2N5687 TO-128 2n4041
    Text: 2N5707 SILICON NPN VH F POWER TRANSISTOR Emitter Isolated from Case Intermodulation Distortion Better Than 30 dB at 25 W P.E.P. Emitter Resistor Stabilised for Class AB S.S.B. Applications mechanical specification TO -128 absolute maximum ratings Tease = 25 °C


    OCR Scan     		PDF 2N5707 O-128 O-117 O-131 O-129 2N5707 TO128 PACKAGE 2n RF transistor 2N4127 transistor d 5702 Heat Sink to-39 2n4440 2N5687 TO-128 2n4041