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    2N6328 Search Results

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    2N6328 Price and Stock

    Microchip Technology Inc 2N6328

    TRANS NPN 100V 30A TO3
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    DigiKey 2N6328 Bulk 100
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    Avnet Americas 2N6328 Bulk 36 Weeks 100
    • 1 $123.0488
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    • 100 $116.5905
    • 1000 $118.68201
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    Newark 2N6328 Bulk 100
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    • 100 $121.97
    • 1000 $117.28
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    Microchip Technology Inc 2N6328 36 Weeks
    • 1 $131.35
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    Onlinecomponents.com 2N6328
    • 1 -
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    • 100 $120.15
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    NAC 2N6328 Tray 2
    • 1 $134.04
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    • 100 $123.46
    • 1000 $114.43
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    Master Electronics 2N6328
    • 1 -
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    • 100 $120.15
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    Texas Instruments 2N6328

    TRANSISTOR,BJT,NPN,100V V(BR)CEO,30A I(C),TO-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N6328 1
    • 1 $12.2625
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    2N6328 Datasheets (25)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6328 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N6328 API Electronics 25 AMPS / 30 AMPS NPN Transistors Scan PDF
    2N6328 Diode Transistor Transistor Short Form Data Scan PDF
    2N6328 General Transistor Power Transistor Selection Guide Scan PDF
    2N6328 Microsemi Silicon NPN Transistor Scan PDF
    2N6328 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N6328 Motorola European Master Selection Guide 1986 Scan PDF
    2N6328 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6328 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N6328 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6328 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6328 Unknown Transistor Replacements Scan PDF
    2N6328 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6328 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N6328 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6328 New England Semiconductor NPN TO-3 Transistor Scan PDF
    2N6328 New England Semiconductor PNP TO-3 Transistor Scan PDF
    2N6328 New England Semiconductor Transistors - Pol=NPN / Pkg=TO3 / Vceo=100 / Ic=30 / Hfe=6-30 / fT(Hz)=3M / Pwr(W)=114 Scan PDF
    2N6328 PPC Products Transistors - Pol=NPN / Pkg=TO3 / Vceo=100 / Ic=30 / Hfe=6-30 / fT(Hz)=3M / Pwr(W)=114 Scan PDF
    2N6328 PPC Products Transistor Short Form Data Scan PDF

    2N6328 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6328

    Abstract: Audio Amplifier 2n6328 2N6326 2N6327
    Text: Inchange Semiconductor Product Specification 2N6326 2N6327 2N6328 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・High DC current gain APPLICATIONS ・Designed for audio amplifier and switching circuits applications


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    PDF 2N6326 2N6327 2N6328 2N6326 2N6327 2N6328 Audio Amplifier 2n6328

    2N6328

    Abstract: 2N6326 Audio Amplifier 2n6328 2N6327
    Text: SavantIC Semiconductor Product Specification 2N6326 2N6327 2N6328 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·High DC current gain APPLICATIONS ·Designed for audio amplifier and switching circuits applications


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    PDF 2N6326 2N6327 2N6328 2N6326 2N6327 2N6328 Audio Amplifier 2n6328

    2N6328

    Abstract: 2N6327 2N6326 Audio Amplifier 2n6328
    Text: JMnic Product Specification 2N6326 2N6327 2N6328 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・High DC current gain APPLICATIONS ・Designed for audio amplifier and switching circuits applications PINNING


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    PDF 2N6326 2N6327 2N6328 2N6326 2N6327 2N6328 Audio Amplifier 2n6328

    2N6328

    Abstract: No abstract text available
    Text: 2N6328 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)30 Absolute Max. Power Diss. (W)114# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0m° @V(CBO) (V) (Test Condition)50 V(CE)sat Max. (V)3.0 @I(C) (A) (Test Condition)30


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    PDF 2N6328

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    transistor mosfet buv18a

    Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
    Text: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9


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    2N5657 equivalent

    Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.


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    PDF 2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes

    MJE494

    Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS


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    PDF BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037

    2SD669 equivalent

    Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc


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    PDF 2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544

    2SC495

    Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink


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    PDF MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar

    "Tektronix 475"

    Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,


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    PDF 48/BUX BUX48 BUX48A AMPERE32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A "Tektronix 475" equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent

    D42C5

    Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is


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    PDF MJE16204 MJE16204 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C D42C5 transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220

    mje521 equivalent

    Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry


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    PDF MJE521 MJE371 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C mje521 equivalent BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100

    5305da

    Abstract: 5305d 2N6329 2N6330 2n6331
    Text: T Y P E S 2N6329, 2N6330, 2N6331 P-N -P S IN G L E -D IF F U S E D M ES A SILICON P O W ER T R A N S IS T O R S IB H C -< FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH 2N6326, 2N6327, 2N6328 • 200 W at 25° C Case Temperature


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    PDF 2N6329, 2N6330, 2N6331 2N6326, 2N6327, 2N6328 200-mJ 2N6329 2N6330 2N6331 5305da 5305d

    2N6127

    Abstract: 2N6328 TEXAS INSTRUMENTS 2N6328 1N914 2N6326 2N6327 TRI15 526529
    Text: T\ yPES 2MS32S. 2N6327, 2N6328 N-P-H SILICON POWER TRANSISTORS P A R A M E T E R M E A S U R E M E N T IN FO R M A T IO N V O LTAG E W AVEFO RM S T E S T C IR C U IT NOTES. A B. V ge The is a —3 0 v o u is e V 3er, w a v e t o r m du tv c v c Dm 0 V in t o a 5 0 - i l t e r m i n a t i o n .


