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    2SJ22 Search Results

    2SJ22 Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    2SJ220STR-E Renesas Electronics Corporation Pch Single Power Mosfet -60V -20A 85Mohm LDPAK(S) Visit Renesas Electronics Corporation
    2SJ220L-E Renesas Electronics Corporation Pch Single Power Mosfet -60V -20A 85Mohm LDPAK(L) Visit Renesas Electronics Corporation
    2SJ220STL-E Renesas Electronics Corporation Pch Single Power Mosfet -60V -20A 85Mohm LDPAK(S) Visit Renesas Electronics Corporation
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    2SJ22 Price and Stock

    TE Connectivity ROX2SJ220R

    RES 220 OHM 5% 2W AXIAL
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    Panasonic Electronic Components ERG-2SJ220

    RES 22 OHM 5% 2W AXIAL
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    TE Connectivity ROX2SJ22K

    RES 22K OHM 5% 2W AXIAL
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    DigiKey ROX2SJ22K Cut Tape 10,000 1
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    TE Connectivity ROX2SJ22R

    RES 22 OHM 5% 2W AXIAL
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    DigiKey ROX2SJ22R Cut Tape 8,895 1
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    TE Connectivity ROX2SJ220K

    RES 220K OHM 5% 2W AXIAL
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    DigiKey ROX2SJ220K Cut Tape 8,472 1
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    2SJ22 Datasheets (75)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SJ22 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SJ22 Unknown FET Data Book Scan PDF
    2SJ22 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SJ220 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SJ220 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SJ220 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SJ220 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SJ220 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SJ220 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SJ220 Renesas Technology Silicon P-channel MOS FET Scan PDF
    2SJ220L Renesas Technology Silicon P-Channel MOS FET Original PDF
    2SJ220L Unknown Scan PDF
    2SJ220L Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SJ220L Renesas Technology Silicon P-channel MOS FET Scan PDF
    2SJ220(L)(S) Unknown FET Data Book Scan PDF
    2SJ220S Renesas Technology Silicon P-Channel MOS FET Original PDF
    2SJ220S Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SJ220S Renesas Technology Silicon P-channel MOS FET Scan PDF
    2SJ221 Hitachi Semiconductor Silicon P-Channel MOS FET Original PDF
    2SJ221 Hitachi Semiconductor Silicon P-Channel MOS FET Original PDF

    2SJ22 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Hitachi DSA002713

    Abstract: No abstract text available
    Text: 2SJ222 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    Original
    PDF 2SJ222 O-220FM Hitachi DSA002713

    Hitachi 2SJ

    Abstract: Hitachi DSA00279
    Text: 2SJ222 Silicon P-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    Original
    PDF 2SJ222 Hitachi 2SJ Hitachi DSA00279

    2SJ229

    Abstract: No abstract text available
    Text: Ordering number:EN3814 P-Channel Silicon MOSFET 2SJ229 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Its height onboard is 9.5mm. · Meets radial taping. unit:mm


    Original
    PDF EN3814 2SJ229 2SJ229] 2SJ229

    2SJ221

    Abstract: DSA003771 Hitachi 2SJ
    Text: 2SJ221 Silicon P-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    Original
    PDF 2SJ221 O-220AB 2SJ221 DSA003771 Hitachi 2SJ

    2SJ229

    Abstract: No abstract text available
    Text: Ordering number : EN3814 SANYO Semiconductors DATA SHEET 2SJ229 P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Its height onboard is 9.5mm.


    Original
    PDF EN3814 2SJ229 2SJ229] 2SJ229

    EN3813

    Abstract: 2SJ228
    Text: Ordering number:EN3813 P-Channel Silicon MOSFET 2SJ228 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Meets radial taping. unit:mm 2087A [2SJ228] 2.5 1.45 1.0


    Original
    PDF EN3813 2SJ228 2SJ228] EN3813 2SJ228

    2SJ221

    Abstract: 2SJ222 Hitachi 2SJ Hitachi DSA00389
    Text: 2SJ222 Silicon P-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    Original
    PDF 2SJ222 O-220FM 2SJ221 2SJ222 Hitachi 2SJ Hitachi DSA00389

    2SJ225

    Abstract: No abstract text available
    Text: Ordering number:EN3810 P-Channel Silicon MOSFET 2SJ225 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Meets radial taping. unit:mm 2087A [2SJ225] 2.5 1.45 1.0


    Original
    PDF EN3810 2SJ225 2SJ225] PW10s, 2SJ225

    2SJ221

    Abstract: 2SJ222 Hitachi 2SJ DSA003638
    Text: 2SJ222 Silicon P-Channel MOS FET ADE-208-1186 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    Original
    PDF 2SJ222 ADE-208-1186 O-220FM 2SJ221 2SJ222 Hitachi 2SJ DSA003638

