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    2N655 Search Results

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    2N655 Price and Stock

    Central Semiconductor Corp 2N6551

    Trans GP BJT NPN 60V 1A 3-Pin TO-202 Box - Boxed Product (Development Kits) (Alt: 2N6551)
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    Avnet Americas 2N6551 Box 500
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    Central Semiconductor Corp 2N6551 TIN/LEAD

    Transistor GP BJT NPN 60V 1A 3-Pin TO-202 Box - Boxed Product (Development Kits) (Alt: 2N6551 TIN/LEAD)
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    Avnet Americas 2N6551 TIN/LEAD Box 500
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    Central Semiconductor Corp 2N6551 PBFREE

    Transistor GP BJT NPN 60V 1A 3-Pin TO-202 Box - Boxed Product (Development Kits) (Alt: 2N6551 PBFREE)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 2N6551 PBFREE Box 500
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    STMicroelectronics STM32N655A0H3Q

    MCU 800 - Trays (Alt: STM32N655A0H3Q)
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    Avnet Americas STM32N655A0H3Q Tray 2,940
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    STMicroelectronics STM32N655L0H3Q

    MCU 800 - Trays (Alt: STM32N655L0H3Q)
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    Avnet Americas STM32N655L0H3Q Tray 1,008
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    2N655 Datasheets (172)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N655 Germanium Power Devices Germanium PNP Small Signal Transistors Scan PDF
    2N655 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N655 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N655 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N655 Unknown GE Transistor Specifications Scan PDF
    2N655 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N655 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N655 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N655 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N655 Unknown Vintage Transistor Datasheets Scan PDF
    2N655 Semitron Alloy Junction Germanium Transistor Scan PDF
    2N655 Semitronics Alloy-Junction Germanium Transistors Scan PDF
    2N6550 InterFET N-Channel silicon junction field-effect transistor Original PDF
    2N6550 InterFET N-Channel Silicon Junction Field-Effect Transistor Original PDF
    2N6550 Crystalonics Transistor Data Book 1976 Scan PDF
    2N6550 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N6550 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6550 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2N6550 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6550 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    ...

    2N655 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3633

    Abstract: TIP300 2N3609 2SA8140 MH0816 BCX53 Rohm 2sb631 hitachi 2N3566 2N3519 sk3025
    Text: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 25 30 BCX53 MH0816 MH0818 MM4006 M0818 M0818 MM4031 ST4031 BCX53•6 ZTX552 BOW60 NS0204 2SA780AK BSV17·10 BSV17·10 BSV17·10 BSV17·6 BSV17·6 ~l,;X:';HU 35 40 45 50 2SA777 2SA777 B0418 2N6555 2SB1042M


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    PDF

    2n4889

    Abstract: 2N4858 TEXAS 2N4418 2sa777 2n4891 2N4917 2SA8150 6ae diode 2N4417 2N6556
    Text: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 25 30 BCX53 MH0816 MH0818 MM4006 M0818 M0818 MM4031 ST4031 BCX53•6 ZTX552 BOW60 NS0204 2SA780AK BSV17·10 BSV17·10 BSV17·10 BSV17·6 BSV17·6 ~l,;X:';HU 35 40 45 50 2SA777 2SA777 B0418 2N6555 2SB1042M


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    Tip300

    Abstract: 2SA8140 BCX53 Rohm 2SA8150 rohm 6AE 2SA1358Y MM4006 2SA1358-Y 2SA815 2sb631 hitachi
    Text: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 25 30 BCX53 MH0816 MH0818 MM4006 M0818 M0818 MM4031 ST4031 BCX53•6 ZTX552 BOW60 NS0204 2SA780AK BSV17·10 BSV17·10 BSV17·10 BSV17·6 BSV17·6 ~l,;X:';HU 35 40 45 50 2SA777 2SA777 B0418 2N6555 2SB1042M


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    PDF 202AC 220AB 126var Tip300 2SA8140 BCX53 Rohm 2SA8150 rohm 6AE 2SA1358Y MM4006 2SA1358-Y 2SA815 2sb631 hitachi

