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ROHM Semiconductor 2SB1189T100R TRANS PNP 80V 0.7A MPT3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SB1189T100R	Cut Tape	1,071		1	1 $0.91 10 $0.568 100 $0.91 1000 $0.28316 10000 $0.28316	Buy Now
	2SB1189T100R	Digi-Reel	1,071		1	1 $0.91 10 $0.568 100 $0.91 1000 $0.28316 10000 $0.28316	Buy Now
	2SB1189T100R	Reel	1,000		1,000	1 - 10 - 100 - 1000 $0.20444 10000 $0.17625	Buy Now
Mouser Electronics	2SB1189T100R		196			1 $0.81 10 $0.559 100 $0.369 1000 $0.204 10000 $0.176	Buy Now
Bristol Electronics	2SB1189T100R		12,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	2SB1189T100R		79,200			1 $0.53 10 $0.53 100 $0.53 1000 $0.53 10000 $0.159	Buy Now
	2SB1189T100R		9,600			1 $0.63 10 $0.63 100 $0.63 1000 $0.63 10000 $0.189	Buy Now
ROHM Semiconductor 2SB1189T100Q TRANS PNP 80V 0.7A MPT3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SB1189T100Q	Digi-Reel	1,000		1	1 $0.91 10 $0.568 100 $0.91 1000 $0.28316 10000 $0.28316	Buy Now
	2SB1189T100Q	Reel	1,000		1,000	1 - 10 - 100 - 1000 $0.25555 10000 $0.1916	Buy Now
	2SB1189T100Q	Cut Tape	1,000		1	1 $0.91 10 $0.568 100 $0.91 1000 $0.28316 10000 $0.28316	Buy Now
Mouser Electronics	2SB1189T100Q		621			1 $0.8 10 $0.513 100 $0.343 1000 $0.241 10000 $0.182	Buy Now
ROHM Semiconductor 2SB1189T100Q/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	2SB1189T100Q/R		230		5	1 - 10 $1.125 100 $0.4219 1000 $0.4219 10000 $0.4219	Buy Now
Quest Components	2SB1189T100Q/R		184			1 $1.5 10 $1.5 100 $0.45 1000 $0.45 10000 $0.45	Buy Now
ROHM Semiconductor 2SB1189T113Q SMALL SIGNAL BIPOLAR TRANSISTOR, 0.7A I(C), 80V V(BR)CEO, 1-ELEMENT, PNP, SILICON
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SB1189T113Q		1,000			1 $0.45 10 $0.45 100 $0.45 1000 $0.1875 10000 $0.1875	Buy Now
	2SB1189T113Q		1,000			1 $0.45 10 $0.45 100 $0.45 1000 $0.1875 10000 $0.1875	Buy Now

2SB1189 Datasheets (14)

Part	Manufacturer	Description	Datasheet Type	PDF
2SB1189	Kexin	Medium Power Transistor	Original	PDF
2SB1189	ROHM	Medium power transistor	Original	PDF
2SB1189	TY Semiconductor	Medium Power Transistor - SOT-89	Original	PDF
2SB1189	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF
2SB1189	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SB1189	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SB1189	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SB1189	ROHM	SOT-23, SOT-89 and D-Pak Transistors	Scan	PDF
2SB1189	ROHM	Transistor Selection Guide	Scan	PDF
2SB1189T100P	ROHM	Medium Power Transistor (-80 V, -0.7 A)	Original	PDF
2SB1189T100Q	ROHM	Medium Power Transistor (-80 V, -0.7 A)	Original	PDF
2SB1189T100Q	ROHM	Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 80V 0.7A SOT-89	Original	PDF
2SB1189T100R	ROHM	Medium Power Transistor (-80 V, -0.7 A)	Original	PDF
2SB1189T100R	ROHM	Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 80V 0.7A SOT-89	Original	PDF

