2SK1389
Abstract: No abstract text available
Text: 2SK1389 N-channel MOS-FET F-III Series 60V > Features - 0,025Ω 50A 125W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier
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2SK1389
2SK1389
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2SK1389
Abstract: 60v 50a dc motor controller circuit SC-65
Text: 2SK1389 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- III SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward transconductance TO-3P Applications Motor controllers General purpose power amplifier
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2SK1389
SC-65
2SK1389
60v 50a dc motor controller circuit
SC-65
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Untitled
Abstract: No abstract text available
Text: 2SK1389 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V) I(D) Max. (A)50 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)
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2SK1389
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Untitled
Abstract: No abstract text available
Text: 2SK1389 N-channel MOS-FET F-III Series 60V > Features - 0,025Ω 50A 125W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier
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2SK1389
150ID
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2SK1389
Abstract: SC-65
Text: 2SK1389 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- III SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward transconductance TO-3P Applications Motor controllers General purpose power amplifier
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2SK1389
SC-65
2SK1389
SC-65
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IRF 548
Abstract: irf 1244 IRF 547 IRF 725 irf 846 IRF 024 fsc 2n7000 IRF 850 irf818 iRF 800
Text: Semiconductor Directory Mfr.Õs Type 13 Price Mfr.Õs Code Page Mfr.Õs Type Mfr.Õs Code Page 0.05 0.28 0.25 0.30 0.22 GIS ONS ONS ONS ONS 812 851 851 849 849 2N5886 2N6027 2N6028 2N6031 2N6035 Price Mfr.Õs Type Mfr.Õs Code Page 2.23 0.24 0.23 3.12 0.39
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1N5333B
1N914
2N5886
30WQ04FN
1N5335B
1SMB15AT3
2N6027
30WQ06FN
1N5336B
2N6028
IRF 548
irf 1244
IRF 547
IRF 725
irf 846
IRF 024
fsc 2n7000
IRF 850
irf818
iRF 800
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2SK1969
Abstract: 2SK1508 2SK2691 2SK2690 2SJ477 2SK2906 TO-220F15 2SK1390 2SK1083 2SK1881
Text: POWER MOS FET Feb-00 Quick Selection Guide F-I series High speed switching F-II series FAP-II series High speed switching Avalanche rated FAP-IIA series Low-on resistance Low typical capacitance F-III series P channel Avalanche rated F-III series FAP-III series
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Feb-00
2SK2248
2SK2249
2SK2048
O-220F15
2SK2808
2SK2890
2SK2689
2SK2891
2SK2893
2SK1969
2SK1508
2SK2691
2SK2690
2SJ477
2SK2906
TO-220F15
2SK1390
2SK1083
2SK1881
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Untitled
Abstract: No abstract text available
Text: MOSFETs F-lll Series - Logic Level Operation, Low R ds ON 30-150 Volts Maximum Ratinas Device Type V dss (V) 2SK1505MR 2SK2048L.S 2SK1388 2SK1083MR 2SK1096MR 2SK1086MR 2SK1881L.S 2SKl387MR " IS K iW " — '2SK1B56 ; 2SK1389 2SK1390R 2SK2049 2SK1087MR 2SK1817MR
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2SK1505MR
2SK2048L
2SK1388
2SK1083MR
2SK1096MR
2SK1389
2SK1390R
2SK2049
2SK1087MR
2SK1817MR
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2SK1083MR
Abstract: 2SK1086MR 2SK1096MR 2SK1387MR 2SK1388 2SK1505MR 2SK1881L 2SK2048L 2sk1506
Text: MOSFETs F-lll Series - Logic Level Operation, Low R d s o n 3 0 - 1 5 0 Volts Device Type Maximum Ratinas V dss (V) Pd (W) Id (A ) 2SK1505MR 2SK2048L.S 2SK1388 2SK1083MR 2SK1096MR 2SK1086MR 2SK1881L.S 2SK1387MR 2SK1089 2SK1508 2SK1389 2SK1390R 2SK2049
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2SK1505MR
T0220F15
2SK2048L
2SK1388
T0-220
2SK1083MR
T0-220F15
2SK1096MR
2SK1086MR
2SK1387MR
2SK1881L
2sk1506