    2N6552

    Abstract: 2N6555 2N6551 2n6556 2N6553 2n6554 TO202
    Text: 2N6551 2N6552 2N6553 2N6554 2N6555 2N6556 NPN PNP COMPLEMENTARY SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6551, 2N6554 series types are complementary silicon transistors manufactured by the epitaxial planar process, designed


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    PDF 2N6551 2N6552 2N6553 2N6554 2N6555 2N6556 2N6551, O-202 TO202

    2U 37 diode

    Abstract: M810S KT934B diode 2N4000 2N2196 KT934G KT646A 2N6390 2N2197 semelab 2N2197
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 35 40 >= 50 BSX46•6 MH8106 MS106 MS106 BCX55-6 TN2017 2N2017 BC141B ~g~~t~g 55 60 65 70 2N2197 BD415 2N6551 BC141C BSX46·16 BCX55·16 2SD1615 2SD1615 2S01615A 2SD1615A BD320 SD1527·8 BFR22


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    PDF 220AB 205AD 2N4923 2N4000 MM3020 2SD221F BCX56 DTL1653 2U 37 diode M810S KT934B diode 2N4000 2N2196 KT934G KT646A 2N6390 2N2197 semelab 2N2197

    2N6550

    Abstract: 10NV transistor B27
    Text: Databook.fxp 1/13/99 2:09 PM Page B-27 B-27 01/99 2N6550 N-Channel Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier Absolute maximum ratings at TA =25¡C Reverse Gate Source & Reverse Gate Drain Voltage Continuious Forward Gate Current


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    PDF 2N6550 NJ450L 2N6550 10NV transistor B27

    Untitled

    Abstract: No abstract text available
    Text: Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2N6550 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA =25°C Low-Noise, High Gain Amplifier Reverse Gate Source & Reverse Gate Drain Voltage


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    PDF 2N6550

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    transistor crossreference

    Abstract: NTE123AP NPN transistor ECB TO-92 TIS98 "cross-reference" 2N3906 NPN Transistor NTE159 ebc Transistor BF859A TO-202 transistor NPN SK3232
    Text: Black White Vector Monitor Transistor Cross-Reference Location Deflection "X" Deflection "Y" "Other" Part Wells-Gardner 19V2000 Cross Type Upgrade Location Part Electrohome G05-802 Cross Type Upgrade Q701 Q702 Q703 Q704 Q705 Q706 Q707 na TPS98 TPS98 TPS98


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    PDF 19V2000 G05-802 TPS98 2N3906 MPSU57 MPSU07 MPSA05 transistor crossreference NTE123AP NPN transistor ECB TO-92 TIS98 "cross-reference" 2N3906 NPN Transistor NTE159 ebc Transistor BF859A TO-202 transistor NPN SK3232

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


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    PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

    REF101KM

    Abstract: REF101SM 2N6551 burr brown tame OPA27 REF101 REF101JM REF101RM
    Text: REF101 Precision VOLTAGE REFERENCE FEATURES APPLICATIONS ● +10.00V OUTPUT ● HIGH ACCURACY: ±0.005V ● VERY LOW DRIFT: 1ppm/°C max ● PRECISION CALIBRATED VOLTAGE STANDARD ● TRANSDUCER EXCITATION ● D/A AND A/D CONVERTER REFERENCE ● PRECISION CURRENT REFERENCE


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    PDF REF101 50ppm/1000hrs REF101 OPA111 2000R VFC320 10kHz 3300pF REF101KM REF101SM 2N6551 burr brown tame OPA27 REF101JM REF101RM

    2N6550

    Abstract: CD860 cm8601 CM860 2N6550 equivalent ultra low igss pA "TO-72 package"
    Text: n t a C R Y S T A W ebsite: WWW.Crystalonics.com L O N I C S ^ C Fax: i 631-585-4858 Phone: (631-981-6140) * See price list fo r ordering inform ation ULTRA LOW NOISE 2N6550 CM 860 SILI CON E P I T A X I A L J U N C T I O N CICI H CCCCfT TRANQIQTHR M f U AI /~\


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    PDF 2N6550/CM860 2N6550 CM860 2N6550 CM860 2N6550/CM860/CD860 2N6550/CM8Ã 0/CD860 CD860 cm8601 2N6550 equivalent ultra low igss pA "TO-72 package"