2SB1189 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
BD transistor Abstract: smd marking BD 2SB1189 BD marking Text: Transistors SMD Type Medium Power Transistor 2SB1189 Features High breakdown voltage, BVCEO=-80V, and high current, IC=-0.7A. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base Voltage VCBO -80 V Collector-emitter Voltage VCEO -80	Original	PDF	2SB1189 -500mA -50mA 100MHz BD transistor smd marking BD 2SB1189 BD marking
marking BDR Abstract: 2SB1189 2SD1767 Transistor 2SD1767 MARKING 82 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SB1189 TRANSISTOR PNP FEATURES z High breakdown voltage z Complements to 2SD1767 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO	Original	PDF	OT-89 2SB1189 2SD1767 -100mA -500mA -50mA -50mA 100MHz marking BDR 2SB1189 2SD1767 Transistor 2SD1767 MARKING 82
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD1767 TRANSISTOR NPN 1. BASE FEATURES z High Breakdown Voltage and Current z Excellent DC Current Gain Linearity z Complement the 2SB1189 2. COLLECTOR	Original	PDF	OT-89-3L OT-89-3L 2SD1767 2SB1189 100mA 500mA 100MHz
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SB1189 SOT-89-3L TRANSISTOR PNP 1. BASE FEATURES z High breakdown voltage z Complements to 2SD1767 2. COLLECTOR 1 2 3 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)	Original	PDF	OT-89-3L 2SB1189 OT-89-3L 2SD1767 -100mA -500mA -50mA -50mA 100MHz
2Sb1238 Abstract: 2SB1189 2SD1767 2SD1859 T100 ic T100 bd marking code transistor ROHM Text: 2SB1189 / 2SB1238 Transistors Medium power transistor −80V, −0.7A 2SB1189 / 2SB1238 !External dimensions (Units : mm) !Features 1) High breakdown voltage, BVCEO=−80V, and high current, IC=−0.7A. 2) Complements the 2SD1767 / 2SD1859. 2SB1189 4.0 1.5	Original	PDF	2SB1189 2SB1238 2SD1767 2SD1859. 2SB1189 SC-62 2Sb1238 2SD1859 T100 ic T100 bd marking code transistor ROHM
3072 rohm Abstract: 6440 diode 2SB1189 Text: SPICE PARAMETER 2SB1189 by ROHM TR Div. * 2SB1189 PNP BJT model * Date: 2006/11/17 .MODEL 2SB1189 PNP + IS=300.00E-15 + BF=228.01 + VAF=20.700 + IKF=.85858 + ISE=300.00E-15 + NE=1.3435 + BR=14.770 + VAR=100 + IKR=6.6440 + ISC=13.781E-12 + NC=1.3072 + NK=.6702	Original	PDF	2SB1189 Q2SB1189 00E-15 781E-12 88E-12 978E-12 0758E-9 08E-9 3072 rohm 6440 diode 2SB1189
Untitled Abstract: No abstract text available Text: Product specification 2SB1189 Features High breakdown voltage, BVCEO=-80V, and high current, IC=-0.7A. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base Voltage VCBO -80 V Collector-emitter Voltage VCEO -80 V Emitter-base Voltage	Original	PDF	2SB1189 -500mA -50mA 100MHz
Untitled Abstract: No abstract text available Text: Transistors 2SB1189 / 2SB1238 / 2SB899F 2SD1767 / 2SD1859 / 2SD1200F 96-618-B13 (96-750-D13) 278	Original	PDF	2SB1189 2SB1238 2SB899F 2SD1767 2SD1859 2SD1200F 96-618-B13) 96-750-D13)
transistor 2sb1238 Abstract: 2sb1238 Text: 2SB1189 / 2SB1238 Transistors Medium power transistor −80V, −0.7A 2SB1189 / 2SB1238 !External dimensions (Units : mm) !Features 1) High breakdown voltage, BVCEO=−80V, and high current, IC=−0.7A. 2) Complements the 2SD1767 / 2SD1859. 2SB1189 4.0 1.5	Original	PDF	2SB1189 2SB1238 2SD1767 2SD1859. 2SB1189 2SB1238 SC-62 transistor 2sb1238
2SD1859 Abstract: 2SB1189 2SB1238 2SD1767 T100 sc621 Text: 2SD1767 / 2SD1859 Transistors Medium power transistor 80V, 0.7A 2SD1767 / 2SD1859 !External dimensions (Units : mm) !Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238. 2SD1767 4.0 1.5 0.4 1.0 VCBO	Original	PDF	2SD1767 2SD1859 2SB1189 2SB1238. 2SD1767 SC-62 2SD1859 2SB1238 T100 sc621
2SD1859 Abstract: No abstract text available Text: 2SD1767 / 2SD1859 Transistors Medium power transistor 80V, 0.7A 2SD1767 / 2SD1859 zExternal dimensions (Unit : mm) zFeatures 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238. 2SD1767 4.0 1.5 0.4 1.0 VCBO	Original	PDF	2SD1767 2SD1859 2SB1189 2SB1238. 2SD1767 2SD1859 SC-62
2SD1859 Abstract: 2SD1767 2SB1189 2SB1238 T100 Text: 2SD1767 / 2SD1859 Transistors Medium power transistor 80V, 0.7A 2SD1767 / 2SD1859 zExternal dimensions (Unit : mm) zFeatures 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238. 2SD1767 4.0 1.5 0.4 1.0 VCBO	Original	PDF	2SD1767 2SD1859 2SB1189 2SB1238. 2SD1767 2SD1859 2SB1238 T100
2SB1238 Abstract: No abstract text available Text: Medium power transistor 80V, 0.7A 2SB1189 / 2SB1238 Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SD1767 / 2SD1859. Dimensions (Unit : mm) 2SB1189 4.0 1.5 0.4 1.0 Collector power dissipation	Original	PDF	2SB1189 2SB1238 2SD1767 2SD1859. 2SB1189 2SB1238 SC-62 R1010A
2SB1189 Abstract: 2SB1238 2SD1767 2SD1859 T100 Text: 2SB1189 / 2SB1238 Transistors Medium power transistor −80V, −0.7A 2SB1189 / 2SB1238 zExternal dimensions (Unit : mm) zFeatures 1) High breakdown voltage, BVCEO=−80V, and high current, IC=−0.7A. 2) Complements the 2SD1767 / 2SD1859. 2SB1189 4.0 1.5	Original	PDF	2SB1189 2SB1238 2SD1767 2SD1859. 2SB1189 SC-62 2SB1238 2SD1859 T100