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A2203
Abstract: A-2203 2SK1389 H150 SC-65
Text: 2SK1389 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F - III S E R I E S lOutline Drawings • Features • High current • Low on-resistance • No secondary breakdown • Low driving power • High forward Transconductance ■Applications • Motor controllers
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OCR Scan
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2SK1389
SC-65
A2203
A-2203
2SK1389
H150
SC-65
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TO-220F15
Abstract: 2630 2SK1388 2SK2248-01L 2SK1083MR 2SK1086MR 2SK1096MR 2SK1387MR 2SK1505MR 2SK1508
Text: MOSFETs F-lll Series - Logic Level Operation, Low R d s o n 3 0 - 1 5 0 Volts Device Type Maximum Ratinas V dss (V) Pd (W) Id ( A ) 2SK1505MR 2SK2048L.S 2SK1388 2SK1083MR 2SK1096MR 2SK1086MR 2SK1881L.S 2SK1387MR 2SK1089 2SK1508 2SK1389 2SK1390R 2SK2049
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2SK1505MR
O-220F15
2SK2048L
2SK1388
O-220
2SK1083MR
2SK1096MR
2SK1086MR
TO-220F15
2630
2SK2248-01L
2SK1387MR
2SK1508
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Untitled
Abstract: No abstract text available
Text: MOSFETs F-lll Series - Logic Level Operation, Low R d s o n 30 -150 Volts Ma ximumRatinas P d (W) V dss (V) Id (A) Device Type 2SK1505MR 2SK2048L.S 2SK1388 2SK1083MR 2SK1096MR 2SK1086MR 2SK1881L.S 2SK1387MR 2SK1089 2SK15Q8 2SK1389 2SK1390R 2SK2049 2SK1087MR
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2SK1089
2SK15Q8
2SK1389
2SK1390R
2SK2049
2SK1087MR
2SK1817MR
2SK2446-01
2SK2050
2SK1506
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LS 2025
Abstract: No abstract text available
Text: <§ MOSFETs F-lll Series - Logic Level Operation, Low R d s ON 3 0 - 1 5 0 Volts Device Type 2SK1505MR 2SK2048L.S 2SK1388 2SK1083MR 2SK1096MR 2SK1086MR 2SK1881L.S 2SK1387MR 2SK1089 2SK1508 2SK1389 2SK1390R 2SK2049 2SK1087MR 2SK1817MR 2SK2446 L.S 2SK2050
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2SK1505MR
2SK2048L
2SK1388
2SK1083MR
2SK1096MR
2SK1086MR
2SK1881L
2SK1387MR
2SK1089
2SK1508
LS 2025
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Untitled
Abstract: No abstract text available
Text: F U JI 2SK1389 N-channel MOS-FET F-lll S e rie s 60V > Features - 0,025£2 50A 125W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance > Applications - Motor Control General Purpose Power Amplifier
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2SK1389
252C2J
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A2203
Abstract: A-2203
Text: 2SK1389 FUJI POWER M OS-FET N-CHANNEL SILICON POWER MOS-FET F - III S E R I E S lO u tlin e D raw ings • Features • High current 4.5*^ • Low orvresistance 15.5 2 • No secondary breakdown • Low driving pow er ■a • High forw ard Transconductance
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2SK1389
SC-65
A2203
A-2203
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T0220F
Abstract: 2sk1512 2SK1217 2SK1511 T0-220F 2SK1084 2SK1388 2MI200F-025 2sk1018 2SK1390
Text: 22307^2 ODGISTT OTT « C O L COLLHER SEMICONDUCTOR INC MÛE » •v-m-yy MUSFETS s F-ll SERIES (toff 30% REDUCED, VGS=30V (cont’d.) Device Type 2SK1082 2SK962 2SK1217 2SK1512 2SK1511 R atings Id (A) V dss OO 900 900 900 900 1000 C h aracteristics (Tc=25°C)
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2SK1082
2SK962
2SK1217
T03PF
2SK1512
2SK1511
2SK1008-01
T0220
2SK1010-01
T0220F
T0-220F
2SK1084
2SK1388
2MI200F-025
2sk1018
2SK1390
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2SK1171
Abstract: 900 v 9 amp mosfet 2SK1015 2SK726 2SK1511 2SK1222 j545 2SK1018 2SK9 2SK151
Text: COLLMER SEMI CO NDUC TO R INC 34E » . • 25307^2 Ü001SS7 1 « C O L " T '' 3>°\ - 3 IIU JM M S O E Power MOSFET Advantages: . F-l Series . F-ll Series Low RDS (on V G S + /- 30V Reduced turn off time High avalanced ruggedness VG S + /- 30V, Reduced turn
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001SS7
25-35kg
2SK1171
900 v 9 amp mosfet
2SK1015
2SK726
2SK1511
2SK1222
j545
2SK1018
2SK9
