Untitled
Abstract: No abstract text available
Text: Product specification 2SD1366A SOT-89 Unit:mm 1.50 ±0.1 4.50±0.1 • Features 1.80±0.1 2.50±0.1 4.00±0.1 ● Low frequency power amplifier 0.53±0.1 3.00±0.1 0.80±0.1 3 0.44±0.1 2.60±0.1 0.48±0.1 2 0.40±0.1 1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃
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2SD1366A
OT-89
500mA
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Hitachi DSA002756
Abstract: No abstract text available
Text: 2SD1366 Silicon NPN Epitaxial Application Low frequency power amplifier Outline 2SD1366 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 5
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2SD1366
Hitachi DSA002756
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Untitled
Abstract: No abstract text available
Text: 2SD1366 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V) I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)
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2SD1366
Freq190M
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Hitachi DSA002756
Abstract: No abstract text available
Text: 2SD1366A Silicon NPN Epitaxial Application Low frequency power amplifier Outline 2SD1366A Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 25 V Emitter to base voltage VEBO
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2SD1366A
Hitachi DSA002756
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Untitled
Abstract: No abstract text available
Text: IC Transistors SMD Type Silicon NPN Epitaxial 2SD1366A SOT-89 Unit:mm 1.50 ±0.1 4.50±0.1 • Features 1.80±0.1 2.50±0.1 4.00±0.1 ● Low frequency power amplifier 0.53±0.1 3.00±0.1 0.80±0.1 3 0.44±0.1 2.60±0.1 0.48±0.1 2 0.40±0.1 1 1.Base 2.Collector
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2SD1366A
OT-89
500mA
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2SD1366
Abstract: 2SD1366A Hitachi DSA00395
Text: 2SD1366A Silicon NPN Epitaxial Application Low frequency power amplifier Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector Flange 2SD1366A Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V
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2SD1366A
2SD1366
2SD1366A
Hitachi DSA00395
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2SD1366
Abstract: 2SD1366A DSA003638
Text: 2SD1366A Silicon NPN Epitaxial ADE-208-1146 Z 1st. Edition Mar. 2001 Application Low frequency power amplifier Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1366A Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit
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2SD1366A
ADE-208-1146
2SD1366
2SD1366A
DSA003638
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2SD1366
Abstract: Hitachi DSA00397
Text: 2SD1366 Silicon NPN Epitaxial Application Low frequency power amplifier Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector Flange 2SD1366 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage
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2SD1366
2SD1366
Hitachi DSA00397
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2SD1366
Abstract: Hitachi DSA0076
Text: 2SD1366 Silicon NPN Epitaxial ADE-208-1145 Z 1st. Edition Mar. 2001 Application Low frequency power amplifier Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1366 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit
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2SD1366
ADE-208-1145
2SD1366
Hitachi DSA0076
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2SD1366
Abstract: 2SD1366A
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2SC429GTM
2SC458
2SC458LG
2SC503
2SC504
2SC510
2SC512
2SC519
2SC520A
2SC594
sn76131
tlo72cp
TOSHIBA 2N3055
M53207P
2N3055 TOSHIBA
KIA7313AP
kia7640ap
LA5530
M5L8155P
TBB1458B
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2SD1388
Abstract: 2SD1387 2SD1370 2SD1369 2SD1307 2SD1331 2SD1360 2SD1346 2SD1333 2SD1371
Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 45W 2SD1301 1500 5 2A 130 3-12 10 1A (Tc=25ºC) 2SD1302 25
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2SD1301
2SD1302
2SD1303
2SD1304
2SD1305
2SD1306
2SD1307
2SD1308
2SD1309
2SD1310
2SD1388
2SD1387
2SD1370
2SD1369
2SD1307
2SD1331
2SD1360
2SD1346
2SD1333
2SD1371
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2SD1366
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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7054F
Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
Text: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver
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2sc4537
2sc454.
2sc4591
2sc4592
2sc4593
2sc460.
2sc4628
2sc4629
2sc4643
2sc4680
7054F
BC564A
HA13563
AC123A
HITACHI microcontroller H8 534 manual
IC 74LS47
AC538
BC245A
2SK3235
HA13557
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2sb1000
Abstract: No abstract text available
Text: HITACHI 2SB1000 SILICON PNP EPITAXIAL LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SD1366 _ iíiiü \ ftsr-ix i r, t >i r . !r r ^ " 1. Bdw 2. CoHcUor 3. Hmiucr 4. CoÜcciu» Range {Diincii^suiik in mai) (UPAK) MAXIMUM CO LLECTO R DISSIPATIO N
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2SB1000
2SD1366
2SB1000
2SB562.