marking 07 sot89 Abstract: No abstract text available Text: 2SB1189 SOT-89 Transistor PNP 1. BASE SOT-89 2. COLLECTOR 1 2 3. EMITTER 3 4.6 4.4 1.8 1.4 1.6 1.4 B 2.6 4.25 2.4 3.75 Features 0.8 MIN High breakdown voltage Complements to 2SD1767 0.44 0.37 Parameter B 0.53 0.48 0.40 2x) 0.35 1.5 3.0 Dimensions in inches and (millimeters)	Original	PDF	2SB1189 OT-89 OT-89 2SD1767 -100mA -500mA -50mA 100MHz marking 07 sot89
2SB1238 Abstract: 2SB1189 2SD1767 2SD1859 T100 Text: Medium power transistor 80V, 0.7A 2SB1189 / 2SB1238 Dimensions (Unit : mm) Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SD1767 / 2SD1859. 2SB1189 4.0 1.5 0.4 1.0 VCBO −80 Collector-emitter voltage	Original	PDF	2SB1189 2SB1238 2SD1767 2SD1859. 2SB1189 2SB1238 2SD1859 T100
sn76131 Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157	Original	PDF	2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
l289 Abstract: No abstract text available Text: Is 7 > V X $ /Transistors 2SB1189 /M e d iu m Power Amp. Epitaxial Planar PNP Silicon Transistor • 4^JfiTj-;£[21/D iin e n s io n s Unit : mm 1 ) = i u ' ? i i j a ^ P c = 2 w r ' * 5 [, (4 0 x -7 40X0.7mm-tz 7 S 2) ra R E E , V ifc V ceo= - 80V, X	OCR Scan	PDF	2SB1189 40X40X0 2SD1767 l289
Q2SB1189 Abstract: No abstract text available Text: 2SB1189 h "7 > ' s Z $ / T ransistors 0 Q D 4 4 0 Q PNP y ' J : l > S ; 7 > v * * Epitaxial Planar PNP Silicon Transistor Power Amp. • 1$* • W fM ííE l/ D im e n s io n s Unit : mm 1 ) 3 L ^ * » * P c = 2 W T '* $ o (40 X 4 0 X 0 .7 m m -b 7 5 v ? £ * 6 { iffl0 # )	OCR Scan	PDF	2SB1189 2SD1767 40X40 SC-62 2SD1767. Q2SB1189
2SD1659 Abstract: 2SB689F 2sb123b Text: 2SB1189 / 2SB1238 / 2SB899F 2SD1767 / 2SD1859 / 2SD1200F Transistors I Medium Power Transistor —80V, —0.7A 2 S B 1 189 / 2 S B 1 238 / 2 S B 8 8 9 F •F e a tu re s • A b s o lu t e m axim um ratings (T a = 2 5 'C ) 1 ) High breakdown voltage and high current. (—80V, - 0.7A)	OCR Scan	PDF	2SB1189 2SB1238 2SB899F 2SD1767 2SD1859 2SD1200F --80V, 2SB123B 2SB689F -126FP 2SD1659