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    PDF 2N6327, 2N6328 1N914 2N6127 2N6328 TEXAS INSTRUMENTS 2N6326 2N6327 TRI15 526529

    2N6328

    Abstract: 2N6326
    Text: T Y P E S 2N6326, 2 N 6 3 2 7, 2N6328 N -P -N S IN G L E -D IF F U S E D M E S A S IL IC O N P O W ER T R A N S IS T O R S • 200 W at 25°C Case Temperature • 30-A Rated Collector Current • 200-mJ Reverse Energy Rating • High SOA Capability, 20 V and 10 A


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    PDF 2N6326, 2N6328 2N6329, 2N6330, 2N6331 200-mJ 2N6327, 2N6326

    2N6328

    Abstract: JA-25
    Text: 2N6328 #23552 NPN Transistor D ivisio n Lawrence M il- S p e c (none) S h ip p in g (none) Package D atash eet (none) O u a l D ata (none) Absolute M axim um Ratings Symbol Max P o w e r D issipatio n Pow er 200 W 30 A 100 V 100 V 5 V C o lle c to r C u rre n t


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    PDF 2N6328 300ps 2N6328 JA-25

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    PDF

    IC 8030

    Abstract: 2N6575 10J2 25010 2N6258 2N6580 2N6583 30014 lg 505 2N6249
    Text: NEU ENGLAND SEMICONDUCTOR 51E I m b i b u l a D000tl5b 20? « N E S -7- - 3 & = 2-50 A V ceo sus = 3 5 -50 0 V fi = 0 .2 -5 0 MHz Type No. RNP Comple­ ment VCEO (SUS) (V) Case 8 03 Case 8 0 4 Ic (A) hFE @ IC/VCE {min-max @ A/V) (MAX) -0 / INIPIM T O - 3


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    PDF bSb4clc13 2N5933d 2N5934d 2N5935d 2N5936d 2N6677 2N6678 2N6686 2N6687 2N6688 IC 8030 2N6575 10J2 25010 2N6258 2N6580 2N6583 30014 lg 505 2N6249

    NES 2N5672

    Abstract: 2N4904 5330-30 D0D00S4 2N5867 2N3713 2N3714 2N3715 2N3716 2N3789
    Text: NE 111 E N G L A N D SEMICONDUCTOR STE » • LSbHTTa D0D0054 434 « N E S '7 > 3 5 - o / = 3 -5 0 A VcEO SUS = 4 0 -1 0 0 V fx = 2-6 M Hz lc(MAX) PIMP TO-3 Case 8 0 3 Case 8 0 4 Type No. NPN Complé­ ment VCEO <V) 1C (MAX) (A) (SUS> VCE (SAT) tlFE IC/VCE


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    PDF 0-100V D0D00S4 2N3789 2N3713 2N3790 2N3714 2N3791 2N3715 2N3792 2N3716 NES 2N5672 2N4904 5330-30 2N5867

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE le MAX V c e o (SUS) = = TO-3 2-50A 35-500V NPN Power Transistors PNP VCEO (WS) 1C (max) M (A) hFE@ic/Vc* (min-max @ A/V) 40 55 40 55 6 6 6 6 15-45 0 1.5/4 15*4501.5/4 25-75 0 1.5/4 25-75 @1.5/4 40 60 140 60 80 5 15 10


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    PDF 5-500V 2N3773 2N3788 2N3902 2N4070 2N4071 2N4347 2N4348 2N4913 2N1487

    transistor buv18a

    Abstract: motorola transistor cross reference BUV18A BUX98A motorola N6030 BUT13 transistor buv10 MPSU06 transistor MJ12005 MOTOROLA MJ15021 "cross reference"
    Text: STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR COLLECTOR CONNECTED TO TAB Resistive Switching IcCont Amps Max VcEO sus) Volts Min 0.5 300 MPSU10 0.8 40 MPSU02 1 120 2 Device Type *s US Max tf US Max fT MHz Min P q (Case) Watts hFE Min/Max @ lc Amp MPSU60 30 min


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    PDF MPSU10 MPSU02 MPSU03 MPSU04 MPSU01 MPSU01A MPSU45# MPSU60 MPSU52 MPSU51 transistor buv18a motorola transistor cross reference BUV18A BUX98A motorola N6030 BUT13 transistor buv10 MPSU06 transistor MJ12005 MOTOROLA MJ15021 "cross reference"

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


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    PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845

    2NXXXX

    Abstract: SILICON TRANSISTOR CORP 2N6357 transistor 2N6274 2N6192 2N6193 2N6211 2N6212 2nxxx 2N6214
    Text: □ D □ a î ru ru □ Q: îC\ o o o o o CO CO co o o CM CO » E E o o o o o co co co co co o o o o o co lo io' lo r-* o o o o o r-’ n .* r-^ o o co CO co co co co co o o o d o o o o lo lo CO CO co CM CM LO LO LO o LO CM CM 1- O O O O O T- 1- CMCMCM Z Z Q -Z Z


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    PDF 2N6192 2N6193 2N6211 2N6212 2N6213 2N6214 2N6215 2N6216 2N6217 2N6226 2NXXXX SILICON TRANSISTOR CORP 2N6357 transistor 2N6274 2nxxx