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    2SJ29 Search Results

    2SJ29 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    2SJ292-E Renesas Electronics Corporation Pch Single Power Mosfet -60V -30A 43Mohm To-220Ab Visit Renesas Electronics Corporation
    2SJ295-E Renesas Electronics Corporation Pch Single Power Mosfet -60V -30A 43Mohm To-220Fm Visit Renesas Electronics Corporation
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    2SJ29 Price and Stock

    Rochester Electronics LLC 2SJ297-91L

    P-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SJ297-91L Bulk 83
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    • 100 $4.27
    • 1000 $4.27
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    Rochester Electronics LLC 2SJ296STL-E

    P-CHANNEL POWER MOSFET
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    DigiKey 2SJ296STL-E Bulk 69
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    • 100 $4.38
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    Renesas Electronics Corporation 2SJ296STL-E

    SILICON P-CHANNEL MOS FET
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    Verical 2SJ296STL-E 1,000 73
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    • 100 $4.95
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    Rochester Electronics 2SJ296STL-E 1,000 1
    • 1 $4.21
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    • 100 $3.96
    • 1000 $3.58
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    Renesas Electronics Corporation 2SJ297-91L

    2SJ297-91L
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    Verical 2SJ297-91L 83 75
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    • 100 $4.825
    • 1000 $4.3625
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    Rochester Electronics 2SJ297-91L 83 1
    • 1 $4.11
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    • 100 $3.86
    • 1000 $3.49
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    Taiwan Semiconductor 2SJ299

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SJ299 7,200
    • 1 $5.25
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    • 1000 $2.625
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    Find more 2SJ29 price and stock on Findchips.com

    2SJ29 Datasheets (81)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SJ29 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SJ29 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SJ290 Hitachi Semiconductor Silicon P-channel MOS FET Original PDF
    2SJ290 Renesas Technology Silicon P-Channel MOS FET Original PDF
    2SJ290 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SJ290 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SJ290 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SJ290 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SJ290 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SJ290 Unknown FET Data Book Scan PDF
    2SJ291 Hitachi Semiconductor Mosfet Guide Original PDF
    2SJ291 Renesas Technology Silicon P-Channel MOS FET Original PDF
    2SJ291 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SJ291 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SJ291 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SJ291 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SJ291 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SJ291 Unknown FET Data Book Scan PDF
    2SJ292 Hitachi Semiconductor Mosfet Guide Original PDF
    2SJ292 Renesas Technology Silicon P-Channel MOS FET Original PDF

    2SJ29 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Hitachi DSA001651

    Abstract: No abstract text available
    Text: 2SJ290 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter


    Original     		PDF 2SJ290 O-220AB Hitachi DSA001651

    2SJ290

    Abstract: No abstract text available
    Text: 2SJ290 Silicon P-Channel MOS FET Application TO–220AB High speed power switching Features • • • • Low on–resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC – DC


    Original     		PDF 2SJ290 220AB 2SJ290

    2SJ297

    Abstract: 2SJ291
    Text: 2SJ297 L , 2SJ297 S Silicon P-Channel MOS FET Application LDPAK High speed power switching 4 4 Features 1 • • • • Low on–resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC – DC


    Original     		PDF 2SJ297 2SJ291 2SJ291

    2SJ293

    Abstract: Hitachi DSA001651
    Text: 2SJ293 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter


    Original     		PDF 2SJ293 O-220FM 2SJ293 Hitachi DSA001651

    2SJ294

    Abstract: Hitachi DSA001651
    Text: 2SJ294 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter


    Original     		PDF 2SJ294 O-220FM 2SJ294 Hitachi DSA001651

    2sJ292

    Abstract: Hitachi 2SJ Hitachi DSA001651
    Text: 2SJ292 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter


    Original     		PDF 2SJ292 O-220AB 2sJ292 Hitachi 2SJ Hitachi DSA001651

    2SJ297

    Abstract: Hitachi 2SJ Hitachi DSA001651
    Text: 2SJ297 L , 2SJ297(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter


    Original     		PDF 2SJ297 Hitachi 2SJ Hitachi DSA001651

    2SJ291

    Abstract: No abstract text available
    Text: 2SJ291 Silicon P Channel MOS FET Application TO–220AB High speed power switching Features • • • • Low on–resistance High speed switching Low drive current 4 V gate drive device can be driven form 5 V source • Suitable for Switching regulator, DC – DC