SS138 Abstract: 2SB1189 2SB1238 2SB889F 2SB899F 2SD1767 2SD1859 2SB899 Text: 2SB1189 12SB1238 / 2SB899F 2SD1767 / 2SD1859 12SD1200F T ra n sisto rs I M e d iu m P o w e r T r a n s is t o r — 80V, — 0.7A 2 S B 1 189 / 2S B 1238 / 2S B 889F • A b s o l u t e m a x im u m r a t in g * ( T a — 2 5 ^ ) • F * a tu r* * 1 > H i g h b r e a k d o w n v o t in g o . B V e c o	OCR Scan	PDF	2SB1189 2SB1238 2SB899F 2SD1767 2SD1859 12SD1200F 2SB889F PSB1189 SS138 2SB889F 2SB899
Untitled Abstract: No abstract text available Text: 2SB1189 / 2SB1238 / 2SB899F 2SD1767 / 2SD1859 / 2SD1200F Transistors Medium Power Transistor —80V, —0.7A I 2SB1189 / 2SB1238 / 2SB889F •Features •A b s o lu te maximum ratings ( T a ^ î S t ) 1 ) High breakdown voltage and high current. {—60V, —0.7A)	OCR Scan	PDF	2SB1189 2SB1238 2SB899F 2SD1767 2SD1859 2SD1200F 2SB889F 2SD1767/2SD1859/2SD1200F.
Untitled Abstract: No abstract text available Text: 2SB1189 N 7 > V ^ £ /Transistors 9 Q R 1 1 A Q « w D • x tf$ y 7 J i'y is -ïB P N P '> v = i> b 7 > y z 2 Epitaxial Planar PNP Silicon Transistor /Medium Power Amp. • fl-Jl^iäslil/D im ensions Unit : mm • ttft 1 )3 U -7 $ i^ P c = 2 W T '< fe 5 0 (40 X	OCR Scan	PDF	2SB1189 2SD1767. 25ions
2SD1761 Abstract: 2sb1216 2SB1220 2sb118 2SB1187 2SB1204 2SD1812 2SB1184 2SB1208 2SB1188 Text: - 80 - Ta=25'C, *EP(älc=25cC 2SB1184 2SB1184F5 2SB1185 2SB1186 2SB1186A 2SB1187 2SBU88 2SB1189 2SBU90 2SBU90A 2SB1191 2SB1191A 2SB1192 2SB1192A 2SB1193 2SB1194 2SB1201 2SB1202 2SB1203 2SB1204 2SB1205 2SB1206 2SB1207 2SB1208 2SB1209 2SB1212 2SB1214 2SB1215	OCR Scan	PDF	2SB1184 2sb1184f5 2SBU85 2SB1186 2sb1186a 2sb1187 2SB1188 2SB1209 2SD1812 SC-51 2SD1761 2sb1216 2SB1220 2sb118 2SB1204 2SB1208

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2SB1189 Price and Stock

ROHM Semiconductor 2SB1189T100R

ROHM Semiconductor 2SB1189T100Q

ROHM Semiconductor 2SB1189T100Q/R

ROHM Semiconductor 2SB1189T113Q

2SB1189 Datasheets (14)

2SB1189 Datasheets Context Search

BD transistor

marking BDR

Untitled

Untitled

2Sb1238

3072 rohm

Untitled

Untitled

transistor 2sb1238

2SD1859

2SD1859

2SD1859

2SB1238

2SB1189

marking 07 sot89

2SB1238

sn76131

l289

Q2SB1189

2SD1659

SS138

Untitled

Untitled

2SD1761