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    2N5013 Price and Stock

    Microchip Technology Inc 2N5013

    TRANS NPN 800V 0.2A TO5
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    Microchip Technology Inc JAN2N5013

    Trans GP BJT NPN 800V 200mA 3-Pin TO-5 Bag - Bag (Alt: JAN2N5013)
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    Microchip Technology Inc JANTXV2N5013U4

    Trans GP BJT NPN 800V 200mA 3-Pin SMD - Trays (Alt: JANTXV2N5013U4)
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    Microchip Technology Inc JANTX2N5013

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    Microchip Technology Inc JANTX2N5013U4

    Trans GP BJT NPN 800V 200mA 3-Pin SMD - Trays (Alt: JANTX2N5013U4)
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    2N5013 Datasheets (21)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N5013 Semelab Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package - Pol=NPN / Pkg=TO39 / Vceo=800 / Ic=0.5 / Hfe=30-180 / fT(Hz)=20M / Pwr(W)=2 Original PDF
    2N5013 Diode Transistor NPN Transistor Selection Guide Scan PDF
    2N5013 Diode Transistor Transistor Short Form Data Scan PDF
    2N5013 High Voltage Semi-Conductor Specialists Military and Industrial Medium Power Transistors Scan PDF
    2N5013 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N5013 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N5013 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N5013 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N5013 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N5013 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5013 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N5013 New England Semiconductor BIPOLAR NPN TRANSISTOR TO-39 TO-5 Scan PDF
    2N5013 New England Semiconductor NPN TO-39 / TO-5 Transistor Scan PDF
    2N5013 PPC Products Transistor Short Form Data Scan PDF
    2N5013 PPC Products Transistor Selection Guide Scan PDF
    2N5013 PPC Products Transistor Selection Guide including JAN / JANTX / JANTXV Scan PDF
    2N5013 Semiconductor Technology High Voltage Silicon Low and Medium Power Transistors Scan PDF
    2N5013 Semiconductor Technology High Voltage Silicon Low and Medium Power Transistors Scan PDF
    2N5013 Solid State 800 V, 0.5 A high voltage NPN transistor - Pol=NPN / Pkg=TO39 / Vceo=800 / Ic=0.5 / Hfe=30-180 / fT(Hz)=20M / Pwr(W)=2 Scan PDF
    2N5013 Solid State Devices HIGH VOLTAGE SILICON DIFFUSED NPN TRANSISTOR Scan PDF

    2N5013 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N50

    Abstract: 2N5010 2N5012 npn vce 900v 2N5013 2N5015 5013
    Text: 2N5013 thru 2N5015 SFT5013/5 thru SFT5015/5 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/


    Original     		PDF 2N5013 2N5015 SFT5013/5 SFT5015/5 SFT50 2N5010 2N501ctor TR0043D 2N50 2N5012 npn vce 900v 2N5015 5013

    Untitled

    Abstract: No abstract text available
    Text: 2N5013 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 800V 0.41 (0.016)


    Original     		PDF 2N5013 O205AD) 10/25m 19-Jun-02

    Untitled

    Abstract: No abstract text available
    Text: 2N5013 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 800V 0.41 (0.016)


    Original     		PDF 2N5013 O205AD) 10/25m 17-Jul-02

    2N5014

    Abstract: 2N5013 2N5015 2N5010 2N5012
    Text: 2N5013 thru 2N5015 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 0.5 AMP 800 – 1000 Volts NPN Transistor DESIGNER’S DATA SHEET FEATURES: • •


    Original     		PDF 2N5013 2N5015 2N5010 2N5012 2N5013 2N5014 2N5014 2N5015

    2N5013

    Abstract: 2N5010 2N5011 2N5012 2N5014 2N5015 transistor npn 10mhz 500v
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727 DEVICES 2N5010 2N5011 2N5012 LEVELS 2N5013 2N5014 2N5015


    Original     		PDF MIL-PRF-19500/727 2N5010 2N5011 2N5012 2N5013 2N5014 2N5015 2N5010S 2N5011S 2N5012S 2N5013 2N5010 2N5011 2N5012 2N5014 2N5015 transistor npn 10mhz 500v

    2N5015

    Abstract: 2N5014 2N5010 2N5012 2N5013
    Text: 2N5013 thru 2N5015 Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 0.5 AMP 800 – 1000 Volts NPN Transistor DESIGNER’S DATA SHEET FEATURES: • •


    Original     		PDF 2N5013 2N5015 2N5010 2N5012 2N5013 2N5014 2N5015 2N5014

    2N5013

    Abstract: No abstract text available
    Text: 2N5013 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 800V 0.41 (0.016)


    Original     		PDF 2N5013 O205AD) 10/25m 1-Aug-02 2N5013

    2N5014

    Abstract: 2N5015 2N5010 2N5011 2N5012 2N5013 npn ic 25mA
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727 DEVICES 2N5010 2N5011 2N5012 LEVELS 2N5013 2N5014 2N5015