    Original     		PDF 2SJ291 220AB 2SJ291

    2sj28

    Abstract: 2SJ72 2sj26 2SJ83 2SJ99 2SJ96 2SJ18 2SJ82 2SJ90 2SJ73
    Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) Pd/Pch Tj/Tch min UP07 2N5465 2SJ10 2SJ11 2SJ12 2SJ13 2SJ15 2SJ16 2SJ17 2SJ18 2SJ19 2SJ20 2SJ21 2SJ22 2SJ26 2SJ27 2SJ28 2SJ29 2SJ32 2SJ33 2SJ39 2SJ40


    Original     		PDF 2N5465 2SJ10 2SJ11 2SJ12 2SJ13 2SJ15 2SJ16 2SJ17 2SJ18 2SJ19 2sj28 2SJ72 2sj26 2SJ83 2SJ99 2SJ96 2SJ18 2SJ82 2SJ90 2SJ73

    2SJ296S

    Abstract: 2SJ296 Hitachi 2SJ Hitachi DSA001651
    Text: 2SJ296 L , 2SJ296(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter


    Original     		PDF 2SJ296 2SJ296S Hitachi 2SJ Hitachi DSA001651

    2SJ294

    Abstract: 2SJ291
    Text: 2SJ294 Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter


    OCR Scan     		PDF 2SJ294 O-22QFM 2SJ291

    Untitled

    Abstract: No abstract text available
    Text: 2SJ292 Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter


    OCR Scan     		PDF 2SJ292 2SJ280

    2SJ293

    Abstract: No abstract text available
    Text: 2SJ293 Silicon P C h a n n e l M O S F E T Application High speed power switching Features • • • • Low on—resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC


    OCR Scan     		PDF 2SJ293 2SJ290 2SJ293

    2SJ28

    Abstract: No abstract text available
    Text: 2SJ292 Silicon P C h a n n e l M O S F E T Application High speed power switching Features • • • • Low on—resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC


    OCR Scan     		PDF 2SJ292 2SJ280 2SJ28

    2SJ297

    Abstract: No abstract text available
    Text: 2SJ297 L , 2SJ297(S) Silicon P-Channel MOS FET HITACHI Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter


    OCR Scan     		PDF 2SJ297 2SJ291

    HITACHI 2SJ* TO-3

    Abstract: No abstract text available
    Text: 2SJ290 Silicon P-Channel MOS FET HITACHI Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for sw itching regulator, DC-DC converter


    OCR Scan     		PDF 2SJ290 HITACHI 2SJ* TO-3

    2SJ293

    Abstract: No abstract text available
    Text: 2SJ293 Silicon P-Channel MOS FET HITACHI Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter


    OCR Scan     		PDF 2SJ293 O-220FM 2SJ290 2SJ293

    Untitled

    Abstract: No abstract text available
    Text: 2SJ290 Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter


    OCR Scan     		PDF 2SJ290

    2SJ297

    Abstract: No abstract text available
    Text: 2SJ297 L , 2SJ297 S Silicon P - C h a n n e l M O S F E T Application High speed power switching Features • • • • Low on—resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC


    OCR Scan     		PDF 2SJ297 2SJ291

    2SJ295

    Abstract: 2SJ280
    Text: 2SJ295 Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter


    OCR Scan     		PDF 2SJ295 O-22QFM 2SJ280

    j291

    Abstract: No abstract text available
    Text: 2SJ291 Silicon P-Channel MOS FET HITACHI Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter


    OCR Scan     		PDF 2SJ291 Symbol-20 j291

    A4080

    Abstract: No abstract text available
    Text: 2SJ291 Silicon P C h a n n e l M O S F E T Application High speed power switching Features • • • • Low on—resistance High speed switching Low drive current 4 V gate drive device can be driven form 5 V source • Suitable for Switching regulator, DC - DC


    OCR Scan     		PDF 2SJ291 A4080

    J296

    Abstract: No abstract text available
    Text: 2SJ296 L , 2SJ296 S Silicon P - C h a n n e l M O S F E T Application High speed power switching Features • • • • Low on—resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC


    OCR Scan     		PDF 2SJ296 2SJ290 J296

    Untitled

    Abstract: No abstract text available
    Text: 2SJ297 L , 2SJ297(S) Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter


    OCR Scan     		PDF 2SJ297 2SJ291