    2N1378

    Abstract: 2N1924 2N2374 2N1373 2N526 2N508A 2N525 2N1274 2N1305 2N2001
    Text: GERMANIUM PNPSMALL SIGNAL TRANSISTORS Type ycBo V Max YFWO V Max Vc, V Max Vc, V 2N465 2N466 2N467 2N508 2N508A 2N522 2N524 2N525 2N526 2N527 2N580 2N581 2N650 2N651 2N652 2N653 2N654 2N655 2N658 2N659 2N660 2N661 2N662 2N1057 2N1097 2N1098 2N1144 2N1145


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    PDF 2N465 2N466 2N467 2N508 2N508A 2N522 2N524 2N525 2N526 2N527 2N1378 2N1924 2N2374 2N1373 2N1274 2N1305 2N2001

    2N6558

    Abstract: 2N6557 2N6559
    Text: Datasheet 2N6557 2N6558 2N6559 NPN SILICON Hlr - VOLTAGE TRANSISTOR F o n fH i• i i G m i wm i ^ - - ■ semiconductor Corp- JEDEC 7 j -202 CASE 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors


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    PDF 2N6557 2N6558 2N6559 7j-202 20MHz 2N6558 2N6557 2N6559

    2N6550

    Abstract: ultra low igss pA AAHB low igss 2N6550/CM860
    Text: ULTRA LOW NOISE h â 2N6550 SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR r • GEOMETRY 424, PG. 58 ¿ 3 0 MAX The 2N 6550 is a high, Jn/lD lo w noise ju n c tio n F.E.T. fo r lo w level a m p lifie r use. The min. gm o f 25,000 ^imho assures a voltage gain o f 25 m in. w ith a 1K


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    PDF 2N6550 2N6550 000/j/ ultra low igss pA AAHB low igss 2N6550/CM860

    BC337 BC547

    Abstract: BC182 BC547 BC547 surface mount T0-92 BT2907A TN2905A BC237 2n5962
    Text: bSD113Q DDa^Sl? 372 * N S C 5 m Devices Volts Min •c Min Max 2N4032 1000 100 2N6554 1500 80 SEniCOND PNP NF (dB) Max Package I’ d (A n ti» (mW) @25°C mA (MHz) Min mA 300 100 150 50 TO-39 800 300 50 75 50 T0-202(55) 1333 M M BT2907A 600 100 300 150


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    PDF bSD113Q 2N4032 2N6554 BT2907A PN2907A PN3645 PN4249 PN4250A PN4355 TN2905A BC337 BC547 BC182 BC547 BC547 surface mount T0-92 TN2905A BC237 2n5962

    BC337/BC327

    Abstract: BC182 BC547 BC237 NATIONAL SEMICONDUCTOR BC327 NATIONAL SEMICONDUCTOR T0-92 BC547 to92 BC237 national 2N4032 2N6554 PN2907A
    Text: •c NATL 50 45 mA Max Min Max 2N4032 1000 100 300 2N6554 NPN 60 SEniCOND (DISCRETE ) (Volts) Min PNP NF (dB) Max 372 • NSCS P d (Arnb) Package (mW) @25°C mA (MHz) Min mA 100 150 50 TO-39 800 1500 80 300 50 75 50 T0-202(55) 1333 MMBT2907A 600 100 300


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    PDF bS0113D 2N4032 2N6554 T0-202 MMBT2907A O-236* PN2907A PN3645 T0-92 PN4249 BC337/BC327 BC182 BC547 BC237 NATIONAL SEMICONDUCTOR BC327 NATIONAL SEMICONDUCTOR BC547 to92 BC237 national

    2N6550

    Abstract: CD860 teledyne transistor teledyne crystalonics
    Text: TELEDY NE COMPONENTS SÔE D • ôTlTbûa GQQbSS4 2 ■ 7 < Il - * 5 ULTRA LOW NOISE 2N6550 CM860 SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR G E O M E T R Y 424 .230 MAX. 195t.005- Lo The 2 N 6 5 5 0 / C M 8 6 0 is a high, gm />D low noise Junction F.E.T. for low level


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    PDF 2N6550 CM860 E--07 2N6550/CM860/CD860 2N6550/CM860/CD860 CD860 teledyne transistor teledyne crystalonics