    Original     		PDF MIL-PRF-19500/727 2N5010 2N5011 2N5012 2N5013 2N5014 2N5015 2N5010S 2N5011S 2N5012S 2N5014 2N5015 2N5010 2N5011 2N5012 2N5013 npn ic 25mA

    2SC1626Y

    Abstract: PT8860 2SC22 2SC1626-Y 2SC2494 2N5764 2N295 2N1720 2SC1626Y NPN 2N1718
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 < 1 A, BUX87 2N5010 2N5011 2SC1004 2N5012 2SC3184 2SC1004A 2N5013 2N5014 2N5015 ~~~~6~S 15 20 S01409 2SC2931 2SC1970 2SC1620 2SC22 GES5551 TH596 2SC3116 ~~g:~~A 25 30 40326 40635 2S01458 2S01483 2N5768 2N5768


    Original     		PDF 220var 37var 2SC2117 2S0359 2S0360 TN1711 2S0414 2S0414 237var 2SC1626Y PT8860 2SC22 2SC1626-Y 2SC2494 2N5764 2N295 2N1720 2SC1626Y NPN 2N1718

    bu808 equivalent

    Abstract: bu808 2N4001 diode equivalent bu808 2N3953 2N4957 2N3908 2N3916 2N3930 BU143
    Text: STI Type: 2N3778 Notes: Polarity: PNP Power Dissipation: 5.0 VCBO: 40 VCER: ICBO: ICBO ua: hFE: 10 hFE A: .2 VCE: VBE: IC A: COB: fT: 1.0 Case Style: TO-205AD/TO-39 Industry Type: 2N3778 STI Type: 2N3792 Notes: *BVCBO Polarity: PNP Power Dissipation: 150 Tj: 200


    Original     		PDF 2N3778 O-205AD/TO-39 2N3792 O-204AA/TO-3 2N3791 2N3798 bu808 equivalent bu808 2N4001 diode equivalent bu808 2N3953 2N4957 2N3908 2N3916 2N3930 BU143

    Untitled

    Abstract: No abstract text available
    Text: SOLID STATE DEVICES INC 12E D Jfl3tbDll GDDBDSl T | T - S3-OS- 2N5013 THRU 2N5015 500 mA HIGH VOLTAGE NPN TRANSISTOR 8 0 0 -1 0 0 0 VOLTS CASE STYLE W JEDEC TO—5 14830 Valley View Avenue La Mirada, California 90638 213 921-9660 TW X 910-583-4807 FAX 213-921-2396


    OCR Scan     		PDF 2N5013 2N5015 2N5010 2N5012

    2N2992

    Abstract: 23028 2N3016 JANTX2N3440
    Text: Microsemi NPN Transistors Part Num ber NPN 2N4311 2N4305 2N4309 2N2222A 2N1506 2N1613A 2N5011 2N5012 2N5013 2N5014 2N5015 2N5010 2N5092 2N5095 2N5097 2N5098 2N5099 2N3500 2N3501 2N3866 JAN2N3866 JANTX2N3866 JANTXV2N3866 2N1700 2N3016 2N2102 2N2102A 2N2102S


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SEM ELA B pic - SELECTO R GUIDE DISCRETE BI-POLAR DEVICES Type_No Description 2N4938DCSM 2N4939 2N4939DSCM 2N4999 2N5000 2N5000-SM 2N5001 2N5001-SM 2N5001S 2N5002 2N5002-SM 2N5010 2N5011 2N5012 2N5013 2N5014 2N5015 2N5015S 2N5023 2N5023S 2N5038 2N5038 C E C C


    OCR Scan     		PDF 2N4938DCSM 2N4939 2N4939DSCM 2N4999 2N5000 2N5000-SM 2N5001 2N5001-SM 2N5001S 2N5002

    Untitled

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 VcEO Ic sus (max) VOLTS AMPS hpE@i<yvCE ^CE(sit) PACKAGE DEVICE TYPE (min/max @ A/V) NPN TO-39 2N4150A 70 5.0 40-120@5/5 .6@5/,5 2N5010 500h .5 [email protected]/10 2N5011 600h .5 2N5012 700h 2N5013 @ Ic/I b


    OCR Scan     		PDF O-39/TO-5 2N4150A 2N5010 2N5011 2N5012 2N5013 2N5152 2N5154 2N5237A 2N5238A

    Untitled

    Abstract: No abstract text available
    Text: o o o 1C fT hFE @ 1C Device Type Min Amps Case PD @ TC MHz Watts °C JEDEC 0.15 300 2N5058 35 0.03 30 1 25 TO-5 0.5 300 2N3742 20 0.03 30 1 25 TO-5 TO-5 30 0.25 25 25 25 30 0.025 35 4 25 TO-5 600* 2N5011 30 0.025 35 4 25 TO-5 700* 2N5012 30 0.025 35 800* 2N5013