    2SJ220

    Abstract: Hitachi 2SJ Hitachi DSA001651
    Text: 2SJ220 L , 2SJ220(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    Original
    PDF 2SJ220 Hitachi 2SJ Hitachi DSA001651

    PE-50

    Abstract: 2SJ221 Hitachi 2SJ DSA003638
    Text: 2SJ221 Silicon P-Channel MOS FET ADE-208-1185 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    Original
    PDF 2SJ221 ADE-208-1185 O-220AB PE-50 2SJ221 Hitachi 2SJ DSA003638

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:EN3811 P-Channel Silicon MOSFET 2SJ226 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Its height onboard is 9.5mm. · Meets radial taping. unit:mm


    Original
    PDF EN3811 2SJ226 2SJ226]

    Untitled

    Abstract: No abstract text available
    Text: 2SJ225 2087 i L D L o w D riv e S e r ie s V D5S= 3 0 V P Channel Power M OSFET E 38 10 F e a tu re s •Small ON resistance. ■Very high-speed switching. ■Low-voltage drive. • Meets radial taping. A bsolute M axim um R atings a tT a = 25°C Drain to Source Voltage


    OCR Scan
    PDF 2SJ225 D151MH,

    Untitled

    Abstract: No abstract text available
    Text: 2SJ226 LD L o w D rive S eries VDss = 3 0 V 2085 P Channel Power M OSFET •E -381 I F e a tu re s ■Low ON resistance. ■Very high-speed switching. ■Low-voltage drive. • Its height onboard is 9.5mm. ■Meets radial taping. A bsolute M axim um R atin g s at Ta = 25°C


    OCR Scan
    PDF 2SJ226 41293YK

    2SJ229

    Abstract: No abstract text available
    Text: O rdering num ber: EN 3 8 1 4 _ 2SJ229 No.3814 P-Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu re s •Low ON resistance. ■Very high-speed switching. ■Low-voltage drive. • Its height onboard is 9.5mm. • Meets radial taping.


    OCR Scan
    PDF 2SJ229 atTa-25Â 2SJ229

    DS-16 SANYO

    Abstract: 2SJ226
    Text: Ordering num ber:EN3811 No.3811 _ 2SJ226 P-Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive, • Its height onboard is 9.5mm. - Meets radial taping.


    OCR Scan
    PDF EN3811 2SJ226 10//S, 100//A DS-16 SANYO

    2SJ227

    Abstract: No abstract text available
    Text: O rdering num ber: EN 3 8 1 2 _ 2SJ227 No.3812 P-Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu re s • Low ON resistance. • Very high-speed switching. •Low-voltage drive. ■Its height onboard is 9.5mm. • Meets radial taping.


    OCR Scan
    PDF 2SJ227

    J221

    Abstract: 2SJ221 jc100
    Text: HITACHI 2SJ221-SILICON P-CHANNEL MOS FET ,1-5 max HIGH SPEED PO W ER SWITCHING • FEATURE # Low On-Resistance # High Speed Switching # Low Drive Current -05- # 4 V Gate Drive Device - Can be driven from 5V source # Suitable for Motor Drive, DC-DC Converter,


    OCR Scan
    PDF 2SJ221 I221- J221 2SJ221 jc100

    Untitled

    Abstract: No abstract text available
    Text: 2SJ221 Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    OCR Scan
    PDF 2SJ221 -220A

    2SJ220

    Abstract: No abstract text available
    Text: 2SJ220 L , 2SJ220(S) Silicon P-Channel MOS FET HITACHI Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    OCR Scan
    PDF 2SJ220 2SJ22CKL) 2SJ174

    Untitled

    Abstract: No abstract text available
    Text: 2SJ222 Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    OCR Scan
    PDF 2SJ222 2SJ221

    Untitled

    Abstract: No abstract text available
    Text: 2SJ229 LD L o w D rive S eries V Dss = 6 0 V 2085 P Channel Power M OSFET 3814 F e a tu re s •Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Its height onboard is 9.5mm. • M eets radial taping. A b so lu te M ax im u m R a tin g s a t Ta = 25°C


    OCR Scan
    PDF 2SJ229 31893MH A8-7975

    Untitled

    Abstract: No abstract text available
    Text: 2SJ227 LD L o w D riv e S e rie s VDSs = 3 0 V 2085 P Channel Power M OSFET 3 8 12 F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Its height onboard is 9.5mm. • M eets radial taping. A b s o lu te M ax im u m R a tin g s a t Ta = 25°C


    OCR Scan
    PDF 2SJ227 31893MH A8-7975

    25jz

    Abstract: dpak DIODE 2SJ223 lf2a CO15 GD12T
    Text: blE D 4Mtì bEGS 0 D 1 2 cì f l tì 7 b 7 •HIT4 2SJ223 , 2SJ223 s HITACHI/ OPTOELECTRONICS Silicon P Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device - - - can be driven from


    OCR Scan
    PDF 2SJ223 GD12TÃ 25jz dpak DIODE 2SJ223 lf2a CO15 GD12T