    2N6718 NATIONAL SEMICONDUCTOR

    Abstract: T0-237 NSDU07 bc640 to237 2N6717 T0237 2N6730 2N6718 mpsa06 2N3019
    Text: bflE J> m fc,SD113D ODBTSIS STT • NSC5 NATL SEHICOND D I S C R E T E Devices V C£0(su*l> 100 PUP NPN 2N6553 2N6718 80 2N6730 mA (MHz) Min IDA NF (dB) Max P d (Amb) Package (mW) Max Min Max 1000 80 250 50 75 100 T0-202(55) 1333 1000 50 250 250 50 200


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    PDF SD113D 2N6553 T0-202 2N6718 2N6730 T0-237 NSDU07 2N3019 2N3700 2N6718 NATIONAL SEMICONDUCTOR NSDU07 bc640 to237 2N6717 T0237 mpsa06 2N3019

    2N6551

    Abstract: 2N6556 2N6553 2N6552 2N6555 2N6554 TO-202 transistor NPN 2n6554
    Text: Datasheet Central Sem icondu ctor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 NPN PNP 2N6551 2N 6552 2N6553 2N6554 2N6555 2N6556 COMPLEMENTARY SILICON TRANSISTOR JEDEC T 0 -2 0 2 CASE Manufacturers of World Class Discrete Semiconductors


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    PDF 2N6551 2N6554 2N6552 2N6555 2N6553 2N6556 T0-202 TO-202 transistor NPN 2n6554

    NSDU07

    Abstract: bc640 to237 2n6555 T0202 2M6718 2N4033
    Text: bflE T> m t.SD113D □OB'ISIS STT • N S C 5 NATL SEMICOND DISCRETE Devices VCE0(su*t) (Wilts) Min 100 PNP NPN 2N6553 2M6718 80 2N6730 NF (dB) Max Pd (Amb) Package (mW) Max Min Max 1000 80 250 50 75 100 T0-202(55) 1333 1000 50 250 250 50 200 TO-237{91 )


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    PDF SD113D 2N6553 2M6718 NSDU07 2N6730 T0-202 O-237 bc640 to237 2n6555 T0202 2N4033

    bc856 to 92

    Abstract: bc846 to 92 2N2907A TO-92 2N3859A PN3568 Marking 43B NSDU05 8C556 2N3859A NATIONAL SEMICONDUCTOR T0-237
    Text: ]> • £>501130 0 0 3 T 5 1 b General Purpose Amplifiers and Switches continued; Devices (Volts Min PNP NPN 65 (mA) Max Min Max 450 BC546 100 110 BC846 100 110 2N4036 60 hFE@ lc k V CE0(m b 1) fT @»c mA (MHz) Min mA NF (dB) Max (mW) @25°C 2.0 300 Typ


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    PDF BC546 BC846 O-236* 2N4036 8C556 T0-92 BC856 TN4036 bc856 to 92 bc846 to 92 2N2907A TO-92 2N3859A PN3568 Marking 43B NSDU05 2N3859A NATIONAL SEMICONDUCTOR T0-237

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors TO-202 Case TYPE NO. NPN PNP @ Ic hFE ic PD BVCBO BVCEO A (W) 00 (V) MIN MIN MIN MAX MAX (mA) VCE(SAT) @ IC (V) (A) MAX n (MHz) MIN 2N6548 2.0 2.0 50 40 25,000 150,000 200 2.0 2.0 100 2N6549 2.0 2.0 50 40 15,000 150,000 200 2.0 2.0 100


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    PDF O-202 2N6548 2N6549 2N6551 2N6554 2N6552 2N6555 2N6553 2N6556 CEN-U05

    MK1V135

    Abstract: c3419 je270 332 14401 ctx200
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M C 3 4 1 9 -1 L SUBSCRIBER LOOP INTERFACE CIRCUIT . . . d e s ig n e d as th e h e a rt o f a c irc u it to p ro v id e BOR SH T fu n c tio n s f o r te le p h o n e s e rv ic e in C e n tra l O ffic e , P A B X , a n d S u b s c rib e r C ar­


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    PDF in004 iF/60 MJH271 MJE270 MPSA56 2N3905 1N4007 MOC3030 MC3419-1L MK1V135 c3419 je270 332 14401 ctx200