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hitachi ad
Abstract: No abstract text available
Text: 2SD1366A Silicon NPN Epitaxial HITACHI Application Low frequency power amplifier Outline UPAK 1 2. Collector 3. Emitter 4. Collector Flange 915 2SD1366A Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage V cB O 30 V
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2SD1366A
2SD1366A
2SD1366.
hitachi ad
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2SB1000A
Abstract: No abstract text available
Text: HITACHI 2SB1000A-SILICON PNP EPITAXIAL LOW FREQ UEN C Y PO W ER AM PLIFIER Complementary pair with 2SD1366A -f \-< 1 Ba*c 2 O H e c to r -I” 3. Emitter 4 C oüeckw Fìar.gei > >Hr»« mmm} (UPAK MAXIMUM COLLECTOR DISSIPATION CURVE I A B SO LU T E MAXIMUM RATINGS iTs,=25’C)
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2SB1000A-----SILICON
2SD1366A
2SB1000A
2SB562.
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2SB1000
Abstract: 2SB562 2SD1366
Text: HITACHI 2SB1000-SILICON PN P EPITAXIAL LOW FREQUENCY PO W ER AMPLIFIER Complementary pair with 2SD1366 1 8m ax 1.5 10.1 1. Babe 2. Colic citer - 3. [immer 4. Collector Funge (Puions ion* in min) (UPAK) MAXIMUM COLLECTOR DISSIPATION CURVE • ABSO LU T E MAXIMUM RATINGS (Ta=25°C)
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2SB1000-
2SD1366
2SB1000
2SB562.
2SB562
2SD1366
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Untitled
Abstract: No abstract text available
Text: 2SD1366 Silicon NPN Epitaxial HITACHI Application Low frequency power amplifier Outline UPAK 1 1. 2. 3. 4. Base Collector Emitter Collector Flange 2SD1366 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage ^CBO 25 V
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2SD1366
20rrent
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2SB1000A
Abstract: 2SB562 2SD1366A LOPA
Text: HITACHI 2SB1000A-SILICON PNP EPITAXIAL LOW FREQUENCY PO W ER AM PLIFIER Complemenlary pair with 2SD1366A 3. Rase 2. Collector J . limitier 4. Collector Flange -U-L-o«" (Oimcnsiofli in mm) (UPAK) MAXIMUM COLLECTOR DISSIPATION CURVE !ABSO LU T E MAXIMUM RATINGS (Ta=25°C)
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2SB1000A--
2SD1366A
2SB1000A
2SB562.
2SB562
2SD1366A
LOPA
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2SB1000
Abstract: D1366 V11J V11J HITACHI 2SD1366
Text: HITACHI 2SD1366-SILICON n p n e p it a x ia l LOW FREQUENCY POWER AMPLIFIER CoTipiomonlary pai.' with 2SB1000 !?.!{• t Ì ÇiiK<W I Fn.!W 4 ColI«mr ID iR K A im in nvn UPAK) MAXIMUM COLLECTOR DISSIPATION CURVE • ABSOLUTE MAXIMUM RATINGS lTa=25°C>
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2SD1366
2SB1000
2SD1366
2SB1000
D1366
V11J
V11J HITACHI
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2SD977
Abstract: 2SD600K 2sc2233 2sc2373 2SD849 2SD1953 2SD763 ROHM 1004 nec 2sd560 2SD1162
Text: 228 - s « « tt Manuf. Type No. 2SD 973 -s-virv fc' T 2SD 973A K T 2SD 974 B ÎL tt y 2SD 972 2SD H ï¥ SANYO JÜ ^ TOSHIBA Vy>TV 2SD 971 CD - 975> 2SD 976 g fr 2SD 976A B ÎL 2SD 977 E. & 2SD 978 H H & 2S0 979 2SD1190 a m NEC B ÎL H ITACH I 2SD1162 2SD 11 1 4 K
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2SD971
2SD972
2SD973
2SD973A
2SD974
2SD560
2SD1162
2SD76800
2SD1190
2SD863
2SD977
2SD600K
2sc2233
2sc2373
2SD849
2SD1953
2SD763
ROHM 1004
nec 2sd560
2SD1162
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2SC3444
Abstract: 2sb2025 d1830 2SD1963 2sd1633 2SD1292 2SD1612 2sd1587 2sd1932 2sd1944
Text: « Type No. 2SD 1 586 2SD 1 587 0^ 2SD 1588 f 2SD 1 589 s 2SD 1590 2SD 1592 2SD 1593 ^ 250 1594 ^ 2SD 1595 ✓ 2SD 1598 2SÖ 1599 2SD 1600 2S0 1601 tt M anuf. € a • B B 1a B m. b 2SC4500L/S a b B tL fö T B tL B tL i CD ^ 2SD 1612 2SD 1613 2SD 1 6 1 4
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2SD1586
2SD1587
2SD1588
2SD1589
2SD1590
2SD1592
2SD1593
25D1594
2SD1595
2SD1598
2SC3444
2sb2025
d1830
2SD1963
2sd1633
2SD1292
2SD1612
2sd1932
2sd1944
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RTIP144C
Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Text: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.
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2SB1186
2SB1186A
2SA1304
2SA1306
2SA1305
2SB1274
2SB1015
2SB1133
2SB1287
2SB1185
RTIP144C
RTIN141C
RTIN141S
2SD947 equivalent
2SD612K
equivalent of transistor 2SA1115
RTIN241C
rtip241
2sd880 equivalent
RTIN140C
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