    OCR Scan     		PDF 2N5058 2N3742 SFT102 2N5010 2N5011 2N5012 2N5013 2N5014 2N5015 SFT8600

    Untitled

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 NPN TO-39 NPN TO-5 DEVICE TYPE 2N1479 2N1480 2N1481 2N1482 2N1714 2N1717 2N3418 2N3419 2N3420 2N3421 2N3439 2N3440 2N4150 2N5010 2N5011 2N5012 2N5013 2N5152 2N5154 2N5237 2N5238 2N5337 2N5338 2N5339


    OCR Scan     		PDF O-39/TO-5 2N1479 2N1480 2N1481 2N1482 2N1714 2N1717 2N3418 2N3419 2N3420

    2N5013

    Abstract: 2N5010 2N5012 2N5015 2N5014
    Text: ton i \ ^ 2N5013 THRU 2N5015 500 mA HIGH VOLTAGE NPN TRANSISTOR 800-1000VOLTS CASE STYLE W JED EC TO -5 14830 Valley View Avenue La Mirada, California 90638 213 921-9660 TWX 910-583-4807 FAX 213-921-2396 FEATURES • B V C E R AND B V C B O TO • LOW S A T U R A T IO N V O L T A G E


    OCR Scan     		PDF 2N5013 2N5015 800-1000VOLTS 2N5010 2N5012 2N5014 2N5013-2NS0H 2N5015-

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    2N1479

    Abstract: 2N1480 2N1481 2N1482 2N1700 2N5781 2N5782 2N5784 2N5785 2N5786
    Text: "flM NPN TO-39/TO-5 2848352 DIODE TRANSISTOR DE J 2 B M Û 3 S E 0DÜG155 5 C O . I N C 84D 00125 D jr. 3 l-O fT D1QDE TMI\l.515T0ft Cü.if\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area ca ll TO LL FREE 800-526-4581 FA X No. 201-575-5863


    OCR Scan     		PDF O-39/TO-5 D00D1SS 515TQft 2N1479 2N1480 2N1481 2N1482 2N1700 2N5784 2N5785 2N5781 2N5782 2N5786

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE TO-5/TO-39 le MAX = 0.05-10A V ce o (S U S ) NPN Power Transistors PM> VCEÛ («u») M IC (IMI) (A) hFE&c/V» (mn-mu A/V) VCE(SAT) eo b (V A/A) VBE ©IC/VCE (V© A/V) 2N1479 2N1480 2N1481 2N1482 40 55 40 55 1.5 1.5


    OCR Scan     		PDF O-5/TO-39 5-10A 2N1479 2N1480 2N1481 2N1482 2N1700 2N3418 2N3419 2N3420

    2N4839

    Abstract: TO114 package 2N5860 2N1724A 2N3714 2N3715 2N3716 2N3789 2N3790 2N3792
    Text: GENERAL TRANSISTOR CORP 24E D • 3^SaD01 DODOD^ fi ■ General Transistor Corporation CASE TO-3, TO-39 lc MAX =3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 T - 3 3 - o i


    OCR Scan     		PDF 2N3789 2N3713 2N3790 2N3714 2N3791 2N3715 2N3792 050-H O-107 O-126 2N4839 TO114 package 2N5860 2N1724A 2N3716

    Untitled

    Abstract: No abstract text available
    Text: "type No. 6133167 □□□□□SO fl 37E D SEMELAB LTD Option'1*^ Po,arity 2N4925 2N4928 2N4929 2N4930 2N4931 SCREEN HI-REL SCREEN SCREEN SCREEN NPN PNP PNP PNP PNP 2N4937 2N4999 2N5000 2N5001 2N5002 HI-REL HI-REL HI-REL HI-REL HI-REL PNP PNP NPN PNP NPN


    OCR Scan     		PDF 2N4925 2N4928 2N4929 2N4930 2N4931 2N4937 2N4999 2N5000 2N5001 2N5002

    MD14

    Abstract: 2N4069 2N4358 2N4438 2N2726 2N2727 2N2858 2N2859 2N2989 2N2990
    Text: SEM ICO NDUCTO R TECHNOLOGY O SE D I fll3 h 4 5 fl O D D O S l? s £ Jay Sueet SEMICONDUCTOR TECHNOLOGY, INC. HIGH VOLTAGE SILICON LOW AND MEDIUM POWER TRANSISTORS Stuart. Florida 34S37 407 283-4500 • TWX - 5 1 0 -9 5 - W b '• FAX 407-286-891'! MPN & p n p


    OCR Scan     		PDF 34S37 510-953-7b' 2N2726 2N2727 2N2858 2N2859 N2988 2N2989 2N5058 N5059 MD14 2N4069 2N4358 2N4438 2N2990

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


    OCR Scan     		PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680