2SK151
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2SK1383
Abstract: 2SK1380 IM 337 2SK1379 2SK1388 IM617 2SK1381 2SK1390 2SK1382 2SK1384
Text: - 100 - m % *± £ & m ft it f € t ? * K Ü A V fé Ê V* I* * ft * (V) (A) 5 X ft P d /P ch <K) Igss (max) (A) Vg s (V) m M Id s (min) (max) Vd s (A) (A) (V) (Ta=25cC) 'te (min) (max) Vd s (V) (V) (V) £m (min) (typ) Vd s (S) (S) (V) Id (A) Id (A)
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2SK1379
2SK1380
2SK1381
2SK1382
2SK1383
100nstyp
2SK1400
2SK1400A
155nstyp
2SK1383
IM 337
2SK1379
2SK1388
IM617
2SK1381
2SK1390
2SK1384
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2SK100
Abstract: 2SK2765 2SK2029-01LS 2sk1936 2SK1940 2sk2761 2SK196 2SK2082 2SK1082 2SK182
Text: MOSFET QUICK REFERENCE GUIDE -30V to 450V BY PACKAGE TYPE F-l: P A G E 11 FA P-IIA : FA P-I: P A G E 11 FA P-IIS : F-ll: P A G E 11 F-lll: FA P-II: P A G E 12 SU R FA C E MOUNT FA P-III: P A G E 15 FA P-IIIA A U TO : P A G E 16 FA P-IIIB : P A G E 16 F-V:
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T0-220
T0-220F15
2SJ472-01L
2SJ314-01L
2SJ473-01L
2SK2248-01L
2SK1942-01
2SK2770-01
2SK2528-01
2SK1944-01
2SK100
2SK2765
2SK2029-01LS
2sk1936
2SK1940
2sk2761
2SK196
2SK2082
2SK1082
2SK182
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6DI15S-050
Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Text: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140
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1D500A-030
1DI200E-055
1DI200K-055
1DI200M-120
1DI200MA-050
1DI200Z-100
1DI200Z-120
1DI200ZN-120
1DI200ZP-120
1DI300M-050
6DI15S-050
1MB1400N-120
6D130Z-120
ENC471
2sk2850
2sk2761
ESJA58-06A
1MBH-60D
1mbh60d-090a
6DI15S050
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2sk1005
Abstract: T0-220F T0220F 2sk1010 2SK1011 2sk1217 2SK1105 2SK956 2SK1084 2sk1101
Text: COLLMER SEMICONDUCT OR INC 34E » . • 25307^2 Ü001SS7 1 ■ COL "’’’P 3>°\ - 3 @U>(MsffO§OE Power MOSFET Advantages: • F-l Series • F-ll Series Low RDS (on V G S + /- 30V Reduced turn off time High avalanced ruggedness V G S + /- 30V, Reduced turn
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001SS7
CT03P
t-39-13
2MI50F-050
2MI50S-050
2MI100F-025
2MI100F-050
2MI200F-025
6MI15FS-050
6MI20FS-025
2sk1005
T0-220F
T0220F
2sk1010
2SK1011
2sk1217
2SK1105
2SK956
2SK1084
2sk1101
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2SK962
Abstract: T03P 2MI200F-025
Text: COLLHER SEMICONDUCTOR INC 22367^2 OOGIS?^ OTT « C O L 4ÔE » MOSFETS <§ F-ll SERIES toff 30% REDUCED, VGS=30V (cont’d.) Device Type 2SK1082 2SK962 2SK1217 2SK1512 2SK1511 Ratings lo (A) Vdss(V) 900 900 900 900 1000 Characteristics (Tc=25°C) Sis(S)
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2SK1082
2SK962
2SK1217
2SK1512
2SK1511
T03PF
2SK1008-01
2SK1010-01
2SK1012-01
2SK1014-01
T03P
2MI200F-025
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2SK2652
Abstract: 2SK2771-01R
Text: MOSFET QUICK REFERENCE GUIDE -30V to 300V BY PACKAGE TYPE F-l: Page 30 FAP-IIA: Page 32 FAP-IIIA: Page 34 FAP-I: Page 30 FAP-IIS: Page 33 FAP-IIIB: Page 35 F-ll: Page 30 F-lll: Page 34 FAP-IIIBH: Page 35 FAP-II: Page 31 FAP-III: Page 34 F-V: Page 35 SURFACE MOUNT
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F8006N
F7007N
2SJ472-01L
T0-220
2SJ314-01L
2SJ473-01L
2SJ474-01L
2SJ476-01L
2SK2760-01R
2SK2148-01R
2SK2652
2SK2771-01R
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90T03P
Abstract: 2SK956 10002 2SK906A 2SK1082 t009 2SK1388 2SK1661 2SK900 FUJI Semiconductors
Text: P U H STLdEOTiSDE COLLHER SEMICONDUCTOR INC 4ÔE D • 553Ô7TE GG01ÔD2 Db4 ■ COL T 3 > < V > Power MOSFET Advantages: • F-l Series Low RDS on • F-ll Series VGS +/- 30V Reduced turn off time . FAP-II Series High avalanche ruggedness VGS +/- 30V, Reduced turn
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FAP-11
T03PF
2SK957-01
T0220F
2SK958-01
T0220
2SK959-01
2SK1548-01
2SK1024-01
90T03P
2SK956
10002
2SK906A
2SK1082
t009
2SK1388
2SK1661
2SK900
FUJI Semiconductors
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